EP2758992A4 - Formations de commutation verticales pour protection contre les décharges électrostatiques - Google Patents

Formations de commutation verticales pour protection contre les décharges électrostatiques

Info

Publication number
EP2758992A4
EP2758992A4 EP12834081.7A EP12834081A EP2758992A4 EP 2758992 A4 EP2758992 A4 EP 2758992A4 EP 12834081 A EP12834081 A EP 12834081A EP 2758992 A4 EP2758992 A4 EP 2758992A4
Authority
EP
European Patent Office
Prior art keywords
protection against
electrostatic discharge
against electrostatic
vertical switching
switching training
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12834081.7A
Other languages
German (de)
English (en)
Other versions
EP2758992A2 (fr
Inventor
Robert Fleming
Michael Glickman
Bhret Graydon
Junjun Wu
Daniel Vasquez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Littelfuse Inc
Original Assignee
Littelfuse Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Littelfuse Inc filed Critical Littelfuse Inc
Publication of EP2758992A2 publication Critical patent/EP2758992A2/fr
Publication of EP2758992A4 publication Critical patent/EP2758992A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
    • H05K1/0257—Overvoltage protection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/044—Physical layout, materials not provided for elsewhere
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
    • H05K1/0257—Overvoltage protection
    • H05K1/0259—Electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07—Electric details
    • H05K2201/073—High voltage adaptations
    • H05K2201/0738—Use of voltage responsive materials, e.g. voltage switchable dielectric or varistor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Structure Of Printed Boards (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
EP12834081.7A 2011-09-21 2012-09-21 Formations de commutation verticales pour protection contre les décharges électrostatiques Withdrawn EP2758992A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161537490P 2011-09-21 2011-09-21
PCT/US2012/056663 WO2013044096A2 (fr) 2011-09-21 2012-09-21 Formations de commutation verticales pour protection contre les décharges électrostatiques

Publications (2)

Publication Number Publication Date
EP2758992A2 EP2758992A2 (fr) 2014-07-30
EP2758992A4 true EP2758992A4 (fr) 2015-08-12

Family

ID=47915104

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12834081.7A Withdrawn EP2758992A4 (fr) 2011-09-21 2012-09-21 Formations de commutation verticales pour protection contre les décharges électrostatiques

Country Status (6)

Country Link
EP (1) EP2758992A4 (fr)
JP (3) JP2014535157A (fr)
KR (1) KR101923760B1 (fr)
CN (1) CN103999217B (fr)
TW (1) TWI473542B (fr)
WO (1) WO2013044096A2 (fr)

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US9214433B2 (en) * 2013-05-21 2015-12-15 Xilinx, Inc. Charge damage protection on an interposer for a stacked die assembly
US9401353B2 (en) 2014-08-08 2016-07-26 Qualcomm Incorporated Interposer integrated with 3D passive devices
US9583481B2 (en) 2014-09-30 2017-02-28 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device comprising plurality of conductive portions disposed within wells and a nanowire coupled to conductive portion
TWI558290B (zh) * 2015-08-24 2016-11-11 欣興電子股份有限公司 線路板的製造方法
KR102452045B1 (ko) 2017-12-28 2022-10-07 (주)아모텍 과전압 보호소자 및 그 제조방법
US11112436B2 (en) 2018-03-26 2021-09-07 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events
KR102576106B1 (ko) 2018-06-19 2023-09-08 주식회사 아모텍 과전압 보호소자
KR102704159B1 (ko) 2018-09-07 2024-09-06 주식회사 아모텍 노이즈 제거용 복합소자
KR102586946B1 (ko) 2018-10-23 2023-10-10 주식회사 아모텍 과전압 보호용 복합소자
KR102712310B1 (ko) 2018-12-14 2024-10-04 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
CN110055126A (zh) * 2019-05-31 2019-07-26 青岛科技大学 一种MOF-Ti/TiOx核壳型纳米复合颗粒电流变液及其制备方法
DE102019127871A1 (de) * 2019-10-16 2021-04-22 Semikron Elektronik Gmbh & Co. Kg Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
CN110794273A (zh) * 2019-11-19 2020-02-14 哈尔滨理工大学 含有高压驱动保护电极的电位时域谱测试系统
IT202000016699A1 (it) * 2020-07-09 2022-01-09 Ingelva Srl Apparecchiatura e metodo di prevenzione e smorzamento di picchi di tensione e corrente di origine esterna ed interna per elettrodotti a media, alta, e altissima tensione
JP2026506293A (ja) * 2022-12-22 2026-02-24 ベレノス・クリーン・パワー・ホールディング・アーゲー バイポーラ固体バッテリーセル
US20240405519A1 (en) * 2023-05-31 2024-12-05 Analog Devices International Unlimited Company Spark gap structures for electrical overstress detection and protection
TWI892785B (zh) * 2024-08-05 2025-08-01 聯華電子股份有限公司 內連線結構及其形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060061925A1 (en) * 2004-09-17 2006-03-23 Shrier Karen P Devices and systems for electrostatic discharge suppression
US20060152334A1 (en) * 2005-01-10 2006-07-13 Nathaniel Maercklein Electrostatic discharge protection for embedded components
EP1990834A2 (fr) * 2007-05-10 2008-11-12 Texas Instruments France Intégration locale de feuille non linéaire dans des ensembles de circuits intégrés pour une protection ESD/EOS
US20110211289A1 (en) * 2010-02-26 2011-09-01 Lex Kosowsky Embedded protection against spurious electrical events

