EP1929545A4 - SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME - Google Patents

SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME

Info

Publication number
EP1929545A4
EP1929545A4 EP06791170.1A EP06791170A EP1929545A4 EP 1929545 A4 EP1929545 A4 EP 1929545A4 EP 06791170 A EP06791170 A EP 06791170A EP 1929545 A4 EP1929545 A4 EP 1929545A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
same
electroluminescent device
semiconductor electroluminescent
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06791170.1A
Other languages
German (de)
French (fr)
Other versions
EP1929545A1 (en
Inventor
Fengyi Jiang
Li Wang
Wenqing Fang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lattice Power Jiangxi Corp
Original Assignee
Lattice Power Jiangxi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Publication of EP1929545A1 publication Critical patent/EP1929545A1/en
Publication of EP1929545A4 publication Critical patent/EP1929545A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
EP06791170.1A 2005-09-30 2006-09-29 SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME Withdrawn EP1929545A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2005100303217A CN100388515C (en) 2005-09-30 2005-09-30 Semiconductor light emitting device and manufacturing method thereof
PCT/CN2006/002584 WO2007036164A1 (en) 2005-09-30 2006-09-29 Semiconductor light-emitting device and method for making same

Publications (2)

Publication Number Publication Date
EP1929545A1 EP1929545A1 (en) 2008-06-11
EP1929545A4 true EP1929545A4 (en) 2014-03-05

Family

ID=36751610

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06791170.1A Withdrawn EP1929545A4 (en) 2005-09-30 2006-09-29 SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME

Country Status (5)

Country Link
EP (1) EP1929545A4 (en)
JP (1) JP2009510730A (en)
KR (1) KR20080049724A (en)
CN (1) CN100388515C (en)
WO (1) WO2007036164A1 (en)

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JP2007207869A (en) * 2006-01-31 2007-08-16 Rohm Co Ltd Nitride semiconductor light-emitting device
DE102007046519A1 (en) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Thin-film LED with a mirror layer and method for its production
WO2009117845A1 (en) * 2008-03-25 2009-10-01 Lattice Power (Jiangxi) Corporation Semiconductor light-emitting device with double-sided passivation
US8373152B2 (en) * 2008-03-27 2013-02-12 Lg Innotek Co., Ltd. Light-emitting element and a production method therefor
WO2009128669A2 (en) * 2008-04-16 2009-10-22 엘지이노텍주식회사 Light-emitting device and fabricating method thereof
JP4583487B2 (en) 2009-02-10 2010-11-17 Ｄｏｗａエレクトロニクス株式会社 Semiconductor light emitting device and manufacturing method thereof
JP4871967B2 (en) * 2009-02-10 2012-02-08 Ｄｏｗａエレクトロニクス株式会社 Semiconductor light emitting device and manufacturing method thereof
KR100999726B1 (en) * 2009-05-04 2010-12-08 엘지이노텍 주식회사 Light emitting device and manufacturing method
KR101154750B1 (en) * 2009-09-10 2012-06-08 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
KR100986407B1 (en) * 2009-10-22 2010-10-08 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
KR101007077B1 (en) * 2009-11-06 2011-01-10 엘지이노텍 주식회사 Light emitting device, light emitting device package and manufacturing method thereof
JP5733594B2 (en) * 2010-02-18 2015-06-10 スタンレー電気株式会社 Semiconductor light emitting device
KR101014071B1 (en) * 2010-04-15 2011-02-10 엘지이노텍 주식회사 Light emitting device, light emitting device manufacturing method, light emitting device package and lighting system
KR101039609B1 (en) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 Light emitting device, manufacturing method and light emitting device package
US8502244B2 (en) 2010-08-31 2013-08-06 Micron Technology, Inc. Solid state lighting devices with current routing and associated methods of manufacturing
CN101997070A (en) * 2010-09-10 2011-03-30 北京工业大学 High-reflection low-voltage inverted light-emitting diode and preparation method thereof
JP2012253304A (en) * 2011-06-07 2012-12-20 Toshiba Corp Method of manufacturing nitride semiconductor light-emitting element
JP2013026451A (en) 2011-07-21 2013-02-04 Stanley Electric Co Ltd Semiconductor light-emitting device
EP2745333B8 (en) * 2011-11-07 2018-09-05 Lumileds Holding B.V. Improved p-contact with more uniform injection and lower optical loss
KR101220419B1 (en) * 2012-04-27 2013-01-21 한국광기술원 Vertical light emitting diode
JP6185786B2 (en) * 2012-11-29 2017-08-23 スタンレー電気株式会社 Light emitting element
JP6190591B2 (en) * 2013-01-15 2017-08-30 スタンレー電気株式会社 Semiconductor light emitting device
CN103456864B (en) * 2013-08-29 2016-01-27 刘晶 A kind of manufacture method of light-emitting diode chip for backlight unit, chip and light-emitting diode
CN110993756B (en) * 2019-12-18 2022-12-06 东莞市中晶半导体科技有限公司 LED chip and manufacturing method thereof
CN119836718A (en) * 2022-08-25 2025-04-15 国立大学法人京都大学 Two-dimensional photonic crystal lasers
CN115986007A (en) * 2022-11-03 2023-04-18 天津三安光电有限公司 A light-emitting diode and a light-emitting device

