EP2109890A4 - Circuit mosfet a mode d'appauvrissement et applications - Google Patents

Circuit mosfet a mode d'appauvrissement et applications

Info

Publication number
EP2109890A4
EP2109890A4 EP08728213A EP08728213A EP2109890A4 EP 2109890 A4 EP2109890 A4 EP 2109890A4 EP 08728213 A EP08728213 A EP 08728213A EP 08728213 A EP08728213 A EP 08728213A EP 2109890 A4 EP2109890 A4 EP 2109890A4
Authority
EP
European Patent Office
Prior art keywords
applications
depth mode
mosfet circuit
mosfet
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08728213A
Other languages
German (de)
English (en)
Other versions
EP2109890A2 (fr
Inventor
Went T Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Keystone Semiconductor Inc
Original Assignee
Keystone Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Keystone Semiconductor Inc filed Critical Keystone Semiconductor Inc
Priority to EP10172462A priority Critical patent/EP2287909A2/fr
Priority to EP10172459A priority patent/EP2287908A2/fr
Publication of EP2109890A2 publication Critical patent/EP2109890A2/fr
Publication of EP2109890A4 publication Critical patent/EP2109890A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
EP08728213A 2007-01-24 2008-01-24 Circuit mosfet a mode d'appauvrissement et applications Withdrawn EP2109890A4 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10172462A EP2287909A2 (fr) 2007-01-24 2008-01-24 Circuit MOSFET à mode d'appauvrissement et application associée
EP10172459A EP2287908A2 (fr) 2007-01-24 2008-01-24 Circuit MOSFET d'appauvrissement et application associée

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88636307P 2007-01-24 2007-01-24
PCT/US2008/051913 WO2008092004A2 (fr) 2007-01-24 2008-01-24 Circuit mosfet à mode d'appauvrissement et applications

Publications (2)

Publication Number Publication Date
EP2109890A2 EP2109890A2 (fr) 2009-10-21
EP2109890A4 true EP2109890A4 (fr) 2010-02-10

Family

ID=39645162

Family Applications (3)

Application Number Title Priority Date Filing Date
EP08728213A Withdrawn EP2109890A4 (fr) 2007-01-24 2008-01-24 Circuit mosfet a mode d'appauvrissement et applications
EP10172459A Withdrawn EP2287908A2 (fr) 2007-01-24 2008-01-24 Circuit MOSFET d'appauvrissement et application associée
EP10172462A Withdrawn EP2287909A2 (fr) 2007-01-24 2008-01-24 Circuit MOSFET à mode d'appauvrissement et application associée

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP10172459A Withdrawn EP2287908A2 (fr) 2007-01-24 2008-01-24 Circuit MOSFET d'appauvrissement et application associée
EP10172462A Withdrawn EP2287909A2 (fr) 2007-01-24 2008-01-24 Circuit MOSFET à mode d'appauvrissement et application associée

Country Status (4)

Country Link
EP (3) EP2109890A4 (fr)
JP (1) JP2010517204A (fr)
CN (1) CN101632176A (fr)
WO (1) WO2008092004A2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5577082B2 (ja) * 2009-12-08 2014-08-20 ルネサスエレクトロニクス株式会社 半導体装置
TWI386109B (zh) * 2009-12-17 2013-02-11 Askey Computer Corp 產線之靜電防護方法及裝置
CN101807905B (zh) * 2010-02-11 2012-05-23 西安捷威半导体有限公司 一种耗尽型半导体开关器件的驱动电路及其驱动方法
GB201102473D0 (en) 2011-02-11 2011-03-30 Esg Pool Ventilation Ltd Heating and cooling system and related methods
CN102651366B (zh) * 2012-01-12 2013-06-12 京东方科技集团股份有限公司 一种静电释放保护电路及包括该电路的显示装置
FI20150334A (fi) * 2015-01-14 2016-07-15 Artto Mikael Aurola Paranneltu puolijohdekokoonpano
FI20150294A (fi) * 2015-10-23 2017-04-24 Ari Paasio Matalan tehonkulutuksen logiikkaperhe
CN108806742B (zh) * 2017-05-04 2022-01-04 汤朝景 随机存取存储器并且具有与其相关的电路、方法以及设备
TWI688192B (zh) * 2018-11-06 2020-03-11 新唐科技股份有限公司 控制電路及其包含之半導體結構
US11101796B2 (en) 2020-01-06 2021-08-24 Diodes Incorporated Gate drive apparatus and control method
CN113078888B (zh) 2020-01-06 2024-04-19 达尔科技股份有限公司 栅极驱动设备和控制方法
US12490500B2 (en) 2021-11-04 2025-12-02 Diodes Incorporated Semiconductor device and processes for making same
EP4435554A1 (fr) * 2023-03-24 2024-09-25 Nexperia B.V. Circuit de tension de référence

