EP1929545A4 - Dispositif electroluminescent a semi-conducteur et son procede de fabrication - Google Patents

Dispositif electroluminescent a semi-conducteur et son procede de fabrication

Info

Publication number
EP1929545A4
EP1929545A4 EP06791170.1A EP06791170A EP1929545A4 EP 1929545 A4 EP1929545 A4 EP 1929545A4 EP 06791170 A EP06791170 A EP 06791170A EP 1929545 A4 EP1929545 A4 EP 1929545A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
same
electroluminescent device
semiconductor electroluminescent
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06791170.1A
Other languages
German (de)
English (en)
Other versions
EP1929545A1 (fr
Inventor
Fengyi Jiang
Li Wang
Wenqing Fang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lattice Power Jiangxi Corp
Original Assignee
Lattice Power Jiangxi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Publication of EP1929545A1 publication Critical patent/EP1929545A1/fr
Publication of EP1929545A4 publication Critical patent/EP1929545A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
EP06791170.1A 2005-09-30 2006-09-29 Dispositif electroluminescent a semi-conducteur et son procede de fabrication Withdrawn EP1929545A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2005100303217A CN100388515C (zh) 2005-09-30 2005-09-30 半导体发光器件及其制造方法
PCT/CN2006/002584 WO2007036164A1 (fr) 2005-09-30 2006-09-29 Dispositif electroluminescent a semi-conducteur et son procede de fabrication

Publications (2)

Publication Number Publication Date
EP1929545A1 EP1929545A1 (fr) 2008-06-11
EP1929545A4 true EP1929545A4 (fr) 2014-03-05

Family

ID=36751610

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06791170.1A Withdrawn EP1929545A4 (fr) 2005-09-30 2006-09-29 Dispositif electroluminescent a semi-conducteur et son procede de fabrication

Country Status (5)

Country Link
EP (1) EP1929545A4 (fr)
JP (1) JP2009510730A (fr)
KR (1) KR20080049724A (fr)
CN (1) CN100388515C (fr)
WO (1) WO2007036164A1 (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
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JP2007207869A (ja) * 2006-01-31 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子
DE102007046519A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
WO2009117845A1 (fr) * 2008-03-25 2009-10-01 Lattice Power (Jiangxi) Corporation Dispositif électroluminescent à semi-conducteur à passivation double face
US8373152B2 (en) * 2008-03-27 2013-02-12 Lg Innotek Co., Ltd. Light-emitting element and a production method therefor
WO2009128669A2 (fr) * 2008-04-16 2009-10-22 엘지이노텍주식회사 Dispositif électroluminescent et son procédé de fabrication
JP4583487B2 (ja) 2009-02-10 2010-11-17 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
JP4871967B2 (ja) * 2009-02-10 2012-02-08 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
KR100999726B1 (ko) * 2009-05-04 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101154750B1 (ko) * 2009-09-10 2012-06-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100986407B1 (ko) * 2009-10-22 2010-10-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101007077B1 (ko) * 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
JP5733594B2 (ja) * 2010-02-18 2015-06-10 スタンレー電気株式会社 半導体発光装置
KR101014071B1 (ko) * 2010-04-15 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101039609B1 (ko) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
US8502244B2 (en) 2010-08-31 2013-08-06 Micron Technology, Inc. Solid state lighting devices with current routing and associated methods of manufacturing
CN101997070A (zh) * 2010-09-10 2011-03-30 北京工业大学 一种高反射低电压的倒装发光二极管及其制备方法
JP2012253304A (ja) * 2011-06-07 2012-12-20 Toshiba Corp 窒化物半導体発光素子の製造方法
JP2013026451A (ja) 2011-07-21 2013-02-04 Stanley Electric Co Ltd 半導体発光素子
EP2745333B8 (fr) * 2011-11-07 2018-09-05 Lumileds Holding B.V. Contact de type p amélioré avec injection plus uniforme et pertes optiques réduites
KR101220419B1 (ko) * 2012-04-27 2013-01-21 한국광기술원 수직 구조 발광 다이오드
JP6185786B2 (ja) * 2012-11-29 2017-08-23 スタンレー電気株式会社 発光素子
JP6190591B2 (ja) * 2013-01-15 2017-08-30 スタンレー電気株式会社 半導体発光素子
CN103456864B (zh) * 2013-08-29 2016-01-27 刘晶 一种发光二极管芯片的制作方法、芯片及发光二极管
CN110993756B (zh) * 2019-12-18 2022-12-06 东莞市中晶半导体科技有限公司 Led芯片及其制作方法
CN119836718A (zh) * 2022-08-25 2025-04-15 国立大学法人京都大学 二维光子晶体激光器
CN115986007A (zh) * 2022-11-03 2023-04-18 天津三安光电有限公司 一种发光二极管及发光装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10200163A (ja) * 1997-01-10 1998-07-31 Sanken Electric Co Ltd 半導体発光素子
JP2001244503A (ja) * 1999-12-21 2001-09-07 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2004172217A (ja) * 2002-11-18 2004-06-17 Matsushita Electric Works Ltd 半導体発光素子
JP2005123526A (ja) * 2003-10-20 2005-05-12 Oki Data Corp 半導体装置、ｌｅｄヘッド、及び画像形成装置
US20050184300A1 (en) * 2004-02-25 2005-08-25 Mikio Tazima Light-emitting semiconductor device and method of fabrication

