EP2413154B1 - Capteur magnéto-résistif - Google Patents

Capteur magnéto-résistif Download PDF

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Publication number
EP2413154B1
EP2413154B1 EP10171416.0A EP10171416A EP2413154B1 EP 2413154 B1 EP2413154 B1 EP 2413154B1 EP 10171416 A EP10171416 A EP 10171416A EP 2413154 B1 EP2413154 B1 EP 2413154B1
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EP
European Patent Office
Prior art keywords
magnetoresistive
segments
coil
elements
excitation coil
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EP10171416.0A
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German (de)
English (en)
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EP2413154A1 (fr
Inventor
Kim Phan Le
Frederik Willem Maurits Vanhelmont
Jaap Ruigrok
Andreas Bernardus Maria Jansman
Robert Hendrikus Margaretha Van Veldhoven
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NXP BV
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NXP BV
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Priority to EP10171416.0A priority Critical patent/EP2413154B1/fr
Priority to US13/191,730 priority patent/US8680857B2/en
Priority to CN201110213647.9A priority patent/CN102410848B/zh
Publication of EP2413154A1 publication Critical patent/EP2413154A1/fr
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors

Definitions

  • This invention relates to a magnetoresistive sensor.
  • Anisotropic magnetoresistive (AMR), or simply magnetoresistive (MR), sensors are used in a variety of automotive applications. They are used, for example, as angular sensors in throttle valves, rotational speed sensors in Automatic Breaking Systems (ABS), automated and automatic transmission systems, and as motion sensors in security systems.
  • ABS Automatic Breaking Systems
  • AMR giant magnetoresistive
  • the largest element of a conventional AMR rotational speed sensor is the biasing magnet which is glued on the outside of the package. This biasing magnet is also rather costly. It is used to provide a bias magnetic field to the sensor, stabilise magnetic domains, and prevent magnetisation flipping.
  • AMR sensors are often also provided with metal lines running over the elements, known as barber poles, which serve to linearise the sensor signal.
  • Figure 1 shows such a sensor comprising a lower layer with three parallel rows of three magnetoresistive segments 1 electrically connected in series by connections 2, and an upper layer (separated from the lower layer) in which a coil 3 is formed.
  • the magnetic field generated by the coil is shown by the arrows marked "H" and can be seen clearly in the cross-section.
  • an a.c. excitation current is passed through the coil 3.
  • One end of the magnetoresistive element is coupled to ground and the other end is coupled to an output terminal.
  • an a.c. excitation current having a frequency about 10 times higher than that of the external field to be detected, is caused to flow through the coil to create an a.c. excitation field on the magnetoresistive sensor elements.
  • This field is mixed with the external field inside the magnetoresistive elements (by virtue of their quadratic transfer function - resistance change is a quadratic function of the applied magnetic field in the Y direction).
  • the resulting signal has a spectrum with components d.c. and at frequencies of ⁇ exc - ⁇ ext , ⁇ exc + ⁇ ext and 2 ⁇ exc (where ⁇ ext and ⁇ exc denote the frequencies of the external field to be detected and of the excitation field created by the coil respectively).
  • the signal After filtering out the frequency component at 2 ⁇ exc , the signal contains the spectrum components at ⁇ exc - ⁇ ext and ⁇ exc + ⁇ ext , which convey the useful information.
  • the signal is then mixed again with a signal at a suitable frequency to bring one of these two components into a base-band frequency range, and the signal corresponding to the external field can then be extracted easily.
  • the useful information is conveyed by the two components ⁇ exc - ⁇ ext and ⁇ exc + ⁇ ext . It is very important that there should be no interfering frequency components getting into or close to this bandwidth.
  • FIG. 2 An illustration of the mechanism leading to capacitive coupling is shown in Figure 2 .
  • a source 4 sends an a.c. excitation current through the coil 3
  • a source 5 sends a d.c. bias current through the magnetoresistive element.
  • the a.c. signal in the coil 3 is coupled via the capacitance between the coil 3 and the magnetoresistive element (shown as three discrete capacitors rather than a distributed capacitance in Figure 2 for ease of illustration), giving rise to an a.c. leakage current in the magnetoresistive element. This current finds its way to ground by passing through the resistance of the magnetoresistive segments 1, giving an unwanted a.c. voltage contribution to the output voltage at the output terminal, V A .
  • FIG. 3 An illustration of the mechanism leading to inductive coupling is shown in Figure 3 .
  • the a.c. signal in the coil gives rise to an a.c. voltage contribution throughout the magnetoresistive element due to the mutual inductance between the coil 3 and magnetoresistive element.
