EP1992015A2 - Matériau composite et son procédé de production - Google Patents

Matériau composite et son procédé de production

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Publication number
EP1992015A2
EP1992015A2 EP07701341A EP07701341A EP1992015A2 EP 1992015 A2 EP1992015 A2 EP 1992015A2 EP 07701341 A EP07701341 A EP 07701341A EP 07701341 A EP07701341 A EP 07701341A EP 1992015 A2 EP1992015 A2 EP 1992015A2
Authority
EP
European Patent Office
Prior art keywords
microns
vol
filler
range
ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07701341A
Other languages
German (de)
English (en)
Inventor
Erich Neubauer
Paul Angerer
Réne NAGEL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AIT Austrian Institute of Technology GmbH
Original Assignee
Austrian Research Centers GmbH ARC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austrian Research Centers GmbH ARC filed Critical Austrian Research Centers GmbH ARC
Publication of EP1992015A2 publication Critical patent/EP1992015A2/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0084—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ carbon or graphite as the main non-metallic constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
    • C22C47/02—Pretreatment of the fibres or filaments
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
    • C22C47/14—Making alloys containing metallic or non-metallic fibres or filaments by powder metallurgy, i.e. by processing mixtures of metal powder and fibres or filaments
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/254—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/257—Arrangements for cooling characterised by their materials having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • C22C2026/002—Carbon nanotubes

