EP1966886A2 - Resonateur mems, procede de realisation, et oscillateur mems - Google Patents

Resonateur mems, procede de realisation, et oscillateur mems

Info

Publication number
EP1966886A2
EP1966886A2 EP06842591A EP06842591A EP1966886A2 EP 1966886 A2 EP1966886 A2 EP 1966886A2 EP 06842591 A EP06842591 A EP 06842591A EP 06842591 A EP06842591 A EP 06842591A EP 1966886 A2 EP1966886 A2 EP 1966886A2
Authority
EP
European Patent Office
Prior art keywords
layer
gap
silicon
mems
movable element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06842591A
Other languages
German (de)
English (en)
Inventor
Jozef T. M. Van Beek
Bart Van Velzen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Priority to EP06842591A priority Critical patent/EP1966886A2/fr
Publication of EP1966886A2 publication Critical patent/EP1966886A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02496—Horizontal, i.e. parallel to the substrate plane

Definitions

  • the invention further relies upon the insight that the dielectric material provided on the sidewall has a dielectric constant larger than 1 and that this fact can be exploited. It has been the inventor's insight that due to the dielectric constant being larger than 1, the effective gap width is smaller than the distance between the electrodes.
  • the term "effective gap width" is further explained in the description of the drawings of this specification.
  • WO 2004/027796A2 discloses a method of forming gaps having widths smaller than obtainable with lithographic techniques.
  • an additional sacrificial oxide layer is deposited in gaps next to a resonator, whereafter it is immediately partially removed so that a thin nanometer-range oxide layer remains on the resonator.
  • the remaining gap is then filled with polysilicon for forming electrodes.
  • Releasing of the resonator structure is done as a last step of the method where both the thin sacrificial oxide layer and the oxide layer are selectively etched away.
  • this document discloses quite a complicated method of forming gaps having widths smaller than obtainable with lithographic techniques.
  • An alternative embodiment is characterized in that the step of providing a dielectric layer comprises deposition of the dielectric layer, the dielectric layer being provided on at least one sidewall of the gap associated with the top layer.
  • Deposition techniques also offer a high controllability of the deposited dielectric layer.
  • Fig 2 illustrates the principle of reducing the gap width in the case of forming a dielectric on the sidewalls of the gap by means of oxidation
  • Fig 3 illustrates the principle of reducing the gap width in the case of forming a dielectric on the sidewalls of the gap by means of deposition.
  • the top layer 40 is patterned through the openings 55 in the mask layer 50.
  • openings 45 are formed in the top layer 40, which correspond with the openings 55 in the mask layer. This can be done by using, for example, a dry etching step (e.g. DRIE etching). Etching techniques are known by the person skilled in the art.
  • the openings 45 are formed such that they expose sacrificial layer 30 underneath the top layer 40. Also gaps 46,47 are formed, which define a movable element 48 of the MEMS resonator to be manufactured.
  • the dielectric e.g. silicon oxide, but also silicon nitride
  • the dielectric can be deposited on the sidewalls of the gaps 46,47.
  • Several techniques exist for deposition like atomic layer deposition (ALD) and low-pressure chemical vapor deposition (LPCVD).
  • ALD atomic layer deposition
  • LPCVD low-pressure chemical vapor deposition
  • tilted/shadow deposition techniques may be used. More information on shadow deposition techniques can be found in S. WoIf, "Silicon Processing" , VoLl, pp.374.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

La présente invention concerne un résonateur MEMS comprenant une première électrode, un élément mobile (48) comprenant une seconde électrode, l'élément mobile (48) pouvant se déplacer au moins vers la première électrode, la première électrode et l'élément mobile (48) étant séparés par un espacement (46, 47) présentant des parois latérales. Selon l'invention, le résonateur MEMS se caractérise en ce que l'espacement (46, 47) présente une couche diélectrique (60) sur au moins l'une des parois latérales.
EP06842591A 2005-12-23 2006-12-18 Resonateur mems, procede de realisation, et oscillateur mems Withdrawn EP1966886A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06842591A EP1966886A2 (fr) 2005-12-23 2006-12-18 Resonateur mems, procede de realisation, et oscillateur mems

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05112943 2005-12-23
PCT/IB2006/054930 WO2007072408A2 (fr) 2005-12-23 2006-12-18 Resonateur mems, procede de realisation, et oscillateur mems
EP06842591A EP1966886A2 (fr) 2005-12-23 2006-12-18 Resonateur mems, procede de realisation, et oscillateur mems

Publications (1)

Publication Number Publication Date
EP1966886A2 true EP1966886A2 (fr) 2008-09-10

Family

ID=38050188

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06842591A Withdrawn EP1966886A2 (fr) 2005-12-23 2006-12-18 Resonateur mems, procede de realisation, et oscillateur mems

