EP2671255A4 - Elektrodenstrukturen für arrays von nanostrukturen und verfahren dafür - Google Patents

Elektrodenstrukturen für arrays von nanostrukturen und verfahren dafür

Info

Publication number
EP2671255A4
EP2671255A4 EP12790253.4A EP12790253A EP2671255A4 EP 2671255 A4 EP2671255 A4 EP 2671255A4 EP 12790253 A EP12790253 A EP 12790253A EP 2671255 A4 EP2671255 A4 EP 2671255A4
Authority
EP
European Patent Office
Prior art keywords
nanostructures
arrays
method therefor
electrode structures
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12790253.4A
Other languages
English (en)
French (fr)
Other versions
EP2671255A1 (de
Inventor
Matthew L Scullin
Madhav A Karri
Adam Lorimer
Sylvain Muckenhirn
Gabriel Matus
Justin Tynes Kardel
Barbara Wacker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alphabet Energy Inc
Original Assignee
Alphabet Energy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/331,768 external-priority patent/US20120152295A1/en
Application filed by Alphabet Energy Inc filed Critical Alphabet Energy Inc
Publication of EP2671255A1 publication Critical patent/EP2671255A1/de
Publication of EP2671255A4 publication Critical patent/EP2671255A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
EP12790253.4A 2011-02-02 2012-02-01 Elektrodenstrukturen für arrays von nanostrukturen und verfahren dafür Withdrawn EP2671255A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161438709P 2011-02-02 2011-02-02
US13/331,768 US20120152295A1 (en) 2010-12-21 2011-12-20 Arrays of filled nanostructures with protruding segments and methods thereof
PCT/US2012/023425 WO2012161757A1 (en) 2011-02-02 2012-02-01 Electrode structures for arrays of nanostructures and methods thereof

Publications (2)

Publication Number Publication Date
EP2671255A1 EP2671255A1 (de) 2013-12-11
EP2671255A4 true EP2671255A4 (de) 2015-10-28

Family

ID=47217566

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12790253.4A Withdrawn EP2671255A4 (de) 2011-02-02 2012-02-01 Elektrodenstrukturen für arrays von nanostrukturen und verfahren dafür

Country Status (7)

Country Link
EP (1) EP2671255A4 (de)
JP (1) JP2014510396A (de)
KR (1) KR20140012073A (de)
CN (1) CN103460387A (de)
BR (1) BR112013019766A2 (de)
CA (1) CA2825888A1 (de)
WO (1) WO2012161757A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104205382A (zh) 2012-01-25 2014-12-10 阿尔法贝特能源公司 用于热回收系统的模块化热电单元及其方法
US9257627B2 (en) 2012-07-23 2016-02-09 Alphabet Energy, Inc. Method and structure for thermoelectric unicouple assembly
US9065017B2 (en) 2013-09-01 2015-06-23 Alphabet Energy, Inc. Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same
CN103579484A (zh) * 2013-11-05 2014-02-12 姚芸 一种温差发电器用金属导体电极
TWI570972B (zh) * 2016-01-20 2017-02-11 財團法人工業技術研究院 熱電轉換裝置以及熱電轉換器
JP6830587B2 (ja) * 2016-04-11 2021-02-17 学校法人東京理科大学 導電膜付き柱状インゴット基板及びその製造方法、シリサイド系熱電変換素子及びその製造方法、熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物
WO2019003581A1 (ja) * 2017-06-27 2019-01-03 株式会社村田製作所 熱電変換モジュールおよび電子部品モジュール
WO2019003582A1 (ja) * 2017-06-27 2019-01-03 株式会社村田製作所 熱電変換モジュールおよび電子部品モジュール
KR102265762B1 (ko) * 2019-11-27 2021-06-15 한국세라믹기술원 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050060884A1 (en) * 2003-09-19 2005-03-24 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US20050112872A1 (en) * 2003-11-25 2005-05-26 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US20060266402A1 (en) * 2005-05-26 2006-11-30 An-Ping Zhang Thermal transfer and power generation devices and methods of making the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3600486B2 (ja) * 1999-08-24 2004-12-15 セイコーインスツル株式会社 熱電変換素子の製造方法
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US8154093B2 (en) * 2002-01-16 2012-04-10 Nanomix, Inc. Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices
JP2004031696A (ja) * 2002-06-26 2004-01-29 Kyocera Corp 熱電モジュール及びその製造方法
WO2008060282A1 (en) * 2006-11-17 2008-05-22 General Electric Company Thermal transfer and power generation devices and methods of making the same
US8049203B2 (en) * 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
US20080178920A1 (en) * 2006-12-28 2008-07-31 Schlumberger Technology Corporation Devices for cooling and power
US7905013B2 (en) * 2007-06-04 2011-03-15 Sharp Laboratories Of America, Inc. Method for forming an iridium oxide (IrOx) nanowire neural sensor array
JP4925964B2 (ja) * 2007-08-06 2012-05-09 株式会社デンソー 積層型熱電変換素子及びその製造方法
FR2923601B1 (fr) * 2007-11-12 2010-01-01 Commissariat Energie Atomique Detecteur de rayonnement electromagnetique a connexion par nanofil et procede de realisation
TWI401830B (zh) * 2008-12-31 2013-07-11 Ind Tech Res Inst 低熱回流之熱電奈米線陣列及其製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050060884A1 (en) * 2003-09-19 2005-03-24 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US20050112872A1 (en) * 2003-11-25 2005-05-26 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US20060266402A1 (en) * 2005-05-26 2006-11-30 An-Ping Zhang Thermal transfer and power generation devices and methods of making the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2012161757A1 *

Also Published As

Publication number Publication date
EP2671255A1 (de) 2013-12-11
CN103460387A (zh) 2013-12-18
BR112013019766A2 (pt) 2019-09-24
CA2825888A1 (en) 2012-11-29
KR20140012073A (ko) 2014-01-29
WO2012161757A1 (en) 2012-11-29
JP2014510396A (ja) 2014-04-24

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Inventor name: KARDEL, JUSTIN, TYNES

Inventor name: KARRI, MADHAV, A.

Inventor name: SCULLIN, MATTHEW, L.

Inventor name: MATUS, GABRIEL

Inventor name: WACKER, BARBARA

Inventor name: LORIMER, ADAM

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