EP2416920A1 - Procédé et dispositif pour irradier par énergie laser une surface de matière semi-conductrice - Google Patents

Procédé et dispositif pour irradier par énergie laser une surface de matière semi-conductrice

Info

Publication number
EP2416920A1
EP2416920A1 EP10711398A EP10711398A EP2416920A1 EP 2416920 A1 EP2416920 A1 EP 2416920A1 EP 10711398 A EP10711398 A EP 10711398A EP 10711398 A EP10711398 A EP 10711398A EP 2416920 A1 EP2416920 A1 EP 2416920A1
Authority
EP
European Patent Office
Prior art keywords
beam spot
spot size
size
laser
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10711398A
Other languages
German (de)
English (en)
Other versions
EP2416920B1 (fr
Inventor
Julien Venturini
Bruno Godard
Cyril Dutems
Marc Bucchia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laser Systems and Solutions of Europe SAS
Original Assignee
EXCICO FRANCE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EXCICO FRANCE filed Critical EXCICO FRANCE
Priority to EP10711398.7A priority Critical patent/EP2416920B1/fr
Publication of EP2416920A1 publication Critical patent/EP2416920A1/fr
Application granted granted Critical
Publication of EP2416920B1 publication Critical patent/EP2416920B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/042—Automatically aligning the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam

