EP2067253B1 - Verstärkerarchitektur für polarmodulationen - Google Patents

Verstärkerarchitektur für polarmodulationen Download PDF

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Publication number
EP2067253B1
EP2067253B1 EP07826335A EP07826335A EP2067253B1 EP 2067253 B1 EP2067253 B1 EP 2067253B1 EP 07826335 A EP07826335 A EP 07826335A EP 07826335 A EP07826335 A EP 07826335A EP 2067253 B1 EP2067253 B1 EP 2067253B1
Authority
EP
European Patent Office
Prior art keywords
signal
amplifier
amplitude
modulating
radio frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP07826335A
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English (en)
French (fr)
Other versions
EP2067253A2 (de
Inventor
Antonius J.M. De Graauw
Leon C.M. Van Den Oever
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
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NXP BV
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Publication date
Application filed by NXP BV filed Critical NXP BV
Priority to EP07826335A priority Critical patent/EP2067253B1/de
Publication of EP2067253A2 publication Critical patent/EP2067253A2/de
Application granted granted Critical
Publication of EP2067253B1 publication Critical patent/EP2067253B1/de
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00—Modulated-carrier systems
    • H04L27/32—Carrier systems characterised by combinations of two or more of the types covered by groups H04L27/02, H04L27/10, H04L27/18 or H04L27/26
    • H04L27/34—Amplitude- and phase-modulated carrier systems, e.g. quadrature-amplitude modulated carrier systems
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00—Modulated-carrier systems
    • H04L27/32—Carrier systems characterised by combinations of two or more of the types covered by groups H04L27/02, H04L27/10, H04L27/18 or H04L27/26
    • H04L27/34—Amplitude- and phase-modulated carrier systems, e.g. quadrature-amplitude modulated carrier systems
    • H04L27/36—Modulator circuits; Transmitter circuits
    • H04L27/361—Modulation using a single or unspecified number of carriers, e.g. with separate stages of phase and amplitude modulation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/324—An amplitude modulator or demodulator being used in the amplifier circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/381—An active variable resistor, e.g. controlled transistor, being coupled in the output circuit of an amplifier to control the output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/417—A switch coupled in the output circuit of an amplifier being controlled by a circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier

Definitions

  • AM2AM quantifies the relationship between the baseband envelope signal and the envelope of the radio frequency output signal.
  • the deviation of the two envelope signals is due to distortion in the amplitude modulation process for example caused by a non-linear relationship between the collector (or drain) voltage and the envelope of the radio frequency output signal.
  • the electronic device includes a modulated attenuator for attenuating the output signal of the amplifier in response to a second modulating signal.
  • the second modulated signal is used to control the amplifier for smaller amplitudes below the predetermined value.
  • This aspect of the present invention relates to a preferred implementation, where the attenuation is realized in a separate modulated attenuator. This attenuator is implemented independently from the amplifier.
  • the modulated attenuator can include a PIN-diode, which is coupled to the output of the amplifier. The PIN-diode is driven by the second modulating signal and provides the necessary attenuation.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Amplitude Modulation (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Claims (7)