Definitions

  • the invention relates to a material according to the preamble of claim 1, especially a composite material composed of several components and thus offers the possibility of the coefficient of thermal expansion in a range of 4 to 12 ppm / K by the choice of composition and by the manufacturing conditions adjust.
  • the material should be characterized by a high thermal conductivity and thermal conductivity.
  • the invention further relates to the production process for such a material using rapid sintering processes or a process according to the preamble of claim 15.
  • a material of the type mentioned above is characterized by the features recited in the characterizing part of claim 1
  • a method of the type mentioned above is characterized according to the invention with the features of claim 15.
  • the material according to the invention comprises a matrix A with a high thermal conductivity or thermal diffusivity: here, copper comes into consideration or copper-based materials or alloys.
  • a pure copper matrix or a copper-based matrix has a coefficient of expansion in the range of 16-20 ppm / K. For this reason, the matrix content should be kept as low as possible.
  • the material further comprises a metallic and / or ceramic filler B, with the thermal expansion in the range of 4 to 6 ppm / K, which either has a thermal conductivity of about 50-200 W / mK (in the case of the metallic
  • the material further comprises a thermally highly conductive filler C, which has a low coefficient of thermal expansion.
  • a thermally highly conductive filler C which has a low coefficient of thermal expansion.
  • a filler on Carbon base selected, such as graphite, carbon fibers, carbon / nanofibers, carbon nanotubes and / or diamond. All of these fillers have a coefficient of expansion (at least in one spatial direction) that ranges from about -2 to +2 ppm / K.
  • the filler C may optionally be coated with a functional layer D, which allows a good connection to the matrix A and / or the filler B.
  • the properties of the material are improved if a homogeneous distribution of the fillers B and C in the metal matrix A is present in the material.
  • the material according to the invention obtains an advantageous microstructure by the features of claims 8 to 11. Good strength properties are achieved with the features of claim 12.
  • An inventive material is advantageously characterized in that the material has an expansion coefficient of 4 to 12 (.10 "6 K '1 ) in a temperature range of 2O 0 C to 5O 0 C.
  • Figure 1 Basic structure of the composite material: Metallic matrix filler A, with metallic or ceramic fillers B and thermally highly conductive carbon-based filler C.
  • the filler C may be coated with a coating D.
  • Coefficient of expansion (calculated by mixing rule) of a composite consists of matrix A and filler C as a function of the volume fraction of filler C.
  • Matrix A consists of pure copper or a copper alloy. To one Coefficient of expansion below 8 ppm / K, a volume fraction of 55 vol.% Filler C is provided.
  • Figure 3 Theoretical dependence of the thermal expansion coefficient of a composite material (calculated by mixing rule) consists of matrix A with 50 vol.% Filler C with variation of the volume content of filler B.
  • the matrix A consists of pure copper or a copper alloy.
  • the filler B is characterized by a thermal expansion coefficient of 4 ppm / K.
  • Figure 1 shows the structure of the material.
  • a direct mixture of copper or copper-based matrices with the carbon-based filler poses three problems: a) Generally, a poor thermal transition between copper and carbon is observed. This is partly due to the lack of
  • Figure 2 shows the expansion properties as a function of filler content C. c) Especially in the case of diamond must in the selection of the
  • coated fillers can be used.
  • the fillers are made with a layer of one
  • Coefficient of low expansion material with good affinity to the carbon filler such as Mo, W, Cr, Ta, AIN coated.
  • the thickness of the coating may be in the range of a few 10 nm to a few 100 nm, or the proportion of the total material at about 0.1 to 5 vol.%.
  • an improvement in the thermal transition but also by skillful
  • a metallic filler B Selection of a metallic filler B can be achieved. b) In order to achieve a coefficient of thermal expansion in the composite that is as close as possible to that of Al 2 O 3 or AlN, the copper-based matrix with an expansion coefficient of 16-20 ppm / K can be modified accordingly, so that the expansion coefficient is reduced.
  • Suitable components for reducing the coefficient of expansion of the copper-based matrix are: ceramic fillers which have a low coefficient of thermal expansion in the range of 4 to 6 ppm / K and which do not disproportionately deteriorate (as would be the case with Ti, for example) cause thermal conductivity.
  • ceramic fillers which have a low coefficient of thermal expansion in the range of 4 to 6 ppm / K and which do not disproportionately deteriorate (as would be the case with Ti, for example) cause thermal conductivity.
  • the ceramic filler does not significantly affect the thermal conductivity of the copper-based matrix (through an approximate linear relationship corresponding to the
  • Suitable representatives of such a filler are Cu.sub.2O or Al.sub.2O, metallic fillers which have a thermal conductivity of at least 50 W / mK and an expansion coefficient of between 4 and 6 ppm / K, as in the case of Mo, Cr or W.
  • a ceramic and / or metallic filler content in the amount of at least 5 vol.% Is used.
  • a particularly effective reduction of the expansion coefficient becomes possible when the ceramic filler Cu 2 O is generated in situ. This can be achieved by using copper
  • the present invention describes materials which are composed essentially of three components: metallic matrix A, ceramic and / or metallic filler B, on
  • Carbon-based filler C may optionally be provided with a coating D.
  • the special choice of the metallic and / or ceramic filler B has the following reason:
  • the filler should on the one hand have a very low coefficient of thermal expansion and at the same time either have a high thermal conductivity and / or not disturb the thermal conductivity of the copper-based matrix sensitively.
  • Copper oxide (cuprite, Cu2O) is a ceramic filler characterized by a low thermal expansion coefficient of about 4-6 ppm / K.
  • the Cu2O content in a copper matrix negatively affects them only in an approximately linear context.