Definitions

  • the present invention relates to a method of irradiating a semiconductor material surface by means of a laser. Further, it relates to a laser apparatus for irradiating a semiconductor material surface.
  • Laser irradiation of semiconductor material surfaces is well known for applications such as thermal annealing of amorphous silicon to obtain re-crystallization, and dopant activation. This technique offers significant advantages over a conventional heating process by enabling a very fast heat treatment and shallow depth of the heated region.
  • a general problem of conventional laser irradiation processes for semiconductor applications is that due to the high energy density required for the thermal process and the low output energy of traditionally available laser sources, the laser spot size is much smaller than the size of a die, also called a chip or device. As a consequence, the laser spot has to step over or scan the die to cover the full die, resulting in several disadvantages
  • a first disadvantage is that, if the laser spot (b) scans or steps over the die (a), successive laser spots will overlap at some portions (c) of the die, leading to non- uniformities in dopant activation rate or depth and in surface quality.
  • Another disadvantage is that, in case multiple laser pulses on the same surface area are needed, the laser spots scans or steps over the surface with very high overlap in order to average multiple laser pulses on each point of the processed surface area, resulting in limited production rate and periodic non-uniformities, so called moire- patterns.
  • Another general problem is that dies for different types of applications usually have different sizes, and further that in some applications only parts of the die have to be irradiated. It is well known by the skilled person that, in order to be able to process different die sizes or parts of dies with limited overlap, the beam spot is shaped by a variety of masks with different sizes. Since consequently the mask has to be changed and tuned each time another size is needed, manufacturing flexibility is severely limited and downtimes may be significant.
  • WO 01/61407 (Hawryluk et al.) describes a laser irradiation apparatus using a variable aperture stop for defining the size of the exposure field.
  • the laser light source needed to obtain satisfying uniformity needs to be a solid-state laser with more than 1000 spatial modes, which is not a currently commercially available laser source.
  • the laser irradiation method and apparatus according to the present invention which as a first object may provide the ability to process semiconductor material layers obtaining acceptable uniformity within die and within wafer, while keeping acceptable production rate, and manufacturing flexibility.
  • the present invention may provide a reduction of overlapping effects and attenuation regions.
  • the present invention may provide the ability to generate a beam with flexible image shape on the material layer surface.
  • the present invention may provide the ability to irradiate at lower temperatures and maximize the conversion of laser energy into heat.
  • the present invention meets the above objects by variably matching the laser beam spot size to the selected region size.
  • the present invention is directed to a method for irradiating semiconductor material comprising:
  • adjusting the beam spot size comprises variably matching the beam spot size to the selected region size.
  • the present invention is directed to an apparatus for irradiating semiconductor material comprising:
  • an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser having a laser beam spot size to the selected region having a region size;
  • the means for adjusting the laser beam spot size are adapted for variably matching the laser beam spot size to the selected region size.
  • FIG 1 illustrates a prior art method.
  • FIG 2 illustrates another prior art method.
  • FIG 3 illustrates a method in accordance with the present invention.
  • FIG 4 illustrates a preferred irradiation energy distribution over a full die in accordance with the present invention.
  • FIG 5 illustrates a variable aperture
  • FIG 6 illustrates an optical system with variable image magnification.
  • adjusting the beam spot size comprises variably matching the beam spot size to the selected region size.
  • the method may provide acceptable uniformity within die and within wafer due to a reduction of overlapping effects and attenuation regions. Moreover, the method may provide acceptable production rate and manufacturing flexibility by the ability to generate a beam spot with flexible shape and size on the material layer surface.
  • the semiconductor material layer may be of any material suitable for semiconductor applications such as, but not limited to undoped silicon, doped silicon, implanted silicon, crystalline silicon, amorphous silicon, silicon germanium, germanium nitride, Hl-V compound semiconductors such as gallium nitride, silicon carbide, and the like.
  • matching the beam spot size may be done by varying the size and shape of a variable aperture whose image is formed on the material layer surface.
  • a variable aperture whose image is formed on the material layer surface.
  • such aperture is a hole or an opening through which the laser beam passes and which defines the shape and size of the beam spot on the selected region.
  • the size and/or shape of the beam spot can be matched to the size ad/or shape of the selected region.
  • Such variable aperture may be equipped with blades which position can be variably adjusted, as illustrated in FIG 5.
  • a fine adjustment of the aperture may be needed to correct inaccuracies and to exactly matching the spot size with the selected region.
  • This fine adjustment may be performed by visualizing the beam spot on the material layer surface using a camera, measuring the spot size and adjusting the aperture's opening size and shape.
  • the blades positions may be fine-tuned to reach the target spot size with the desired accuracy.
  • matching the beam spot size may be done by an optical system with variable image magnification.
  • optical system is adapted for creating the image of the aperture on the wafer with variable magnification.
  • the method may comprise alignment of the beam spot in XYZ-direction with respect to the selected region.
  • the selected region may be at least one full die.
  • the full die may be treated by one laser pulse.
  • the die could receive multiple laser pulses, all covering the full die.
  • the selected region may cover multiple dies. In FIG is shown that irradiating one or more full dies may significantly contribute to increased uniform irradiation energy distribution over the die (e) and to reduction of overlapping effects (c), resulting in increased process uniformity.
  • a method in accordance with the present invention may further comprise homogenizing the laser beam before matching the beam spot size to the selected region size. Homogenizing the laser beam will obviously contribute to increasing process uniformity.
  • an apparatus for irradiating semiconductor material comprising:
  • an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser having a laser beam spot size to the selected region having a region size;
  • the means for adjusting the laser beam spot size are adapted for variably matching the laser beam spot size to the selected region size.
  • the excimer laser may be any excimer laser whose wavelength, energy and pulse duration is adapted to the process, preferably a xenon chloride excimer laser.
  • the wavelength of the excimer laser may be in the range of 190 nm to 480 nm due to the high energy absorption of silicon at those wavelengths, and preferably 308 nm.
  • the laser energy may be in the range of 5 Joules to 25 Joules.
  • the laser discharge volume is optimized to typically 10 cm (inter electrodes spacing) x 7 to 10 cm (discharge width) x 100 to 200 cm (discharge length).
  • the pulse duration corresponds to an optimum between fast heating for reducing diffusion of dopants and relatively slow cool down for reducing the formation of defects, and may be in the range of 100 ns to 1000 ns, preferably between 100 ns and 300 ns.
  • the excimer laser may be adapted to produce a large area output beam of more than 80 cm 2 , preferably 100 cm 2 .
  • the excimer laser may be adapted to produce a laser beam with an energy density between 1 and 10 J/cm 2 .
  • the means for matching the laser beam spot size may comprise a variable aperture.
  • the variable aperture may not only define the beam spot size and/or shape, but may significantly contribute to obtain sharp image edges (FIG 4, f) through imaging of this aperture by a high resolution imaging system thereby reducing attenuation regions and overlapping effects.
  • the means for matching the laser beam spot size comprises an optical system with variable image magnification.
  • the distance between a first lens or a first group of lenses (objective lens, 1 st group) and a second lens or second group of lenses (objective lens, 2nd group) is adjustable by means of a delay line to adjust the magnification of the system (typically from 4X to 8X).
  • the optical system with variable image magnification may be used in or without combination of a variable aperture.
  • the beam spot size on the selection region may be adjusted from 1 to 4,5 cm 2 in rectangular shape.
  • An apparatus according to the invention may further comprise means for aligning the beam spot in XYZ-direction with the selected region.
  • the depth of focus may be as long as possible and preferably more than 100 micrometers in order to avoid the need for very accurate, complex and expensive position adjustment along the focus.
  • the angle of incidence of the laser beam on the selected region may be at an angle (typically 5°) with respect to the plane orthogonal to the semiconductor material layer in order to avoid that the reflected light off the surface is injected back into the optical system.
  • An apparatus according to the present invention may further comprise a beam homogenizer positioned before the means for adjusting the laser beam spot size.
  • An apparatus may further comprise a pattern recognition system.
  • a pattern recognition system may comprise a camera, mechanically linked to a stage for holding the semiconductor material, and positioned above the material layer surface.
  • the image from the camera may be processed to locate several (typically 3) alignment marks that have been etched on the semiconductor material. The alignment marks provide the precise location of the semiconductor material in the coordinate system the apparatus.
  • the apparatus in accordance with the present invention may be used for making semiconductor material or devices, such as but not limited to CMOS image sensors and 3D memories.
  • the method and apparatus of the present invention may be very useful for back side illuminated CMOS image sensors, where light is collected on the back side of the device while the readout/charge collection is performed on the front side.
  • Back side illumination requires back side dopant activation with very good uniformity of activation rate and depth.
  • the activation process has to maintain a very high quality of surface to maintain image quality over the whole sensor.
  • it may be possible to irradiate the back side of one or more full sensor by one pulse, thereby avoiding scanning or stepping with overlap and achieving the required sensor uniformity.
  • Step 0 Loading and roughly positioning of the wafer with respect to the beam spot
  • Step 1 Selection of irradiation parameters:
  • the irradiation parameters are selected based on
  • the energy density required on the specific wafer substrate e.g. 2 J/cm 2
  • Step 2 Adjustment of the system magnification:
  • Step 3 Adjustment of the mask dimension:
  • the aperture blades positions are adjusted to achieve the required beam size.
  • Step 4 Positioning of the laser spot with respect to the wafer to be treated:
  • a pattern recognition step will locate the exact position of 3 alignment marks on the wafer with respect to the wafer stage coordinate system
  • the laser irradiates the first die with the required energy density.
  • the irradiation energy is controlled by the adjusting the laser charging voltage and using variable attenuators in the beam path.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