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062000A (en) * 1974-10-03 1977-12-06 Mostek Corporation Current sense amp for static memory cell
US5966324A (en) * 1996-12-05 1999-10-12 Mitsubishi Denki Kabushiki Kaisha Static semiconductor memory device driving bit line potential by bipolar transistor shared by adjacent memory cells
US6363005B1 (en) * 2001-03-07 2002-03-26 United Microelectronics Corp. Method of increasing operating speed of SRAM
US6639835B2 (en) * 2000-02-29 2003-10-28 Micron Technology, Inc. Static NVRAM with ultra thin tunnel oxides
US6992915B2 (en) * 2002-03-27 2006-01-31 Regents Of The University Of California Self reverse bias low-power high-performance storage circuitry and related methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW435007B (en) * 1996-04-08 2001-05-16 Hitachi Ltd Semiconductor integrated circuit device
JP2976903B2 (ja) * 1996-10-08 1999-11-10 日本電気株式会社 半導体記憶装置
US6879199B2 (en) * 2002-02-15 2005-04-12 Valere Power, Inc. PWM control signal generation method and apparatus
US7345511B2 (en) * 2002-08-29 2008-03-18 Technion Research & Development Foundation Ltd. Logic circuit and method of logic circuit design
US6906962B2 (en) * 2002-09-30 2005-06-14 Agere Systems Inc. Method for defining the initial state of static random access memory

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062000A (en) * 1974-10-03 1977-12-06 Mostek Corporation Current sense amp for static memory cell
US5966324A (en) * 1996-12-05 1999-10-12 Mitsubishi Denki Kabushiki Kaisha Static semiconductor memory device driving bit line potential by bipolar transistor shared by adjacent memory cells
US6639835B2 (en) * 2000-02-29 2003-10-28 Micron Technology, Inc. Static NVRAM with ultra thin tunnel oxides
US6363005B1 (en) * 2001-03-07 2002-03-26 United Microelectronics Corp. Method of increasing operating speed of SRAM
US6992915B2 (en) * 2002-03-27 2006-01-31 Regents Of The University Of California Self reverse bias low-power high-performance storage circuitry and related methods

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of WO2008092004A2 *
Y. TAKAHASHI ET AL.: "A Multiple-Valued SRAM with Combined Single-Electron and MOS Transistors", IEEE TRANS.ELECTRON DEVICES, vol. 43, 1996, pages 1213 - 1214, XP002627000 *

Also Published As

Publication number Publication date
EP2287908A2 (fr) 2011-02-23
WO2008092004A3 (fr) 2008-10-16
WO2008092004A2 (fr) 2008-07-31
EP2287909A2 (fr) 2011-02-23
EP2109890A2 (fr) 2009-10-21
JP2010517204A (ja) 2010-05-20
CN101632176A (zh) 2010-01-20

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Legal Events

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RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 27/088 20060101AFI20090826BHEP

Ipc: G11C 11/412 20060101ALI20091230BHEP

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Effective date: 20100113

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