EP2748848A4 - Waferstruktur zur herstellung einer elektronischen integrierten schaltung - Google Patents

Waferstruktur zur herstellung einer elektronischen integrierten schaltung

Info

Publication number
EP2748848A4
EP2748848A4 EP12826508.9A EP12826508A EP2748848A4 EP 2748848 A4 EP2748848 A4 EP 2748848A4 EP 12826508 A EP12826508 A EP 12826508A EP 2748848 A4 EP2748848 A4 EP 2748848A4
Authority
EP
European Patent Office
Prior art keywords
manufacture
integrated circuits
wafer structure
electronic integrated
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12826508.9A
Other languages
English (en)
French (fr)
Other versions
EP2748848A1 (de
Inventor
David B Kerwin
Joseph M Benedetto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Frontgrade Colorado Springs LLC
Original Assignee
Aeroflex Colorado Springs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/218,352 external-priority patent/US20130049178A1/en
Priority claimed from US13/218,273 external-priority patent/US9378955B2/en
Priority claimed from US13/218,335 external-priority patent/US9312133B2/en
Priority claimed from US13/218,292 external-priority patent/US9378956B2/en
Priority claimed from US13/218,345 external-priority patent/US20130049175A1/en
Priority claimed from US13/218,308 external-priority patent/US9396947B2/en
Application filed by Aeroflex Colorado Springs Inc filed Critical Aeroflex Colorado Springs Inc
Publication of EP2748848A1 publication Critical patent/EP2748848A1/de
Publication of EP2748848A4 publication Critical patent/EP2748848A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
EP12826508.9A 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung Withdrawn EP2748848A4 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13/218,352 US20130049178A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,273 US9378955B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,335 US9312133B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,292 US9378956B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,345 US20130049175A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,308 US9396947B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052269 WO2013028973A1 (en) 2011-08-25 2012-08-24 Wafer structure for electronic integrated circuit manufacturing

Publications (2)

Publication Number Publication Date
EP2748848A1 EP2748848A1 (de) 2014-07-02
EP2748848A4 true EP2748848A4 (de) 2015-06-10

Family

ID=47746901

Family Applications (6)

Application Number Title Priority Date Filing Date
EP12826508.9A Withdrawn EP2748848A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung
EP12825755.7A Withdrawn EP2748845A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung
EP12854047.3A Withdrawn EP2748849A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung
EP12825811.8A Withdrawn EP2748846A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung
EP12825109.7A Withdrawn EP2748844A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung
EP12826159.1A Withdrawn EP2748847A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung

Family Applications After (5)

Application Number Title Priority Date Filing Date
EP12825755.7A Withdrawn EP2748845A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung
EP12854047.3A Withdrawn EP2748849A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung
EP12825811.8A Withdrawn EP2748846A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung
EP12825109.7A Withdrawn EP2748844A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung
EP12826159.1A Withdrawn EP2748847A4 (de) 2011-08-25 2012-08-24 Waferstruktur zur herstellung einer elektronischen integrierten schaltung

Country Status (2)

Country Link
EP (6) EP2748848A4 (de)
WO (6) WO2013028973A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2996152B1 (de) * 2014-09-15 2017-03-15 ABB Schweiz AG Hochfrequenzdiode und Verfahren zu deren Herstellung
DE102017002935A1 (de) * 2017-03-24 2018-09-27 3-5 Power Electronics GmbH III-V-Halbleiterdiode

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0327316A2 (de) * 1988-02-04 1989-08-09 Kabushiki Kaisha Toshiba Halbleitervorrichtung mit zusammengesetztem Substrat, hergestellt aus zwei Halbleitersubstraten in engem Kontakt
EP0405422A1 (de) * 1989-06-29 1991-01-02 Ixys Corporation Bestrahlung und Tempern von Halbleiterbauelementen zur Verbesserung ihrer Eigenschaften
WO1992009099A1 (de) * 1990-11-14 1992-05-29 Robert Bosch Gmbh Verfahren zur herstellung von halbleiterelementen, insbesondere von dioden
US5466303A (en) * 1994-03-25 1995-11-14 Nippondenso Co., Ltd. Semiconductor device and manufacturing method therefor
EP0889509A2 (de) * 1997-06-30 1999-01-07 Harris Corporation Kontrolle der Lebensdauer für Halbleiterbauelemente
JP2008211148A (ja) * 2007-02-28 2008-09-11 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
US20090185316A1 (en) * 2008-01-21 2009-07-23 Jens Schneider ESD/EOS Performance by Introduction of Defects
US20110042576A1 (en) * 2009-08-20 2011-02-24 Icemos Technology Ltd. Direct wafer-bonded through-hole photodiode

