EP2086006A3 - Élément de détection d'onde électromagnétique - Google Patents

Élément de détection d'onde électromagnétique Download PDF

Info

Publication number
EP2086006A3
EP2086006A3 EP20090000872 EP09000872A EP2086006A3 EP 2086006 A3 EP2086006 A3 EP 2086006A3 EP 20090000872 EP20090000872 EP 20090000872 EP 09000872 A EP09000872 A EP 09000872A EP 2086006 A3 EP2086006 A3 EP 2086006A3
Authority
EP
European Patent Office
Prior art keywords
electromagnetic wave
detecting element
semiconductor layer
irradiation surface
wave detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP20090000872
Other languages
German (de)
English (en)
Other versions
EP2086006B1 (fr
EP2086006A2 (fr
Inventor
Yoshihiro Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to EP14154260.5A priority Critical patent/EP2731136B1/fr
Publication of EP2086006A2 publication Critical patent/EP2086006A2/fr
Publication of EP2086006A3 publication Critical patent/EP2086006A3/fr
Application granted granted Critical
Publication of EP2086006B1 publication Critical patent/EP2086006B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
EP09000872.3A 2008-01-29 2009-01-22 Élément de détection d'onde électromagnétique Active EP2086006B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP14154260.5A EP2731136B1 (fr) 2008-01-29 2009-01-22 Élément de détection d'onde électromagnétique

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008017743 2008-01-29
JP2008093858 2008-03-31
JP2008209179A JP5185013B2 (ja) 2008-01-29 2008-08-15 電磁波検出素子

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP14154260.5A Division-Into EP2731136B1 (fr) 2008-01-29 2009-01-22 Élément de détection d'onde électromagnétique
EP14154260.5A Division EP2731136B1 (fr) 2008-01-29 2009-01-22 Élément de détection d'onde électromagnétique

Publications (3)

Publication Number Publication Date
EP2086006A2 EP2086006A2 (fr) 2009-08-05
EP2086006A3 true EP2086006A3 (fr) 2011-08-03
EP2086006B1 EP2086006B1 (fr) 2016-09-07

Family

ID=40626776

Family Applications (2)

Application Number Title Priority Date Filing Date
EP14154260.5A Active EP2731136B1 (fr) 2008-01-29 2009-01-22 Élément de détection d'onde électromagnétique
EP09000872.3A Active EP2086006B1 (fr) 2008-01-29 2009-01-22 Élément de détection d'onde électromagnétique

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP14154260.5A Active EP2731136B1 (fr) 2008-01-29 2009-01-22 Élément de détection d'onde électromagnétique

Country Status (5)

Country Link
US (2) US8174087B2 (fr)
EP (2) EP2731136B1 (fr)
JP (1) JP5185013B2 (fr)
CN (2) CN102629618B (fr)
TW (2) TWI404197B (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5439984B2 (ja) * 2009-07-03 2014-03-12 ソニー株式会社 光電変換装置および放射線撮像装置
TWI424574B (zh) * 2009-07-28 2014-01-21 Prime View Int Co Ltd 數位ｘ光探測面板及其製作方法
JP5537135B2 (ja) * 2009-11-30 2014-07-02 三菱電機株式会社 光電変換装置の製造方法
US7902512B1 (en) * 2009-12-04 2011-03-08 Carestream Health, Inc. Coplanar high fill factor pixel architecture
KR101084265B1 (ko) * 2009-12-18 2011-11-17 삼성모바일디스플레이주식회사 엑스레이 검출기
JP5583452B2 (ja) * 2010-03-31 2014-09-03 富士フイルム株式会社 電磁波情報検出装置および電磁波情報検出方法
KR101736321B1 (ko) 2010-12-22 2017-05-17 삼성디스플레이 주식회사 엑스레이 검출기용 박막 트랜지스터 어레이 기판 및 엑스레이 검출기
JP5709709B2 (ja) * 2011-05-31 2015-04-30 キヤノン株式会社 検出装置の製造方法、その検出装置及び検出システム
JP6095276B2 (ja) * 2011-05-31 2017-03-15 キヤノン株式会社 検出装置の製造方法、その検出装置及び検出システム
US9515118B2 (en) 2012-01-30 2016-12-06 Rayence Co., Ltd. Radiation detecting panel
WO2013115841A1 (fr) 2012-01-30 2013-08-08 Jun Seung Ik Panneau de détection d'un rayonnement
JP2013235935A (ja) * 2012-05-08 2013-11-21 Canon Inc 検出装置の製造方法、その検出装置及び検出システム
JPWO2013180076A1 (ja) 2012-05-30 2016-01-21 富士フイルム株式会社 放射線画像撮影装置、放射線画像撮影システム、放射線画像撮影装置の制御方法、及び放射線画像撮影装置の制御プログラム
KR101965259B1 (ko) * 2012-07-27 2019-08-08 삼성디스플레이 주식회사 엑스선 검출기
CN102856441B (zh) * 2012-09-14 2015-03-11 京东方科技集团股份有限公司 X射线探测器背板的制造方法及pin光电二极管的制造方法
JP5709810B2 (ja) 2012-10-02 2015-04-30 キヤノン株式会社 検出装置の製造方法、その検出装置及び検出システム
JP2014110352A (ja) * 2012-12-03 2014-06-12 Canon Inc 検出装置の製造方法
JP6389685B2 (ja) * 2014-07-30 2018-09-12 キヤノン株式会社 撮像装置、および、撮像システム
WO2016167179A1 (fr) * 2015-04-13 2016-10-20 シャープ株式会社 Panneau d'imagerie et dispositif d'imagerie par rayons x équipé de celui-ci
US20190115385A1 (en) * 2016-04-01 2019-04-18 Sharp Kabushiki Kaisha Photoelectric converter and x-ray detector
JP2019110159A (ja) * 2017-12-15 2019-07-04 シャープ株式会社 アクティブマトリクス基板、及びそれを備えたｘ線撮像パネル
US11024664B2 (en) * 2018-07-30 2021-06-01 Sharp Kabushiki Kaisha Imaging panel
KR102608581B1 (ko) * 2018-10-18 2023-11-30 엘지디스플레이 주식회사 고해상도 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판 및 이를 포함하는 고해상도 디지털 엑스레이 검출기
CN111106134B (zh) * 2018-10-29 2023-08-08 夏普株式会社 有源矩阵基板以及具备其的x射线拍摄面板
JP2022043369A (ja) * 2018-12-26 2022-03-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置および電子機器
US12021092B2 (en) * 2020-04-17 2024-06-25 Beijing Boe Sensor Technology Co., Ltd. Flat panel detector substrate and manufacturing method thereof, and flat panel detector
JP7449264B2 (ja) * 2021-08-18 2024-03-13 株式会社東芝 放射線検出器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0964451A2 (fr) * 1998-06-02 1999-12-15 Canon Kabushiki Kaisha Photocapteur et système de détection de radiation
EP1179852A2 (fr) * 2000-08-03 2002-02-13 General Electric Company Festkörper-Bildsensor mit Gate-gesteuerten Photodioden und Verfahren zur Herstellung
DE102006056995A1 (de) * 2005-11-30 2007-05-31 General Electric Co. Transistor und Diodenarray in Dünnfilmtechnik für ein Bildgebungspaneel oder ähnliches

