Classifications

• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3655—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating containing at least one conducting layer
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/38—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal at least one coating being a coating of an organic material
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/805—Electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/805—Electrodes
  • H10K50/81—Anodes
  • H10K50/816—Multilayers, e.g. transparent multilayers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/85—Arrangements for extracting light from the devices
  • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
  • H10W70/69—Insulating materials thereof
  • H10W70/695—Organic materials
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/70—Properties of coatings
  • C03C2217/77—Coatings having a rough surface
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/02—Diffusing elements; Afocal elements
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
  • H10K2102/10—Transparent electrodes, e.g. using graphene
  • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
  • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
  • H10K2102/10—Transparent electrodes, e.g. using graphene
  • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
  • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

Definitions

• organic electroluminescent devices comprise:
• first electrode and a second electrode on the same face of the substrate, the first electrode at least being transparent
• EP 1406474 proposes to provide the electroluminescent device with a diffusing layer in the form of a polymeric matrix comprising diffusing particles. layer being disposed under or on the transparent electrode.
• the invention aims an organic electroluminescent device maximizing the alternative emitted light, especially simpler design and / or less expensive, and / or a simpler manufacture and / or faster than known devices.
• the invention firstly relates to an organic electroluminescent device comprising: a particularly transparent substrate,
• a diffusing (semi) transparent electrode makes it possible to improve the extraction efficiency of the organic electroluminescent device while retaining satisfactory electroconductive properties.
• the organic electroluminescent device according to the invention is simple to implement because it is not necessary to use a polymeric diffusing layer.
• the term "layer” in the absence of any precision, means either a monolayer or a multilayer or a continuous layer, or a discontinuous layer, having in particular conventional patterns including periodic and / or geometric, size millimetric or centimeter (patterns obtained either by etching a continuous layer, or by depositing the discontinuous layer directly to the desired pattern, for example by a mask system).
• the diffusing electroconductive layer may be divided into several scattering zones, for example of the same level of diffusion.
• the first electrode may be the upper electrode, that is to say the electrode farthest from the substrate or the lower electrode, that is to say the electrode closest to the substrate.
• the first electrode may comprise one or more other electroconductive layers, diffusing or not, below or above the diffusing electroconductive layer.
• the second electrode may also include an identical or similar diffusing electroconductive layer to improve the extraction efficiency.
• the electroconductive layer may have a TL light transmission greater than or equal to 50%, especially 70%, or even 80%.
• the electroconductive layer may be semi-transparent, that is to say have a TL between 5 and 50%.
• the blur is preferably between 5 and 20%, to further increase the extraction without significantly reducing the transparency if the latter is necessary for the intended application,
• the first electrode has a fuzzy product factor (H) by the light transmission (TL) expressed in a graph H (TL) which is above a line defined by the following two points.
• H fuzzy product factor
• the first electrode has a light absorption product by the electrical surface resistance of less than 0.6 ⁇ / square
• the first electrode has a resistance per square (R square) less than or equal to 15 ⁇ / square, in particular less than or equal to 12 ⁇ / square, preferably less than or equal to 10 or 12 ⁇ / square.
• the diffusing electroconductive layer may be on the side of the output of the light emitted by the device, outgoing light either by this single side (the second electrode then being reflective or associated with a reflecting element), or on both sides, the second electrode being then transparent or semi-transparent and preferably diffusing.
• the substrate may be transparent, the first electrode is the closest to the substrate and preferably the second electrode is diffusing, in particular by a roughness induced by the diffusing electroconductive layer of the first electrode.
• the diffusion of the electroconductive layer can be obtained preferably with a diffusing surface, that is to say by a surface of appropriate structure.
• this structure is defined by an appropriate random or quasi-random roughness.
• the roughness defined above can be achieved in a commercially feasible way by several alternative or cumulative means.
• the diffusing electroconductive layer may advantageously be a layer having a diffusing surface directly after deposition.
• the diffusing electroconductive layer can be deposited by various techniques. It can be deposited, for example by a pyrolysis technique, especially in the gas phase (a technique often referred to by the abbreviation of C.V.D, for "Chemical Vapor Deposition").
