WO2012141908A8 - Low temperature deposition of silicon oxide films - Google Patents

Low temperature deposition of silicon oxide films Download PDF

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Publication number
WO2012141908A8
WO2012141908A8 PCT/US2012/031122 US2012031122W WO2012141908A8 WO 2012141908 A8 WO2012141908 A8 WO 2012141908A8 US 2012031122 W US2012031122 W US 2012031122W WO 2012141908 A8 WO2012141908 A8 WO 2012141908A8
Authority
WO
WIPO (PCT)
Prior art keywords
silicon oxide
oxide films
low temperature
temperature deposition
wet chemistry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/031122
Other languages
French (fr)
Other versions
WO2012141908A1 (en
Inventor
Curtis Dove
Baljit Singh
Eduard Gil Paran TESNADO
Mehdi Balooch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asia Union Electronic Chemical Corp
Original Assignee
Asia Union Electronic Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asia Union Electronic Chemical Corp filed Critical Asia Union Electronic Chemical Corp
Priority to EP12770650.5A priority Critical patent/EP2697826A4/en
Priority to SG2013074265A priority patent/SG194085A1/en
Publication of WO2012141908A1 publication Critical patent/WO2012141908A1/en
Publication of WO2012141908A8 publication Critical patent/WO2012141908A8/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Surface Treatment Of Glass (AREA)
  • Paints Or Removers (AREA)

Abstract

Deposition of silicon oxide films at low temperature by using wet chemistry techniques. The wet chemistry solution may be a mixture of sodium hypochloride (NaOCl), tetra methyl ammonium hydroxide (TMAH) and hydrated silicate, such as silicic acid. The resulting silicon oxide films provide excellent anti-reflective coatings for solar cells and the like.
PCT/US2012/031122 2011-04-12 2012-03-29 Low temperature deposition of silicon oxide films Ceased WO2012141908A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP12770650.5A EP2697826A4 (en) 2011-04-12 2012-03-29 LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS
SG2013074265A SG194085A1 (en) 2011-04-12 2012-03-29 Low temperature deposition of silicon oxide films

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161474415P 2011-04-12 2011-04-12
US61/474,415 2011-04-12

Publications (2)

Publication Number Publication Date
WO2012141908A1 WO2012141908A1 (en) 2012-10-18
WO2012141908A8 true WO2012141908A8 (en) 2012-11-22

Family

ID=47009645

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/031122 Ceased WO2012141908A1 (en) 2011-04-12 2012-03-29 Low temperature deposition of silicon oxide films

Country Status (4)

Country Link
EP (1) EP2697826A4 (en)
SG (1) SG194085A1 (en)
TW (1) TW201307610A (en)
WO (1) WO2012141908A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013004611B4 (en) * 2013-03-14 2014-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Coating, process for its preparation and its use

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721632B2 (en) * 1992-02-25 1998-03-04 松下電工株式会社 Processing method of copper circuit of circuit board
US5616233A (en) * 1996-05-01 1997-04-01 National Science Council Method for making a fluorinated silicon dioxide layer on silicon substrate by anodic oxidation at room temperature
US20020106865A1 (en) * 2001-02-05 2002-08-08 Tai-Ju Chen Method of forming shallow trench isolation
KR20030023524A (en) * 2001-09-12 2003-03-19 도요 고세이 고교 가부시키가이샤 Coating solution for forming transparent silica coating film and method for producing transparent silica coating film
EP1692572A2 (en) * 2003-10-29 2006-08-23 Mallinckrodt Baker, Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
KR100971658B1 (en) * 2008-01-03 2010-07-22 엘지전자 주식회사 Texturing Methods of Silicon Solar Cells

Also Published As

Publication number Publication date
WO2012141908A1 (en) 2012-10-18
SG194085A1 (en) 2013-11-29
EP2697826A4 (en) 2014-10-22
EP2697826A1 (en) 2014-02-19
TW201307610A (en) 2013-02-16

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