  • This unwanted a.c. voltage adds to, and interferes with, the wanted signal at the magnetoresistive element output terminal.
  • a transpinnor-based magnetometer having four resistive elements exhibiting GMR in a bridge configuration.
  • a bias current is applied to the bridge, yielding an output if the bridge is unbalanced due to changes in the GMR resistors.
  • An oscillating magnetic field is applied inductively to the GMR resistors alternately driving them between saturated magnetic states.
  • the drive conductors are physically arranged so that an external magnetic field will oppose the applied field in two resistors and aid the applied field in the other two.
  • the output is nonzero only when the sum of the applied field and external field exceeds the GMR coercivity in one pair of GMR films and not the other.
  • the frequency of the output signal can be varied by switching the polarity of the bias current and controlling the phase with respect to the drive current.
  • a magnetoresistive sensor comprising first and second magnetoresistive elements, each of which is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments (12a - 12d, 14a - 14d), each overlying a corresponding segment (10a - 10d, 11a - 11d) of an excitation coil, wherein the resistance of the magnetoresistive segments (12a - 12d, 14a - 14d) in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element, characterised in that the or each magnetoresistive element is separated from a carrier substrate by an isolation layer, the thickness of the isolation layer being selected such that the product of the total resistance of the or each magnetoresistive element and the capacitance between the or each magnetoresistive element and the substrate is less
  • a magnetoresistive sensor comprising first and second magnetoresistive elements, each of which is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments (12a - 12d, 14a - 14d), each overlying a corresponding segment (10a - 10d, 11a - 11 d) of an excitation coil, wherein the resistance of the magnetoresistive segments (12a - 12d, 14a - 14d) in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element, characterised in that the excitation coil comprises first and second excitation coil elements electrically coupled in parallel, the magnetoresistive segments (12a - 12d, 14a - 14d) of the first and second magnetoresistive elements overlying a respective one of the first and second excitation coil
  • a magnetoresistive sensor comprising first and second magnetoresistive elements, each of which is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments (12a - 12d, 14a - 14d), each overlying a corresponding segment (10a - 10d, 11a - 11 d) of an excitation coil, wherein the resistance of the magnetoresistive segments (12a - 12d, 14a - 14d) in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element, characterised in that each of the first and second magnetoresistive elements comprises the same number of magnetoresistive segments (12a - 12d, 14a - 14d) configured such that adjacent magnetoresistive segments (12a - 12d, 14a - 14d) in the same magnetoresist
  • the resistances of the first and second magnetoresistive elements and the corresponding coil segments are effectively symmetrically distributed about the common ground terminal. Therefore, for each point on the first magnetoresistive element there exists a corresponding point on the second magnetoresistive element that has effectively the same impedance to the common ground terminal.
  • the local capacitance per unit length between the coil and each of the magnetoresistive elements is also the same.
  • the coil may be electrically driven so that any capacitively coupled currents will be identical in each of the two magnetoresitive elements and flow symmetrically to the common ground terminal.
  • the resistance of the magnetoresistive segments in each magnetoresistive element is the same, the capacitively coupled currents will cause the same voltage drop to appear on each magnetoresistive element relative to the common ground point. The two voltage drops therefore cancel.
  • the magnetic coupling per unit length is effectively symmetrically distributed: for each point on the first magnetoresistive element there exists a location on the second magnetoresistive element which has effectively the same degree of magnetic coupling per unit length with the coil.
  • the voltage drops caused by inductive coupling due to mutual inductance will be the same in each magnetoresistive element and will similarly cancel.
  • the common ground point is not necessarily coupled to a d.c. potential of zero volts, although it may be. It is simply any point that represents a ground for the a.c. excitation current flowing in the coil. Indeed, it need not be coupled to any particular potential, but could be left floating and assume ground potential due to the symmetry of layout of the two magnetoresistive elements.
  • magnetoresistive segments overlying corresponding segments of the excitation coil it is irrelevant to the operation of the invention whether the magnetoresistive segments lie above the coil or vice-versa.
  • overlying is intended to cover both possibilities. The essence is that a current through the coil induces a field parallel to the magnetic field to be measured by the sensor.
  • the first and second magnetoresistive elements are identical. Thus, they have an identical layout. This is an effective way to obtain the required symmetry of impedance for the two magnetoresistive elements and symmetry of capacitive and inductive coupling between the two magnetoresistive elements and the coil.
  • each of the first and second magnetoresistive elements is coupled to respective first and second output terminals.
  • a bias current source for providing a bias current in the first and second magnetoresistive elements is coupled between the first and second output terminals.
