EP2808735A4 - Corps à structure d'irrégularités fines, matériau de réserve thermo-réactif pour gravure chimique à sec, procédé de façonnage de moule et moule - Google Patents

Corps à structure d'irrégularités fines, matériau de réserve thermo-réactif pour gravure chimique à sec, procédé de façonnage de moule et moule

Info

Publication number
EP2808735A4
EP2808735A4 EP13741525.3A EP13741525A EP2808735A4 EP 2808735 A4 EP2808735 A4 EP 2808735A4 EP 13741525 A EP13741525 A EP 13741525A EP 2808735 A4 EP2808735 A4 EP 2808735A4
Authority
EP
European Patent Office
Prior art keywords
mold
thermo
chemical etching
shaping method
dry chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP13741525.3A
Other languages
German (de)
English (en)
Other versions
EP2808735A1 (fr
EP2808735B1 (fr
Inventor
Yoshimichi Mitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Original Assignee
Asahi Kasei E Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei E Materials Corp filed Critical Asahi Kasei E Materials Corp
Publication of EP2808735A1 publication Critical patent/EP2808735A1/fr
Publication of EP2808735A4 publication Critical patent/EP2808735A4/fr
Application granted granted Critical
Publication of EP2808735B1 publication Critical patent/EP2808735B1/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/38Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3842Manufacturing moulds, e.g. shaping the mould surface by machining
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00Subject matter not provided for in other groups of this subclass
    • B81C99/0075Manufacture of substrate-free structures
    • B81C99/0085Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/38Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/42Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/002Component parts, details or accessories; Auxiliary operations
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/04Chromates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0755Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2905/00Use of metals, their alloys or their compounds, as mould material
    • B29K2905/06Tin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29LINDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00Other particular articles
    • B29L2031/757Moulds, cores, dies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612Composite web or sheet

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
EP13741525.3A 2012-01-27 2013-01-24 Produit à structure concave-convexe fines, procédé de façonnage d'un moule et usage d'un matériau de réserve thermo-réactif Not-in-force EP2808735B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012014820 2012-01-27
JP2012128275 2012-06-05
JP2012185252 2012-08-24
PCT/JP2013/051432 WO2013111812A1 (fr) 2012-01-27 2013-01-24 Corps à structure d'irrégularités fines, matériau de réserve thermo-réactif pour gravure chimique à sec, procédé de façonnage de moule et moule

Publications (3)

Publication Number Publication Date
EP2808735A1 EP2808735A1 (fr) 2014-12-03
EP2808735A4 true EP2808735A4 (fr) 2015-07-01
EP2808735B1 EP2808735B1 (fr) 2017-03-22

Family

ID=48873524

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13741525.3A Not-in-force EP2808735B1 (fr) 2012-01-27 2013-01-24 Produit à structure concave-convexe fines, procédé de façonnage d'un moule et usage d'un matériau de réserve thermo-réactif

Country Status (7)