• the diffusing electroconductive layer may advantageously be chosen from metal oxides, especially the following materials: doped tin oxide, in particular fluorine SnO 2: F or antimony SnO 2: Sb
• the precursors which can be used in the case of CVD deposition may be organo-metallic or tin halides associated with a hydrofluoric acid or trifluoroacetic acid fluorine precursor), doped zinc oxide, in particular aluminum ZnO: Al (the precursors which can be used, in the case of CVD deposition, may be organometallic or zinc and aluminum halides) or with gallium ZnO: Ga, or else doped indium oxide, in particular with tin 11TO (the precursors which can be used in the case of CVD deposition can be organometallic or halides of tin and indium), or zinc-doped indium oxide
• the diffusing electroconductive layer by a vacuum deposition technique, in particular by evaporation or magnetic field assisted sputtering.
• Spraying can be reactive (starting from metal targets or under-oxidized, in an oxidizing atmosphere) or non-reactive (starting from ceramic targets, in an inert atmosphere).
• changes in the deposition parameters may make it possible to obtain a certain porosity and / or roughness.
• a relatively high pressure generally makes it possible to obtain relatively porous and rough surface layers.
• One possibility is to modulate this parameter during deposition, so that the electroconductive layer is optionally relatively dense to a certain thickness, then more porous / rough surface.
• An elevated temperature, generally greater than 500 ° C., of deposition of a layer often makes it possible to obtain at least partly crystallized layers, capable of generating and / or increasing the roughness of the surface, and capable of rendering the diffusing surface or increase the diffusion of light.
• the diffusing electroconductive layer may be rough. Preferably, this roughness is random, in that it does not have patterns of a precise geometry. In addition, it is dispersed, depending on the size of the measured surface.
• the roughness of this diffusing electroconductive layer may also be chosen so that the average size of the patterns of this roughness is at least 50 nm, measured in the dimension parallel to the surface of the substrate.
• it is chosen at least 100 nm, and preferably at most 500 nm.
• An average pattern size of between 200 and 400 nm is preferred. This average size can be evaluated, in particular, by scanning electron microscopy.
• the roughness of the layer is in the form of peaks (of irregular shape), which is the case of the crystallized layers having a columnar growth, this average size corresponds to the size (the larger dimension) of the base of these peaks.
• the diffusing electroconductive layer may also have one and / or the other of the characteristics described below.
• the diffusing electroconductive layer may be a roughness layer at least partially induced by texturing after deposition to form a diffusing or more diffusing surface.
• This texturing may be carried out chemically, in particular by acid etching, by plasma etching, in particular by means of an appropriate mask, for example a random mask, or by mechanical means, in particular sandblasting type abrasion.
• TCO Transparent Conductive Oxide
• TCC transparent conductive coating in English
• the diffusing electroconductive layer may be composed of a doped metal oxide and predominantly, preferably substantially crystalline.
• the crystalline character confers a natural roughness after deposition.
• SnO 2 F deposited by
• the very structure of the diffusing surface of the electrode layer is optionally generated or amplified by an undercoat or under layers, electroconductive or otherwise, and / or by the substrate.
• the electroconductive layer is preferably inorganic
• the inorganic sublayer (s) is preferably chosen, preferably obtained by the same deposition technique (for example PVD, by CVD, in particular by evaporation or by magnetron sputtering or pyrolysis).
• the diffusing electroconductive layer may also be roughness induced at least in part by the substrate which is textured with reliefs larger than 10 nm. The layer is deposited directly or not on this textured substrate.
• the texturing of the substrate glass is described in document FR283706. In particular, reference is made to textured glass coated with a SnO 2: F layer described in Example 3 of this document.
• the diffusing electroconductive layer may also be deposited, directly or indirectly, on a rough inorganic layer directly after deposition, with reliefs larger than 10 nm, this layer being preferably a tin-based undercoat and oxygen and possibly other element (s) such as silicon, carbon or nitrogen.
• the diffusing electroconductive layer is a multilayer which comprises a first electroconductive layer composed of an undoped mineral oxide, said first layer being coated by a second electroconductive layer composed of the same inorganic oxide, said mineral oxide being however doped.
• the thickness of the first undoped mineral oxide layer may be between 150 and 900 nm.
• the doped and / or undoped mineral oxide is (are) deposited at high temperature, especially at a temperature above 600 ° C., especially by pyrolysis, for example by CVD, to form oxides (partially) crystalline.
• the first layer may be based on tin oxide (SnO 2) and the second layer is based on fluorine-doped tin oxide (SnO 2: F), deposited in particular by CVD.
• SnO 2 tin oxide
• F fluorine-doped tin oxide
• the first electrode may furthermore comprise at least one conductive metal oxide-based overcoat, in particular tin-zinc-doped or undoped zinc-doped indium oxide, which oxide layer is deposited on the second layer.
