EP2184772A4 - Procédé de fabrication de particules fines de semi-conducteur et particules fines - Google Patents

Procédé de fabrication de particules fines de semi-conducteur et particules fines

Info

Publication number
EP2184772A4
EP2184772A4 EP08827049A EP08827049A EP2184772A4 EP 2184772 A4 EP2184772 A4 EP 2184772A4 EP 08827049 A EP08827049 A EP 08827049A EP 08827049 A EP08827049 A EP 08827049A EP 2184772 A4 EP2184772 A4 EP 2184772A4
Authority
EP
European Patent Office
Prior art keywords
fine particles
manufacturing semiconductor
semiconductor fine
manufacturing
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP08827049A
Other languages
German (de)
English (en)
Other versions
EP2184772B1 (fr
EP2184772A1 (fr
Inventor
Masakazu Enomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
M Technique Co Ltd
Original Assignee
M Technique Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by M Technique Co Ltd filed Critical M Technique Co Ltd
Priority to EP16174263.0A priority Critical patent/EP3106227A1/fr
Publication of EP2184772A1 publication Critical patent/EP2184772A1/fr
Publication of EP2184772A4 publication Critical patent/EP2184772A4/fr
Application granted granted Critical
Publication of EP2184772B1 publication Critical patent/EP2184772B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/27Mixers with stator-rotor systems, e.g. with intermeshing teeth or cylinders or having orifices
    • B01F27/271Mixers with stator-rotor systems, e.g. with intermeshing teeth or cylinders or having orifices with means for moving the materials to be mixed radially between the surfaces of the rotor and the stator
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00Compounds of zinc
    • C01G9/08Sulfides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/823Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H10H20/8232Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40Organosilicon compounds, e.g. TIPS pentacene
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/27Mixers with stator-rotor systems, e.g. with intermeshing teeth or cylinders or having orifices
    • B01F27/271Mixers with stator-rotor systems, e.g. with intermeshing teeth or cylinders or having orifices with means for moving the materials to be mixed radially between the surfaces of the rotor and the stator
    • B01F27/2714Mixers with stator-rotor systems, e.g. with intermeshing teeth or cylinders or having orifices with means for moving the materials to be mixed radially between the surfaces of the rotor and the stator the relative position of the stator and the rotor, gap in between or gap with the walls being adjustable
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00Methods or apparatus for measurement or analysis of nanostructures
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/40Electric properties
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3451Structure
    • H10P14/3452Microstructure
    • H10P14/3461Nanoparticles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S516/00Colloid systems and wetting agents; subcombinations thereof; processes of
    • Y10S516/924Significant dispersive or manipulative operation or step in making or stabilizing colloid system
    • Y10S516/927Significant dispersive or manipulative operation or step in making or stabilizing colloid system in situ formation of a colloid system making or stabilizing agent which chemical reaction
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S516/00Colloid systems and wetting agents; subcombinations thereof; processes of
    • Y10S516/924Significant dispersive or manipulative operation or step in making or stabilizing colloid system
    • Y10S516/928Mixing combined with non-mixing operation or step, successively or simultaneously, e.g. heating, cooling, ph change, ageing, milling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/84Manufacture, treatment, or detection of nanostructure
    • Y10S977/895Manufacture, treatment, or detection of nanostructure having step or means utilizing chemical property
    • Y10S977/896Chemical synthesis, e.g. chemical bonding or breaking

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Luminescent Compositions (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
EP08827049.1A 2007-08-09 2008-08-07 Procédé de fabrication de particules fines de semi-conducteur et particules fines Active EP2184772B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP16174263.0A EP3106227A1 (fr) 2007-08-09 2008-08-07 Procédé de fabrication de particules fines de semi-conducteurs et lesdites fines particules

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007207426 2007-08-09
JP2008062315 2008-03-12
PCT/JP2008/064246 WO2009020188A1 (fr) 2007-08-09 2008-08-07 Procédé de fabrication de particules fines de semi-conducteur et particules fines

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP16174263.0A Division-Into EP3106227A1 (fr) 2007-08-09 2008-08-07 Procédé de fabrication de particules fines de semi-conducteurs et lesdites fines particules
EP16174263.0A Division EP3106227A1 (fr) 2007-08-09 2008-08-07 Procédé de fabrication de particules fines de semi-conducteurs et lesdites fines particules

Publications (3)

Publication Number Publication Date
EP2184772A1 EP2184772A1 (fr) 2010-05-12
EP2184772A4 true EP2184772A4 (fr) 2012-12-26
EP2184772B1 EP2184772B1 (fr) 2016-08-03

Family

ID=40341417

Family Applications (2)

Application Number Title Priority Date Filing Date
EP16174263.0A Withdrawn EP3106227A1 (fr) 2007-08-09 2008-08-07 Procédé de fabrication de particules fines de semi-conducteurs et lesdites fines particules
EP08827049.1A Active EP2184772B1 (fr) 2007-08-09 2008-08-07 Procédé de fabrication de particules fines de semi-conducteur et particules fines

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP16174263.0A Withdrawn EP3106227A1 (fr) 2007-08-09 2008-08-07 Procédé de fabrication de particules fines de semi-conducteurs et lesdites fines particules

Country Status (6)

