EP2748845A4 - Structure de tranche pour la fabrication de circuits intégrés électroniques - Google Patents

Structure de tranche pour la fabrication de circuits intégrés électroniques

Info

Publication number
EP2748845A4
EP2748845A4 EP12825755.7A EP12825755A EP2748845A4 EP 2748845 A4 EP2748845 A4 EP 2748845A4 EP 12825755 A EP12825755 A EP 12825755A EP 2748845 A4 EP2748845 A4 EP 2748845A4
Authority
EP
European Patent Office
Prior art keywords
manufacture
integrated circuits
wafer structure
electronic integrated
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12825755.7A
Other languages
German (de)
English (en)
Other versions
EP2748845A1 (fr
Inventor
David B Kerwin
Joseph M Benedetto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Frontgrade Colorado Springs LLC
Original Assignee
Aeroflex Colorado Springs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/218,352 external-priority patent/US20130049178A1/en
Priority claimed from US13/218,273 external-priority patent/US9378955B2/en
Priority claimed from US13/218,335 external-priority patent/US9312133B2/en
Priority claimed from US13/218,292 external-priority patent/US9378956B2/en
Priority claimed from US13/218,345 external-priority patent/US20130049175A1/en
Priority claimed from US13/218,308 external-priority patent/US9396947B2/en
Application filed by Aeroflex Colorado Springs Inc filed Critical Aeroflex Colorado Springs Inc
Publication of EP2748845A1 publication Critical patent/EP2748845A1/fr
Publication of EP2748845A4 publication Critical patent/EP2748845A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
EP12825755.7A 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques Withdrawn EP2748845A4 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13/218,352 US20130049178A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,273 US9378955B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,335 US9312133B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,292 US9378956B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,345 US20130049175A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,308 US9396947B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052302 WO2013028988A1 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques

Publications (2)

Publication Number Publication Date
EP2748845A1 EP2748845A1 (fr) 2014-07-02
EP2748845A4 true EP2748845A4 (fr) 2015-07-08

Family

ID=47746901

Family Applications (6)

Application Number Title Priority Date Filing Date
EP12826508.9A Withdrawn EP2748848A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12825755.7A Withdrawn EP2748845A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12854047.3A Withdrawn EP2748849A4 (fr) 2011-08-25 2012-08-24 Structure de tranches pour circuit intégré électronique
EP12825811.8A Withdrawn EP2748846A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12825109.7A Withdrawn EP2748844A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12826159.1A Withdrawn EP2748847A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP12826508.9A Withdrawn EP2748848A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques

Family Applications After (4)

Application Number Title Priority Date Filing Date
EP12854047.3A Withdrawn EP2748849A4 (fr) 2011-08-25 2012-08-24 Structure de tranches pour circuit intégré électronique
EP12825811.8A Withdrawn EP2748846A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12825109.7A Withdrawn EP2748844A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12826159.1A Withdrawn EP2748847A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques

Country Status (2)

Country Link
EP (6) EP2748848A4 (fr)
WO (6) WO2013028973A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2996152B1 (fr) * 2014-09-15 2017-03-15 ABB Schweiz AG Diode de puissance à haute fréquence et sa méthode de manufacture
DE102017002935A1 (de) * 2017-03-24 2018-09-27 3-5 Power Electronics GmbH III-V-Halbleiterdiode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
DE3435464A1 (de) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Gleichrichterdiode
WO1992009099A1 (fr) * 1990-11-14 1992-05-29 Robert Bosch Gmbh Procede pour la fabrication d'elements semiconducteurs, en particulier de diodes
US20110042576A1 (en) * 2009-08-20 2011-02-24 Icemos Technology Ltd. Direct wafer-bonded through-hole photodiode