  • first and second bias current sources for providing a bias current in each of the first and second magnetoresistive elements respectively are coupled between the common ground terminal and a respective one of the first and second output terminals.
  • the excitation coil may comprise a single excitation coil element.
  • the segments of the excitation coil will all be coupled in series.
  • the excitation coil may be coupled at each end to an excitation current source for providing excitation current in the coil. This is one way in which the coil may be electrically driven so that any capacitively coupled currents will be identical in each of the two magnetoresitive elements and flow symmetrically to the common ground terminal, as mentioned above.
  • the excitation coil may be coupled at a midpoint along its length to a ground terminal.
  • first and second excitation current sources for providing excitation current in the coil are coupled between the ground terminal and respective ends of the excitation coil. If the coil comprises first and second excitation coil elements electrically coupled in parallel then each of these elements will have a midpoint that is coupled to the ground terminal.
  • the first end of the first magnetoresistive element may be coupled to the common ground terminal via a first ballast resistor and the second end of the second magnetoresistive element may be coupled to the second output terminal via a second ballast resistor.
  • the first and second ballast resistors preferably have the same resistance value.
  • n is the number of pairs of segments in each magnetoresistive element
  • R is the resistance of one segment in a pair
  • Vd is the voltage drop across one segment of the coil
  • VMR is the voltage difference over the full length of the magnetoresistive elements (i.e. the bias current times the sum of the resistances of the first and second magnetoresistive elements).
  • a magnetoresistive sensor comprising a magnetoresistive element, coupled at a first end to a ground terminal and comprising one or more pairs of magnetoresistive segments, each overlying a corresponding segment of an excitation coil, wherein the excitation coil is configured such that, in use, an excitation current flows in the same direction through each segment of the excitation coil and the or each pair of magnetoresistive segments is configured such that a bias current flows in opposite directions in each magnetoresistive segment of the pair.
  • the or each magnetoresistive element may be separated from a carrier substrate by an isolation layer, the thickness of the isolation layer being selected such that the product of the total resistance of the or each magnetoresistive element and the capacitance between the or each magnetoresistive element and the substrate is less than the reciprocal of the highest frequency in the spectrum of an excitation current carried by the excitation.coil.
  • FIG 4 a sensor layout according to a first embodiment of the invention is shown.
  • the coil segments are drawn next to the corresponding magnetoresistive segments of the sensor elements. It should be understood that in reality these two rows are above each other, although it is immaterial whether the magnetoresistive segments are above the coil segments or vice-versa.
  • the coil is split into two mirrored current branches.
  • Each of these two branches is arranged in the form of a meander and carries an equal current, I coil , which flows to a common ground terminal at their junction.
  • the first branch comprises coil segments 10a, 10b, 10c and 10d
  • the second branch comprises coil segments 11a, 11b, 11c and 11d.
  • the segments 10a - 10d and 11a - 11d in each branch are coupled together so that the excitation current flows in the same direction (as denoted by the arrow marked I coil ) through each segment.
  • the excitation current causes a magnetic field to be generated parallel to the plane in which the magnetoresistive elements lie.
  • each of the coil segments 10a - 10d and 11a - 11d lies a corresponding segment of a first and second magnetoresistive element.
  • the segments 12a - 12d of the first magnetoresistive element lie above corresponding coil segments 10a - 10d.
  • the segments 12a - 12d are coupled together by connecting elements 13a - 13d such that the bias current, I MR , flows in opposing directions in each of adjacent segments 12a - 12d of the first magnetoresistive element.
  • the segments 14a - 14d of the second magnetoresistive element lie above corresponding coil segments 11a - 11d.
  • the segments 14a - 14d are coupled together by connecting elements 15a - 15d such that the bias current, I MR , flows in opposing directions in each of adjacent segments 14a - 14d of the second magnetoresistive element.
  • connecting element 16 which is itself coupled to an a.c. ground point, typically a fixed d.c. potential such as 0V.
  • the first and second magnetoresistive elements are biased with opposite polarities so that the bias current flows in opposing directions in corresponding magnetoresistive segments in each of the two elements.
  • the bias current flows in opposite directions in segments 12d and 14d.
  • each segment 12a - 12d and 14a - 14d of the first and second sensor elements is drawn as a single piece for the sake of simplicity; but in fact, each segment may contain more than one sub-segment connected by short connection bars.
  • FIG 5 a schematic representation of the sensor of the first embodiment is shown.
  • the topology consists of two branches, as in Figure 4 .
  • the first branch comprises a first coil element 20a and the first magnetoresistive element 22a
  • the second branch comprises a second coil element 20b and the second magnetoresistive element 22b.
