EP2181464A4 - Solarzelle mit poröser struktur und herstellungsverfahren dafür - Google Patents

Solarzelle mit poröser struktur und herstellungsverfahren dafür

Info

Publication number
EP2181464A4
EP2181464A4 EP08793370.1A EP08793370A EP2181464A4 EP 2181464 A4 EP2181464 A4 EP 2181464A4 EP 08793370 A EP08793370 A EP 08793370A EP 2181464 A4 EP2181464 A4 EP 2181464A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
same
solar cell
porous structure
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08793370.1A
Other languages
English (en)
French (fr)
Other versions
EP2181464A2 (de
Inventor
Il-Hyoung Jung
Ju-Hwan Yun
Jong-Hwan Kim
Jin-Ah Kim
Sun-Hee Kim
Ji-Hoon Ko
Young-Hyun Lee
Bum-Sung Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070084157A external-priority patent/KR20090019600A/ko
Priority claimed from KR1020070106215A external-priority patent/KR20090040728A/ko
Priority claimed from KR1020070131101A external-priority patent/KR20090063653A/ko
Priority claimed from KR1020080001763A external-priority patent/KR20090076035A/ko
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of EP2181464A2 publication Critical patent/EP2181464A2/de
Publication of EP2181464A4 publication Critical patent/EP2181464A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1228—Active materials comprising only Group IV materials porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
EP08793370.1A 2007-08-21 2008-08-20 Solarzelle mit poröser struktur und herstellungsverfahren dafür Withdrawn EP2181464A4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020070084157A KR20090019600A (ko) 2007-08-21 2007-08-21 고효율 태양전지 및 그의 제조방법
KR1020070106215A KR20090040728A (ko) 2007-10-22 2007-10-22 다공성 표면을 가지는 반도체 웨이퍼 기판을 이용한 벌크형태양전지 및 그의 제조방법
KR1020070131101A KR20090063653A (ko) 2007-12-14 2007-12-14 Ｐｎ접합소자의 제조방법 및 상기 ｐｎ 접합소자를포함하는 태양전지
KR1020080001763A KR20090076035A (ko) 2008-01-07 2008-01-07 표면 부동태화된 다공성 구조의 벌크형 태양전지와 그제조방법
PCT/KR2008/004857 WO2009025502A2 (en) 2007-08-21 2008-08-20 Solar cell having porous structure and method for fabrication thereof

Publications (2)

Publication Number Publication Date
EP2181464A2 EP2181464A2 (de) 2010-05-05
EP2181464A4 true EP2181464A4 (de) 2015-04-01

Family

ID=40378827

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08793370.1A Withdrawn EP2181464A4 (de) 2007-08-21 2008-08-20 Solarzelle mit poröser struktur und herstellungsverfahren dafür

Country Status (3)

Country Link
EP (1) EP2181464A4 (de)
JP (1) JP2010527163A (de)
WO (1) WO2009025502A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090236317A1 (en) * 2008-03-21 2009-09-24 Midwest Research Institute Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions
KR101002682B1 (ko) * 2008-08-28 2010-12-21 삼성전기주식회사 태양전지 및 그 제조방법
JP5300681B2 (ja) * 2009-09-30 2013-09-25 東京エレクトロン株式会社 太陽電池の製造方法
JP5340103B2 (ja) * 2009-09-30 2013-11-13 東京エレクトロン株式会社 太陽電池
WO2011060193A1 (en) * 2009-11-11 2011-05-19 Alliance For Sustainable Energy, Llc Wet-chemical systems and methods for producing black silicon substrates
JP5424270B2 (ja) 2010-05-11 2014-02-26 国立大学法人東京農工大学 半導体ソーラーセル
CN101976703B (zh) * 2010-07-28 2011-12-14 常州天合光能有限公司 降低表面复合减反膜电池的工艺
CN101964367A (zh) * 2010-08-23 2011-02-02 中国科学院微电子研究所 一种多孔结构的衬底及其制备方法
KR101658677B1 (ko) * 2010-12-16 2016-09-21 엘지전자 주식회사 태양 전지 및 그 제조 방법
US9276153B2 (en) 2011-01-26 2016-03-01 Sumco Corporation Solar cell wafer and method of producing the same
KR101763319B1 (ko) 2011-01-31 2017-08-01 한양대학교 산학협력단 전기화학적 식각법을 이용한 태양 전지의 제조 방법
US11251318B2 (en) 2011-03-08 2022-02-15 Alliance For Sustainable Energy, Llc Efficient black silicon photovoltaic devices with enhanced blue response
CN102820370B (zh) * 2011-06-08 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 硅片的制绒处理方法
CN107046079A (zh) * 2016-02-05 2017-08-15 上海凯世通半导体股份有限公司 掺杂方法
CN106653939B (zh) * 2016-11-17 2018-03-27 横店集团东磁股份有限公司 一种应用于晶硅太阳能电池的热氧化工艺
CN114583015A (zh) * 2022-03-25 2022-06-03 安徽华晟新能源科技有限公司 一种异质结电池及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104463A (ja) * 1992-09-18 1994-04-15 Hitachi Ltd 太陽電池およびその製造方法
EP0933822A2 (de) * 1998-01-20 1999-08-04 Sharp Kabushiki Kaisha Substrat zum Herstellen eines Dünnschicht-Halbleiterbauelements hoher Festigkeit und Verfahren zur Herstellung eines Dünnschicht-Halbleiterbauelements hoher Festigkeit.
US20050126627A1 (en) * 2003-11-19 2005-06-16 Sharp Kabushiki Kaisha Solar cell and method for producing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990016619A (ko) * 1997-08-18 1999-03-15 손욱 다공성 실리콘을 이용한 전계발광소자의 제조방법
KR100434537B1 (ko) * 1999-03-31 2004-06-05 삼성전자주식회사 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법
JP3838911B2 (ja) * 2001-12-25 2006-10-25 京セラ株式会社 太陽電池素子の製造方法
KR100922346B1 (ko) * 2002-04-03 2009-10-21 삼성에스디아이 주식회사 태양전지 및 그 제조 방법
JP2005072388A (ja) * 2003-08-26 2005-03-17 Kyocera Corp 太陽電池素子の製造方法
JP2005136062A (ja) * 2003-10-29 2005-05-26 Sharp Corp 太陽電池の製造方法
KR100677374B1 (ko) * 2005-11-14 2007-02-02 준 신 이 박판 실리콘 기판을 이용한 다공성 실리콘 태양전지 및 그제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104463A (ja) * 1992-09-18 1994-04-15 Hitachi Ltd 太陽電池およびその製造方法
EP0933822A2 (de) * 1998-01-20 1999-08-04 Sharp Kabushiki Kaisha Substrat zum Herstellen eines Dünnschicht-Halbleiterbauelements hoher Festigkeit und Verfahren zur Herstellung eines Dünnschicht-Halbleiterbauelements hoher Festigkeit.
US20050126627A1 (en) * 2003-11-19 2005-06-16 Sharp Kabushiki Kaisha Solar cell and method for producing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KOYNOV SVETOSLAV ET AL: "Black nonreflecting silicon surfaces for solar cells", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 88, no. 20, 16 May 2006 (2006-05-16), pages 203107 - 203107, XP012081745, ISSN: 0003-6951, DOI: 10.1063/1.2204573 *

Also Published As

Publication number Publication date
WO2009025502A3 (en) 2009-04-23
EP2181464A2 (de) 2010-05-05
JP2010527163A (ja) 2010-08-05
WO2009025502A2 (en) 2009-02-26

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