L'invention concerne un procédé d'irradiation d'une matière semi-conductrice, qui comprend les étapes consistant à: sélectionner une région (a) d'une surface de couche de matière semi-conductrice, la région (a) comportant une taille de région; irradier la région (a) de ladite surface à l'aide d'un laser à excimère comportant une taille (b) de tache de faisceau; et régler la taille (b) de la tache du faisceau, le réglage de la taille (b) de la tache du faisceau comportant une mise en correspondance variable de la taille (b) de la tache du faisceau par rapport à la taille de la région (a) sélectionnée. De plus, l'invention concerne un dispositif d'irradiation d'une matière semi-conductrice, qui comprend : un laser à excimère pour irradier une région (a) sélectionnée d'une surface de couche semi-conductrice, le laser comportant une taille (b) de tache de faisceau adaptée à la région (a) sélectionnée comportant une taille de région; et des moyens de réglage de la taille de la tache du faisceau, lesdits moyens de réglage de la taille (b) de la tache du faisceau permettant de faire correspondre de manière variable la taille (b) de la tache du faisceau à la taille (a) de la région sélectionnée.
EP10711398.7A 2009-04-07 2010-03-29 Procédé et appareil pour l'irradiation d'une surface de matériau semi-conducteur avec de l'énergie laser Active EP2416920B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10711398.7A EP2416920B1 (fr) 2009-04-07 2010-03-29 Procédé et appareil pour l'irradiation d'une surface de matériau semi-conducteur avec de l'énergie laser

