EP2385158A4 - Monocristal de carbure de silicium et plaquette de monocristal de carbure de silicium - Google Patents

Monocristal de carbure de silicium et plaquette de monocristal de carbure de silicium

Info

Publication number
EP2385158A4
EP2385158A4 EP09820658A EP09820658A EP2385158A4 EP 2385158 A4 EP2385158 A4 EP 2385158A4 EP 09820658 A EP09820658 A EP 09820658A EP 09820658 A EP09820658 A EP 09820658A EP 2385158 A4 EP2385158 A4 EP 2385158A4
Authority
EP
European Patent Office
Prior art keywords
silicon carbide
monocrystal silicon
plateboard
monocrystal
carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP09820658A
Other languages
German (de)
English (en)
Other versions
EP2385158A1 (fr
EP2385158B1 (fr
Inventor
Masashi Nakabayashi
Tatsuo Fujimoto
Masakazu Katsuno
Hiroshi Tsuge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Publication of EP2385158A1 publication Critical patent/EP2385158A1/fr
Publication of EP2385158A4 publication Critical patent/EP2385158A4/fr
Application granted granted Critical
Publication of EP2385158B1 publication Critical patent/EP2385158B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2918—Rod, strand, filament or fiber including free carbon or carbide or therewith [not as steel]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP09820658.4A 2008-10-15 2009-10-14 Monocristal de carbure de silicium et plaquette de monocristal de carbure de silicium Active EP2385158B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008265926A JP2010095397A (ja) 2008-10-15 2008-10-15 炭化珪素単結晶及び炭化珪素単結晶ウェハ
PCT/JP2009/068084 WO2010044484A1 (fr) 2008-10-15 2009-10-14 Monocristal de carbure de silicium et plaquette de monocristal de carbure de silicium

Publications (3)

Publication Number Publication Date
EP2385158A1 EP2385158A1 (fr) 2011-11-09
EP2385158A4 true EP2385158A4 (fr) 2012-12-05
EP2385158B1 EP2385158B1 (fr) 2017-07-26

Family

ID=42106644

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09820658.4A Active EP2385158B1 (fr) 2008-10-15 2009-10-14 Monocristal de carbure de silicium et plaquette de monocristal de carbure de silicium

Country Status (6)

Country Link
US (1) US9777403B2 (fr)
EP (1) EP2385158B1 (fr)
JP (1) JP2010095397A (fr)
KR (1) KR101379941B1 (fr)
CN (2) CN106435733B (fr)
WO (1) WO2010044484A1 (fr)