• conductive metal oxide-based overcoat in particular tin-zinc-doped or undoped zinc-doped indium oxide, which oxide layer is deposited on the second layer.
• fluorinated tin oxide SnO 2 : F
• the first layer may also be based on zinc oxide (ZnO) and the second layer is based on zinc oxide doped with aluminum (ZnO: Al).
• ZnO: Al is deposited by magnetron sputtering and texture, for example etched with acid, or it is the layer of ZnO which is textured.
• the device may preferably be provided with at least one barrier layer, in particular with respect to the alkalis, inserted between said selected glass substrate and the electrode closest to the substrate.
• This layer having alkaline barrier properties may be based on a dielectric material selected from at least one of the following compounds: silicon nitride or oxynitride, aluminum nitride or oxynitride, silicon oxide or oxycarbide, with a thickness of between 20 and 150 nm.
• the barrier layer may comprise an alternation of high refractive index layers, between 1.9 and 2.3, and low refractive index layers, between 1.4 and 1.7, in particular according to the Si 3 sequences. N 4 / SiO 2 or Si 3 N 4 ZSiO 2 ZSi 3 N 4 .
• It can be deposited by the same type of technique as the electroconductive layers, for example by pyrolysis (CVD) or by sputtering, in a known manner.
• CVD pyrolysis
• sputtering in a known manner.
• this barrier layer may be above or below a naturally rough inorganic layer after deposition, for example from a sub-layer based on silicon, tin and oxygen.
• the second electrode layer may be opaque, reflective, metal in particular comprising a layer of Al, Ag, Cu, Pt, Cr, obtained by spraying or evaporation.
• OLEDs are generally dissociated into two major families depending on the organic material used. If the organic electroluminescent layers are polymers, it is called PLED (Polymer Light Emitting Diodes in English). If the electroluminescent layers are small molecules, it is called SM-OLED (Small Mollecule Organic Light Emitting Diodes).
• PLED Polymer Light Emitting Diodes in English. If the electroluminescent layers are small molecules, it is called SM-OLED (Small Mollecule Organic Light Emitting Diodes).
• SM-OLED Small Mollecule Organic Light Emitting Diodes
• PEDOT poly(styren sulphonate)
• Ph-PPV a layer of phenyl poly (p-phenylenevinylenene) Ph-PPV of 50 nm.
• the upper electrode may be a layer of Ca.
• the structure of an SM-OLED consists of a stack of hole injection layers, a hole transport layer, an emissive layer, an electron transport layer.
• An example of a hole injection layer is copper phthalocyanine (CuPC)
• the hole-transporting layer may be, for example, N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) benzidine (alpha-NPB).
• the emitting layer may for example be a layer of 4,4 ', 4 "-tri (N-carbazolyl) triphenylamine (TCTA) doped with tris (2-phenylpyridine) iridium [Ir (ppy) 3].
• TCTA tri (N-carbazolyl) triphenylamine
• the electron transport layer may be composed of tris- (8-hydroxyquinoline) aluminum (Alq3) or bathophenanthroline (BPhen),
• the upper electrode may be a layer of Mg / Al or LiF / Al.
• organic electroluminescent stacks are for example described in US6645645.
• the first electrode is based on doped and / or undoped mineral oxide deposited at high temperature, preferably by pyrolysis, in particular in the gas phase on the electroluminescent layer and the second electrode is metallic, for example based on silver or aluminum.
• the inorganic layer also acts as a barrier to alkalis.
• the substrate may be a flat, rigid or flexible substrate, such as plastic or metal, may further form or be part of one of the electrodes.
• the substrate preferably may be a glass, especially extraclair.
• a silicosodocalcic glass with less than 0.05% of Fe III or Fe 2 O 3 is chosen, in particular the diamond glass of St. Gobain, Albarino glass from Saint-Gobain.
• This substrate may be large, for example with an area greater than 0.5 or 1 m 2 .
• the device can be part of a multiple glazing, including a vacuum glazing or with an air knife or other gas or laminated glazing.
• the device can also be monolithic, include a monolithic glazing, to gain compactness and / or lightness.
• the device in particular a panel and / or a glazing
• the device including a glazing unit, may be intended for the building, thus forming an illuminating facade, an illuminating window, a glazing for a transport vehicle, such as a rear window, a side window or an automobile roof, or any other land, water or air vehicle, a glazing for street furniture such as a bus shelter, a display, a jewelery display, a display case, a shelf element, an aquarium, a greenhouse, may be intended for interior furnishing, a mirror, a piece of furniture, an electrically controllable glazing.
