EP2065945A2 - Interface optique entre deux sections d'une puce intégrée - Google Patents

Interface optique entre deux sections d'une puce intégrée Download PDF

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Publication number
EP2065945A2
EP2065945A2 EP08169811A EP08169811A EP2065945A2 EP 2065945 A2 EP2065945 A2 EP 2065945A2 EP 08169811 A EP08169811 A EP 08169811A EP 08169811 A EP08169811 A EP 08169811A EP 2065945 A2 EP2065945 A2 EP 2065945A2
Authority
EP
European Patent Office
Prior art keywords
optical
section
substrate
circuit
optical transmitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08169811A
Other languages
German (de)
English (en)
Other versions
EP2065945A3 (fr
Inventor
Gregg T. Juett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Exelis Inc
Original Assignee
ITT Manufacturing Enterprises LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ITT Manufacturing Enterprises LLC filed Critical ITT Manufacturing Enterprises LLC
Publication of EP2065945A2 publication Critical patent/EP2065945A2/fr
Publication of EP2065945A3 publication Critical patent/EP2065945A3/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/801—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections
    • H04B10/802—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections for isolation, e.g. using optocouplers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto

Definitions

  • the present invention concerns the use of optical interfaces between sections of an integrated electronic chip.
  • the present invention allows for the production of integrated chips that include multiple electrically isolated sections.
  • the present invention uses a new approach to isolate multiple sections of a single integrated chip.
  • An exemplary embodiment of the present invention is an integrated electronic chip including: a first section formed on a first substrate; a second section formed on a second substrate; and a chip package.
  • the first section including a first electronic circuit electrically coupled to a first optical transmitter and a first optical receiver.
  • the second section including a second electronic circuit electrically coupled to a second optical transmitter and a second optical receiver.
  • the chip package configured to hold the first and second sections such that the first substrate is separated from the second substrate by a gap having a predetermined width; first optical signals emitted by the first optical transmitter are received by the second optical receiver; and second optical signals emitted by the second optical transmitter are received by the first optical receiver.
  • the first circuit is electrically isolated from the second circuit by the gap.
  • Exemplary embodiments of the present invention include use of optical transmitters and receivers to relay data between circuits formed on separated substrates that have been mounted within a chip package so as to provide electrical isolation between the separate circuits.
  • Fig. 1 illustrates one exemplary configuration of an integrated electronic chip according to the present invention that includes two physically separated sections within the chip package that are optically coupled, but not electrically coupled.
  • This exemplary integrated electronic chip includes: substantially insulating base 100; first section 102 and second section 104, which are both mounted on substantially insulating base 100; substantially optically transmissive spacers 114, which are sandwiched between sections 102 and 104 in gap 113; and electrodes 116, which are each electrically coupled to one of sections 102 or 104.
  • Substantially insulating base 100 may be formed of any substantially insulating material including, but not limited to, plastics, ceramics, intrinsic semiconductors, glasses, and other dielectrics.
  • the substrates of sections 102 and 104 of the integrated electronic chip may be mounted to substantially insulating base 100 using any standard technique used in the electronics industry. For example epoxies, solders, thermoplastics and elastomers may be used.
  • substantially insulating base 100 may be designed such that sections 102 and/or 104 may be press-fit into depressions in the base or held by clamps (not shown).
  • substantially insulating base 100 may be only one portion of the package of an exemplary integrated electronic chip according to the present invention.
  • the chip package may also include a cover and/or potting material to encapsulate the exemplary integrated electronic chip.
  • Sections 102 and 104 may include any electronic circuits formed on a substrate, such as: radio frequency (RF) circuits; RF detection circuits; microwave circuits; microwave detection circuits; digital baseband circuits; logic circuits; and signal processing circuits. Also formed on the substrate of each section of an exemplary integrated electronic chip according to the present invention are an optical transmitter and an optical receiver. The optical transmitter and optical receiver are electrically coupled to the corresponding electronic circuit.
  • RF radio frequency
  • section 102 includes optical transmitter 106 and optical receiver 110
  • section 104 includes optical transmitter 112 and optical receiver 108
  • Optical transmitter 106 of section 102 is aligned so that optical signals generated in the transmitter is transmitted across gap 113 through one of the substantially optically transmissive spacers 114 and is incident on optical receiver 108 of section 104