  • the coil elements 20a, 20b as well as the first and second magnetoresistive elements 22a, 22b are depicted next to each other as a row of resistors.
  • the excitation current is provided by current sources 21a and 21b, each of which provides a current of I coil .
  • current sources 21a and 21b each of which provides a current of I coil
  • the first and second magnetoresistive elements 22a and 22b are coupled together at one end, which is coupled to a.c. ground.
  • the a.c. ground does not necessarily have to be at a level of zero volts d.c. The requirement is simply that, for the frequencies present in the a.c. excitation current, the ground node can be regarded to be at zero voltage. For example, if the node is at a constant voltage of 10 V, it will still be grounded for the high frequency a.c. excitation current. Furthermore, the ground need not be coupled to a fixed potential point. If it is floating, the node may also be an a.c. ground (for example, due to symmetry in the layout).
  • a source 23 of d.c. bias current is connected across the other two ends of the first and second magnetoresistive elements 22a and 22b, which represent the output terminals of the sensor.
  • the output signal from the sensor is the voltage difference, V B - V A , between these two output terminals.
  • a requirement of the superheterodyne principle is that the first and second magnetoresistive elements 22a and 22b should react in the same way to the external field, H y , and the excitation field from the coil, indicated by the arrows in Figure 5 . That is, in this case, the resistance in both elements 22a and 22b should change synchronously.
  • This requirement is satisfied by the topology of Figure 5 because the coil current flows in the same direction for the two coil branches 20a and 20b. This generates an excitation magnetic field of the same direction in both the first and second magnetoresistive elements 22a and 22b with respect to the external field, H y .
  • Figure 6 shows the same circuit as Figure 5 with the parasitic capacitances and associated leakage currents highlighted (see the capacitors between the coil branches 20a and 20b and the first and second magnetoresistive elements 22a and 22b and the adjacent arrows).
  • both the coil branches and the magnetoresistive elements are essential.
  • the resistance of the first and second magnetoresistive elements between the ground terminal and their respective output terminals must be the same and each segment of the magnetoresistive elements must overlie a corresponding coil segment. This ensures that the leakage currents at either side are equal.
  • Both the magnetoresistive elements and the coil branches should be symmetrically arranged about the a.c. ground, and the coil current in each branch should be the same.
  • the sensor of the first embodiment also provides compensation for inductive coupling.
  • the mechanism for compensation is shown in Figure 7 .
  • the inductive coupling is represented by local voltage sources in the first and second magnetoresistive elements 22a and 22b. Since the currents in the coil branches 20a and 20b are in phase, so are the voltages generated in the first and second magnetoresistive elements 22a and 22b by inductive coupling.
  • the inductively-generated voltages are therefore the same in each of the first and second magnetoresistive elements 22a and 22b. They therefore cancel in the output signal V B - V A . This compensation has been confirmed by simulation.
  • the currents in the two coil branches 20a and 20b should be equal in amplitude and in-phase, and the coupling co-efficient (i.e. the mutual inductance) between each coil branch 20a and 20b and the associated magnetoresistive element 22a and 22b should be the same.
  • Figure 8 shows the layout of a second embodiment, which makes use of the differential superheterodyne principle.
  • the overall space occupied by the sensor is minimised while the matching between them (in terms of resistance) is maximized.
  • the same coil 31 is used to generate the excitation field for both sensor elements 30a and 30b.
  • the first sensor element 30a comprises four segments 32a, 32b, 32c and 32d, coupled together by connection elements 33a, 33b and 33c.
  • the segments 32a - 32d are coupled such that a d.c. bias current flows in opposing direction in adjacent segments.
  • the second sensor element 30b comprises four segments 34a, 34b, 34c and 34d, coupled together by connection elements 35a, 35b and 35c.
  • the segments 34a - 34d are coupled such that a d.c. bias current flows in opposing direction in adjacent segments.
  • segment 34a is coupled to an a.c. ground terminal, and one end of segment 32a is coupled to the ground terminal through a resistor 36.
  • resistor 36 At the other end of the first and second sensor elements 30a, 30b, one end of segment 32d is coupled to a first output terminal and one end of segment 34d is coupled to a second output terminal through resistor 37.
  • resistors 36 and 37 are the same and are chosen as explained below.
  • This arrangement of the coil 31 has two advantages. First, the fields generated for both the first and second magnetoresistive elements 30a, 30b are created by the same current flow. Therefore the phase matching between the generated fields is perfect. Second, all segments of the coil 31 are used, resulting in better power efficiency compared to, for example, the coil of Figure 1 , where the fields generated by the return segments of the coil 3 are not used.
