EP2005129A1 - Procédé et dispositif de thermométrie sans contact - Google Patents

Procédé et dispositif de thermométrie sans contact

Info

Publication number
EP2005129A1
EP2005129A1 EP07712383A EP07712383A EP2005129A1 EP 2005129 A1 EP2005129 A1 EP 2005129A1 EP 07712383 A EP07712383 A EP 07712383A EP 07712383 A EP07712383 A EP 07712383A EP 2005129 A1 EP2005129 A1 EP 2005129A1
Authority
EP
European Patent Office
Prior art keywords
radiation
substrate
process chamber
range
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP07712383A
Other languages
German (de)
English (en)
Inventor
Robert Michael Hartung
Uwe Keim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Thermal Solutions GmbH and Co KG
Original Assignee
Centrotherm Thermal Solutions GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Thermal Solutions GmbH and Co KG filed Critical Centrotherm Thermal Solutions GmbH and Co KG
Publication of EP2005129A1 publication Critical patent/EP2005129A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Definitions

  • the invention relates to a method for contactless temperature measurement of substrates in a radiation heated process chamber, in particular substrates of glass, silicon or graphite in a temperature range of 20 0 C - 1300 0 C, and an arrangement for carrying out the method.
  • RTP Rapid Temperature Processing
  • the substrates consisting of glass, silicon, graphite or other materials, eg. As silicon wafers or solar cells, exposed within the process chamber targeted rapid temperature changes.
  • the heating is done by powerful infrared radiant heater or halogen lamps, either in the process chamber, z. B. on both sides of the substrate, or outside the process chamber are arranged.
  • the wall of the process chamber must consist of an infrared permeable material. Suitable for this is z. As quartz. It is necessary to continuously monitor the temperature of the object during the entire process. This is especially the case with RTP, ie with processes with rapid temperature changes. Usually, such a temperature measurement takes place by measuring the radiation emitted by the object in the infrared range.
  • the photon emission originating from the substrate is determined with an infrared detector.
  • Substrates may be, for example, silicon wafers, solar cells made of silicon, or even other flat substrates made of graphite or glass.
  • thermocouple thermocouple until in the range of 400 0 C takes place. Then, at higher temperatures, the current temperature is measured by a pyrometer.
  • the disadvantage here is that there is a temperature jump when switching the sensors in the heating and in the cooling phase of the substrate. As a result, the energy input is changed to the substrate, which can lead to unwanted process results.
  • the narrow frequency range between 2.7 ⁇ m and 2.8 ⁇ m wavelength emanating from halogen lamps is achieved by using an artificial double OH reactor chamber.
  • Substrate (semiconductor wafer) outgoing radiation are coupled out by a fused into the reactor chamber lens made of OH-free quartz glass. From the intensity of this radiation then the temperature of the substrate can be calculated.
  • 300 0 C does not provide sufficient radiation from the substrate, so that between a thermocouple, which is connected to the substrate and a pyrometer for higher temperatures, during the Measurement must be switched. This can cause a sharp temperature jump in the control at heating ramps of 100 ° Kelvin per second. A temperature control from RT to 300 0 C, as required by RTP method, is not possible here.
  • the invention is now based on the object to provide a method and an arrangement for contactless temperature measurement of substrates in radiation-heated oven, with the in the range of 20 0 C - 1300 0 C a contactless continuous temperature measurement is made possible, with a switching between different Sensors should be avoided.
  • the object underlying the invention is achieved in a method of the type mentioned in that part of the outgoing from the substrate secondary radiation in the long-wave infrared range is coupled through a filter from the process chamber and fed to a Temperaturmessgerat.
  • the measurement of the secondary radiation emitted by the substrate is carried out in a wavelength range which lies outside the wavelength range of the radiation emitted by the radiation source.
  • the measurement is preferably carried out in the long-wave infrared range between 8-14 ⁇ m, but preferably in the range of 8-9.5 ⁇ m, the secondary radiation being coupled out through a window. If required, this window can also be optimized for other wavelength ranges.
  • the inventive method allows a continuous temperature measurement in the range between 20 0 C - 1300 0 C, without having the otherwise metrologically induced temperature jump in the measurement. This will allow the development and adjustment of new processes in radiant heated process chambers and furnace much easier.