  • the thermal conductivity can ⁇ and also the thermal expansion coefficient ⁇ of a matrix-Inclusion mixture from the volume fractions of the individual components is calculated (VMat ⁇ x V
  • n ki US j On.): A V Matr ⁇ x • ⁇ Uatr ⁇ x + V 1Mus ⁇ nn • ⁇ h ⁇ lmwn
  • Expansion coefficient was reduced to a value of about 10 ppm / K (originally 16 ppm / K).
  • results (with a thermal conductivity of the diamond of 1000 W / mK and an expansion coefficient of 1 ppm / K) has a thermal conductivity of 600 W / mK and an expansion coefficient of about 5.5 ppm / K.
  • the thermal transition between the matrix and the carbon-based filler must not be neglected.
  • FIG. 3 shows the possibility of varying the coefficient of expansion B by the variation of the filler content B, as with a constant filler content C of 50% by volume.
  • this can be mixed as a filler directly in the form of Cu2O or CuO particles with the matrix or with the thermally highly conductive filler C or as an alternative method, the Cu2O also in-situ during the preparation of Composite are formed directly.
  • This is achieved either by a corresponding process control (no reducing atmosphere) and / or by the use of very fine-grained copper powders in the submicron grain size range with a high specific surface area.
  • a corresponding process control no reducing atmosphere
  • copper nanopowders it is possible to produce finely divided Cu2O oxides in a high proportion due to the high oxygen affinity of these powders.
  • a composite with reduced thermal expansion can be achieved even if special metallic fillers are selected which have a low coefficient of thermal expansion of 4-6 ppm / K and additionally have a positive influence on the thermal contact between matrix and carbon-based fillers, even if they are used in a large amount (> 5 vol.%).
  • a large amount of the metallic fillers makes it possible to dispense with the coating of the carbon-based filler optionally can be, without causing a significant deterioration of the thermal properties.
  • a high metallic filler content and / or a coating of the filler in combination with a high sintering temperature allows the use of extremely short sintering times. Due to the high metal filler content, only short diffusion distances to the carbon-based filler C are traceable.
  • Materials with a low thermal expansion coefficient and a thermal conductivity of 200 W / m K and more are popular materials in the field of electronics, either as a carrier plate or as a heat sink.
  • the increasing demands of the electronics industry require materials with thermal conductivities of more than 300 W / mK and an expansion coefficient in the range of 6-10 ppm / K. In many cases, these requirements can not even be met by composite materials such as Cu-Mo, Cu-W or AISiC.
  • AIN and SiC can be used as a heat sink, they are expensive.
  • the thermal properties are about 270 W / mK for SiC and 250 W / mK for AIN.
  • Heat sinks for laser applications are already made of diamond or CBN is used in laser diodes.
  • Diamond can be produced by CVD or by high-temperature high-pressure process.
  • CBN is produced by the latter method. Both are just as expensive, and limited in size.
  • the coefficient of expansion of CVD diamond is 2.3 ppm / K, of cBN 3.7 ppm / K and is therefore lower than that of GaAs (5.9ppm / K) or InP (4.5ppm / K). This suffers from the reliability during operation but also during the soldering process.
  • Diamond-based composites such as Cu-diamond, Al-diamond or Ag-diamond represent a promising alternative.
  • Patents US 6,171,691 and EP 0898310 A2 describe a material consisting of a metal such as Cu, Ag, Au, Al, Mg or Zn, a carbide formed from the metals of the Periodic Table 4a and 5a and Cr and a Diamant glycollstoff.
  • the diamond filler is covered by a carbide layer. The preparation of the material takes place via the liquid phase of the metal matrix.
  • Patent WO 2004/044950 A3 describes a material consisting in
  • Patent WO 2004/080913 A1 describes a method for producing a
  • Diamond-based material using Cu, Ag, Au or their alloys Here also wetting-promoting alloying elements ⁇ 3 at.%.
  • Patent US 2004 / 0183172A1 describes a material consisting of a metal based on copper or silver, wherein the attachment to the diamond takes place via a metal carbide.
  • Patent EP 1160860 A1 describes a material which consists of Cu, Al or Ag, wherein various elements are used to improve the wetting in order to improve the wettability of graphite or carbon in the liquid-phase infiltration process of a porous preform.
  • Patent US 2005/0051891 A1 describes a material with 60-90 vol.%
  • the matrix used here is copper. With this method it is possible to obtain a material with a coefficient of expansion below 6 ppm / K. In order to obtain a dense compact body, however, pressures of 1 to 6 GPa are used here. Such a process is costly (required Sintreranlageri), also the production is limited to simple geometries. Appropriate measures are taken to avoid the formation of copper oxides.
  • the oxygen content is less than 0.07 wt.%.
  • Patents US 5,783,316 and US 6,264,882 describe a material of the
  • Liquid phase infiltration of a porous preform is produced.
  • Coated diamonds are also used, e.g. with W, Zr, Re, Cr and Ti layers.
  • the matrix used here is Cu, Ag or Cu-Ag.
  • the porous preform is in a second
  • Expansion properties is thus a method that works especially quickly and therefore cost-effective.
  • the production takes place while applying mechanical pressure in combination with a suitable temperature control.
  • the corresponding powder mixture is filled in a die, for example made of graphite, and optionally precompressed at a pressure of a few MPa.
  • the precompressed press die is inserted into a corresponding conductive or induction heated hot press and then evacuated.
  • the efficient production is achieved by a high heating / cooling rate in combination with a short sintering time.
  • a high heating / cooling rate By deliberately avoiding a reducing sintering atmosphere, it is not only possible to use simply constructed and therefore cost-effective systems, but also to achieve in situ oxidation to form Cu 2 O in order to reduce the coefficient of expansion of the matrix.
  • This in-situ oxidation can be controlled both by the grain size of the starting copper powder and / or by the process conditions used.
  • High heating rates (of a few 100 K / min) can be achieved by processes such as induction or conductively heated hot presses. Modified methods are, for example, spark plasma sintering or field assisted sintering.
  • the sample After reaching a temperature of 900 0 C and a holding time of 2 minutes, the sample was cooled at a cooling rate of about 200 ° C / min to about 400 0 C; after a temperature of about 100 0 C was reached, the vacuum vessel was vented.