  • ballast resistors 36, 37 of the same value R ballast are provided, as discussed above and shown in Figure 20.
  • the two ballast resistors 36, 37 can be integrated in the sensor die, or can be in the external readout circuit. The role of each of these resistors in assisting compensation for capacitive coupling is set out below.
  • the upper one of coil segments 38a will be considered.
  • the potential in the middle of the upper on of coil segments 38a is V 1
  • the potential in the middle of the corresponding segment 32a of the first magnetoresistive component is V a1 .
  • i b1 (V 1 -V d -V b1 ) ⁇ C.
  • V a1 would equal V b1 . If all leakage currents of all segments 32a - 32d and 34a - 34d of the first and second magnetoresistive elements 30a and 30b are summed up, the total leakage currents from the two sensor elements 30a and 30b would be unbalanced. Therefore, the compensation would not work.
  • the ballast resistor 36 reduces the voltage difference between the first segments 38a of the coil 31 and the segment 32a of the first magnetoresistive element 30a. To make the resistance of the two magnetoresistive elements 30a, 30b equal (for the balance of the readout circuit), another ballast resistor 37 is required, as shown, for the second magnetoresistive element 30b.
  • the two sensor elements 30a, 30b are interleaved: they wind over each other. In an alternative layout they could be placed next to each other, which would save on crossovers. However, the interleaved layout is preferred because spatial process variations would then affect sensor elements 30a, 30b in the same way, so the symmetry between the two elements 30a, 30b is maintained.
  • the coil current is split as it passes each adjacent pair of segments 32a - 32d and 34a - 34d of the sensor elements 30a, 30b. This is done by providing the parallel coil segments 38a, 38b, 38c and 38d. In a special case, when each sensor element consists of only one pair of segments, the current would not need to be split to minimise the number of traversals.
  • the advantage of such a layout is that with the same current, the field generated can be doubled, or in other words, to generate the same field, only half the current is required.
  • the power consumption for the coil can be reduced by a factor of two (the current reduces by a factor of two and the resistance increases by a factor of two; thus power consumption, being I 2 R, is reduced by a factor of two overall).
  • the two ballast resistors are still required.
  • FIG 9 an alternative sensor layout is shown, using the differential superheterodyne principle.
  • the topology is similar to the topology in Figure 4 , except for the directions of the currents in the coil and the magnetoresistive elements for the lower half of the circuit.
  • the sensor of Figure 9 comprises a top set of coil segments 100a, 100b, 100c and 100d and a bottom set of coil segments 101a, 101b, 101c and 101d.
  • the segments 100d and 101d are coupled to a ground terminal at their junction.
  • the sensor also comprises two magnetoresistive elements.
  • the first element is made up of four segments 102a, 102b, 102c and 102d coupled together by connecting elements 103a, 103b, 103c and 103d.
  • the second element is made up of segments 104a, 104b, 104c and 104d coupled together by connecting elements 105a, 105b, 105c and 105d.
  • the two elements are coupled by connecting element 106, which couples segments 102d and 104d. Connecting element 106 is also coupled to ground.
  • a current I MR flows through segments 12a to 12d to the ground terminal, and a current I MR flows from the ground terminal through segments 14d to 14a.
  • respective currents I MR flow through each set of segments 102a to 102d and 104a to 104d to the ground terminal.
  • the current I coil flows in the same direction (i.e. left-to-right or right-to-left) at any given moment in time in all of the segments 10a to 10d and 11a to 11d.
  • the situation is different.
  • the coil current runs in the opposite direction to the bottom half segments 101a to 101d.
  • FIGS 10a and 10b show schematics of two variants of the third embodiment.
  • the first and second magnetoresistive elements 43a and 43b are supplied with d.c. bias current by respective sources 44a and 44b coupled between a ground terminal and a respective output terminal.
  • the output from the first magnetoresistive elements 43a is the voltage V A
  • the output from the second magnetoresistive elements 43b is the voltage V B .
  • the output from the sensor overall, is the difference between these, V A -V B .
  • the current flowing through the two sets of coil segments 40a and 40b causes a magnetic field to be generated as shown by the arrows in Figures 10a and 10b .
  • the currents in the two sets of coil segments 40a and 40b are therefore mutually out-of-phase, meaning that at any particular moment they flow in opposite directions.
  • the bias currents in the two magnetoresistive elements 43a and 43b have opposite directions too.
  • Figure 11 illustrates the compensation mechanism for dealing with capacitive coupling in the second embodiment.
  • the circuit is the same as in Figure 10a , although the leakage currents due to capacitive coupling and the parasitic capacitance have been highlighted.