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US2953309A (en) 1958-05-29 1960-09-20 Harry W Moore Apparatus for and method of winding stator coils
US7825491B2 (en) * 2005-11-22 2010-11-02 Shocking Technologies, Inc. Light-emitting device using voltage switchable dielectric material
WO2001017320A1 (fr) * 1999-08-27 2001-03-08 Lex Kosowsky Structure de transport du courant par un materiau dielectrique a commutation de tension
US20120195018A1 (en) * 2005-11-22 2012-08-02 Lex Kosowsky Wireless communication device using voltage switchable dielectric material
US7695644B2 (en) * 1999-08-27 2010-04-13 Shocking Technologies, Inc. Device applications for voltage switchable dielectric material having high aspect ratio particles
JP2001237586A (ja) * 2000-02-25 2001-08-31 Matsushita Electric Ind Co Ltd 回路基板、回路部品内蔵モジュールおよびそれらの製造方法
AU2003224894A1 (en) * 2002-04-08 2003-10-27 Littelfuse, Inc. Voltage variable material for direct application and devices employing same
US6981319B2 (en) * 2003-02-13 2006-01-03 Shrier Karen P Method of manufacturing devices to protect election components
KR100576872B1 (ko) * 2004-09-17 2006-05-10 삼성전기주식회사 정전기 방전 방지기능을 갖는 질화물 반도체 발광소자
TWI397356B (zh) * 2005-02-16 2013-05-21 聖米納公司 印刷電路板用嵌入式瞬態保護之實質連續層
CN101578710B (zh) * 2005-11-22 2013-05-22 肖克科技有限公司 使用电压可变介电材料的发光设备
US7981325B2 (en) 2006-07-29 2011-07-19 Shocking Technologies, Inc. Electronic device for voltage switchable dielectric material having high aspect ratio particles
JP2010521058A (ja) 2006-09-24 2010-06-17 ショッキング テクノロジーズ，インコーポレイテッド ステップ電圧応答を有する電圧切り換え可能な誘電体材料の組成及び該誘電体材料の製造方法
JP2010504437A (ja) * 2006-09-24 2010-02-12 ショッキング テクノロジーズ インコーポレイテッド 電圧で切替可能な誘電体材料および光補助を用いた基板デバイスをメッキする技法
US20120119168A9 (en) * 2006-11-21 2012-05-17 Robert Fleming Voltage switchable dielectric materials with low band gap polymer binder or composite
US7793236B2 (en) * 2007-06-13 2010-09-07 Shocking Technologies, Inc. System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices
US8203421B2 (en) * 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
US20100047535A1 (en) * 2008-08-22 2010-02-25 Lex Kosowsky Core layer structure having voltage switchable dielectric material
WO2010033635A1 (fr) * 2008-09-17 2010-03-25 Shocking Technologies, Inc. Matériau diélectrique commutable en tension contenant un composé de bore
US9226391B2 (en) * 2009-01-27 2015-12-29 Littelfuse, Inc. Substrates having voltage switchable dielectric materials
US8399773B2 (en) * 2009-01-27 2013-03-19 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US8968606B2 (en) * 2009-03-26 2015-03-03 Littelfuse, Inc. Components having voltage switchable dielectric materials
US9320135B2 (en) * 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components

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Publication number Priority date Publication date Assignee Title
US20060061925A1 (en) * 2004-09-17 2006-03-23 Shrier Karen P Devices and systems for electrostatic discharge suppression
US20060152334A1 (en) * 2005-01-10 2006-07-13 Nathaniel Maercklein Electrostatic discharge protection for embedded components
EP1990834A2 (fr) * 2007-05-10 2008-11-12 Texas Instruments France Intégration locale de feuille non linéaire dans des ensembles de circuits intégrés pour une protection ESD/EOS
US20110211289A1 (en) * 2010-02-26 2011-09-01 Lex Kosowsky Embedded protection against spurious electrical events

Non-Patent Citations (1)

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Title
See also references of WO2013044096A2 *

Also Published As

Publication number Publication date
JP6860718B2 (ja) 2021-04-21
CN103999217A (zh) 2014-08-20
JP2017152711A (ja) 2017-08-31
CN103999217B (zh) 2017-06-06
TW201330710A (zh) 2013-07-16
KR101923760B1 (ko) 2018-11-29
WO2013044096A3 (fr) 2013-07-04
KR20140110838A (ko) 2014-09-17
TWI473542B (zh) 2015-02-11
JP2020080419A (ja) 2020-05-28
EP2758992A2 (fr) 2014-07-30
JP2014535157A (ja) 2014-12-25
WO2013044096A2 (fr) 2013-03-28

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Owner name: LITTELFUSE, INC.

RIN1 Information on inventor provided before grant (corrected)

Inventor name: GLICKMAN, MICHAEL

Inventor name: VASQUEZ, DANIEL

Inventor name: GRAYDON, BHRET

Inventor name: FLEMING, ROBERT

Inventor name: WU, JUNJUN

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