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JP5565070B2 (ja) * 2010-04-26 2014-08-06 住友電気工業株式会社 炭化珪素結晶および炭化珪素結晶の製造方法
JP5472012B2 (ja) * 2010-09-29 2014-04-16 株式会社デンソー 炭化珪素単結晶の製造方法
CA2779961A1 (fr) 2010-12-27 2012-06-27 Sumitomo Electric Industries, Ltd. Substrat en carbure de silicium, dispositif semi-conducteur, methode de fabrication de substrat en carbure de silicium et methode de fabrication de dispositif semi-conducteur
JP5696630B2 (ja) 2011-09-21 2015-04-08 住友電気工業株式会社 炭化珪素基板およびその製造方法
JP5668724B2 (ja) * 2012-06-05 2015-02-12 トヨタ自動車株式会社 ＳｉＣ単結晶のインゴット、ＳｉＣ単結晶、及び製造方法
KR20150030269A (ko) * 2012-07-11 2015-03-19 유니트랙트 시린지 피티와이 엘티디 약물 송달 펌프용 배기식 유체 경로를 갖는 삽입 기구
JP2014024703A (ja) * 2012-07-26 2014-02-06 Sumitomo Electric Ind Ltd 炭化珪素単結晶の製造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
JP5991161B2 (ja) * 2012-11-20 2016-09-14 住友電気工業株式会社 炭化珪素基板および炭化珪素インゴット、ならびにこれらの製造方法
US9738991B2 (en) * 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) * 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) * 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP2014189419A (ja) 2013-03-26 2014-10-06 Sumitomo Electric Ind Ltd インゴット、炭化珪素基板およびインゴットの製造方法
CN105518187B (zh) * 2013-09-06 2019-11-08 Gtat公司 生产大块硅碳化物的方法
JP6473455B2 (ja) * 2013-09-06 2019-02-20 ジーティーエイティー コーポレーションＧｔａｔ Ｃｏｒｐｏｒａｔｉｏｎ 炭化ケイ素シードを用いたバルクの炭化ケイ素の製造方法及び装置
DE112014004073B4 (de) * 2013-09-06 2026-04-30 Gtat Corporation Sublimationsofen
JP2015098420A (ja) 2013-11-20 2015-05-28 住友電気工業株式会社 炭化珪素インゴットおよび炭化珪素基板の製造方法
US9422639B2 (en) 2014-03-06 2016-08-23 Sumitomo Electric Industries, Ltd. Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
US10711369B2 (en) 2014-12-05 2020-07-14 Showa Denko K.K. Method for producing silicon carbide single crystal and silicon carbide single crystal substrate
JP2016185885A (ja) * 2015-03-27 2016-10-27 京セラ株式会社 インゴットおよびインゴットの製造方法
JP5983824B2 (ja) * 2015-06-12 2016-09-06 住友電気工業株式会社 炭化珪素基板
JP6374354B2 (ja) * 2015-06-22 2018-08-15 トヨタ自動車株式会社 ＳｉＣ結晶の製造方法
JP6594148B2 (ja) * 2015-09-30 2019-10-23 昭和電工株式会社 炭化珪素単結晶インゴット
CN108026664B (zh) * 2015-10-27 2020-11-13 住友电气工业株式会社 碳化硅基板
JP6597381B2 (ja) * 2016-02-22 2019-10-30 住友電気工業株式会社 炭化珪素基板の製造方法、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
JP2016183108A (ja) * 2016-07-27 2016-10-20 住友電気工業株式会社 炭化珪素基板
JP6299827B2 (ja) * 2016-09-07 2018-03-28 住友電気工業株式会社 半導体基板
CN106894089B (zh) * 2017-03-09 2018-03-09 中科钢研节能科技有限公司 碳化硅单晶的制备方法
JP6551494B2 (ja) * 2017-11-21 2019-07-31 住友電気工業株式会社 炭化珪素インゴットおよび炭化珪素基板の製造方法
JP7447392B2 (ja) * 2018-09-10 2024-03-12 株式会社レゾナック ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法
TWI723415B (zh) * 2019-06-05 2021-04-01 環球晶圓股份有限公司 碳化矽晶體及碳化矽晶種片
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
WO2021085105A1 (fr) 2019-10-28 2021-05-06 ソニー株式会社 Dispositif de traitement d'informations, dispositif de proposition, procédé de traitement d'informations et procédé de proposition
CN110904501B (zh) * 2019-11-13 2022-03-29 安徽微芯长江半导体材料有限公司 晶体生长用籽晶下置式装置
KR102325751B1 (ko) * 2019-12-20 2021-11-12 주식회사 포스코 고품질 SiC 단결정 및 이의 성장방법
KR102236396B1 (ko) 2020-05-29 2021-04-02 에스케이씨 주식회사 탄화규소 잉곳의 제조방법 및 탄화규소 잉곳 제조용 시스템
CN113818081B (zh) * 2020-06-18 2026-06-19 盛新材料科技股份有限公司 半绝缘单晶碳化硅块材以及粉末
JP7494768B2 (ja) * 2021-03-16 2024-06-04 信越半導体株式会社 炭化珪素単結晶ウェーハの結晶欠陥評価方法
EP4060098A1 (fr) * 2021-03-19 2022-09-21 SiCrystal GmbH Procédé de fabrication pour un monocristal volumique de sic à distribution non homogène de dislocation en vis et substrat sic
WO2023283474A1 (fr) * 2021-07-09 2023-01-12 Pallidus, Inc. Cristaux, billes, tranches sic de type p et de faible résistivité et leurs dispositifs et procédés de fabrication
CN113445128A (zh) * 2021-09-01 2021-09-28 浙江大学杭州国际科创中心 低微管密度碳化硅单晶制备方法及碳化硅单晶
JP2023060589A (ja) * 2021-10-18 2023-04-28 株式会社レゾナック ＳｉＣインゴット及びＳｉＣウェハ
SE546355C2 (en) * 2022-11-28 2024-10-15 Kiselkarbid I Stockholm Ab Production of silicon carbide epitaxial wafers
WO2025077204A1 (fr) * 2023-10-09 2025-04-17 山东天岳先进科技股份有限公司 Cristal de sic à uniformité élevée, barre cristalline, substrat et dispositif à semi-conducteur