  • Optical transmitter 112 of section 104 is aligned so that optical signals generated in this transmitter is transmitted across gap 113 through the other substantially optically transmissive spacer 114 and is incident on optical receiver 110 of section 102.
  • the optical receivers generate electric signals based on the received optical signals.
  • optical transmitters and optical receivers allow data to be transferred between the electronic circuits in sections 102 and 104, without directly electrically coupling of the circuits.
  • the width of gap 113 may be selected such that any anticipated inductive coupling between the electronic circuits of sections 102 and 104 is reduced below a desired threshold level.
  • the electronic circuits of sections 102 and 104 may be electrically isolated sufficiently to reduce undesired electrical crosstalk between these electronic circuits, while still allowing desired data to be passed between the electronic circuits.
  • Optical transmitters 106 and 112 may include a self-modulated semiconductor optical source, such as an electroluminescent (EL) element; a light emitting diode (LED); and an edge emitting semiconductor laser, with associated modulation and drive circuitry.
  • a self-modulated semiconductor optical source such as an electroluminescent (EL) element; a light emitting diode (LED); and an edge emitting semiconductor laser, with associated modulation and drive circuitry.
  • optical transmitters 106 and 112 may include a self-modulated semiconductor optical source, which is operated in a continuous wave (CW) mode, and a separate optical modulator, as well as associated modulation and drive circuitry.
  • These optical transmitters may also include optical elements to direct and/or focus their generated optical signals toward the corresponding optical receivers. These optical transmitters may operate in any wavelength band; however, standard near infrared or visible optical communication bands may be most common.
  • Optical receivers 108 and 110 may include any type of semiconductor optical sensors, such as photoresistive sensors, photodiodes, and phototransistors. Optical receivers 108 and 110 also include associate circuitry and may include optical elements to improve coupling of the optical signals from the corresponding optical transmitters into optical sensors and/or reduce coupling of stray light from other sources, including that of the other optical transmitter(s), into the optical sensor.
  • optical transmitter/receiver pairs are located as far apart as practical.
  • the optical transmitters and/or the optical receivers may also include optical elements to assist in coupling light between the optical transmitter and its corresponding optical receiver. These optical elements may also significantly reduce potential crosstalk between the optical transmitter/receiver pairs.
  • surfaces of the sections, other than the optical receivers, and/or chip package on which the optical signals may be incident may be formed of or coated with material selected to substantially absorb, or at least reduce reflections of the optical signals.
  • FIG. 1A Another approach to reducing potential optical crosstalk is also illustrated in Fig. 1A .
  • This exemplary integrated electronic chip is configured such that the optical signals of each optical transmitter/receiver pair are transmitted through a separate substantially optically transmissive spacer 114.
  • These separate substantially optically transmissive spacers may function to at least partially guide the optical signals from the optical transmitter to the corresponding optical receiver, thereby reducing the amount of stray light within the chip package.
  • optical transmitter/receiver pairs may be adapted to operate in different wavelength bands.
  • optical transmitter 106 may generate light having a first peak wavelength and optical transmitter 112 may generate light having a second peak wavelength, which is different from the first peak wavelength.
  • Optical receiver 108 may be adapted to be more sensitive to the first peak wavelength, i.e. the optical signals of optical transmitter 106, than to the second peak wavelength.
  • Optical receiver 110 may be adapted to be more sensitive to the second peak wavelength, i.e. the optical signals of optical transmitter 112, than to the first peak wavelength.
  • optical receiver 108 preferentially receives the first optical signal and optical receiver 110 preferentially receives the second optical signal.
  • These wavelength band differences may be implemented during fabrication of the optical sources and/or optical sensors or may be implemented by including wavelength selective optical elements, such as filters or gratings, in the optical transmitters, optical receivers, and/or the substantially optically transmissive spacers.
  • Substantially optically transmissive spacers 114 may be formed of any material that is substantially optically transmissive in the desired wavelength band and substantially electrically insulating. Such materials may include: glasses; plastics; silicon; quartz; alumina; sapphire; epoxies; elastomers; and thermoplastics. Substantially optically transmissive spacers 114 may be formed as a single bulk layer, a multilayer structure, or a laminated structure that is sandwiched between one or more optical transmitter/receiver pairs, when the sections are mounted in the chip package as illustrated in Fig. 1A .
