EP2697826A4 - LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS - Google Patents

LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS

Info

Publication number
EP2697826A4
EP2697826A4 EP12770650.5A EP12770650A EP2697826A4 EP 2697826 A4 EP2697826 A4 EP 2697826A4 EP 12770650 A EP12770650 A EP 12770650A EP 2697826 A4 EP2697826 A4 EP 2697826A4
Authority
EP
European Patent Office
Prior art keywords
low temperature
silicon oxide
oxide films
temperature deposition
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12770650.5A
Other languages
German (de)
French (fr)
Other versions
EP2697826A1 (en
Inventor
Curtis Dove
Baljit Singh
Eduard Gil Paran Tesnado
Mehdi Balooch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asia Union Electronic Chemical Corp
Original Assignee
Asia Union Electronic Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asia Union Electronic Chemical Corp filed Critical Asia Union Electronic Chemical Corp
Publication of EP2697826A1 publication Critical patent/EP2697826A1/en
Publication of EP2697826A4 publication Critical patent/EP2697826A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
EP12770650.5A 2011-04-12 2012-03-29 LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS Withdrawn EP2697826A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161474415P 2011-04-12 2011-04-12
PCT/US2012/031122 WO2012141908A1 (en) 2011-04-12 2012-03-29 Low temperature deposition of silicon oxide films

Publications (2)

Publication Number Publication Date
EP2697826A1 EP2697826A1 (en) 2014-02-19
EP2697826A4 true EP2697826A4 (en) 2014-10-22

Family

ID=47009645

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12770650.5A Withdrawn EP2697826A4 (en) 2011-04-12 2012-03-29 LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS

Country Status (4)

Country Link
EP (1) EP2697826A4 (en)
SG (1) SG194085A1 (en)
TW (1) TW201307610A (en)
WO (1) WO2012141908A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013004611B4 (en) * 2013-03-14 2014-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Coating, process for its preparation and its use

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616233A (en) * 1996-05-01 1997-04-01 National Science Council Method for making a fluorinated silicon dioxide layer on silicon substrate by anodic oxidation at room temperature
US20020106865A1 (en) * 2001-02-05 2002-08-08 Tai-Ju Chen Method of forming shallow trench isolation
EP1293488A1 (en) * 2001-09-12 2003-03-19 Toyo Gosei Kogyo Co., Ltd. Coating solution and method for forming transparent coating film

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721632B2 (en) * 1992-02-25 1998-03-04 松下電工株式会社 Processing method of copper circuit of circuit board
EP1692572A2 (en) * 2003-10-29 2006-08-23 Mallinckrodt Baker, Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
KR100971658B1 (en) * 2008-01-03 2010-07-22 엘지전자 주식회사 Texturing Methods of Silicon Solar Cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616233A (en) * 1996-05-01 1997-04-01 National Science Council Method for making a fluorinated silicon dioxide layer on silicon substrate by anodic oxidation at room temperature
US20020106865A1 (en) * 2001-02-05 2002-08-08 Tai-Ju Chen Method of forming shallow trench isolation
EP1293488A1 (en) * 2001-09-12 2003-03-19 Toyo Gosei Kogyo Co., Ltd. Coating solution and method for forming transparent coating film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2012141908A1 *

Also Published As

Publication number Publication date
WO2012141908A1 (en) 2012-10-18
SG194085A1 (en) 2013-11-29
EP2697826A1 (en) 2014-02-19
WO2012141908A8 (en) 2012-11-22
TW201307610A (en) 2013-02-16

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