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02128468A (ja) * 1988-11-08 1990-05-16 Fujitsu Ltd 固体撮像装置及びその製造方法
JPH02139525A (ja) * 1988-11-21 1990-05-29 Fuji Electric Co Ltd 表示パネルのアクティブマトリックス基板
US5563421A (en) * 1995-06-07 1996-10-08 Sterling Diagnostic Imaging, Inc. Apparatus and method for eliminating residual charges in an image capture panel
US5777355A (en) 1996-12-23 1998-07-07 General Electric Company Radiation imager with discontinuous dielectric
JP4271268B2 (ja) * 1997-09-20 2009-06-03 株式会社半導体エネルギー研究所 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
JP2000137080A (ja) 1998-08-28 2000-05-16 Fuji Photo Film Co Ltd 放射線画像検出装置
US6535576B2 (en) * 2000-12-29 2003-03-18 Ge Medical Systems Global Technology Company, Llc Enhanced digital detector and system and method incorporating same
JP4376522B2 (ja) * 2003-01-24 2009-12-02 シャープ株式会社 電磁波検出器
FR2852147B1 (fr) * 2003-03-06 2005-09-30 Commissariat Energie Atomique Matrice de pixels detecteurs integree sur circuit de lecture de charges
US20050184244A1 (en) * 2004-02-25 2005-08-25 Shimadzu Corporation Radiation detector and light or radiation detector
JP2006049873A (ja) * 2004-07-06 2006-02-16 Fuji Photo Film Co Ltd 機能素子
US7651877B2 (en) * 2004-10-28 2010-01-26 Sharp Kabushiki Kaisha Two-dimensional image detecting apparatus and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0964451A2 (fr) * 1998-06-02 1999-12-15 Canon Kabushiki Kaisha Photocapteur et système de détection de radiation
EP1179852A2 (fr) * 2000-08-03 2002-02-13 General Electric Company Festkörper-Bildsensor mit Gate-gesteuerten Photodioden und Verfahren zur Herstellung
DE102006056995A1 (de) * 2005-11-30 2007-05-31 General Electric Co. Transistor und Diodenarray in Dünnfilmtechnik für ein Bildgebungspaneel oder ähnliches

Also Published As

Publication number Publication date
US20120187464A1 (en) 2012-07-26
EP2086006B1 (fr) 2016-09-07
CN101499481B (zh) 2012-06-13
EP2731136B1 (fr) 2020-01-15
JP5185013B2 (ja) 2013-04-17
US20090189231A1 (en) 2009-07-30
EP2731136A8 (fr) 2014-08-06
TW201336059A (zh) 2013-09-01
US8174087B2 (en) 2012-05-08
CN102629618A (zh) 2012-08-08
TWI515881B (zh) 2016-01-01
EP2086006A2 (fr) 2009-08-05
CN101499481A (zh) 2009-08-05
JP2009267326A (ja) 2009-11-12
TWI404197B (zh) 2013-08-01
EP2731136A1 (fr) 2014-05-14
CN102629618B (zh) 2015-05-06
TW200939460A (en) 2009-09-16
US8436442B2 (en) 2013-05-07

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