EP2519971A1 - Composant optoélectronique et procédé de fabrication d'un composant optoélectronique - Google Patents

Composant optoélectronique et procédé de fabrication d'un composant optoélectronique

Info

Publication number
EP2519971A1
EP2519971A1 EP11710172A EP11710172A EP2519971A1 EP 2519971 A1 EP2519971 A1 EP 2519971A1 EP 11710172 A EP11710172 A EP 11710172A EP 11710172 A EP11710172 A EP 11710172A EP 2519971 A1 EP2519971 A1 EP 2519971A1
Authority
EP
European Patent Office
Prior art keywords
semiconductor chip
optoelectronic component
semiconductor chips
electromagnetic radiation
component according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11710172A
Other languages
German (de)
English (en)
Inventor
Ralph Wirth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2519971A1 publication Critical patent/EP2519971A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped

Definitions

  • the present invention relates to an optoelectronic component for mixing electromagnetic radiation of different wavelengths.
  • an optoelectronic component for mixing electromagnetic radiation of different wavelengths.
  • a first semiconductor chip can partially absorb the electromagnetic radiation of a second semiconductor chip, which degrades the light output of the optoelectronic component.
  • blue emitting InGaN semiconductor chips may be colored with red
  • the object of the invention is to provide an optoelectronic component which minimizes the absorption losses.
  • Centrosymmetric means that the first
  • Surface emitters are at least partially in a highly reflective material, especially a T1O 2
  • Material for the barriers can be PBT
  • the barrier serves for the complete optical separation of the inner region with the first semiconductor chips from the outer region with the second semiconductor chips.
  • Figure la shows a plan view of a
  • Figure lb shows a sectional view of the
  • Figure lc shows a sectional view of the
  • Figure ld shows a sectional view of the
  • Figure 2a shows a plan view of a
  • Figure 2b shows a plan view of a
  • Figure 4a shows a 3-dimensional view of a
  • FIG. 4b shows a sectional view of FIG
  • FIG. 5b shows a sectional view of FIG
  • FIG. 6 shows a sectional view of a
  • FIG. 7 shows a sectional view of a
  • Figure 8 shows a section of a 3-dimensional
  • FIG. 1 a shows a plan view of an optoelectronic component 1.
  • the optoelectronic component 1 is used for mixing electromagnetic radiation with different wavelengths, in particular in the far field.
  • On a carrier 2 are first semiconductor chips 3 for emitting electromagnetic radiation in a first
  • the first semiconductor chips 3 and the second semiconductor chips 4 are arranged in a single package.
  • the first semiconductor chips 3 are optically separated from the second semiconductor chips 4 by a barrier 5.
  • the first semiconductor chips 3 and the second semiconductor chips 4 are each centrosymmetric about a common
  • the first semiconductor chips 3 are in the inner region 113, in the center of the optoelectronic component 1,
  • the second semiconductor chips 4 are annular in an outer region 114 around the first
  • the barrier 5 between the first semiconductor chips 3 and the second semiconductor chips 4 is annular.
  • the barrier 5 has a high reflectivity of more than 90%, preferably more than 95%.
  • the first semiconductor chips 3 may be formed as AlGalnP semiconductor chips.
  • AlGalnP semiconductor chips emit electromagnetic radiation, preferably from the red spectral region.
  • the second semiconductor chips 4 may be formed as InGaN semiconductor chips.
  • InGaN semiconductor chips preferably emit electromagnetic radiation the UV to the green spectral range, particularly preferably from the blue spectral range.
  • FIG. 1b shows a sectional view of the optoelectronic component from FIG. 1a.
  • the highly reflective barrier 5 has a height between about 200 ym and about 2 mm, preferably a height of about 500 ym.