  • the resistance of the two magnetoresistive elements 43a, 43b and their coupling with the coil must be the same.
  • Both the magnetoresistive elements and the coil branches should be symmetrically arranged about the a.c. ground, and the coil current in each branch should be the same.
  • the coil current in the segments that couple with the first magnetoresistive element must be out of phase with the current in those segments that couple with the second magnetoresistive element as discussed already.
  • Figure 12 illustrates the cancellation of inductive coupling.
  • Inductive coupling generates local voltages in the magnetoresistive elements 43a, 43b where the magnetoresistive segments overlie corresponding segments of the coil.
  • the direction of the voltage drops is determined by the direction of the coil current. Since the coil current has opposite directions in the two halves of the circuit, the induced voltages in each of the first and second magnetoresistive elements 43a, 43b have opposite polarities.
  • the total voltage contribution to the output voltage, V B - V A is therefore zero.
  • the effectiveness of this method has been shown in circuit simulation.
  • the currents in the two coil branches 40a and 40b should be equal in amplitude and exactly out-of-phase, and the coupling co-efficient (i.e. the mutual inductance) between each coil branch 40a and 40b and the associated magnetoresistive element 43a and 43b should be the same.
  • a fourth embodiment of the invention shown in Figure 13 results in compensation of inductive coupling.
  • an even number of sensor segments is required in a magnetoresistive sensor element.
  • two segments 50a and 50b are shown for ease of illustration. Many more would likely be used in a practical example.
  • a corresponding coil segment 51a and 51b lies beneath (or above) segments 50a and 50b.
  • the coil segments 51a and 51b are arranged so that an excitation current flows in the same direction through each segment 51a and 51b.
  • the magnetoresistive segments 50a and 50b are configured such that a bias current flows in opposite directions in each magnetoresistive segment 50a and 50b.
  • coil segments 51a and 51b could be connected in parallel. This would require less space, but comes with the disadvantage that it requires twice as much current to generate the same magnetic field.
  • the capacitance of the substrate on which the coil segments 51a, 51b and magnetoresistive segments 50a, 50b are placed can affect the effectiveness of the compensation between rows. This occurs if the excitation current in the coil has a spectral content with frequencies of the same order of magnitude as 1/( R MR C sub ) or higher, where R MR and C sub are the resistance of one magnetoresistive segment and C sub is the total capacitance of this segment to the substrate. It also occurs if the substrate has a forced potential (i.e. it is not floating). Such a potential can either be forced by direct connection to a fixed potential or it may be forced by the voltages on the magnetoresistive element and on the coil (e.g. symmetric layouts may force a virtual ground potential on the substrate).
  • the capacitance to the substrate can be decreased such that 1/( R MR C sub ) is well above the highest frequency occurring in the excitation current.
  • Such a decreased capacitance can be obtained by increasing the thickness of the isolation layer between the magnetoresistive element and the carrier substrate.

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  • Hall/Mr Elements (AREA)

Claims (15)

  1. Capteur magnéto-résistif comprenant un premier et un deuxième éléments magnéto-résistifs, chacun d'eux étant raccordé par une première extrémité correspondante à une borne de masse commune et comprenant un ou plusieurs segments magnéto-résistifs (12a-12d, 14a-14d), chacun d'eux étant superposé à un segment correspondant (10a-10d, 11a-11d) d'une bobine d'excitation, dans lequel la résistance des segments magnéto-résistifs (12a-12d, 14a-14d) dans chacun des premier et deuxième éléments magnéto-résistifs est la même et la résistance des segments de la bobine d'excitation correspondant au premier élément magnéto-résistif est égale à la résistance des segments de la bobine d'excitation correspondant au deuxième élément magnéto-résistif, caractérisé par le fait que l'élément magnéto-résistif ou chaque élément magnéto-résistif est séparé d'un substrat support par une couche d'isolation, l'épaisseur de la couche d'isolation étant sélectionnée de telle sorte que le produit de la résistance totale de l'élément magnéto-résistif ou de chaque élément magnéto-résistif et de la capacité entre l'élément magnéto-résistif ou chaque élément magnéto-résistif et le substrat est inférieur à l'inverse de la résistance la plus élevée dans le spectre d'un courant d'excitation porté par la bobine d'excitation.