Country Link
US (3) US9623590B2 (fr)
EP (1) EP2808735B1 (fr)
JP (1) JP6105490B2 (fr)
KR (1) KR101614628B1 (fr)
CN (2) CN107255905A (fr)
TW (1) TWI511854B (fr)
WO (1) WO2013111812A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140109105A (ko) * 2013-03-05 2014-09-15 에스케이하이닉스 주식회사 반도체 소자 및 이의 제조 방법
JP6497849B2 (ja) * 2014-04-15 2019-04-10 キヤノン株式会社 インプリント装置、および物品の製造方法
JP6396819B2 (ja) * 2015-02-03 2018-09-26 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN111580190B (zh) * 2015-11-24 2021-12-28 哈佛学院院长及董事 制造针对可见光谱波长的电介质超颖表面的原子层沉积处理
US11835680B2 (en) 2017-05-04 2023-12-05 President And Fellows Of Harvard College Meta-lens doublet for aberration correction
JP7461294B2 (ja) 2017-08-31 2024-04-03 メタレンズ,インコーポレイテッド 透過型メタサーフェスレンズ統合
KR102492733B1 (ko) 2017-09-29 2023-01-27 삼성디스플레이 주식회사 구리 플라즈마 식각 방법 및 디스플레이 패널 제조 방법
JP6956869B2 (ja) * 2018-05-30 2021-11-02 富士フイルム株式会社 パターン原盤、パターン原盤の製造方法、モールドの製造方法および基体の製造方法
CN112399908B (zh) * 2018-06-25 2023-04-07 考里安公司 形成主模、铸模的方法以及制备微结构阵列的方法
EP4004608A4 (fr) 2019-07-26 2023-08-30 Metalenz, Inc. Systèmes d'imagerie à métasurfaces à ouverture et à métasurfaces à réfraction hybrides
EP3964356A1 (fr) * 2020-09-03 2022-03-09 Boegli-Gravures SA Procédé et système de fabrication d'un dispositif de gaufrage à l'aide d'un masque de gravure
CN114025496B (zh) * 2021-11-11 2023-11-07 江苏普诺威电子股份有限公司 Pcb等边三角形的制作方法
KR20240100340A (ko) * 2021-11-16 2024-07-01 제이에스알 가부시끼가이샤 반도체 기판의 제조 방법
CN120188073A (zh) 2022-03-31 2025-06-20 梅特兰兹股份有限公司 偏振分选超颖表面微透镜阵列设备
CN115372409B (zh) * 2022-08-22 2023-08-25 中南大学 同时测量相变材料固、液两相温变热导率的装置及方法
WO2024047256A1 (fr) * 2022-09-02 2024-03-07 Fusion Bionic Gmbh Substrat ayant des propriétés antibuée
US20250279281A1 (en) * 2024-02-29 2025-09-04 Tokyo Electron Limited Halogen gas mixtures for through-substrate etching

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020093906A1 (en) * 2001-01-12 2002-07-18 Takayuki Deno Optical disc substrate and manufacturing method of optical disc master for manufacturing the optical disc substrate