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09305290A EP2239084A1 (fr) 2009-04-07 2009-04-07 Procédé et appareil pour l'irradiation d'une surface de matériau semi-conducteur avec de l'énergie laser
PCT/EP2010/054135 WO2010115763A1 (fr) 2009-04-07 2010-03-29 Procédé et dispositif pour irradier par énergie laser une surface de matière semi-conductrice
EP10711398.7A EP2416920B1 (fr) 2009-04-07 2010-03-29 Procédé et appareil pour l'irradiation d'une surface de matériau semi-conducteur avec de l'énergie laser

Publications (2)

Publication Number Publication Date
EP2416920A1 true EP2416920A1 (fr) 2012-02-15
EP2416920B1 EP2416920B1 (fr) 2023-11-15

Family

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EP09305290A Withdrawn EP2239084A1 (fr) 2009-04-07 2009-04-07 Procédé et appareil pour l'irradiation d'une surface de matériau semi-conducteur avec de l'énergie laser
EP10711398.7A Active EP2416920B1 (fr) 2009-04-07 2010-03-29 Procédé et appareil pour l'irradiation d'une surface de matériau semi-conducteur avec de l'énergie laser

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EP09305290A Withdrawn EP2239084A1 (fr) 2009-04-07 2009-04-07 Procédé et appareil pour l'irradiation d'une surface de matériau semi-conducteur avec de l'énergie laser

Country Status (8)

Country Link
US (1) US9700959B2 (fr)
EP (2) EP2239084A1 (fr)
JP (2) JP2012522646A (fr)
KR (1) KR20120004514A (fr)
CN (1) CN102413986A (fr)
SG (2) SG175029A1 (fr)
TW (1) TWI512794B (fr)
WO (1) WO2010115763A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2881784B2 (ja) 1988-11-29 1999-04-12 アイシン精機株式会社 ミシンの送り量制御装置
CN102466963A (zh) * 2010-11-12 2012-05-23 北京京东方光电科技有限公司 一种掩膜版及一种掩膜曝光的方法
CN104603954B (zh) 2011-11-23 2017-10-13 艾柯西柯集团股份有限公司 用于形成金属硅化物层的方法
EP2770544A1 (fr) 2013-02-21 2014-08-27 Excico Group Procédé de formation de couches de siliciure métallique
EP2804218A1 (fr) * 2013-05-15 2014-11-19 Excico Group NV Procédé de formation de couches de siliciure métallique
CN107578991A (zh) * 2014-07-21 2018-01-12 应用材料公司 扫描脉冲退火装置及方法
CN107092166B (zh) * 2016-02-18 2019-01-29 上海微电子装备（集团）股份有限公司 曝光系统、曝光装置及曝光方法
EP3514821B1 (fr) * 2018-01-18 2020-05-27 Laser Systems & Solutions of Europe Procédé d'irradiation laser d'un dispositif semi-conducteur à motifs
CN108681214B (zh) * 2018-05-21 2019-08-13 中国科学院上海光学精密机械研究所 通过改变扩束比例实现跨尺度光刻或多分辨率成像的方法
JP7307001B2 (ja) * 2019-06-17 2023-07-11 東レエンジニアリング株式会社 レーザ加工装置および方法、チップ転写装置および方法
TWI872141B (zh) * 2020-03-17 2025-02-11 新加坡商星科金朋私人有限公司 製造半導體裝置之方法和半導體製造裝置
US11929334B2 (en) * 2020-03-17 2024-03-12 STATS ChipPAC Pte. Ltd. Die-beam alignment for laser-assisted bonding
US11909091B2 (en) 2020-05-19 2024-02-20 Kymeta Corporation Expansion compensation structure for an antenna
EP3970899B1 (fr) * 2020-09-18 2023-11-22 Laser Systems & Solutions of Europe Procédé et système d'irradiation uniforme d'un cadre de substrat traité ayant plusieurs cadres
US12243745B2 (en) 2022-02-07 2025-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Dynamic laser-assisted etching
US20240222127A1 (en) * 2022-12-29 2024-07-04 Hua Hsu Silicon Materials Co., Ltd. Method for wafer treatment