Country Status (4)

Country Link
EP (1) EP1966886A2 (fr)
JP (1) JP2009521175A (fr)
CN (1) CN101395795B (fr)
WO (1) WO2007072408A2 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009097167A2 (fr) * 2008-01-05 2009-08-06 The Regents Of The University Of California Espace partiellement rempli entre l’électrode et le résonateur
JP2009190150A (ja) * 2008-02-18 2009-08-27 Sanyo Electric Co Ltd マイクロエレクトロメカニカルデバイス及びその製造方法。
US7990229B2 (en) 2008-04-01 2011-08-02 Sand9, Inc. Methods and devices for compensating a signal using resonators
US8044736B2 (en) 2008-04-29 2011-10-25 Sand9, Inc. Timing oscillators and related methods
US8044737B2 (en) 2008-04-29 2011-10-25 Sand9, Inc. Timing oscillators and related methods
US8410868B2 (en) 2009-06-04 2013-04-02 Sand 9, Inc. Methods and apparatus for temperature control of devices and mechanical resonating structures
US8476809B2 (en) 2008-04-29 2013-07-02 Sand 9, Inc. Microelectromechanical systems (MEMS) resonators and related apparatus and methods
US8111108B2 (en) 2008-07-29 2012-02-07 Sand9, Inc. Micromechanical resonating devices and related methods
US8689426B2 (en) 2008-12-17 2014-04-08 Sand 9, Inc. Method of manufacturing a resonating structure
WO2010077311A1 (fr) 2008-12-17 2010-07-08 Sand9, Inc. Dispositifs résonants mécaniques multi-ports et procédés connexes
JP5848131B2 (ja) 2008-12-17 2016-01-27 アナログ デバイシス， インコーポレイテッド 機械共振構造体を備える機器
US9048811B2 (en) 2009-03-31 2015-06-02 Sand 9, Inc. Integration of piezoelectric materials with substrates
US8736388B2 (en) 2009-12-23 2014-05-27 Sand 9, Inc. Oscillators having arbitrary frequencies and related systems and methods
US8661899B2 (en) 2010-03-01 2014-03-04 Sand9, Inc. Microelectromechanical gyroscopes and related apparatus and methods
US8833161B2 (en) 2010-04-20 2014-09-16 Sand 9, Inc. Microelectromechanical gyroscopes and related apparatus and methods
WO2012040043A1 (fr) 2010-09-20 2012-03-29 Sand9, Inc. Capteur résonnant utilisant les modes extensionnels d'une plaque
EP2512031B1 (fr) * 2011-04-15 2015-10-07 Nxp B.V. Résonateur MEMS et son procédé de commande
CN102874736A (zh) * 2011-07-14 2013-01-16 中国科学院微电子研究所 横向梳齿型微机械震动能量收集器
US9383208B2 (en) 2011-10-13 2016-07-05 Analog Devices, Inc. Electromechanical magnetometer and applications thereof
US10800649B2 (en) 2016-11-28 2020-10-13 Analog Devices International Unlimited Company Planar processing of suspended microelectromechanical systems (MEMS) devices
CN108471297A (zh) * 2018-03-21 2018-08-31 东南大学 具有通孔结构的低热弹性阻尼两端固定微梁谐振器
US10843920B2 (en) 2019-03-08 2020-11-24 Analog Devices International Unlimited Company Suspended microelectromechanical system (MEMS) devices
CN113572443B (zh) * 2021-07-26 2024-02-09 吴江 一种基于电镀工艺的mems谐振器制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198390A (en) * 1992-01-16 1993-03-30 Cornell Research Foundation, Inc. RIE process for fabricating submicron, silicon electromechanical structures
US5349855A (en) * 1992-04-07 1994-09-27 The Charles Stark Draper Laboratory, Inc. Comb drive micromechanical tuning fork gyro
WO2003059805A2 (fr) * 2002-01-16 2003-07-24 Matsushita Electric Industrial Co., Ltd. Microdispositif
JP4168757B2 (ja) * 2002-02-01 2008-10-22 松下電器産業株式会社 フィルタ
WO2004027796A2 (fr) * 2002-08-07 2004-04-01 Georgia Tech Research Corporation Resonateurs capacitifs et leurs procedes de production
US7522019B2 (en) * 2004-06-04 2009-04-21 The Regents Of The University Of California Internal electrostatic transduction structures for bulk-mode micromechanical resonators

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2007072408A2 *

Also Published As

Publication number Publication date
WO2007072408A3 (fr) 2007-09-27
CN101395795A (zh) 2009-03-25
JP2009521175A (ja) 2009-05-28
WO2007072408A2 (fr) 2007-06-28
CN101395795B (zh) 2011-06-29

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