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4810547A (en) * 1986-03-26 1989-03-07 Nippon Sheet Glass Co., Ltd. Substrate with fine grooves and method for manufacturing the same
US5312514A (en) * 1991-11-07 1994-05-17 Microelectronics And Computer Technology Corporation Method of making a field emitter device using randomly located nuclei as an etch mask
JPH09115190A (ja) * 1995-10-13 1997-05-02 Victor Co Of Japan Ltd 光ディスク用スタンパの製造方法
JPH09325486A (ja) * 1996-05-31 1997-12-16 Nippon Synthetic Chem Ind Co Ltd:The 感光性樹脂組成物及びこれを用いた積層体
US6156243A (en) * 1997-04-25 2000-12-05 Hoya Corporation Mold and method of producing the same
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US20020155389A1 (en) * 2000-10-24 2002-10-24 Bharath Rangarajan Inverse resist coating process
DE60238029D1 (de) * 2001-12-27 2010-12-02 Shinetsu Chemical Co Resistzusammensetzung und Musterübertragungsverfahren
US6876559B1 (en) * 2002-02-01 2005-04-05 Netlogic Microsystems, Inc. Block-writable content addressable memory device
JP4055543B2 (ja) 2002-02-22 2008-03-05 ソニー株式会社 レジスト材料及び微細加工方法
US20040115537A1 (en) * 2002-04-19 2004-06-17 Carcia Peter Francis Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks
KR100445707B1 (ko) * 2002-07-06 2004-08-21 삼성전자주식회사 반도체 장치의 평탄막 형성방법
KR20080086925A (ko) * 2002-08-19 2008-09-26 호야 가부시키가이샤 마스크 블랭크의 제조방법, 전사 마스크의 제조방법,마스크 블랭크 제조용 스퍼터링 타깃
US7314688B2 (en) * 2002-09-11 2008-01-01 Hoya Corporation Method of producing a reflection mask blank, method of producing a reflection mask, and method of producing a semiconductor device
US20040159538A1 (en) * 2003-02-13 2004-08-19 Hans Becker Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank
JP2005100602A (ja) 2003-08-26 2005-04-14 Matsushita Electric Ind Co Ltd 記録媒体の原盤製造方法、スタンパ製造方法、記録媒体製造方法、記録媒体の原盤、記録媒体のスタンパ、記録媒体
EP1513144A2 (fr) * 2003-08-26 2005-03-09 Matsushita Electric Industrial Co., Ltd. Procédé de fabrication d'un disque maítre pour support d'enregistrement, procédé de fabrication d'une matrice, procédé de fabrication de support d'enregistrement, disque maítre pour support d'enregistrement, matrice pour support d'enregistrement, et support d'enregistrement
JP2005100608A (ja) * 2003-09-01 2005-04-14 Matsushita Electric Ind Co Ltd 光情報記録媒体用スタンパの製造方法、光情報記録媒体用スタンパ、光情報記録媒体用スタンパの原盤および光情報記録媒体
JP2005100526A (ja) * 2003-09-25 2005-04-14 Hitachi Ltd デバイスの製造方法及び観察方法
US7112286B2 (en) * 2003-12-04 2006-09-26 Texas Instruments Incorporated Thin film resistor structure and method of fabricating a thin film resistor structure
JP2005174425A (ja) * 2003-12-09 2005-06-30 Ricoh Co Ltd 光記録媒体、光記録媒体の再生方法、及び光記録媒体の作製方法
JP2005332452A (ja) * 2004-05-18 2005-12-02 Ricoh Co Ltd 多値romディスク原盤の製造方法、製造装置及び多値romディスク
JP2006012332A (ja) * 2004-06-28 2006-01-12 Tdk Corp ドライエッチング方法、磁気記録媒体の製造方法及び磁気記録媒体
KR100630692B1 (ko) * 2004-07-22 2006-10-02 삼성전자주식회사 포토마스크 및 포토마스크의 투과율 보정 방법
US7713678B2 (en) * 2005-05-30 2010-05-11 Pioneer Corporation Resist material and electron beam recording resist material
KR100772639B1 (ko) * 2005-10-18 2007-11-02 한국기계연구원 다이아몬드상 카본 박막을 이용한 미세 임프린트리소그래피용 스탬프 및 그 제조방법
US20070267764A1 (en) 2005-10-25 2007-11-22 Dai Nippon Printing Co., Ltd. Mold for photocuring nano-imprint and its fabrication process
JP2007144995A (ja) 2005-10-25 2007-06-14 Dainippon Printing Co Ltd 光硬化ナノインプリント用モールド及びその製造方法
CN101075090A (zh) * 2006-05-19 2007-11-21 旭化成电子材料元件株式会社 干膜抗蚀剂
US20080118697A1 (en) * 2006-05-24 2008-05-22 Sony Corporation Stamper, read-only optical disk, and method of making read-only optical disk
JP4738253B2 (ja) 2006-05-29 2011-08-03 住鉱潤滑剤株式会社 潤滑剤中のサリチレートの分析方法
JP4940784B2 (ja) 2006-06-28 2012-05-30 凸版印刷株式会社 インプリント用モールドおよびインプリント用モールド製造方法
JP5009649B2 (ja) * 2007-02-28 2012-08-22 Hoya株式会社 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法
JP2009020962A (ja) * 2007-07-12 2009-01-29 Canon Inc 微細パターンの形成方法及びスタンパ
US8273505B2 (en) * 2007-09-27 2012-09-25 Hoya Corporation Mask blank and method of manufacturing an imprint mold
