EP2808735A4 - Corps à structure d'irrégularités fines, matériau de réserve thermo-réactif pour gravure chimique à sec, procédé de façonnage de moule et moule - Google Patents
Corps à structure d'irrégularités fines, matériau de réserve thermo-réactif pour gravure chimique à sec, procédé de façonnage de moule et mouleInfo
- Publication number
- EP2808735A4 EP2808735A4 EP13741525.3A EP13741525A EP2808735A4 EP 2808735 A4 EP2808735 A4 EP 2808735A4 EP 13741525 A EP13741525 A EP 13741525A EP 2808735 A4 EP2808735 A4 EP 2808735A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- mold
- thermo
- chemical etching
- shaping method
- dry chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/002—Component parts, details or accessories; Auxiliary operations
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/04—Chromates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2905/00—Use of metals, their alloys or their compounds, as mould material
- B29K2905/06—Tin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/757—Moulds, cores, dies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012014820 | 2012-01-27 | ||
| JP2012128275 | 2012-06-05 | ||
| JP2012185252 | 2012-08-24 | ||
| PCT/JP2013/051432 WO2013111812A1 (fr) | 2012-01-27 | 2013-01-24 | Corps à structure d'irrégularités fines, matériau de réserve thermo-réactif pour gravure chimique à sec, procédé de façonnage de moule et moule |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP2808735A1 EP2808735A1 (fr) | 2014-12-03 |
| EP2808735A4 true EP2808735A4 (fr) | 2015-07-01 |
| EP2808735B1 EP2808735B1 (fr) | 2017-03-22 |
Family
ID=48873524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP13741525.3A Not-in-force EP2808735B1 (fr) | 2012-01-27 | 2013-01-24 | Produit à structure concave-convexe fines, procédé de façonnage d'un moule et usage d'un matériau de réserve thermo-réactif |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US9623590B2 (fr) |
| EP (1) | EP2808735B1 (fr) |
| JP (1) | JP6105490B2 (fr) |
| KR (1) | KR101614628B1 (fr) |
| CN (2) | CN107255905A (fr) |
| TW (1) | TWI511854B (fr) |
| WO (1) | WO2013111812A1 (fr) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140109105A (ko) * | 2013-03-05 | 2014-09-15 | 에스케이하이닉스 주식회사 | 반도체 소자 및 이의 제조 방법 |
| JP6497849B2 (ja) * | 2014-04-15 | 2019-04-10 | キヤノン株式会社 | インプリント装置、および物品の製造方法 |
| JP6396819B2 (ja) * | 2015-02-03 | 2018-09-26 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| CN111580190B (zh) * | 2015-11-24 | 2021-12-28 | 哈佛学院院长及董事 | 制造针对可见光谱波长的电介质超颖表面的原子层沉积处理 |
| US11835680B2 (en) | 2017-05-04 | 2023-12-05 | President And Fellows Of Harvard College | Meta-lens doublet for aberration correction |
| JP7461294B2 (ja) | 2017-08-31 | 2024-04-03 | メタレンズ,インコーポレイテッド | 透過型メタサーフェスレンズ統合 |
| KR102492733B1 (ko) | 2017-09-29 | 2023-01-27 | 삼성디스플레이 주식회사 | 구리 플라즈마 식각 방법 및 디스플레이 패널 제조 방법 |
| JP6956869B2 (ja) * | 2018-05-30 | 2021-11-02 | 富士フイルム株式会社 | パターン原盤、パターン原盤の製造方法、モールドの製造方法および基体の製造方法 |
| CN112399908B (zh) * | 2018-06-25 | 2023-04-07 | 考里安公司 | 形成主模、铸模的方法以及制备微结构阵列的方法 |
| EP4004608A4 (fr) | 2019-07-26 | 2023-08-30 | Metalenz, Inc. | Systèmes d'imagerie à métasurfaces à ouverture et à métasurfaces à réfraction hybrides |
| EP3964356A1 (fr) * | 2020-09-03 | 2022-03-09 | Boegli-Gravures SA | Procédé et système de fabrication d'un dispositif de gaufrage à l'aide d'un masque de gravure |
| CN114025496B (zh) * | 2021-11-11 | 2023-11-07 | 江苏普诺威电子股份有限公司 | Pcb等边三角形的制作方法 |
| KR20240100340A (ko) * | 2021-11-16 | 2024-07-01 | 제이에스알 가부시끼가이샤 | 반도체 기판의 제조 방법 |
| CN120188073A (zh) | 2022-03-31 | 2025-06-20 | 梅特兰兹股份有限公司 | 偏振分选超颖表面微透镜阵列设备 |
| CN115372409B (zh) * | 2022-08-22 | 2023-08-25 | 中南大学 | 同时测量相变材料固、液两相温变热导率的装置及方法 |
| WO2024047256A1 (fr) * | 2022-09-02 | 2024-03-07 | Fusion Bionic Gmbh | Substrat ayant des propriétés antibuée |
| US20250279281A1 (en) * | 2024-02-29 | 2025-09-04 | Tokyo Electron Limited | Halogen gas mixtures for through-substrate etching |
