EP2012372A4 - METHOD FOR MANUFACTURING SEMICONDUCTOR ELECTROLUMINESCENT ELEMENT AND GALLIUM NITRIDE COMPOUND, SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND GALLIUM NITRIDE COMPOUND, AND LAMP - Google Patents

METHOD FOR MANUFACTURING SEMICONDUCTOR ELECTROLUMINESCENT ELEMENT AND GALLIUM NITRIDE COMPOUND, SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND GALLIUM NITRIDE COMPOUND, AND LAMP

Info

Publication number
EP2012372A4
EP2012372A4 EP07742162.6A EP07742162A EP2012372A4 EP 2012372 A4 EP2012372 A4 EP 2012372A4 EP 07742162 A EP07742162 A EP 07742162A EP 2012372 A4 EP2012372 A4 EP 2012372A4
Authority
EP
European Patent Office
Prior art keywords
gallium nitride
nitride compound
lamp
light emitting
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP07742162.6A
Other languages
German (de)
French (fr)
Other versions
EP2012372A1 (en
EP2012372B1 (en
Inventor
Naoki Fukunaga
Hiroshi Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of EP2012372A1 publication Critical patent/EP2012372A1/en
Publication of EP2012372A4 publication Critical patent/EP2012372A4/en
Application granted granted Critical
Publication of EP2012372B1 publication Critical patent/EP2012372B1/en
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C23C14/5813—Thermal treatment using lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thermal Sciences (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
EP07742162.6A 2006-04-24 2007-04-23 Method for manufacturing gallium nitride compound semiconductor light emitting element Not-in-force EP2012372B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006119207A JP5068475B2 (en) 2006-04-24 2006-04-24 Method for manufacturing gallium nitride compound semiconductor light emitting device, gallium nitride compound semiconductor light emitting device, and lamp
PCT/JP2007/058727 WO2007125860A1 (en) 2006-04-24 2007-04-23 Method for manufacturing gallium nitride compound semiconductor light emitting element, gallium nitride compound semiconductor light emitting element and lamp

Publications (3)

Publication Number Publication Date
EP2012372A1 EP2012372A1 (en) 2009-01-07
EP2012372A4 true EP2012372A4 (en) 2014-05-21
EP2012372B1 EP2012372B1 (en) 2019-01-16

Family

ID=38655384

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07742162.6A Not-in-force EP2012372B1 (en) 2006-04-24 2007-04-23 Method for manufacturing gallium nitride compound semiconductor light emitting element

Country Status (7)

Country Link
US (2) US8207003B2 (en)
EP (1) EP2012372B1 (en)
JP (1) JP5068475B2 (en)
KR (1) KR101081691B1 (en)
CN (1) CN101427390B (en)
TW (1) TW200812112A (en)
WO (1) WO2007125860A1 (en)

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KR100735488B1 (en) * 2006-02-03 2007-07-04 삼성전기주식회사 Method of manufacturing gallium nitride-based light emitting diode device
JPWO2009072365A1 (en) * 2007-12-07 2011-04-21 出光興産株式会社 Amorphous transparent conductive film for gallium nitride compound semiconductor light emitting device
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
JP5200608B2 (en) * 2008-03-24 2013-06-05 ソニー株式会社 Semiconductor light emitting device and manufacturing method thereof
KR20090106299A (en) 2008-04-05 2009-10-08 송준오 Group III-nitride semiconductor light emitting diode device having an ohmic contact light extracting structure layer and a method of manufacturing the same
DE102009033417C5 (en) * 2009-04-09 2022-10-06 Interpane Entwicklungs-Und Beratungsgesellschaft Mbh Process and plant for the production of a coated object by means of annealing
KR20100115193A (en) * 2009-04-17 2010-10-27 엘지디스플레이 주식회사 Method of fabricating the same
JP2011009502A (en) * 2009-06-26 2011-01-13 Showa Denko Kk Light emitting element and method of manufacturing the same, lamp, electronic apparatus, and mechanical apparatus
GB0915376D0 (en) * 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
JP5326957B2 (en) * 2009-09-15 2013-10-30 豊田合成株式会社 Light emitting device manufacturing method and light emitting device
US8592309B2 (en) * 2009-11-06 2013-11-26 Ultratech, Inc. Laser spike annealing for GaN LEDs
US8658451B2 (en) 2009-11-06 2014-02-25 Ultratech, Inc. Activating GaN LEDs by laser spike annealing and flash annealing
KR101091504B1 (en) * 2010-02-12 2011-12-08 엘지이노텍 주식회사 Light emitting device, light emitting device package and fabrication method thereof
TWI491066B (en) * 2010-06-07 2015-07-01 Hon Hai Prec Ind Co Ltd Light-emitting diode and manufacturing method thereof
CN102280551B (en) * 2010-06-08 2015-08-05 鸿富锦精密工业（深圳）有限公司 Light-emitting diode and manufacture method thereof
US20120000519A1 (en) * 2010-07-01 2012-01-05 Primestar Solar Transparent electrically conductive layer and method for forming same
JP4960511B1 (en) * 2011-01-26 2012-06-27 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
KR20140142856A (en) * 2013-06-05 2014-12-15 삼성디스플레이 주식회사 Laser apparatus and method of crystallizing
CN104332532A (en) * 2013-07-22 2015-02-04 北方工业大学 Method for manufacturing high-luminous-efficiency light-emitting diode
JP5705950B2 (en) * 2013-11-18 2015-04-22 株式会社東芝 Semiconductor light emitting device
CN114284403B (en) * 2021-12-28 2025-01-21 中国科学院半导体研究所 LED preparation method and LED epitaxial wafer

Citations (1)

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US20050212002A1 (en) * 2004-03-29 2005-09-29 Daisuke Sanga Semiconductor light emitting device

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JPS60175314A (en) * 1984-02-22 1985-09-09 日立マクセル株式会社 Method of annealing transparent conductive film
JPH0731951B2 (en) * 1986-03-03 1995-04-10 凸版印刷株式会社 Method for manufacturing transparent electrode substrate
JP3009095B2 (en) 1995-10-27 2000-02-14 日亜化学工業株式会社 Nitride semiconductor light emitting device
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JPH10199346A (en) * 1997-01-17 1998-07-31 Japan Steel Works Ltd:The Method and apparatus for forming transparent electrode
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JP3600207B2 (en) * 2001-12-10 2004-12-15 日東電工株式会社 Method for selectively etching metal oxide film, metal oxide film selectively etched by the method, optical element, and conductive film
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See also references of WO2007125860A1 *

Also Published As

Publication number Publication date
EP2012372A1 (en) 2009-01-07
KR20080108559A (en) 2008-12-15
CN101427390B (en) 2016-02-03
JP2007294578A (en) 2007-11-08
EP2012372B1 (en) 2019-01-16
TW200812112A (en) 2008-03-01
WO2007125860A1 (en) 2007-11-08
US20120228665A1 (en) 2012-09-13
US8207003B2 (en) 2012-06-26
KR101081691B1 (en) 2011-11-09
JP5068475B2 (en) 2012-11-07
US20090090922A1 (en) 2009-04-09
CN101427390A (en) 2009-05-06

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