  • the AlGalnP semiconductor chips 3 are provided with a first
  • Potting material 7 shed.
  • the potting material 7 may comprise silicone or epoxy resin.
  • the InGaN semiconductor chips 4 are encapsulated with a second potting material 9, in particular of silicone.
  • the second potting material 9 in particular of silicone.
  • Potting material 9 has the shape of a planar
  • FIG. 1c differs only from FIG. 1b in that, in the region of the AlGalnP semiconductor chips 3, the carrier 2 between the AlGalnP semiconductor chips 3 is lined with a third potting material 18.
  • the third potting material 18 may be a white, T1O 2 filled,
  • Figure ld shows a further sectional view of the
  • the silicone may also be filled with ZrÜ 2 , Al 2 O 3 or ZnO.
  • the highly reflective material 11 can be flush with the surface emitters 4b. On the surface emitter 4b and the highly reflective material 11 is a second potting material. 9
  • Figure 2a shows a plan view of another
  • Arrangement of the InGaN semiconductor chips is symmetrical about the center Z.
  • Figure 2b shows a plan view of another
  • Optoelectronic component 1 Within the barrier 5, InGaN semiconductor chips 4 are arranged in a rectangular shape. Outside the barrier 5 are AlGalnP -
  • the center Z is the common center of symmetry for the InGaN semiconductor chips 4 and the AlGalnP semiconductor chips 3.
  • Figure 3 shows a plan view of another
  • Optoelectronic component 1 In the center of the Optoelectronic component 1, a single AlGalnP semiconductor chip 3 is arranged, which differs from the
  • a plurality of InGaN semiconductor chips are arranged annularly around the center Z in the outer region 114.
  • Figure 4a shows a 3-dimensional view of a
  • a hemispherical coupling-out lens 6 whose geometry fulfills the Weierstrass condition spans the AlGalnP semiconductor chips 3.
  • the InGaN semiconductor chips 4 span around in a ring-shaped manner
  • the barrier 5 separates the inner region 113 with the AlGalnP semiconductor chips 3 from the outer region 114 with the InGaN semiconductor chips 4. Again, the center Z is the common one
  • FIG. 4b shows a sectional view of FIG
  • Embodiment in Figure lb except that over the inner region 113 in which the AlGalnP - semiconductor chips 3 are arranged a Auskoppellinse 6 is arranged.
  • the coupling-out lens 6 fulfills the Weierstrass condition. This means that the radius 13 of the coupling lens 6 and the radius 12 of the emission surface in the following
  • Refractive index serh ai b / refractive index L in Se The refractive index outside is 1.
  • the refractive index of the lens is assumed to be 1.5.
  • Figure 5a shows a 3-dimensional view of a
  • the InGaN semiconductor chips 4 arranged in a circle around the center of symmetry Z are enclosed by a further, annular, barrier 8.
  • the further barrier 8 has a reflectivity of greater than 90%, preferably greater than 95%.
  • the InGaN semiconductor chips 4 are cast in a second potting material 9. The second
  • Potting material 9 has a conversion means 17, in particular a phosphor. A portion of the electromagnetic radiation emitted by the InGaN semiconductor chips 4 from the blue spectral range is converted by the conversion means 17 into the yellow-green spectral range. The semiconductor chips 3, 4 are over
  • a coupling lens 6 covers the inner
  • the InGaN semiconductor chips 4b are surface emitters,
  • This emission surface 14 has a certain radius 12. About the emission surface 14, the hemispherical lens 6 is spanned. The hemispherical lens 6 has a certain radius 13. The lens 6 has a refractive index 15 of about 1.5. Outside the lens 6, the refractive index of air, namely 1, is assumed. The two radii 12 and 13 are chosen so that the Weierstrass condition is met.
  • Embodiments are not limited to specific feature combinations. Although some

Landscapes

  • Led Device Packages (AREA)