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2579979B2 (ja) * 1987-02-26 1997-02-12 株式会社東芝 半導体素子の製造方法
JPH07107935B2 (ja) * 1988-02-04 1995-11-15 株式会社東芝 半導体装置
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
JPH07263721A (ja) * 1994-03-25 1995-10-13 Nippondenso Co Ltd 半導体装置及びその製造方法
US5541122A (en) * 1995-04-03 1996-07-30 Motorola Inc. Method of fabricating an insulated-gate bipolar transistor
US6054369A (en) * 1997-06-30 2000-04-25 Intersil Corporation Lifetime control for semiconductor devices
US6027956A (en) * 1998-02-05 2000-02-22 Integration Associates, Inc. Process for producing planar dielectrically isolated high speed pin photodiode
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
US6346460B1 (en) * 1999-03-30 2002-02-12 Seh-America Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture
EP1146423B1 (fr) * 2000-04-11 2010-01-20 The Boeing Company Système de traitement à vote majoritaire
US7518218B2 (en) * 2005-03-03 2009-04-14 Aeroflex Colorado Springs, Inc. Total ionizing dose suppression transistor architecture
US8278719B2 (en) * 2005-10-14 2012-10-02 Silicon Space Technology Corp. Radiation hardened isolation structures and fabrication methods
DE102005061263B4 (de) * 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben
US7566951B2 (en) * 2006-04-21 2009-07-28 Memc Electronic Materials, Inc. Silicon structures with improved resistance to radiation events
JP5320679B2 (ja) * 2007-02-28 2013-10-23 富士電機株式会社 半導体装置およびその製造方法
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
KR20090106828A (ko) * 2008-04-07 2009-10-12 삼성전자주식회사 웨이퍼 본딩 방법 및 그 방법에 의해 본딩된 웨이퍼 구조체
US8288798B2 (en) * 2010-02-10 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Step doping in extensions of III-V family semiconductor devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
DE3435464A1 (de) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Gleichrichterdiode
WO1992009099A1 (fr) * 1990-11-14 1992-05-29 Robert Bosch Gmbh Procede pour la fabrication d'elements semiconducteurs, en particulier de diodes
US20110042576A1 (en) * 2009-08-20 2011-02-24 Icemos Technology Ltd. Direct wafer-bonded through-hole photodiode

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
A. OCHOA ET AL: "Latch-Up Control in CMOS Integrated Circuits", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 26, no. 6, 1 December 1979 (1979-12-01), pages 5065 - 5068, XP055191893, ISSN: 0018-9499, DOI: 10.1109/TNS.1979.4330274 *
DUBUC J P ET AL: "Technological parameter and experimental set-up influences on latch-up triggering level in bulk CMOS device", RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1993.,RADECS 93., SECOND EUROPEAN CONFERENCE ON ST. MALO, FRANCE 13-16 SEPT. 1993, NEW YORK, NY, USA,IEEE, 13 September 1993 (1993-09-13), pages 425 - 432, XP010120707, ISBN: 978-0-7803-1793-2 *
SCHUHMACHER H ET AL: "Quasi-monoenergetic neutron beams with energies from 25 to 70 MeV", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A: ACCELERATORS, SPECTROMETERS, DETECTORS, AND ASSOCIATED EQUIPMENT, ELSEVIER BV * NORTH-HOLLAND, NL, vol. 421, no. 1-2, 21 January 1999 (1999-01-21), pages 284 - 295, XP004153421, ISSN: 0168-9002, DOI: 10.1016/S0168-9002(98)01267-4 *
See also references of WO2013028988A1 *

Also Published As

Publication number Publication date
WO2013028983A1 (fr) 2013-02-28
EP2748848A4 (fr) 2015-06-10
EP2748844A1 (fr) 2014-07-02
EP2748846A4 (fr) 2015-11-11
WO2013028976A1 (fr) 2013-02-28
EP2748849A2 (fr) 2014-07-02
EP2748849A4 (fr) 2015-12-16
WO2013081694A3 (fr) 2013-10-24
WO2013028973A1 (fr) 2013-02-28
EP2748847A4 (fr) 2016-06-01
WO2013028986A1 (fr) 2013-02-28
EP2748844A4 (fr) 2015-11-04
EP2748847A1 (fr) 2014-07-02
EP2748846A1 (fr) 2014-07-02
WO2013028988A1 (fr) 2013-02-28
EP2748848A1 (fr) 2014-07-02
WO2013081694A2 (fr) 2013-06-06
EP2748845A1 (fr) 2014-07-02

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