EP2463410A3 - Elektrochemisches Ätzen von Halbleitern - Google Patents

Elektrochemisches Ätzen von Halbleitern Download PDF

Info

Publication number
EP2463410A3
EP2463410A3 EP11192951.9A EP11192951A EP2463410A3 EP 2463410 A3 EP2463410 A3 EP 2463410A3 EP 11192951 A EP11192951 A EP 11192951A EP 2463410 A3 EP2463410 A3 EP 2463410A3
Authority
EP
European Patent Office
Prior art keywords
semiconductors
electrochemical etching
semiconductor
etched
bifluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP11192951.9A
Other languages
English (en)
French (fr)
Other versions
EP2463410A2 (de
EP2463410B1 (de
Inventor
Gary Hamm
Jason A. Reese
George R. Allardyce
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of EP2463410A2 publication Critical patent/EP2463410A2/de
Publication of EP2463410A3 publication Critical patent/EP2463410A3/de
Application granted granted Critical
Publication of EP2463410B1 publication Critical patent/EP2463410B1/de
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
EP11192951.9A 2010-12-13 2011-12-12 Elektrochemisches Ätzen von Halbleitern Not-in-force EP2463410B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42259710P 2010-12-13 2010-12-13

Publications (3)

Publication Number Publication Date
EP2463410A2 EP2463410A2 (de) 2012-06-13
EP2463410A3 true EP2463410A3 (de) 2016-11-16
EP2463410B1 EP2463410B1 (de) 2018-07-04

Family

ID=45497721

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11192951.9A Not-in-force EP2463410B1 (de) 2010-12-13 2011-12-12 Elektrochemisches Ätzen von Halbleitern

Country Status (7)

Country Link
US (2) US8603314B2 (de)
EP (1) EP2463410B1 (de)
JP (1) JP5868155B2 (de)
KR (1) KR20120065958A (de)
CN (1) CN102623324B (de)
SG (1) SG182081A1 (de)
TW (1) TWI493615B (de)

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US8969122B2 (en) 2011-06-14 2015-03-03 International Business Machines Corporation Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom
EP2969918B1 (de) * 2013-03-15 2018-08-22 President and Fellows of Harvard College Herstellung von nanoporen in atomar dünnen membranen durch elektrische ultrakurze impulse
JP6545585B2 (ja) 2014-10-16 2019-07-17 株式会社荏原製作所 基板ホルダおよびめっき装置
WO2017112880A1 (en) * 2015-12-22 2017-06-29 William Marsh Rice University Formation of porous silicon materials with copper-containing pores
JP6859150B2 (ja) * 2017-03-22 2021-04-14 株式会社荏原製作所 めっき装置及びめっき槽構成の決定方法
EP3438330B9 (de) * 2017-08-03 2024-08-14 Groz-Beckert KG Textilmaschinenwerkzeugteil und verfahren zur herstellung eines textilwerkzeugs
CN110148581B (zh) * 2018-02-10 2022-05-17 姜富帅 一种金属-半导体的金属化工艺及方法
CN109770438B (zh) * 2019-03-25 2023-07-25 云南中烟工业有限责任公司 一种镀膜硅基电子烟雾化芯片及其制备方法
CN118825128A (zh) * 2024-06-27 2024-10-22 浙江省冶金产品质量检验站有限公司 一种用于增强晶硅太阳能电池电镀铜粘附力的表面处理方法

Citations (3)

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US20040192046A1 (en) * 2002-06-20 2004-09-30 Honeywell International, Inc. Highly selective silicon oxide etching compositions
JP2005105409A (ja) * 2003-09-08 2005-04-21 Rikogaku Shinkokai 多孔質シリコン構造体の製造方法および金属担持多孔質シリコンの製造方法

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JPS5884965A (ja) * 1981-11-13 1983-05-21 モ−ビル・ソラ−・エナ−ジ−・コ−ポレ−ション ニツケルめつき法
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EP0563625A2 (de) * 1992-04-03 1993-10-06 International Business Machines Corporation Abtasttauchsystem zur Herstellung von Schichten und Vorrichtungen aus porösem Silizium
US20040192046A1 (en) * 2002-06-20 2004-09-30 Honeywell International, Inc. Highly selective silicon oxide etching compositions
JP2005105409A (ja) * 2003-09-08 2005-04-21 Rikogaku Shinkokai 多孔質シリコン構造体の製造方法および金属担持多孔質シリコンの製造方法

Also Published As

Publication number Publication date
US9076657B2 (en) 2015-07-07
CN102623324A (zh) 2012-08-01
JP2012126999A (ja) 2012-07-05
US20120184098A1 (en) 2012-07-19
US8603314B2 (en) 2013-12-10
EP2463410A2 (de) 2012-06-13
JP5868155B2 (ja) 2016-02-24
CN102623324B (zh) 2014-12-10
KR20120065958A (ko) 2012-06-21
EP2463410B1 (de) 2018-07-04
TW201246352A (en) 2012-11-16
TWI493615B (zh) 2015-07-21
SG182081A1 (en) 2012-07-30
US20130288476A1 (en) 2013-10-31

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