Abstract

L'invention concerne un composant optoélectronique (1) pour mélanger des rayonnements électromagnétiques de longueurs d'onde différentes, en particulier dans la zone de Fraunhofer. Il est prévu sur un support (2) au moins une première puce semi-conductrice (3) pour émettre un rayonnement électromagnétique dans un premier domaine du spectre. Il est en outre prévu sur le support (2) au moins une deuxième puce semi-conductrice (4, 4a, 4b) pour émettre un rayonnement électromagnétique dans un deuxième domaine du spectre. Le premier et le deuxième domaine du spectre sont différents l'un de l'autre. Cette première puce semi-conductrice (3) et cette deuxième puce semi-conductrice (4, 4a, 4b) sont disposées dans un seul boîtier. Cette première puce semi-conductrice (3) est optiquement séparée de cette deuxième puce semi-conductrice (4, 4a, 4b) par une barrière (5). Cette première puce semi-conductrice (3) et cette deuxième puce semi-conductrice (4, 4a, 4b) sont respectivement disposées symétriquement par rapport à un centre de symétrie commun (Z).
EP11710172A 2010-04-16 2011-03-18 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Withdrawn EP2519971A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010027875A DE102010027875A1 (de) 2010-04-16 2010-04-16 Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
PCT/EP2011/054106 WO2011128173A1 (fr) 2010-04-16 2011-03-18 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique

Publications (1)

Publication Number Publication Date
EP2519971A1 true EP2519971A1 (fr) 2012-11-07

Family

ID=43983590

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11710172A Withdrawn EP2519971A1 (fr) 2010-04-16 2011-03-18 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique

Country Status (7)

Country Link
US (1) US8835931B2 (fr)
EP (1) EP2519971A1 (fr)
JP (1) JP5757993B2 (fr)
KR (1) KR101818554B1 (fr)
CN (2) CN102870214B (fr)
DE (1) DE102010027875A1 (fr)
WO (1) WO2011128173A1 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130170174A1 (en) 2011-12-29 2013-07-04 Intematix Technology Center Corp. Multi-cavities light emitting device
EP2613354B1 (fr) * 2012-01-03 2020-05-06 Epistar Corporation Dispositif électroluminescent à plusieurs cavités
WO2013104963A1 (fr) * 2012-01-10 2013-07-18 Koninklijke Philips N.V. Réseau électroluminescent à efficacité de sortie de puissance lumineuse améliorée
WO2013152362A1 (fr) * 2012-04-07 2013-10-10 Axlen, Inc. Dispositifs d'éclairage à del à grand flux et haute luminosité