Country Link
US (2) US8841352B2 (fr)
EP (2) EP3106227A1 (fr)
JP (1) JP4458202B2 (fr)
KR (2) KR101432093B1 (fr)
CN (1) CN101855713B (fr)
WO (1) WO2009020188A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4817154B2 (ja) * 2007-07-06 2011-11-16 エム・テクニック株式会社 強制超薄膜回転式処理法を用いたナノ粒子の製造方法
JP4849648B2 (ja) * 2007-11-09 2012-01-11 エム・テクニック株式会社 エマルションの製造方法
US8865055B2 (en) 2008-07-16 2014-10-21 Materials And Electrochemical Research (Mer) Corporation Production of sintered three-dimensional ceramic bodies
US20100144510A1 (en) * 2008-07-16 2010-06-10 Sepulveda Juan L Production of sintered three-dimensional ceramic bodies
EP2418015B1 (fr) * 2008-11-25 2016-01-06 M. Technique Co., Ltd. Matériel de traitement de fluide et procédé de traitement
CN102905783B (zh) * 2010-05-25 2016-04-27 M技术株式会社 控制了掺杂元素量的析出物质的制造方法
KR101892948B1 (ko) * 2010-11-24 2018-08-29 엠. 테크닉 가부시키가이샤 고용체 안료 나노 입자 및 고용비가 제어된 고용체 안료 나노 입자의 제조 방법
WO2012137628A1 (fr) 2011-04-01 2012-10-11 エム・テクニック株式会社 Procédés de fabrication d'un sel baryum titanyle et de titanate de baryum
WO2012147209A1 (fr) * 2011-04-28 2012-11-01 エム・テクニック株式会社 Procédé pour la production d'oxyde/d'hydroxyde
WO2012165000A1 (fr) * 2011-05-28 2012-12-06 エム・テクニック株式会社 Procédé anti-adhésion de matériau à traiter mettant en œuvre un dispositif de traitement à fluide de type film mince forcé
US20150005429A1 (en) * 2012-02-13 2015-01-01 Kyowa Chemical Industry Co., Ltd. Magnesium hydroxide fine particles
JP6014521B2 (ja) * 2013-03-11 2016-10-25 株式会社日立製作所 相変化メモリおよび半導体記録再生装置
KR20240053033A (ko) 2021-08-31 2024-04-23 디아이씨 가부시끼가이샤 발광 입자 및 발광 입자 함유 조성물의 제조 방법
KR102779630B1 (ko) * 2022-05-12 2025-03-12 엠. 테크닉 가부시키가이샤 단결정 구상 실리콘 나노 입자
JPWO2024057464A1 (fr) 2022-09-14 2024-03-21
WO2024180594A1 (fr) * 2023-02-27 2024-09-06 エム・テクニック株式会社 Méthode de production de nanoparticules de carbone sphériques monocristallines supportant du platine
WO2024224517A1 (fr) 2023-04-26 2024-10-31 エム・テクニック株式会社 Procédé de production de nanoparticules de sodium métal sphériques monocristallines

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040115123A1 (en) * 2001-03-07 2004-06-17 Yingyan Zhou Process for producing nanometer grade powders
US20040241430A1 (en) * 2001-07-20 2004-12-02 Jachuck Roshan Jeet Jee Methods of manufacturing particles
JP2006341232A (ja) * 2005-06-10 2006-12-21 Canon Inc 流体処理装置および流体処理方法

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JPH1112091A (ja) 1997-06-20 1999-01-19 Shin Etsu Chem Co Ltd 球状単結晶シリコンの製造方法
JP2001302399A (ja) 2000-04-19 2001-10-31 Mitsubishi Chemicals Corp 半導体超微粒子の製造方法
JP2002224557A (ja) * 2001-02-01 2002-08-13 Mitsubishi Chemicals Corp 半導体超微粒子の製造方法
JP4038083B2 (ja) 2002-07-16 2008-01-23 エム・テクニック株式会社 分散乳化装置及び分散乳化方法
CN1483515B (zh) * 2002-07-16 2010-07-28 M技术株式会社 流动体的处理装置、流动体的处理方法及带有微细化装置的脱气机
JP3955254B2 (ja) * 2002-11-25 2007-08-08 エム・テクニック株式会社 微細化装置付脱気機及び微細化による脱気方法
JP3923000B2 (ja) * 2002-11-11 2007-05-30 株式会社日本ボロン 微小物質分離乾燥方法および装置
JP2005272516A (ja) 2004-03-23 2005-10-06 Sumitomo Osaka Cement Co Ltd 化合物半導体超微粒子の製造方法
JP5001529B2 (ja) * 2005-06-10 2012-08-15 富士フイルム株式会社 有機顔料微粒子の製造方法
JP4504267B2 (ja) 2005-06-28 2010-07-14 株式会社東芝 半導体ナノ粒子の製造方法及び半導体材料の表面を被覆する方法
JP2007197382A (ja) 2006-01-27 2007-08-09 Konica Minolta Medical & Graphic Inc 半導体ナノ粒子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040115123A1 (en) * 2001-03-07 2004-06-17 Yingyan Zhou Process for producing nanometer grade powders
US20040241430A1 (en) * 2001-07-20 2004-12-02 Jachuck Roshan Jeet Jee Methods of manufacturing particles
JP2006341232A (ja) * 2005-06-10 2006-12-21 Canon Inc 流体処理装置および流体処理方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2009020188A1 *

Also Published As

Publication number Publication date
JP4458202B2 (ja) 2010-04-28
US20150034884A1 (en) 2015-02-05
JPWO2009020188A1 (ja) 2010-11-04
US8841352B2 (en) 2014-09-23
KR101378413B1 (ko) 2014-03-27
KR20100053629A (ko) 2010-05-20
EP2184772B1 (fr) 2016-08-03
KR20140013113A (ko) 2014-02-04
EP3106227A1 (fr) 2016-12-21
US9337382B2 (en) 2016-05-10
EP2184772A1 (fr) 2010-05-12
CN101855713B (zh) 2013-02-13
WO2009020188A1 (fr) 2009-02-12
KR101432093B1 (ko) 2014-08-21
US20110042626A1 (en) 2011-02-24
CN101855713A (zh) 2010-10-06

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