  2. Capteur magnéto-résistif comprenant un premier et un deuxième élément magnéto-résistif, chacun d'eux étant raccordé par une première extrémité correspondante à une borne de masse commune et comprenant un ou plusieurs segments magnéto-résistifs (12a-12d, 14a-14d), chacun d'eux étant superposé à un segment correspondant (10a-10d, 11a-11d) d'une bobine d'excitation, dans lequel la résistance des segments magnéto-résistifs (12a-12d, 14a-14d) dans chacun des premier et deuxième éléments magnéto-résistifs est la même et la résistance des segments de la bobine d'excitation correspondant au premier élément magnéto-résistif est égale à la résistance des segments de la bobine d'excitation correspondant au deuxième élément magnéto-résistif, caractérisé par le fait que la bobine d'excitation comporte un premier et un deuxième élément de bobine d'excitation raccordés électriquement en parallèle, les segments magnéto-résistifs (12a-12d, 14a-14d) du premier et du deuxième éléments magnéto-résistif étant superposés aux éléments de la première et de la deuxième bobine d'excitation correspondants.
  3. Capteur magnéto-résistif comprenant un premier et un deuxième élément magnéto-résistif, chacun d'eux étant raccordé par une première extrémité correspondante à une borne de masse commune et comprenant un ou plusieurs segments magnéto-résistifs (12a-12d, 14a-14d), chacun d'eux étant superposé à un segment correspondant (10a-10d, 11a-11d) d'une bobine d'excitation, dans lequel la résistance des segments magnéto-résistifs (12a-12d, 14a-14d) dans chacun des premier et deuxième éléments magnéto-résistifs est la même et la résistance des segments de la bobine d'excitation correspondant au premier élément magnéto-résistif est égale à la résistance des segments de la bobine d'excitation correspondant au deuxième élément magnéto-résistif, caractérisé par le fait que chacun des éléments parmi le premier et le deuxième élément magnéto-résistif comporte le même nombre de segments magnéto-résistifs (12a-12d, 14a-14d) configuré de telle manière que des segments magnéto-résistifs adjacents (12a-12d, 14a-14d) dans le même élément magnéto-résistif conduisent un courant de polarisation dans des directions opposées, en cours de fonctionnement, et par le fait que la bobine d'excitation est configurée de telle manière que chacun de ses segments (10a-10d, 11a-11d) conduit un courant d'excitation dans la même direction, en cours de fonctionnement.
  4. Capteur magnéto-résistif selon l'une quelconque des revendications précédentes, dans lequel le premier et le deuxième élément magnéto-résistif sont identiques.
  5. Capteur magnéto-résistif selon l'une quelconque des revendications précédentes, dans lequel la deuxième extrémité de chacun des éléments parmi le premier et le deuxième élément magnéto-résistif est raccordée à des première et deuxième bornes de sortie respectives.
  6. Capteur magnéto-résistif selon la revendication 5, dans lequel une source de courant de polarisation(23) est raccordée entre la première et la deuxième borne de sortie pour fournir un courant de polarisation dans le premier et le deuxième élément magnéto-résistif.
  7. Capteur magnéto-résistif selon la revendication 5, dans lequel une première et une deuxième source de courant de polarisation (44a, 44b) sont respectivement raccordées entre la borne de masse commune et la première et la deuxième borne de sortie correspondante, pour fournir un courant de polarisation dans le premier et le deuxième élément magnéto-résistif.
  8. Capteur magnéto-résistif selon l'une quelconque des revendications précédentes, dans lequel la bobine d'excitation est raccordée par chacune des extrémités à une source de courant d'excitation (41) pour fournir un courant d'excitation dans la bobine.
  9. Capteur magnéto-résistif selon l'une quelconque des revendications 1 à 7, dans lequel la bobine d'excitation est raccordée par un point milieu de sa longueur à une borne de masse.
  10. Capteur magnéto-résistif selon la revendication 9, dans lequel la première et la deuxième des sources de courant d'excitation (41a, 41b) sont raccordées entre la borne de masse et les extrémités correspondantes de la bobine d'excitation pour fournir un courant d'excitation dans la bobine.
  11. Capteur magnéto-résistif selon l'une quelconque des revendications 1, 2 ou 4 à 9, dans lequel le premier et le deuxième élément magnéto-résistif (30a, 30b) comprenant le même nombre pair de segments magnéto-résistifs (32a-32d, 34a-34d) disposés en paires, les segments magnéto-résistifs (32a-32d, 34a-34d) étant configurés de telle sorte que chaque segment (32a-32d, 34a-34d) dans une paire conduit un courant de polarisation dans des directions opposées, en cours d'utilisation, et la bobine d'excitation 31 est configurée de telle sorte que les segments (38a, 38b) correspondant aux segments magnéto-résistifs (32a-32d) du premier élément magnéto-résistif (30a) conduisent, en cours d'utilisation, un courant dans une direction opposée aux segments magnéto-résistifs (34a-34d) du deuxième élément magnéto-résistif (30b).
