EP2033237A4 - Dispositif à del avec construction semi-conductrice réémettrice et réflecteur - Google Patents

Dispositif à del avec construction semi-conductrice réémettrice et réflecteur

Info

Publication number
EP2033237A4
EP2033237A4 EP07798368.2A EP07798368A EP2033237A4 EP 2033237 A4 EP2033237 A4 EP 2033237A4 EP 07798368 A EP07798368 A EP 07798368A EP 2033237 A4 EP2033237 A4 EP 2033237A4
Authority
EP
European Patent Office
Prior art keywords
reflector
led device
semiconductor construction
transmit semiconductor
transmit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07798368.2A
Other languages
German (de)
English (en)
Other versions
EP2033237A1 (fr
Inventor
Michael A Haase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of EP2033237A1 publication Critical patent/EP2033237A1/fr
Publication of EP2033237A4 publication Critical patent/EP2033237A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
EP07798368.2A 2006-06-12 2007-06-11 Dispositif à del avec construction semi-conductrice réémettrice et réflecteur Withdrawn EP2033237A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80453806P 2006-06-12 2006-06-12
PCT/US2007/070853 WO2007146863A1 (fr) 2006-06-12 2007-06-11 Dispositif à del avec construction semi-conductrice réémettrice et réflecteur

Publications (2)

Publication Number Publication Date
EP2033237A1 EP2033237A1 (fr) 2009-03-11
EP2033237A4 true EP2033237A4 (fr) 2013-10-02

Family

ID=38832113

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07798368.2A Withdrawn EP2033237A4 (fr) 2006-06-12 2007-06-11 Dispositif à del avec construction semi-conductrice réémettrice et réflecteur

Country Status (6)

Country Link
EP (1) EP2033237A4 (fr)
JP (1) JP2009540617A (fr)
KR (1) KR20090018627A (fr)
CN (1) CN101467273B (fr)
TW (1) TW200810156A (fr)
WO (1) WO2007146863A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008012316B4 (de) 2007-09-28 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlichtquelle mit einer Primärstrahlungsquelle und einem Lumineszenzkonversionselement
JP5519000B2 (ja) 2009-04-30 2014-06-11 ゼルティック エステティックス インコーポレイテッド 脂肪が豊富な皮下細胞から熱を除去するためのデバイス、システム、及び方法
DE102013212372A1 (de) * 2013-06-27 2014-12-31 Robert Bosch Gmbh Optische Baueinheit
CN105865668B (zh) * 2015-01-20 2019-12-10 北京纳米能源与系统研究所 压力传感成像阵列、设备及其制作方法
WO2021066050A1 (fr) * 2019-10-02 2021-04-08 富士フイルム株式会社 Dispositif de rétroéclairage et d'affichage à cristaux liquides
JP2024044397A (ja) * 2022-09-21 2024-04-02 株式会社トプコン 植物センサ
JP2024044396A (ja) * 2022-09-21 2024-04-02 株式会社トプコン 植物センサ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091707A (ja) * 1998-09-09 2000-03-31 Nec Corp 半導体装置及びその製造方法
US20040144987A1 (en) * 2003-01-27 2004-07-29 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
US20050276301A1 (en) * 2004-06-14 2005-12-15 Spinelli Luis A InGaN diode-laser pumped II-VI semiconductor lasers
US20060054905A1 (en) * 2004-09-10 2006-03-16 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3559446B2 (ja) * 1998-03-23 2004-09-02 株式会社東芝 半導体発光素子および半導体発光装置
US6853012B2 (en) * 2002-10-21 2005-02-08 Uni Light Technology Inc. AlGaInP light emitting diode
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091707A (ja) * 1998-09-09 2000-03-31 Nec Corp 半導体装置及びその製造方法
US20040144987A1 (en) * 2003-01-27 2004-07-29 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
US20050276301A1 (en) * 2004-06-14 2005-12-15 Spinelli Luis A InGaN diode-laser pumped II-VI semiconductor lasers
US20060054905A1 (en) * 2004-09-10 2006-03-16 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes

Also Published As

Publication number Publication date
WO2007146863A1 (fr) 2007-12-21
EP2033237A1 (fr) 2009-03-11
JP2009540617A (ja) 2009-11-19
CN101467273B (zh) 2012-05-09
KR20090018627A (ko) 2009-02-20
CN101467273A (zh) 2009-06-24
TW200810156A (en) 2008-02-16

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