EP2999014B1 (fr) * 2013-05-13 2020-01-22 Seoul Semiconductor Co., Ltd. Procédé de fabrication d'un boîtier de dispositif électroluminescent
US9847457B2 (en) 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
KR101546929B1 (ko) 2013-09-24 2015-08-25 서울바이오시스 주식회사 발광 다이오드 및 그것을 갖는 발광 다이오드 모듈
US10163747B2 (en) 2013-09-25 2018-12-25 STATS ChipPAC Pte. Ltd. Semiconductor device and method of controlling warpage in reconstituted wafer
US9607965B2 (en) 2013-09-25 2017-03-28 STATS ChipPAC Pte. Ltd. Semiconductor device and method of controlling warpage in reconstituted wafer
JP6149727B2 (ja) * 2013-12-28 2017-06-21 日亜化学工業株式会社 発光装置及びその製造方法
DE202014103029U1 (de) 2014-03-27 2014-07-15 Tridonic Jennersdorf Gmbh LED-Modul zur Abgabe von Weißlicht
USD771579S1 (en) * 2014-05-26 2016-11-15 Citizens Electronics Co., Ltd. Light emitting diode
JP1524801S (fr) * 2014-05-26 2015-06-01
USD767515S1 (en) * 2014-10-24 2016-09-27 Citizen Electronics Co., Ltd. Light emitting diode
DE102014116134A1 (de) 2014-11-05 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102015206471A1 (de) * 2015-04-10 2016-10-13 Osram Gmbh Beleuchtungseinrichtung
USD786809S1 (en) 2015-05-20 2017-05-16 Citizen Electronics Co., Ltd. Light emitting diode
JP1545462S (fr) * 2015-05-20 2016-03-14
DE102015007750A1 (de) * 2015-06-17 2016-12-22 Osram Gmbh Leuchtdiodenanordnung und Verfahren zum Herstellen einer Leuchtdiodenanordnung
JP6646969B2 (ja) * 2015-08-03 2020-02-14 シチズン電子株式会社 発光装置
US10354912B2 (en) * 2016-03-21 2019-07-16 Qualcomm Incorporated Forming self-aligned vertical interconnect accesses (VIAs) in interconnect structures for integrated circuits (ICs)
JP6769248B2 (ja) * 2016-11-09 2020-10-14 日亜化学工業株式会社 発光装置
TWI716674B (zh) * 2017-03-17 2021-01-21 新加坡商星科金朋有限公司 半導體裝置和在重建晶圓中控制翹曲的方法
JP7057528B2 (ja) * 2020-09-10 2022-04-20 日亜化学工業株式会社 発光装置
DK4274985T3 (da) 2021-01-05 2025-12-01 Signify Holding Bv Lysemitterende modul bestående af led-arrays til symmetrisk og asymmetrisk belysning
US11830858B2 (en) * 2022-03-21 2023-11-28 Foshan Evercore Optoelectronic Technology Co., Ltd. Full-color chip-on-board (COB) device
TWI859813B (zh) * 2022-04-13 2024-10-21 台達電子工業股份有限公司 照明裝置
CN116053265A (zh) * 2022-12-16 2023-05-02 硅能光电半导体(广州)有限公司 双色led及其封装工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040195641A1 (en) * 2001-04-27 2004-10-07 Ralph Wirth Semiconductor chip for optoelectronics
JP2005158958A (ja) * 2003-11-25 2005-06-16 Matsushita Electric Works Ltd 発光装置
US20070159064A1 (en) * 2005-12-27 2007-07-12 Samsung Electro-Mechanics Co., Ltd. White light emitting device