  • the substrates can be measured directly and, in addition, the measurement in vacuum and in the atmosphere is equally easily possible.
  • the stabilization time after switching the temperature sensors is eliminated, so that thus the process time is shortened.
  • the object is achieved in an arrangement for carrying out the method, consisting of a quartz processing chamber with a substrate located in this process chamber, reflectors respectively at least above and below the process chamber and a radiation heater associated with the process chamber, that for the coupling of the substrate outgoing secondary radiation to the process chamber, a quartz tube is flanged such that its longitudinal axis is directed perpendicularly through the wall of the process chamber on one side of the substrate and that at the other end of the quartz tube, a radiation measuring device is arranged, wherein immediately before the radiation measuring a quartz tube interrupting window a filter is arranged.
  • the filter should have a transmittance of at least 90% for long-wave infrared radiation in the range of 8-14 ⁇ m, but at least 8-9.5 ⁇ m, and preferably consist of calcium fluoride, barium fluoride or germanium.
  • FIG. 1 shows a schematic sectional view of an arrangement for non-contact temperature measurement of substrates in a process chamber heated with radiation
  • Fig. 2 a diagram; which shows the course of the emissivity at different wavelengths for different materials and material temperatures.
  • Fig. 1 shows a process chamber 1, in which a substrate 2, z.
  • a substrate 2 As a silicon substrate, which is to be subjected to a temperature treatment.
  • the process chamber 1 may be, for example, a vacuum chamber and made of quartz, so that heat radiation can penetrate from the outside in this.
  • lamps 3 are arranged outside the process chamber 1, with only one lamp 3 being shown below the process chamber 1 for the sake of better clarity, representative of a large number of lamps. It is understood that additional lamps can also be arranged above the process chamber 1 or also laterally. Such lamps 3 may be infrared radiators or halogen lamps.
  • reflectors 4 are arranged above and below the process chamber, which can alternatively completely surround the process chamber 1.
  • the process chamber 1 can have a round or polygonal cross section.
  • the process chamber 1 is closed on the right-hand side with a cover 5 made of quartz and provided on the opposite side with a loading and unloading device 6 for substrates 2.
  • the lid 5 may also be made of another suitable material, such as stainless steel.
  • FIG. 1 furthermore shows the schematic profile of the lamp radiation 7 emanating from the lamp 3, which is reflected on the wall of the process chamber 1, the substrate 2 and also on the reflector 4 and is absorbed directly and / or as reflected radiation by the substrate 2 becomes. Finally, part of the long-wave lamp radiation 7 penetrates the substrate 2 as a transmission 8 and is at least partially reflected by the reflector 4 in the process chamber 1 again.
  • the substrate 2 is heated to the desired temperature by the lamp radiation 7 and the reflected radiation and, as a consequence, generates its own emission 9, which emerges perpendicularly from the respective surface of the substrate 2.
  • a quartz tube 10 is flange-mounted on the wall of the process chamber 1 in such a vacuum-tight manner that its longitudinal axis is directed perpendicularly through the wall of the process chamber 1 onto a flat side of the substrate 2, preferably on the underside thereof.
  • the quartz tube 10 is vacuum-tight welded to the wall of the process chamber 1 or otherwise secured.
  • the quartz tube 10 At the other end of the quartz tube 10 there is a radiation measuring device 11 (for example a pyrometer) for detecting the emission 9 emanating from the substrate 2 and conducted through the quartz tube 10.
  • the measurement of the emission should take place in a long-wave infrared range which is not or is not is negligibly influenced by the lamp radiation 7.
  • the measuring range 12 extends from 8-14 ⁇ m, with a range from 8-9.5 ⁇ m being preferred. In this area, sufficient radiation is emitted by silicon or the substrate in all temperature ranges for a reliable temperature measurement (absorption of free charge carriers).
  • a window 13 made of calcium fluoride (CaF), barium fluoride (BaF) or germanium (Ge) is inserted into the quartz tube 10 in a vacuum-tight manner immediately before the radiation measuring device 11.
  • the window 13 of calcium fluoride has a very high transmittance of about 90% - 95% in the range of the wavelengths to be measured.
  • the radiation versus temperature curve of silicon is determined ( Figure 2) and then stored as a mathematical function in the controller / transducer 14 ( Figure 1). This is also possible with substrates 2 made of glass or graphite.
  • the controller / transducer 14 is finally connected to a temperature indicator 15.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