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61152069A (ja) * 1984-12-26 1986-07-10 Hitachi Ltd 半導体装置の製造方法
EP0251280A3 (fr) * 1986-06-30 1989-11-23 Nec Corporation Procédé de déplacement d'atomes d'impuretés en tranches semi-conductrices utilisant un faisceau de laser
JPH03253035A (ja) * 1990-03-02 1991-11-12 Nec Corp 半導体ウェハーの裏面歪場形成装置
JPH04356393A (ja) * 1991-05-31 1992-12-10 Hitachi Ltd レーザ加工光学系及びレーザ加工方法
JPH0536840A (ja) * 1991-07-29 1993-02-12 Hitachi Ltd Ｌｓｉ配線の修正方法及びその装置
JP3326654B2 (ja) * 1994-05-02 2002-09-24 ソニー株式会社 表示用半導体チップの製造方法
US6559465B1 (en) * 1996-08-02 2003-05-06 Canon Kabushiki Kaisha Surface position detecting method having a detection timing determination
US5868950A (en) * 1996-11-08 1999-02-09 W. L. Gore & Associates, Inc. Method to correct astigmatism of fourth yag to enable formation of sub 25 micron micro-vias using masking techniques
JP2000091604A (ja) * 1998-09-10 2000-03-31 Showa Denko Kk 多結晶半導体膜、光電変換素子及びこれらの製造法
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
JP2000208769A (ja) * 1999-01-08 2000-07-28 Sony Corp 薄膜半導体装置の製造方法及びレ―ザ照射装置
JP4403599B2 (ja) * 1999-04-19 2010-01-27 ソニー株式会社 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法
JP2001044133A (ja) * 1999-08-02 2001-02-16 Sharp Corp レーザ照射方法及び半導体装置の製造方法
JP4701467B2 (ja) * 1999-09-22 2011-06-15 ソニー株式会社 多結晶膜の製造方法および半導体装置の製造方法
US6366308B1 (en) 2000-02-16 2002-04-02 Ultratech Stepper, Inc. Laser thermal processing apparatus and method
JP2002231619A (ja) * 2000-11-29 2002-08-16 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
US6809023B2 (en) * 2001-04-06 2004-10-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device having uniform crystal grains in a crystalline semiconductor film
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
TWI289896B (en) * 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
JP2003197526A (ja) * 2001-12-28 2003-07-11 Seiko Epson Corp 半導体装置の製造方法、半導体装置、表示装置、および電子機器
KR100525443B1 (ko) * 2003-12-24 2005-11-02 엘지.필립스 엘시디 주식회사 결정화 장비 및 이를 이용한 결정화 방법
JP2005259981A (ja) * 2004-03-11 2005-09-22 Advanced Lcd Technologies Development Center Co Ltd 結晶化方法及び結晶化装置
JP2005294630A (ja) * 2004-04-01 2005-10-20 Seiko Epson Corp 半導体装置、電気光学装置、集積回路及び電子機器
US8525075B2 (en) * 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP2005340466A (ja) * 2004-05-26 2005-12-08 Seiko Epson Corp 半導体装置、電気光学装置、集積回路及び電子機器
US7425471B2 (en) * 2004-06-18 2008-09-16 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
KR101097915B1 (ko) 2005-02-07 2011-12-23 삼성전자주식회사 레이저 장치 및 이를 이용한 박막트랜지스터의 제조방법
JP4713185B2 (ja) * 2005-03-11 2011-06-29 株式会社日立ハイテクノロジーズ 異物欠陥検査方法及びその装置
US7209216B2 (en) * 2005-03-25 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing dynamic correction for magnification and position in maskless lithography
JP5019767B2 (ja) * 2005-03-31 2012-09-05 株式会社半導体エネルギー研究所 光学素子および光照射装置
US7433568B2 (en) * 2005-03-31 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Optical element and light irradiation apparatus
US7811911B2 (en) * 2006-11-07 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
US7800081B2 (en) * 2007-11-08 2010-09-21 Applied Materials, Inc. Pulse train annealing method and apparatus

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TW201042710A (en) 2010-12-01
JP2016006882A (ja) 2016-01-14
EP2416920B1 (fr) 2023-11-15
JP2012522646A (ja) 2012-09-27
KR20120004514A (ko) 2012-01-12
JP6312636B2 (ja) 2018-04-18
US9700959B2 (en) 2017-07-11
EP2239084A1 (fr) 2010-10-13
SG175029A1 (en) 2011-11-28
WO2010115763A1 (fr) 2010-10-14
US20120171876A1 (en) 2012-07-05
TWI512794B (zh) 2015-12-11
SG10201401316UA (en) 2014-07-30

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