• the device can furthermore integrate any functionalization (s) known in the field of glazing, preferably on the non-illuminating face.
• any functionalization known in the field of glazing, preferably on the non-illuminating face.
• functionalizations mention may be made of: hydrophobic / oleophobic, hydrophilic / oleophilic, photocatalytic anti-fouling layer, thermal radiation (solar control) or infra-red (low-emissive) reflective stack, anti-reflective stack.
• the invention also relates to the use of a diffusing electroconductive layer as the electrode closest to the substrate of an organic electroluminescent device, having a blur greater than or equal to 2%.
• This diffusing electroconductive layer may be as described above.
• the present invention will be better understood on reading the following detailed description of nonlimiting exemplary embodiments and the figures following FIGS. 1 and 2 which illustrate points of comparison between a single-layer stacking structure and two-way layers of SnO 2: F on the one hand and SnO 2 / SnO 2: F on the other hand forming diffusing transparent electrodes according to the invention for electroluminescent devices.
• a first organic electroluminescent device for example of the OLED type, comprises a transparent substrate, preferably an extraclear and optionally textured glass, one side of which is coated in this order:
• an alkali barrier layer for example a silicon nitride or oxynitride, an aluminum nitride or oxynitride, a silicon oxide or oxycarbide, or alternating high refractive index layers, between 1.9. and 2,3, and of low refractive index layers, between 1.4 and 1.7, in particular according to the SisN4 / SiO2 or
• a first transparent electrode comprising a diffusing electroconductive layer (monolayer or multilayer) of an organic electroluminescent system, (OLED) typically formed:
• a layer of LiF a second reflecting electrode, in particular a metal electrode, preferably in the form of an electroconductive layer, in particular based on silver or aluminum.
• the first transparent electrode may or may not comprise other electroconductive layers above or below the diffusing layer, for example of 11TO, or a thin Ag layer, of ZnO: Al, for example of ⁇ ZO of thickness less than or equal to at 50 nm.
• the second electrode may also be a (semi) transparent and optionally diffusing electrode, for example identical to the first (semi) transparent electrode.
• a reflector on the other side for example a metal layer with a thickness of 150 nm and preferably formed of Ag, Al or Au.
• This diffusing electroconductive layer (monolayer or multilayer) having a blur greater than or equal to 2% can be either:
• a textured TCO layer after deposition for example etched with acid or etched by plasma, for example ITO with a thickness between 60 and 500 nm or ZnO: Al.
• (monolayer or multilayer) may be roughness induced by a textured inorganic sub-layer or naturally rough after deposition.
• SnO 2 is deposited by CVD followed by 20 nm of SiO 2 .
• a layer of ZnO of 100 nm is deposited by magnetron sputtering. The ZnO layer is etched with acid and deposited over a 60 nm diTo or IZO layer.
• Another example consists in depositing a layer of SiSnO x by CVD with a thickness of 100 nm followed by a thin layer of Ag with a thickness of between 5 and 20 nm.
• this diffusing electroconductive layer may be of roughness induced by the barrier sub-layer which is textured and / or by the glass which is textured.
• a layer of SiO 2 is deposited by CVD.
• the SiO2 layer is etched by plasma to obtain a rough surface.
• a TCO layer such as SnO2: F, ZnO: Al, ITTO, IZO, or a thin metal layer is then deposited.
• a second organic electroluminescent device comprises a preferably mineral and optionally transparent and / or rough substrate, one side of which is coated in this order: - optionally of the alkaline barrier layer,
• a reflecting electrode in the form of an electroconductive layer especially a metallic layer, preferably based on silver or aluminum, palladium, gold or molybdenum,
• the organic electroluminescent system OLED a transparent electrode (monolayer or multilayer) comprising a diffusing electroconductive layer.
• This diffusing electroconductive layer (monolayer or multilayer) having a blur greater than or equal to 2% can be either: a layer deposited by cathodic sputtering or evaporation and textured after deposition, for example etched with acid or by chemical etching, for example 11TO or ZnO: Al or IZO, or a thin metallic layer,
• a layer deposited by cathodic sputtering for example of ITTO, directly on a textured underlayer, also deposited by cathodic sputtering, for example acid-etched ZnO, or by evaporation as a layer of textured aluminum,
• the other face of the selected substrate glass may comprise one or more layers bringing other functionalities, as described later.
• the following are examples of the production of diffusing electroconductive layers in the form of a tin oxide monolayer or an undoped and doped tin oxide (or zinc) multilayer.