L'invention concerne un procédé de thermométrie sans contact des substrats dans une chambre de traitement chauffée par rayonnement, en particulier des substrats de verre, de silicium ou de graphite dans une plage de températures allant de 20°C à 1300°C, ainsi qu'un dispositif d'exécution du procédé. La tâche de l'invention consiste désormais à créer un procédé et un dispositif de thermométrie sans contact des substrats dans les fours chauffés par rayonnement, avec lequel une thermométrie constante sans contact est permise dans une plage allant de 20°C à 1300°C, une commutation devant être évitée entre différents capteurs. Ceci est atteint par le fait qu'une partie de l'émission (9) émanant du substrat (2) est découplée dans une plage infrarouge de grande longueur d'onde dans une plage de mesure (12) en dehors de la plage de longueurs d'ondes de l'émission émanant d'une source de rayonnement via un filtre à partir de la chambre de traitement et est transmise à un instrument de thermométrie.
EP07712383A 2006-04-12 2007-02-28 Procédé et dispositif de thermométrie sans contact Ceased EP2005129A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006017655.3A DE102006017655B4 (de) 2006-04-12 2006-04-12 Verfahren zur berührungslosen Temperaturmessung
PCT/EP2007/051895 WO2007118730A1 (fr) 2006-04-12 2007-02-28 Procédé et dispositif de thermométrie sans contact

Publications (1)

Publication Number Publication Date
EP2005129A1 true EP2005129A1 (fr) 2008-12-24

Family

ID=38066573

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07712383A Ceased EP2005129A1 (fr) 2006-04-12 2007-02-28 Procédé et dispositif de thermométrie sans contact

Country Status (3)

Country Link
EP (1) EP2005129A1 (fr)
DE (1) DE102006017655B4 (fr)
WO (1) WO2007118730A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009010086B4 (de) * 2009-01-29 2013-04-11 Centrotherm Sitec Gmbh Anordnung und Verfahren zur Messung der Temperatur und des Dickenwachstums von Siliziumstäben in einem Silizium-Abscheidereaktor
KR102527612B1 (ko) * 2018-08-22 2023-05-02 매슨 테크놀로지 인크 저온에서의 워크피스의 열처리 및 온도 측정을 위한 시스템 및 방법
GB2582786B (en) * 2019-04-02 2022-02-23 Impression Tech Limited A non-contact temperature sensor
DE102023200595A1 (de) * 2023-01-25 2024-07-25 Hq-Dielectrics Gmbh Verfahren und Pyrometer zum Messen der Temperatur eines Halbleitersubstrats

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2627254C3 (de) * 1976-06-18 1981-08-13 Bodenseewerk Perkin-Elmer & Co GmbH, 7770 Überlingen Verfahren zur Messung oder Regelung der Temperatur eines Graphitrohres
DE4012615A1 (de) * 1990-04-20 1991-10-24 T Elektronik Gmbh As Kombinierte beruehrungslose temperaturmessmethode in der halbleiterprozesstechnik
US5738440A (en) * 1994-12-23 1998-04-14 International Business Machines Corp. Combined emissivity and radiance measurement for the determination of the temperature of a radiant object
US6563092B1 (en) * 2001-11-28 2003-05-13 Novellus Systems, Inc. Measurement of substrate temperature in a process chamber using non-contact filtered infrared pyrometry
DE10329205A1 (de) * 2003-06-28 2005-01-27 Infineon Technologies Ag Verfahren und Vorrichtung zum berührungslosen Bestimmen der Oberflächentemperatur eines Halbleiterwafers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2007118730A1 *

Also Published As

Publication number Publication date
WO2007118730A1 (fr) 2007-10-25
DE102006017655A1 (de) 2007-10-18
DE102006017655B4 (de) 2015-02-12

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