  1. Elektronische Vorrichtung zur leistungseffizienten linearen Verstärkung eines Hochfrequenz-Eingangssignals (RFin), die einen Verstärker (RF-PA) zum Verstärken eines phasenmodulierten Signals (PM) umfasst, wobei das phasenmodulierte Signal (PM) die Phaseninformation des Hochfrequenz-Eingangssignals (RFin) umfasst, wobei der Verstärker (RF-PA) so ausgeführt ist, dass er durch ein erstes modulierendes Signal (AM_high) zum Modulieren der Amplitude des phasenmodulierten Signals (PM) gesteuert wird, um ein Ausgangssignal des Verstärkers (RF-PA) bei Amplitudenwerten oberhalb eines vorgegebenen Amplitudenwertes bereitzustellen; und einen Hüllkurvendetektor (ED) umfasst zum Extrahieren eines Hüllkurvensignals (ES) des Hochfrequenz-Eingangssignals (RFin), wobei das Hüllkurvensignal (ES) die Amplitudeninformation des Hochfrequenz-Eingangssignals (RFin) enthält, dadurch gekennzeichnet, dass die elektronische Vorrichtung so ausgeführt ist, dass sie das Ausgangssignal des Verstärkers (RF-PA) bei dem vorgegebenen Amplitudenwert hält und das Ausgangssignal des Verstärkers (RF-PA) in Reaktion auf ein zweites modulierendes Signal (AM_low) dämpft, um Amplituden unterhalb des vorgegebenen Amplitudenwertes nur dann bereitzustellen, wenn das Hüllkurvensignal (ES) unterhalb eines spezifischen Wertes (VL) liegt.
  2. Elektronische Vorrichtung nach Anspruch 1, die ferner ein moduliertes Dämpfungsglied (MA) zum Dämpfen des Ausgangssignals des Verstärkers (RF-PA) in Reaktion auf das zweite modulierende Signal (AM_low) umfasst, wobei das modulierte Dämpfungsglied (MA) eine PIN-Diode (D2) umfasst, die mit dem Ausgang des Verstärkers (RF-PA) gekoppelt ist, wobei die PIN-Diode (D2) ferner so ausgeführt ist, dass sie durch das zweite modulierende Signal (AM_low) angesteuert wird.
  3. Elektronische Vorrichtung nach Anspruch 2, die ferner so ausgeführt ist, dass sie über den gesamten Bereich des ersten amplitudenmodulierenden Signals (AM_high) und des zweiten amplitudenmodulierenden Signals (AM_low) einen kontinuierlich modulierten Amplitudenbereich bereitstellt.
  4. Elektronische Vorrichtung nach Anspruch 1, die ferner einen Begrenzer (LIM) zum Extrahieren des phasenmodulierten Signals (PM) des Hochfrequenz-Eingangssignals (RFin) umfasst.
  5. Elektronische Vorrichtung nach irgendeinem der vorangehenden Ansprüche, die ferner eine Verstärkungsstufe umfasst zum Bereitstellen des ersten modulierenden Signals (AM_high), wobei die elektronische Vorrichtung so angeschlossen ist, dass das erste amplitudenmodulierende Signal (AM_high) auf einem vorgegebenen Amplitudenwert verharrt, wenn das Hüllkurvensignal (ES) unterhalb eines spezifischen Wertes (VL) liegt.
  6. Elektronische Vorrichtung nach Anspruch 1 , die ferner einen Antennenschalter umfasst, wobei der Schalter so ausgeführt ist, dass er vorgespannt und gesteuert wird, um als veränderlicher Widerstand zu wirken, um als ein Dämpfungsglied zum Dämpfen des Ausgangssignals des Verstärkers (RF-PA) verwendet zu werden.
  7. Verfahren zum leistungseffizienten linearen Verstärken eines Hochfrequenz-Eingangssignals (RFin), die Schritte umfassend:
    Extrahieren des Hüllkurvensignals (ES) des Hochfrequenz-Eingangssignals (RFin), wobei das Hüllkurvensignal die Amplitudeninformation des Hochfrequenz-Eingangssignals (RFin) enthält, und
    Steuern eines Verstärkers (RF-PA) mittels eines ersten modulierenden Signals (AM_high) zum Modulieren der Amplitude eines phasenmodulierten Signals (PM), wobei das phasenmodulierte Signal (PM) die Phaseninformation des Hochfrequenz-Eingangssignals (RFin) umfasst, um ein Ausgangssignal des Verstärkers (RF-PA) bei Amplitudenwerten größer als ein vorgegebener Amplitudenwert bereitzustellen, dadurch gekennzeichnet, dass das Verfahren ferner umfasst:
    Halten des Ausgangssignals des Verstärkers (RF-PA) bei dem vorgegebenen Amplitudenwert auf einem konstanten Pegel, und Dämpfen des konstanten Ausgangssignals des Verstärkers (RF-PA) in Reaktion auf ein zweites modulierendes Signal (AM_low), um Amplituden unterhalb des vorgegebenen Amplitudenwertes nur dann bereitzustellen, wenn das Hüllkurvensignal (ES) unter einen spezifischen Wert (VL) fällt.
EP07826335A 2006-09-12 2007-09-10 Verstärkerarchitektur für polarmodulationen Not-in-force EP2067253B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07826335A EP2067253B1 (de) 2006-09-12 2007-09-10 Verstärkerarchitektur für polarmodulationen

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06120519 2006-09-12
PCT/IB2007/053647 WO2008032264A2 (en) 2006-09-12 2007-09-10 Amplifier architecture for polar modulation
EP07826335A EP2067253B1 (de) 2006-09-12 2007-09-10 Verstärkerarchitektur für polarmodulationen

Publications (2)

Publication Number Publication Date
EP2067253A2 EP2067253A2 (de) 2009-06-10
EP2067253B1 true EP2067253B1 (de) 2010-08-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP07826335A Not-in-force EP2067253B1 (de) 2006-09-12 2007-09-10 Verstärkerarchitektur für polarmodulationen

Country Status (6)

Country Link
US (1) US7839213B2 (de)
EP (1) EP2067253B1 (de)
CN (1) CN101512895B (de)
AT (1) ATE476787T1 (de)
DE (1) DE602007008267D1 (de)
WO (1) WO2008032264A2 (de)

Families Citing this family (10)

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JP5613894B2 (ja) * 2008-08-11 2014-10-29 日本電産サンキョー株式会社 非接触ｉｃカードリーダ及びデータ読取方法
EP2372904A4 (de) * 2008-12-25 2012-07-04 Nec Corp Leistungsverstärkungsgerät
FR2948513B1 (fr) * 2009-07-24 2011-09-30 St Microelectronics Sa Procede et dispositif d'amplification de puissance d'un signal radiofrequence
US8948233B2 (en) * 2009-12-15 2015-02-03 Panasonic Intellectual Property Corporation Of America Wireless relaying device, wireless transmission device, and wireless relaying method
US8779860B2 (en) 2012-08-15 2014-07-15 Avago Technologies General Ip (Singapore) Ptd. Ltd. Power amplifier
JP2014072557A (ja) * 2012-09-27 2014-04-21 Sumitomo Electric Ind Ltd 高調波処理回路、及びこれを用いた増幅装置
JP2014183463A (ja) * 2013-03-19 2014-09-29 Fujitsu Ltd 電力増幅器の制御装置及び制御方法
JP5958483B2 (ja) * 2013-07-31 2016-08-02 株式会社村田製作所 電力増幅モジュール
EP3679647B1 (de) * 2017-09-07 2024-02-28 Nokia Solutions and Networks Oy Dreiphasige modulation für effizienten und breitbandigen funksender
CN111614588B (zh) * 2020-05-21 2023-05-30 山东浪潮科学研究院有限公司 一种信号调制方法、装置、设备及计算机可读存储介质

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Also Published As

Publication number Publication date
ATE476787T1 (de) 2010-08-15
CN101512895B (zh) 2012-03-28
US7839213B2 (en) 2010-11-23
WO2008032264A2 (en) 2008-03-20
DE602007008267D1 (de) 2010-09-16
US20100156540A1 (en) 2010-06-24
EP2067253A2 (de) 2009-06-10
CN101512895A (zh) 2009-08-19
WO2008032264A3 (en) 2008-05-22

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