  • the proportion of Cu2O was determined to be about 14.2 vol.% Via XRD.
  • the samples were examined by means of a dilatometer in a temperature range from RT to 300 ° C. A mean expansion coefficient of 8.6 ppm / K in this range was determined, at 50 0 C this was 7.6 ppm / K. according to figure 4.
  • Example 2 8.84 g of synthetic diamond powder having a particle size of 300 ⁇ m were coated with a layer of about 200 nm Mo via a PVD process and dried with 33.66 g of Cu having a particle size ⁇ 15 ⁇ m for 2 hours in a turbulam mixer mixed. Of these, 8 g were filled into a 20 mm diameter graphite die and precompressed at a pressure of 5 MPa. The filled and pre-compacted graphite die was placed in an induction heated hot press and evacuated to a pressure of 10 "2 mbar, simultaneously increasing the mechanical pressure to 50 MPa and a heating rate of 150 ° C / min by means of an induction coil.
  • the sample was cooled at a cooling rate of about 200 ° C / min to about 400 0 C; after a temperature of about 100 0 C was reached, the vacuum vessel was vented.
  • the proportion of Cu2O was determined to be about 8.2% by volume over XRD ( Figure 5).
  • the measurement of the coefficient of thermal expansion was carried out by means of dilatometer in a temperature range from RT to 300 0 C measured. An average expansion coefficient of 10.8 ppm / K in this range was determined, at 50 ° C this was 9.6 ppm / K.
  • the filled and precompacted graphite die was placed in an inductively heated hot press and evacuated to a pressure of 10 "2 mbar, simultaneously increasing the mechanical pressure to 50 MPa and achieving a heating rate of 150 ° C / min by means of an induction coil.
  • the sample After reaching a temperature of 95O 0 C and a holding time of 2 minutes, the sample was cooled at a cooling rate of about 200 ° C to about 400 0 C; after a temperature of about 100 0 C was reached, the vacuum vessel was vented. To measure the thermal expansion coefficient, the samples were examined by means of a dilatometer in a temperature range from RT to 300 ° C. An average expansion coefficient of about 8.1 ppm / K in this range was determined, at 50 0 C this was 7.2 ppm / K.
  • the filled and precompacted graphite die was placed in a Spark Plasma sintering unit and evacuated to a pressure of 10 "1 mbar, simultaneously increasing the mechanical pressure to 30 MPa and achieving a heating rate of 150 ° C / min using pulsed DC a temperature of 900 0 C and a holding time of 2 minutes, the sample was cooled at a cooling rate of about 200 0 C to about 400 0 C, after which a temperature was reached about 100 0 C, the vacuum vessel was vented by using.
  • Cu nanopowders under non-reducing conditions showed an in-situ formation of Cu 2 O.
  • the proportion of Cu 2 O was determined to be about 18.7% by volume ..
  • the samples were measured by means of a dilatometer in a temperature range from RT to 300 ° C.
  • a mean expansion coefficient of 8.5 ppm / K in this range was determined, at 50 ° C. it was 7.4 ppm / K.
  • the sample After reaching a temperature of 900 0 C and a holding time of 2 minutes, the sample was cooled at a cooling rate of about 200 ° C to about 400 0 C; after a temperature of about 100 ° C was reached, the vacuum vessel was vented.
  • the proportion of Cu2O was estimated to be about 1.9% by volume using XRD measurement ( Figure 6).
  • Figure 6 To measure the thermal expansion coefficient, the samples were examined by means of a dilatometer in a temperature range from RT to 200 ° C. An average coefficient of expansion in the xy direction of 10.8 ppm / K in this range was determined, at 50 ° C. it was 8.9 ppm / K.
  • Example 6 23.32 g of synthetic diamond powder with a particle size of 50-60 ⁇ m, 6.82 g
  • Mo powders with a particle size ⁇ 50 ⁇ m, 53.34 g Cu with a particle size ⁇ 30 ⁇ m were dry mixed for 2 hours in a Turbula mixer and filled in a graphite matrix with a diameter of 65 mm and precompacted at a pressure of 5 MPa.
  • the filled and pre-compacted graphite die was set in a hot press and evacuated to a pressure of 10 mbar ⁇ 2 and purged with hydrogen. At the same time, the mechanical pressure was increased to 20 MPa and a heating rate of 50 ° C / min was applied.
  • the sample After reaching a temperature of 1000 0 C and a holding time of 2 minutes, the sample was cooled at a cooling rate of about 200 0 C to about 400 0 C; after a temperature of about 100 0 C was reached, the vacuum vessel was vented. To determine the thermal expansion coefficient, the sample was measured in a temperature range from RT to 300 ° C. The proportion of Cu2O was determined to be about 1.2% by volume by XRD measurement. An average expansion coefficient of about 8.8 ppm / K in this range was determined, at 50 ° C this was 8.4 ppm / K. ( Figure 7)
  • the filled and precompacted graphite die was placed in an induction heated hot press and evacuated to a pressure of 10 "2 mbar, simultaneously increasing the mechanical pressure to 50 MPa and achieving a heating rate of 150 ° C / min by means of an induction coil of 1000 0 C and a holding time of 2 minutes, the sample was cooled at a cooling rate of about 200 0 C to about 400 0 C;. after a temperature was reached about 100 0 C, the vacuum vessel was vented the proportion of Cu2O was To determine the thermal expansion coefficient, the sample was measured in a temperature range from RT to 300 ° C. A mean expansion coefficient of approximately 6.6 ppm / K in this range was determined at 5O 0 C was 5.9 ppm / K ( Figure 7)
  • Example 9 0.53 gr Vitreous Grown Carbon Fibers were coated with 5.6 g of Cu powder
  • Grain size ⁇ 30 microns and 2.6 g of Mo were mixed with isopropanol for 24 hours, dried and filled in a graphite die with a diameter of 20 mm and with a Pressure of 5 MPa precompacted.
  • the filled and vorkom pact graphite die was set in a hot press and evacuated to a pressure of 10 mbar '. 2
  • the mechanical pressure was increased to 20 MPa and a heating rate of 150 ° C / min was applied.
  • the sample was cooled at a cooling rate of about 200 ° C to about 400 ° C; after a temperature of about 100 0 C was reached, the vacuum vessel was vented.
  • the proportion of Cu2O was determined to be about 1.6 vol.% By XRD measurement.
  • the thermal expansion coefficient was measured by dilatometer for the xy direction in a temperature range of RT to 200 0 C.
  • An average expansion coefficient of about 13.3 ppm / K in this range was determined, at 50 ° C this was 11, 8, ppm / K.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)