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| JP2010049745A (ja) * | 2008-08-21 | 2010-03-04 | Fuji Electric Device Technology Co Ltd | ナノインプリント用モールドおよびこれを用いて作製された磁気記録媒体 |
| CN103123443B (zh) * | 2008-10-14 | 2014-11-26 | 旭化成电子材料株式会社 | 热反应型抗蚀剂材料、使用它的热光刻用层压体以及使用它们的模具的制造方法 |
| JP2010170019A (ja) * | 2009-01-26 | 2010-08-05 | Toshiba Corp | リソグラフィ原版の異物除去方法及びリソグラフィ原版の製造方法 |
| JP2010225223A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | ガラススタンパの製造方法、ガラススタンパ、および磁気記録媒体の製造方法 |
| US20120135353A1 (en) | 2009-07-03 | 2012-05-31 | Hoya Corporation | Functionally gradient inorganic resist, substrate with functionally gradient inorganic resist, cylindrical base material with functionally gradient inorganic resist, method for forming functionally gradient inorganic resist and method for forming fine pattern, and inorganic resist and method for forming the same |
| US8912097B2 (en) * | 2009-08-20 | 2014-12-16 | Varian Semiconductor Equipment Associates, Inc. | Method and system for patterning a substrate |
| JP5655296B2 (ja) * | 2009-12-01 | 2015-01-21 | セントラル硝子株式会社 | エッチングガス |
| JP4869396B2 (ja) * | 2009-12-07 | 2012-02-08 | 株式会社東芝 | 電鋳用原盤、及びその製造方法 |
| JP5677987B2 (ja) * | 2010-01-29 | 2015-02-25 | Hoya株式会社 | インプリント用モールド及びその製造方法、並びにインプリント用モールド基材 |
| JP5453616B2 (ja) * | 2010-04-16 | 2014-03-26 | Hoya株式会社 | インプリント用モールドの製造方法 |
| US8841152B2 (en) * | 2011-05-19 | 2014-09-23 | Massachusetts Institute Of Technology | Method of lift-off patterning thin films in situ employing phase change resists |
| WO2012173699A1 (fr) * | 2011-06-15 | 2012-12-20 | Applied Materials, Inc. | Procédés et dispositif pour la réalisation de multiples processus de développement de couches de résine photosensible et de gravure |
| JP5999372B2 (ja) * | 2011-07-20 | 2016-09-28 | 日産化学工業株式会社 | チタン及びシリコン含有リソグラフィー用薄膜形成組成物 |
| US20130026136A1 (en) * | 2011-07-29 | 2013-01-31 | Qualcomm Mems Technologies, Inc. | Sputter-etch tool and liners |
| TWI489522B (zh) * | 2012-03-12 | 2015-06-21 | 旭化成電子材料股份有限公司 | Mold, resist layer and its manufacturing method and concave and convex structure |
| JP6070720B2 (ja) * | 2012-12-13 | 2017-02-01 | 王子ホールディングス株式会社 | 光学素子作製用金型の製造方法、及び光学素子の製造方法 |
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2013
- 2013-01-24 JP JP2013555301A patent/JP6105490B2/ja not_active Expired - Fee Related
- 2013-01-24 KR KR1020147005988A patent/KR101614628B1/ko not_active Expired - Fee Related
- 2013-01-24 CN CN201710427919.2A patent/CN107255905A/zh active Pending
- 2013-01-24 CN CN201380006584.7A patent/CN104067171A/zh active Pending
- 2013-01-24 WO PCT/JP2013/051432 patent/WO2013111812A1/fr not_active Ceased
- 2013-01-24 US US14/374,686 patent/US9623590B2/en not_active Expired - Fee Related
- 2013-01-24 EP EP13741525.3A patent/EP2808735B1/fr not_active Not-in-force
- 2013-01-25 TW TW102102990A patent/TWI511854B/zh not_active IP Right Cessation
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2015
- 2015-03-12 US US14/656,012 patent/US9701044B2/en not_active Expired - Fee Related
- 2015-03-12 US US14/656,091 patent/US9597822B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020093906A1 (en) * | 2001-01-12 | 2002-07-18 | Takayuki Deno | Optical disc substrate and manufacturing method of optical disc master for manufacturing the optical disc substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150183136A1 (en) | 2015-07-02 |
| US9701044B2 (en) | 2017-07-11 |
| TW201334937A (zh) | 2013-09-01 |
| US9597822B2 (en) | 2017-03-21 |
| EP2808735A1 (fr) | 2014-12-03 |
| US20150017275A1 (en) | 2015-01-15 |
| EP2808735B1 (fr) | 2017-03-22 |
| KR101614628B1 (ko) | 2016-04-21 |
| WO2013111812A1 (fr) | 2013-08-01 |
| KR20140047154A (ko) | 2014-04-21 |
| CN104067171A (zh) | 2014-09-24 |
| JP6105490B2 (ja) | 2017-03-29 |
| US9623590B2 (en) | 2017-04-18 |
| US20150183152A1 (en) | 2015-07-02 |
| TWI511854B (zh) | 2015-12-11 |
| JPWO2013111812A1 (ja) | 2015-05-11 |
| CN107255905A (zh) | 2017-10-17 |
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