  • a substantially optically transmissive spacer may be formed by flowing a substantially transmissive potting material (such as an epoxy, elastomer, or thermoplastic) between the two sections as part of the chip packaging procedure.
  • a substantially transmissive potting material such as an epoxy, elastomer, or thermoplastic
  • optically transmissive spacers 114 may help reduce optical crosstalk and/or may assist in positioning/holding sections 102 and 104 within the chip package, it is also contemplated, according to the present invention, that these optically transmissive spacers may be omitted from an exemplary integrated electronic chip.
  • Fig. 1B illustrates an alternative exemplary embodiment of the present invention.
  • section 104 is stacked on top of section 102 instead of mounted beside it, as shown in the exemplary embodiment of Fig. 1A .
  • package base 118 does not have to be electrically insulating and instead may be a ground plane for section 102.
  • optical transmitters 106 and 112 may desirably include a vertical cavity surface emitting laser (VCSEL).
  • VCSEL vertical cavity surface emitting laser
  • Spacer 120 separates sections 102 and 104 by gap 122; however, unlike substantially optically transmissive spacers 114 in the exemplary embodiment of Fig. 1A , the optical signals are not transmitted through spacer 120 in the exemplary embodiment of Fig. 1B .
  • Spacer 120 may, therefore, be formed of any substantially electrically insulating material(s), whether substantially optically transmissive or not. It may even be desirable for spacer 120 to be substantially opaque to the wavelength band(s) of optical transmitters 106 and 112 in order to reduce optical crosstalk.
  • Figs. 2 and 3 illustrate two additional exemplary embodiments of the present invention.
  • Two exemplary integrated electronic chips are shown, each including three separate sections 102, 104, and 200 that are electrically isolated, but optically coupled.
  • each section is mounted on substantially electrically insulating base 100 and includes two optical transmitters and two optical receivers.
  • optical transmitter 106 of section 102 is aligned to transmit optical signals across gap 113 to optical receiver 108 of section 104; and optical transmitter 112 of section 104 is aligned to transmit optical signals across gap 113 to optical receiver 110 of section 102.
  • Optical transmitter 202 of section 102 is aligned to transmit optical signals across gap 218 to optical receiver 204 of section 200.
  • Optical transmitter 210 of section 104 is aligned to transmit optical signals across gap 218 to optical receiver 212 of section 200.
  • Optical transmitters 208 and 216 of section 200 are aligned to transmit optical signals across gap 218 to optical receivers 206 of section 102 and 214 of section 104, respectively.
  • each section is capable of directly exchanging data optically with both of the other sections.
  • exemplary embodiment illustrated in Fig. 2 does not include any spacers between the sections; however, one skilled in the art will understand that one or more spacers, such as those illustrated in Figs. 1A and 1B may be added in gaps 113 and/or 218 of this exemplary embodiment.
  • Fig. 3 illustrates three sections 102, 104, and 200 in an exemplary stacked configuration.
  • optical transmitter 106 of section 102 is aligned to transmit optical signals across gap 122 to optical receiver 108 of section 104;
  • optical transmitter 112 of section 104 is aligned to transmit optical signals across gap 122 to optical receiver 110 of section 102;
  • optical transmitter 302 of section 104 is aligned to transmit optical signals across gap 312 to optical receiver 304 of section 200;
  • optical transmitter 308 of section 200 is aligned to transmit optical signals across gap 312 to optical receiver 306 of section 104.
  • section 104 is capable of directly exchanging optical data with both sections 102 and 200; however, sections 102 and 200 are not capable of directly exchanging optical data.
  • chip base 118 is directly connected only to section 102 and, thus, it is not necessary for chip base 118 to be electrically insulating.
  • the chip package of Fig. 3 also includes substantially optically transmissive spacers 310 in both gap 122 between section 102 and section 104 and in gap 312 between sections 104 and 200.
  • the present invention includes a number of exemplary embodiments of integrated electronic chips, having multiple electrically isolated circuits formed in separate sections.
  • the invention is illustrated and described herein with reference to specific embodiments, it is not intended to be limited to the details shown. Rather, various modifications may be made in the details within the scope and range of equivalents of the claims and without departing from the invention.
  • one skilled in the art may understand that many features of the various specifically illustrated embodiments may be mixed to form additional exemplary integrate electronic chips also embodied by the present invention.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
EP08169811A 2007-11-30 2008-11-24 Interface optique entre deux sections d'une puce intégrée Withdrawn EP2065945A3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/948,451 US20090142072A1 (en) 2007-11-30 2007-11-30 Optical interface between two sections of an integrated chip