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JPH1067600A (ja) * 1996-08-26 1998-03-10 Nippon Steel Corp 単結晶炭化珪素インゴット及びその製造方法
US6734461B1 (en) * 1999-09-07 2004-05-11 Sixon Inc. SiC wafer, SiC semiconductor device, and production method of SiC wafer
EP1491662A1 (fr) * 2002-03-19 2004-12-29 Central Research Institute of Electric Power Industry PROCEDE DE PREPARATION DE CRISTAL SIC ET CRISTAL SiC AINSI PREPARE
US20060118037A1 (en) * 2004-12-08 2006-06-08 Adrian Powell Process for producing high quality large size silicon carbide crystals
JP2006290635A (ja) * 2005-04-05 2006-10-26 Nippon Steel Corp 炭化珪素単結晶の製造方法及び炭化珪素単結晶インゴット
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JPH1067600A (ja) * 1996-08-26 1998-03-10 Nippon Steel Corp 単結晶炭化珪素インゴット及びその製造方法
US6734461B1 (en) * 1999-09-07 2004-05-11 Sixon Inc. SiC wafer, SiC semiconductor device, and production method of SiC wafer
EP1491662A1 (fr) * 2002-03-19 2004-12-29 Central Research Institute of Electric Power Industry PROCEDE DE PREPARATION DE CRISTAL SIC ET CRISTAL SiC AINSI PREPARE
US20060118037A1 (en) * 2004-12-08 2006-06-08 Adrian Powell Process for producing high quality large size silicon carbide crystals
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MILLAN J ET AL: "Recent developments in SiC power devices and related technology", MICROELECTRONICS, 2004. 24TH INTERNATIONAL CONFERENCE ON NIS, SERBIA AND MONTENEGRO MAY 16-19, 2004, PISCATAWAY, NJ, USA,IEEE, vol. 1, 16 May 2004 (2004-05-16), pages 23 - 30, XP010709321, ISBN: 978-0-7803-8166-7, DOI: 10.1109/ICMEL.2004.1314551 *
SCHMITT ET AL: "Polytype stability and defects in differently doped bulk SiC", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 310, no. 5, 4 December 2007 (2007-12-04), pages 966 - 970, XP022492833, ISSN: 0022-0248, DOI: 10.1016/J.JCRYSGRO.2007.11.185 *
See also references of WO2010044484A1 *
SHIOMI H ET AL: "Crystal growth of micropipe free 4H-SiC on 4H-SiC{033@?8} seed and high-purity semi-insulating 6H-SiC", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 292, no. 2, 1 July 2006 (2006-07-01), pages 188 - 191, XP028016417, ISSN: 0022-0248, [retrieved on 20060701], DOI: 10.1016/J.JCRYSGRO.2006.04.004 *

Also Published As

Publication number Publication date
US20110206929A1 (en) 2011-08-25
JP2010095397A (ja) 2010-04-30
CN106435733B (zh) 2022-09-06
US9777403B2 (en) 2017-10-03
EP2385158A1 (fr) 2011-11-09
EP2385158B1 (fr) 2017-07-26
CN106435733A (zh) 2017-02-22
KR20110071092A (ko) 2011-06-28
WO2010044484A1 (fr) 2010-04-22
CN102187019A (zh) 2011-09-14
KR101379941B1 (ko) 2014-04-01

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