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JPS57149781A (en) * 1981-03-11 1982-09-16 Fujitsu Ltd Semiconductor luminous device
JPS58140171A (ja) * 1982-02-15 1983-08-19 Nec Corp 発光ダイオ−ド
JP2792781B2 (ja) * 1992-03-03 1998-09-03 シャープ株式会社 発光ダイオード及びその製造方法
JPH0697498A (ja) * 1992-09-17 1994-04-08 Toshiba Corp 半導体発光素子
JPH07254731A (ja) * 1994-03-15 1995-10-03 Hitachi Cable Ltd 発光素子
JPH07273368A (ja) * 1994-03-29 1995-10-20 Nec Kansai Ltd 発光ダイオード
JP3511213B2 (ja) * 1994-03-30 2004-03-29 スタンレー電気株式会社 光半導体デバイス
JPH08335717A (ja) * 1995-06-06 1996-12-17 Rohm Co Ltd 半導体発光素子
JP3595097B2 (ja) * 1996-02-26 2004-12-02 株式会社東芝 半導体装置
JP3239061B2 (ja) * 1996-02-29 2001-12-17 シャープ株式会社 発光ダイオード及びその製造方法
US6492661B1 (en) * 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure
CN100334745C (zh) * 1999-11-05 2007-08-29 洲磊科技股份有限公司 发光半导体装置及其制作方法
JP4159865B2 (ja) * 2002-12-11 2008-10-01 シャープ株式会社 窒化物系化合物半導体発光素子の製造方法
KR100452751B1 (ko) * 2003-06-03 2004-10-15 삼성전기주식회사 그물망 전극이 적용된 ⅲ-질화물 반도체 발광소자
JP2005116794A (ja) * 2003-10-08 2005-04-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
KR20050051920A (ko) * 2003-11-28 2005-06-02 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
CN1641893A (zh) * 2004-01-02 2005-07-20 炬鑫科技股份有限公司 一种氮化镓系发光二极管结构及其制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10200163A (ja) * 1997-01-10 1998-07-31 Sanken Electric Co Ltd 半導体発光素子
JP2001244503A (ja) * 1999-12-21 2001-09-07 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2004172217A (ja) * 2002-11-18 2004-06-17 Matsushita Electric Works Ltd 半導体発光素子
JP2005123526A (ja) * 2003-10-20 2005-05-12 Oki Data Corp 半導体装置、ｌｅｄヘッド、及び画像形成装置
US20050184300A1 (en) * 2004-02-25 2005-08-25 Mikio Tazima Light-emitting semiconductor device and method of fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2007036164A1 *

Also Published As

Publication number Publication date
JP2009510730A (ja) 2009-03-12
KR20080049724A (ko) 2008-06-04
WO2007036164A8 (fr) 2007-07-19
CN1770486A (zh) 2006-05-10
EP1929545A1 (fr) 2008-06-11
WO2007036164A1 (fr) 2007-04-05
CN100388515C (zh) 2008-05-14

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