KR101375445B1 (ko) * 2007-11-07 2014-03-17 쇼와 덴코 가부시키가이샤 에폭시기 함유 오르가노실록산 화합물, 전사 재료용 경화성 조성물 및 상기 조성물을 사용한 미세 패턴 형성 방법
US20110027408A1 (en) * 2008-01-25 2011-02-03 Masaru Suzuki Seamless mold manufacturing method
US20090200266A1 (en) * 2008-02-08 2009-08-13 Molecular Imprints, Inc. Template Pillar Formation
JP4815464B2 (ja) * 2008-03-31 2011-11-16 株式会社日立製作所 微細構造転写スタンパ及び微細構造転写装置
JP4990835B2 (ja) * 2008-04-09 2012-08-01 パイオニア株式会社 凸状構造体作製方法
US7976715B2 (en) * 2008-06-17 2011-07-12 Hitachi Global Storage Technologies Netherlands B.V. Method using block copolymers for making a master mold with high bit-aspect-ratio for nanoimprinting patterned magnetic recording disks
JP5413816B2 (ja) * 2008-06-18 2014-02-12 株式会社ニコン テンプレートの検査方法及び検査装置、ナノインプリント装置、ナノインプリントシステム、並びにデバイス製造方法
CN102089427B (zh) * 2008-07-10 2014-03-12 希森美康株式会社 细胞分散方法、细胞分散剂及细胞测定方法
JP5326404B2 (ja) * 2008-07-29 2013-10-30 富士通株式会社 モールドの製造方法
JP5117318B2 (ja) * 2008-08-07 2013-01-16 株式会社日立ハイテクノロジーズ ナノインプリント用スタンパ及び該スタンパを使用する微細構造転写装置
WO2010021290A1 (fr) * 2008-08-18 2010-02-25 日産化学工業株式会社 Composition de formation d'un film de sous-couche de réserve contenant du silicium avec un groupe onium
JP2010049745A (ja) * 2008-08-21 2010-03-04 Fuji Electric Device Technology Co Ltd ナノインプリント用モールドおよびこれを用いて作製された磁気記録媒体
CN103123443B (zh) * 2008-10-14 2014-11-26 旭化成电子材料株式会社 热反应型抗蚀剂材料、使用它的热光刻用层压体以及使用它们的模具的制造方法
JP2010170019A (ja) * 2009-01-26 2010-08-05 Toshiba Corp リソグラフィ原版の異物除去方法及びリソグラフィ原版の製造方法
JP2010225223A (ja) * 2009-03-23 2010-10-07 Toshiba Corp ガラススタンパの製造方法、ガラススタンパ、および磁気記録媒体の製造方法
US20120135353A1 (en) 2009-07-03 2012-05-31 Hoya Corporation Functionally gradient inorganic resist, substrate with functionally gradient inorganic resist, cylindrical base material with functionally gradient inorganic resist, method for forming functionally gradient inorganic resist and method for forming fine pattern, and inorganic resist and method for forming the same
US8912097B2 (en) * 2009-08-20 2014-12-16 Varian Semiconductor Equipment Associates, Inc. Method and system for patterning a substrate
JP5655296B2 (ja) * 2009-12-01 2015-01-21 セントラル硝子株式会社 エッチングガス
JP4869396B2 (ja) * 2009-12-07 2012-02-08 株式会社東芝 電鋳用原盤、及びその製造方法
JP5677987B2 (ja) * 2010-01-29 2015-02-25 Hoya株式会社 インプリント用モールド及びその製造方法、並びにインプリント用モールド基材
JP5453616B2 (ja) * 2010-04-16 2014-03-26 Hoya株式会社 インプリント用モールドの製造方法
US8841152B2 (en) * 2011-05-19 2014-09-23 Massachusetts Institute Of Technology Method of lift-off patterning thin films in situ employing phase change resists
WO2012173699A1 (fr) * 2011-06-15 2012-12-20 Applied Materials, Inc. Procédés et dispositif pour la réalisation de multiples processus de développement de couches de résine photosensible et de gravure
JP5999372B2 (ja) * 2011-07-20 2016-09-28 日産化学工業株式会社 チタン及びシリコン含有リソグラフィー用薄膜形成組成物
US20130026136A1 (en) * 2011-07-29 2013-01-31 Qualcomm Mems Technologies, Inc. Sputter-etch tool and liners
TWI489522B (zh) * 2012-03-12 2015-06-21 旭化成電子材料股份有限公司 Mold, resist layer and its manufacturing method and concave and convex structure
JP6070720B2 (ja) * 2012-12-13 2017-02-01 王子ホールディングス株式会社 光学素子作製用金型の製造方法、及び光学素子の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020093906A1 (en) * 2001-01-12 2002-07-18 Takayuki Deno Optical disc substrate and manufacturing method of optical disc master for manufacturing the optical disc substrate

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US9701044B2 (en) 2017-07-11
TW201334937A (zh) 2013-09-01
US9597822B2 (en) 2017-03-21
EP2808735A1 (fr) 2014-12-03
US20150017275A1 (en) 2015-01-15
EP2808735B1 (fr) 2017-03-22
KR101614628B1 (ko) 2016-04-21
WO2013111812A1 (fr) 2013-08-01
KR20140047154A (ko) 2014-04-21
CN104067171A (zh) 2014-09-24
JP6105490B2 (ja) 2017-03-29
US9623590B2 (en) 2017-04-18
US20150183152A1 (en) 2015-07-02
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JPWO2013111812A1 (ja) 2015-05-11
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