Abstract

L'invention concerne un matériau comprenant : une matrice métallique A, laquelle, ou son matériau, présente dans au moins une direction spatiale, un coefficient de dilatation thermique de l'ordre de 16 à 20 ppm/K, et qui est formée de cuivre ou d'un alliage de cuivre, et qui représente 10 à 75% en volume du matériau; au moins une charge métallique et/ou céramique B qui, dans au moins une direction spatiale, présente un coefficient de dilatation thermique de l'ordre de 4 à 6 ppm/K, et qui est formée de Cu<SUB>2</SUB>O et/ou d'Al<SUB>2</SUB>O<SUB>3</SUB> et/ou d'AlN et/ou de Mo et/ou de Cr et/ou de W et/ou de B et/ou de Ta, et qui se présente dans le matériau, en une quantité de 1 à 40% en volume; et au moins une charge à base de carbone C, qui est caractérisée par un coefficient de dilatation thermique de -2 à +2 ppm/K dans au moins une direction spatiale, qui possède une haute conductibilité thermique et qui est formée de graphite et/ou de fibres de carbone et/ou de nanofibres de carbone et/ou de nanotubes de carbone et/ou de diamant, et qui se présente en une quantité de 5 à 65% en volume.
EP07701341A 2006-03-09 2007-02-28 Matériau composite et son procédé de production Withdrawn EP1992015A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT0038906A AT503270B1 (de) 2006-03-09 2006-03-09 Verbundwerkstoff und verfahren zu seiner herstellung
PCT/AT2007/000100 WO2007101282A2 (fr) 2006-03-09 2007-02-28 Matériau composite et son procédé de production

Publications (1)

Publication Number Publication Date
EP1992015A2 true EP1992015A2 (fr) 2008-11-19

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Country Status (3)

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EP (1) EP1992015A2 (fr)
AT (1) AT503270B1 (fr)
WO (1) WO2007101282A2 (fr)

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DE102008034258B4 (de) 2008-07-17 2012-01-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gesinterter Werkstoff und Verfahren zu dessen Herstellung
WO2011049479A1 (fr) * 2009-10-21 2011-04-28 Andrey Mikhailovich Abyzov Matériau composite ayant une conductivité thermique élevée et son procédé de fabrication
CN101706226B (zh) * 2009-11-23 2012-01-25 陈盈同 一种散热结构及其制造方法
US8475132B2 (en) * 2011-03-16 2013-07-02 General Electric Company Turbine blade assembly
EP2606996A1 (fr) * 2011-12-23 2013-06-26 EPoS S.r.L. Procédé de frittage de matériaux composites de matrice métallique
DE102017216290B4 (de) * 2017-09-14 2022-09-08 Freie Universität Berlin Verbundwerkstoff und Verfahren zu dessen Herstellung, Kühlkörper und elektronisches Bauteil
CN109811280A (zh) * 2019-03-13 2019-05-28 中国科学院电工研究所 一种铜/碳纳米管复合材料及其制备方法
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