  12. Capteur magnéto-résistif selon la revendication 11 lorsque celle-ci dépend de la revendication 5, dans lequel la première extrémité du premier élément magnéto-résistif (30a) est raccordée à la borne de masse commune par l'intermédiaire d'une première résistance ballast (36) et la deuxième extrémité du deuxième élément magnéto-résistif (30b) est raccordée à la deuxième borne de sortie par l'intermédiaire d'une deuxième résistance ballast (37).
  13. Capteur magnéto-résistif selon la revendication 12, dans lequel la première et la deuxième résistance ballast (36, 37) ont la même valeur de résistance.
  14. Capteur magnéto-résistif comprenant un élément magnéto-résistif, raccordé par une première extrémité à une borne de masse et comprenant une ou plusieurs paires de segments magnéto-résistifs (50a, 50b), recouvrant chacun un élément correspondant (51a, 51b) d'une bobine d'excitation, la paire ou chacune des paires de segments magnéto-résistifs (50a, 50b) étant configurée de telle sorte qu'un courant de polarisation s'écoule dans des directions opposées dans chaque segment magnéto-résistif (50a, 50b) de la paire, caractérisé par le fait que la bobine d'excitation est configurée de telle manière que, en cours d'utilisation, un courant d'excitation s'écoule dans la même direction à travers chaque segment (51a, 51b) de la bobine d'excitation.
  15. Capteur magnéto-résistif selon l'une quelconque des revendications 2 à 14, dans lequel l'élément magnéto-résistif ou chaque élément magnéto-résistif est séparé d'un substrat support par une couche d'isolation, l'épaisseur de la couche d'isolation étant sélectionnée de telle sorte que le produit de la résistance totale de l'élément magnéto-résistif ou de chaque élément magnéto-résistif et de la capacité entre l'élément magnéto-résistif ou chaque élément magnéto-résistif et le substrat est inférieur à l'inverse de la résistance la plus élevée dans le spectre d'un courant d'excitation porté par la bobine d'excitation.
EP10171416.0A 2010-07-30 2010-07-30 Capteur magnéto-résistif Not-in-force EP2413154B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP10171416.0A EP2413154B1 (fr) 2010-07-30 2010-07-30 Capteur magnéto-résistif
US13/191,730 US8680857B2 (en) 2010-07-30 2011-07-27 Magnetoresistive sensor
CN201110213647.9A CN102410848B (zh) 2010-07-30 2011-07-28 磁阻传感器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP10171416.0A EP2413154B1 (fr) 2010-07-30 2010-07-30 Capteur magnéto-résistif

Publications (2)

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EP2413154A1 EP2413154A1 (fr) 2012-02-01
EP2413154B1 true EP2413154B1 (fr) 2013-04-17

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EP (1) EP2413154B1 (fr)
CN (1) CN102410848B (fr)

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EP2778704B1 (fr) * 2013-03-11 2015-09-16 Ams Ag Capteur de champ magnétique
CN103384141B (zh) * 2013-07-24 2015-05-06 江苏多维科技有限公司 一种磁阻混频器
US9013838B1 (en) * 2013-10-01 2015-04-21 Allegro Microsystems, Llc Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same
US8885302B1 (en) * 2013-10-01 2014-11-11 Allegro Microsystems, Llc Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same
US8848320B1 (en) * 2013-10-01 2014-09-30 Allegro Microsystems, Llc Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same
US10557873B2 (en) * 2017-07-19 2020-02-11 Allegro Microsystems, Llc Systems and methods for closed loop current sensing
DE102020130296B4 (de) * 2019-12-11 2025-06-05 Tdk Corporation Magnetfeld-detektionsvorrichtung und stromerfassungsgerät
CN111277231B (zh) * 2020-02-18 2022-02-18 江苏多维科技有限公司 一种增益可控的磁阻模拟放大器
JP7327597B2 (ja) * 2020-03-18 2023-08-16 Tdk株式会社 磁場検出装置および電流検出装置
JP7106591B2 (ja) * 2020-03-18 2022-07-26 Tdk株式会社 磁場検出装置および電流検出装置
WO2022176523A1 (fr) * 2021-02-16 2022-08-25 株式会社村田製作所 Dispositif capteur
CN121368337B (zh) * 2025-12-22 2026-03-17 苏州凌存科技有限公司 电子设备、磁阻器件及其制备方法

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Publication number Publication date
US8680857B2 (en) 2014-03-25
CN102410848A (zh) 2012-04-11
US20120025819A1 (en) 2012-02-02
EP2413154A1 (fr) 2012-02-01
CN102410848B (zh) 2015-02-04

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