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
DE3435464A1 (de) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Gleichrichterdiode
JP2579979B2 (ja) * 1987-02-26 1997-02-12 株式会社東芝 半導体素子の製造方法
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US5541122A (en) * 1995-04-03 1996-07-30 Motorola Inc. Method of fabricating an insulated-gate bipolar transistor
US6027956A (en) * 1998-02-05 2000-02-22 Integration Associates, Inc. Process for producing planar dielectrically isolated high speed pin photodiode
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
US6346460B1 (en) * 1999-03-30 2002-02-12 Seh-America Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture
EP1146423B1 (de) * 2000-04-11 2010-01-20 The Boeing Company Verarbeitungssystem mit Mehrheitsentscheidung
US7518218B2 (en) * 2005-03-03 2009-04-14 Aeroflex Colorado Springs, Inc. Total ionizing dose suppression transistor architecture
US8278719B2 (en) * 2005-10-14 2012-10-02 Silicon Space Technology Corp. Radiation hardened isolation structures and fabrication methods
DE102005061263B4 (de) * 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben
US7566951B2 (en) * 2006-04-21 2009-07-28 Memc Electronic Materials, Inc. Silicon structures with improved resistance to radiation events
KR20090106828A (ko) * 2008-04-07 2009-10-12 삼성전자주식회사 웨이퍼 본딩 방법 및 그 방법에 의해 본딩된 웨이퍼 구조체
US8288798B2 (en) * 2010-02-10 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Step doping in extensions of III-V family semiconductor devices

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0327316A2 (de) * 1988-02-04 1989-08-09 Kabushiki Kaisha Toshiba Halbleitervorrichtung mit zusammengesetztem Substrat, hergestellt aus zwei Halbleitersubstraten in engem Kontakt
EP0405422A1 (de) * 1989-06-29 1991-01-02 Ixys Corporation Bestrahlung und Tempern von Halbleiterbauelementen zur Verbesserung ihrer Eigenschaften
WO1992009099A1 (de) * 1990-11-14 1992-05-29 Robert Bosch Gmbh Verfahren zur herstellung von halbleiterelementen, insbesondere von dioden
US5466303A (en) * 1994-03-25 1995-11-14 Nippondenso Co., Ltd. Semiconductor device and manufacturing method therefor
EP0889509A2 (de) * 1997-06-30 1999-01-07 Harris Corporation Kontrolle der Lebensdauer für Halbleiterbauelemente
JP2008211148A (ja) * 2007-02-28 2008-09-11 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
US20090185316A1 (en) * 2008-01-21 2009-07-23 Jens Schneider ESD/EOS Performance by Introduction of Defects
US20110042576A1 (en) * 2009-08-20 2011-02-24 Icemos Technology Ltd. Direct wafer-bonded through-hole photodiode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DUSSAULT H ET AL: "High energy heavy-ion-induced single event transients in epitaxial structures", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 41, no. 6, 1 December 1994 (1994-12-01), pages 2018 - 2025, XP011386325, ISSN: 0018-9499, DOI: 10.1109/23.340537 *
See also references of WO2013028973A1 *

Also Published As

Publication number Publication date
WO2013028983A1 (en) 2013-02-28
EP2748844A1 (de) 2014-07-02
EP2748846A4 (de) 2015-11-11
WO2013028976A1 (en) 2013-02-28
EP2748849A2 (de) 2014-07-02
EP2748849A4 (de) 2015-12-16
EP2748845A4 (de) 2015-07-08
WO2013081694A3 (en) 2013-10-24
WO2013028973A1 (en) 2013-02-28
EP2748847A4 (de) 2016-06-01
WO2013028986A1 (en) 2013-02-28
EP2748844A4 (de) 2015-11-04
EP2748847A1 (de) 2014-07-02
EP2748846A1 (de) 2014-07-02
WO2013028988A1 (en) 2013-02-28
EP2748848A1 (de) 2014-07-02
WO2013081694A2 (en) 2013-06-06
EP2748845A1 (de) 2014-07-02

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