• the partially coated substrate is then heated again and brought into contact with a fluorinated tin compound or a tin compound and a fluorinated compound to obtain the second SnO 2 : F layer.
• tin compounds can be used provided that the fluorine donor is supplemented with: CF 3 COOH, HF, CH 3 CH 2 F 2 , CHClF 2 , CH 3 CClF 2 , CHF 3 , CF 2 Cl 2 , CF 3 Cl, CF 3 Br.
• the chemical deposition method is used.
• CVD method gaseous phase by which a vapor of tin compounds and a oxidizing gas in contact with a high temperature transparent substrate, or the spraying method by which a solution of the tin compound is sprayed onto the transparent substrate at high temperature by means of a sprayer.
• the CVD method is preferably used by which a vapor mixture of tin compounds, oxidizing gas, etc. is contacted with the transparent substrate heated to a temperature of 400 to 700 ° C., preferably in the vicinity of the temperature range of between 600 and 680 ° C.
• a transparent electroconductive film with two layers is deposited, that is to say, a SnO 2 layer and then another SnO 2: F layer, deposited in overlap.
• the thickness of the two-layer film SnO 2 / SnO 2: F is preferably 0.6 to 1.5 microns.
• At least one dielectric layer is deposited on the substrate by cathodic sputtering, in particular assisted by a magnetic field and preferably reactive in the presence of oxygen and / or nitrogen, in an enclosure.
• the ZnO layer is obtained from a cathode of a doped metal, that is to say containing a minority element: by way of illustration, it is common to use zinc cathodes containing a minor proportion another metal such as aluminum or gallium.
• P [kW] 4.0
• I [A] 40
• U [V] 360
• Gas [sccm] 350 (Ar).
• diffusing electroconductive layers in the form of monolayers of tin oxide or zinc oxide or of undoped and doped tin oxide or zinc oxide multilayers. Examples of diffusing electroconductive layers
• the first series of deposits comprises a single layer of SnO 2: F, deposited at high temperature (at least greater than 600 ° C.) by CVD, by decomposition of precursors based on those mentioned above + air + H 2 O + a fluorinated compound .
• the first example below shows the difference between a monolayer of SnO 2: F deposited at high temperature T1 (greater than 600 ° C.) and the same layer produced at a temperature T2 greater than at least 30 ° C. at T1.
• the blur value is almost doubled from T1 to T2.
• the second example shows the relationship between the dopant flow rate and the blur for a thick layer deposited at high temperature (greater than 600 ° C.)
• doping decreases TL.
• the SnO2 sublayer is used to create the optimal conditions at blur.
• the SnO 2 sublayer promotes high light transmission.
• the SnO2: F overlay also makes it possible to adjust the resistance per square of the TCO.
• a ZnO overlay may be deposited by a magnetron sputtering route on the SnO 2 / SnO 2: F overlay, this overcoating being a protective layer against hydrogenated plasma attacks and having a thickness of between 10 and 50. nm and preferably close to 20 nm.
• Thin layers are thus deposited on the surface to give them a particular property, for example that which consists in allowing the substrate to remain as clean as possible, whatever the environmental aggressions, that is to say aimed at permanence of the surface and appearance properties over time, and in particular making it possible to space the cleanings, by succeeding in gradually eliminating the soils gradually deposited on the surface of the substrate, in particular soils of organic origin such as fingerprints or volatile organic products present in the atmosphere, or even soot-type soiling, dust pollution.
• photo-catalytic coatings on substrate, which have a marked "antifouling" effect and that can be manufactured industrially.
• These photo-catalytic coatings generally comprise at least partially crystallized titanium oxide, incorporated in said coating in the form of particles, in particular of size ranging from a few nanometers (3 or 4) to 100 nm, preferably around 50 nm for the essential crystallized form anatase or anatase / rutile.
• Titanium oxide is in fact part of the semiconductors which, under the action of light in the visible range or ultraviolet, degrade organic products which are deposited on their surface.
• the photo-catalytically active coating results from a solution based on TiO 2 nanoparticles and a mesoporous silica (SiO 2) binder.
• the photo-catalytically active coating results from a solution based on TiO 2 nanoparticles and an unstructured silica (SiO 2) binder.
• titanium oxide which is at least partially crystallized because it has been shown to be much more efficient in terms of photo-catalytic property than amorphous titanium oxide.
• it is crystallized in anatase form, in rutile form or in the form of a mixture of anatase and rutile.