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JPH10200163A (en) * 1997-01-10 1998-07-31 Sanken Electric Co Ltd Semiconductor light emitting device
JP2001244503A (en) * 1999-12-21 2001-09-07 Nichia Chem Ind Ltd Nitride semiconductor light emitting device
JP2004172217A (en) * 2002-11-18 2004-06-17 Matsushita Electric Works Ltd Semiconductor light emitting device
JP2005123526A (en) * 2003-10-20 2005-05-12 Oki Data Corp Semiconductor device, LED head, and image forming apparatus
US20050184300A1 (en) * 2004-02-25 2005-08-25 Mikio Tazima Light-emitting semiconductor device and method of fabrication

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JP2792781B2 (en) * 1992-03-03 1998-09-03 シャープ株式会社 Light emitting diode and method of manufacturing the same
JPH0697498A (en) * 1992-09-17 1994-04-08 Toshiba Corp Semiconductor light emitting element
JPH07254731A (en) * 1994-03-15 1995-10-03 Hitachi Cable Ltd Light emitting element
JPH07273368A (en) * 1994-03-29 1995-10-20 Nec Kansai Ltd Light-emitting diode
JP3511213B2 (en) * 1994-03-30 2004-03-29 スタンレー電気株式会社 Optical semiconductor device
JPH08335717A (en) * 1995-06-06 1996-12-17 Rohm Co Ltd Semiconductor light emitting element
JP3595097B2 (en) * 1996-02-26 2004-12-02 株式会社東芝 Semiconductor device
JP3239061B2 (en) * 1996-02-29 2001-12-17 シャープ株式会社 Light emitting diode and method of manufacturing the same
US6492661B1 (en) * 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure
CN100334745C (en) * 1999-11-05 2007-08-29 洲磊科技股份有限公司 Light emitting semiconductor device and manufacturing method thereof
JP4159865B2 (en) * 2002-12-11 2008-10-01 シャープ株式会社 Nitride compound semiconductor light emitting device manufacturing method
KR100452751B1 (en) * 2003-06-03 2004-10-15 삼성전기주식회사 III-Nitride compound semiconductor light emitting device with mesh type electrode
JP2005116794A (en) * 2003-10-08 2005-04-28 Mitsubishi Cable Ind Ltd Nitride semiconductor light emitting element
KR20050051920A (en) * 2003-11-28 2005-06-02 삼성전자주식회사 Flip-chip type light emitting device and method of manufacturing the same
CN1641893A (en) * 2004-01-02 2005-07-20 炬鑫科技股份有限公司 A gallium nitride-based light-emitting diode structure and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10200163A (en) * 1997-01-10 1998-07-31 Sanken Electric Co Ltd Semiconductor light emitting device
JP2001244503A (en) * 1999-12-21 2001-09-07 Nichia Chem Ind Ltd Nitride semiconductor light emitting device
JP2004172217A (en) * 2002-11-18 2004-06-17 Matsushita Electric Works Ltd Semiconductor light emitting device
JP2005123526A (en) * 2003-10-20 2005-05-12 Oki Data Corp Semiconductor device, LED head, and image forming apparatus
US20050184300A1 (en) * 2004-02-25 2005-08-25 Mikio Tazima Light-emitting semiconductor device and method of fabrication

Non-Patent Citations (1)

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Title
See also references of WO2007036164A1 *

Also Published As

Publication number Publication date
JP2009510730A (en) 2009-03-12
KR20080049724A (en) 2008-06-04
WO2007036164A8 (en) 2007-07-19
CN1770486A (en) 2006-05-10
EP1929545A1 (en) 2008-06-11
WO2007036164A1 (en) 2007-04-05
CN100388515C (en) 2008-05-14

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