Publications (2)

Publication Number Publication Date
EP2065945A2 true EP2065945A2 (fr) 2009-06-03
EP2065945A3 EP2065945A3 (fr) 2009-06-17

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EP08169811A Withdrawn EP2065945A3 (fr) 2007-11-30 2008-11-24 Interface optique entre deux sections d'une puce intégrée

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US (1) US20090142072A1 (fr)
EP (1) EP2065945A3 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014005509A1 (fr) * 2012-07-02 2014-01-09 华为技术有限公司 Procédés et dispositifs d'émission et de réception de données

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150132008A1 (en) * 2013-11-11 2015-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Via-less multi-layer integrated circuit with inter-layer interconnection

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438210A (en) * 1993-10-22 1995-08-01 Worley; Eugene R. Optical isolation connections using integrated circuit techniques
US5753929A (en) * 1996-08-28 1998-05-19 Motorola, Inc. Multi-directional optocoupler and method of manufacture
US6393183B1 (en) * 1998-08-13 2002-05-21 Eugene Robert Worley Opto-coupler device for packaging optically coupled integrated circuits
AU2119301A (en) * 1999-10-22 2001-05-08 Teraconnect, Inc. Wafer scale integration and remoted subsystems using opto-electronic transceivers
US20020181827A1 (en) * 2001-06-01 2002-12-05 Motorola, Inc. Optically-communicating integrated circuits
EP1609011B1 (fr) * 2003-04-02 2019-03-13 Oracle America, Inc. Communication optique entre des puces a semi-conducteur face a face
JP2004363185A (ja) * 2003-06-02 2004-12-24 Stanley Electric Co Ltd 光通信用モジュール
US7113761B2 (en) * 2003-10-07 2006-09-26 Motorola, Inc. RF power device with on-chip digital control and optical interface
US8000607B2 (en) * 2005-01-25 2011-08-16 Finisar Corporation Optical transceivers with closed-loop digital diagnostics
US7805080B2 (en) * 2007-06-22 2010-09-28 Hewlett-Packard Development Company, L.P. Optical interconnect

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014005509A1 (fr) * 2012-07-02 2014-01-09 华为技术有限公司 Procédés et dispositifs d'émission et de réception de données

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Publication number Publication date
US20090142072A1 (en) 2009-06-04
EP2065945A3 (fr) 2009-06-17

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