• the coating is produced in such a way that the crystallized titanium oxide it contains is in the form of "crystallites", that is to say single crystals, having an average size of between 0.5 and 100 nm, preferably 3 to 60 nm. It is indeed in this range of dimensions that the titanium oxide appears to have an optimal photo-catalytic effect, probably because the crystallites of this size develop a significant active surface.
• the photocatalytically active coating may also comprise, in addition to titanium oxide, at least one other type of mineral material, especially in the form of an amorphous or partially crystalline oxide, for example silicon oxide (or a mixture of oxides), titanium, tin, zirconium or aluminum.
• This mineral material can also participate in the photo-catalytic effect of the crystallized titanium oxide, itself having a certain photo-catalytic effect, even small compared to that of crystallized TiO 2, which is the case of the amorphous or partially crystalline titanium oxide.
• This doping can also be done by surface doping only of the titanium oxide or of the whole coating, surface doping carried out by covering at least a portion of the coating with a layer of oxides or metal salts, the metal being selected from iron, copper, ruthenium, cerium, molybdenum, vanadium and bismuth.
• the photo-catalytic phenomenon can be amplified by increasing the yield and / or kinetics of the photo-catalytic reactions by covering the titanium oxide or at least a part of the coating which incorporates it with a noble metal in the form of a thin layer.
• a noble metal in the form of a thin layer. platinum, rhodium, silver.
• the coating with photocatalytic property also has an outer surface of hydrophilic and / or oleophilic pronounced, especially in the case where the binder is inorganic, which brings two significant advantages: a hydrophilic character allows a perfect wetting of water which can be deposited on the coating, thus facilitating cleaning.
• hydrophilic character can also have an oleophilic character, allowing the "wetting" of organic soils which, as for water, then tend to deposit on the coating in the form of a continuous film less visible than " spots well localized.
• An "organic dirt” effect is thus obtained in two stages: as soon as it is deposited on the coating, the soil is already not very visible. Then, gradually, it disappears by radical degradation initiated by photo-catalysis.
• the thickness of the coating is variable, it is between a few nanometers and a few microns, typically between 50 nm and 10 microns.
• the choice of the thickness may depend on various parameters, in particular the envisaged application of the substrate, or on the size of the TiO 2 crystallites in the coating.
• the coating may also be chosen with a more or less smooth surface: a low surface roughness may indeed be advantageous if it makes it possible to develop a larger active photo-catalytic surface. However, too pronounced, it can be penalizing by favoring the encrustation, the accumulation of soiling.
• the functionality that is reported on the other side of the substrate may be constituted by an anti-reflection coating thus maximizing the energy conversion efficiency.
• - Ni and / or n3 are between 2.00 and 2.30, in particular between 2, 15 and 2.25, and preferably close to 2.20.
• - n2 and / or ⁇ .4 are between 1.35 and 1.65.
• ei is between 5 and 50 nm, in particular between 10 and 30 nm, or between 15 and 25 nm.
• - ⁇ 2 is between 5 and 50 nm, especially less than or equal to 35 nm or 30 nm, in particular between 10 and 35 nm.
• e3 is between 40 and 180 nm and preferably between 45 and 150 nm.
• e 4 is between 45 and 110 nm and preferably between 70 and 105 nm.
• the most suitable materials for forming the first and / or third layer of the stack A which is of anti-reflective type, those with a high index, are based on mixed nitride of silicon and zirconium or a mixture of these nitrides. mixed. In a variant, these high-index layers are based on mixed nitrides of silicon and tantalum or a mixture of these. All these materials may be optionally doped to improve their chemical and / or mechanical and / or electrical resistance properties.
• the most suitable materials for constituting the second and / or fourth layer of the stack A are based on silicon oxide, oxynitride and / or silicon oxycarbide or based on a mixed oxide of silicon and aluminum.
• Such a mixed oxide tends to have a better durability, especially chemical, than pure SiO 2 (an example is given in patent EP-791 562).
• a preferred embodiment of this antireflection stack is the substrate / Si3N4 / SiO2 / SisN4 / SiO2 form, it being understood that the choice of the different thicknesses and in particular at the level of the thicknesses of the third and fourth layers is optimized so that the light transmission is located. in most of the spectrum (ie in the visible and in the infrared).

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• 2007
  • 2007-02-21 EP EP07731655A patent/EP1987702A2/de not_active Withdrawn
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  • 2007-02-21 JP JP2008555851A patent/JP2009531811A/ja active Pending
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