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521458A (ja) 1991-07-11 1993-01-29 Nec Corp 半導体装置およびその製造方法
JPH0521458U (ja) * 1991-08-30 1993-03-19 サンケン電気株式会社 半導体発光装置
JP2000150969A (ja) 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp 半導体発光装置
JP2001351404A (ja) 2000-04-06 2001-12-21 Kansai Tlo Kk 発光ダイオードを用いた面発光装置
DE10038213A1 (de) * 2000-08-04 2002-03-07 Osram Opto Semiconductors Gmbh Strahlungsquelle und Verfahren zur Herstellung einer Linsensform
JP3991624B2 (ja) * 2001-06-26 2007-10-17 日亜化学工業株式会社 表面実装型発光装置及びその製造方法
FR2839211A1 (fr) 2002-04-29 2003-10-31 Conception & Dev Michelin Sa Machine electrique dont le rotor est specialement adapte aux hautes vitesses
FR2852162B1 (fr) 2003-03-06 2005-09-23 Leroy Somer Moteurs Machine electrique tournante comportant un stator et deux rotors
US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
JP4458804B2 (ja) * 2003-10-17 2010-04-28 シチズン電子株式会社 白色ｌｅｄ
US20050234316A1 (en) 2004-04-16 2005-10-20 Sensors For Medicine And Science, Inc. Housing for a circuit that is to be implanted in-vivo and process of making the same
KR100524098B1 (ko) * 2004-09-10 2005-10-26 럭스피아 주식회사 반도체 발광장치 및 그 제조방법
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
JP4679183B2 (ja) * 2005-03-07 2011-04-27 シチズン電子株式会社 発光装置及び照明装置
JP2007019096A (ja) 2005-07-05 2007-01-25 Toyoda Gosei Co Ltd 発光装置及びその製造方法
JP5108297B2 (ja) * 2005-12-27 2012-12-26 昭和電工株式会社 発光素子実装パッケージ、面光源装置および表示装置
DE102006015377B4 (de) * 2006-04-03 2018-06-14 Ivoclar Vivadent Ag Halbleiter-Strahlungsquelle sowie Lichthärtgerät
US8033692B2 (en) 2006-05-23 2011-10-11 Cree, Inc. Lighting device
DE102006050880A1 (de) * 2006-06-30 2008-04-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Beleuchtungseinrichtung
DE102007021042A1 (de) * 2006-07-24 2008-01-31 Samsung Electro-Mechanics Co., Ltd., Suwon Leuchtdiodenmodul für Lichtquellenreihe
JP2008041699A (ja) * 2006-08-01 2008-02-21 Showa Denko Kk Ｌｅｄパッケージ
DE102007011123A1 (de) * 2007-03-07 2008-09-11 Osram Opto Semiconductors Gmbh Licht emittierendes Modul und Herstellungsverfahren für ein Licht emittierendes Modul
JP2008270305A (ja) * 2007-04-17 2008-11-06 Nichia Corp 発光装置
CN101325193B (zh) * 2007-06-13 2010-06-09 先进开发光电股份有限公司 发光二极管封装体
JP5431688B2 (ja) * 2007-06-29 2014-03-05 ソウル セミコンダクター カンパニー リミテッド マルチｌｅｄパッケージ
JP2009038161A (ja) * 2007-08-01 2009-02-19 Sumitomo Metal Electronics Devices Inc 発光素子収納用パッケージ
TWI331397B (en) 2007-09-03 2010-10-01 Ledtech Electronics Corp Array type light-emitting device with high color rendering index
TWI378573B (en) * 2007-10-31 2012-12-01 Young Lighting Technology Corp Light emitting diode package
CN101878540B (zh) * 2007-11-29 2013-11-06 日亚化学工业株式会社 发光装置及其制造方法
US7772603B2 (en) * 2007-12-17 2010-08-10 Ledtech Electronics Corp. Array type light-emitting device with high color rendering index
JP5119917B2 (ja) * 2007-12-28 2013-01-16 日亜化学工業株式会社 発光装置
JP5056520B2 (ja) * 2008-03-21 2012-10-24 東芝ライテック株式会社 照明装置
JP5125748B2 (ja) * 2008-05-13 2013-01-23 豊田合成株式会社 発光装置の製造方法
JP5628475B2 (ja) * 2008-07-22 2014-11-19 日亜化学工業株式会社 表面実装型発光装置の製造方法
JP2010190859A (ja) 2009-02-20 2010-09-02 Mitsubishi Heavy Ind Ltd テーパねじの締結力管理方法及び管理装置
JP3156731U (ja) * 2009-10-29 2010-01-14 柏友照明科技股▲フン▼有限公司 色温度調整装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040195641A1 (en) * 2001-04-27 2004-10-07 Ralph Wirth Semiconductor chip for optoelectronics
JP2005158958A (ja) * 2003-11-25 2005-06-16 Matsushita Electric Works Ltd 発光装置
US20070159064A1 (en) * 2005-12-27 2007-07-12 Samsung Electro-Mechanics Co., Ltd. White light emitting device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2011128173A1 *

Also Published As

Publication number Publication date
WO2011128173A1 (fr) 2011-10-20
JP2013526016A (ja) 2013-06-20
KR20130051449A (ko) 2013-05-20
JP5757993B2 (ja) 2015-08-05
KR101818554B1 (ko) 2018-01-15
CN102870214A (zh) 2013-01-09
CN102870214B (zh) 2015-08-05
CN104979339A (zh) 2015-10-14
DE102010027875A1 (de) 2011-10-20
CN104979339B (zh) 2018-06-26
US20130032820A1 (en) 2013-02-07
US8835931B2 (en) 2014-09-16

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