EP2980832A4 - Markierungsformungsverfahren, markierungserkennungsverfahren und vorrichtungsherstellungsverfahren - Google Patents
Markierungsformungsverfahren, markierungserkennungsverfahren und vorrichtungsherstellungsverfahren Download PDFInfo
- Publication number
- EP2980832A4 EP2980832A4 EP14774072.4A EP14774072A EP2980832A4 EP 2980832 A4 EP2980832 A4 EP 2980832A4 EP 14774072 A EP14774072 A EP 14774072A EP 2980832 A4 EP2980832 A4 EP 2980832A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- mark
- device manufacturing
- mark detecting
- mark forming
- forming method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials
- H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
- H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/101—Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
- H10W46/503—Located in scribe lines
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013067696 | 2013-03-27 | ||
| PCT/JP2014/058393 WO2014157262A1 (ja) | 2013-03-27 | 2014-03-25 | マーク形成方法、マーク検出方法、及びデバイス製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP2980832A1 EP2980832A1 (de) | 2016-02-03 |
| EP2980832A4 true EP2980832A4 (de) | 2017-03-01 |
Family
ID=51624228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP14774072.4A Withdrawn EP2980832A4 (de) | 2013-03-27 | 2014-03-25 | Markierungsformungsverfahren, markierungserkennungsverfahren und vorrichtungsherstellungsverfahren |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9972574B2 (de) |
| EP (1) | EP2980832A4 (de) |
| JP (2) | JP6269982B2 (de) |
| KR (2) | KR101951989B1 (de) |
| CN (1) | CN105378892B (de) |
| HK (2) | HK1219174A1 (de) |
| TW (1) | TWI672788B (de) |
| WO (1) | WO2014157262A1 (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015015424A (ja) * | 2013-07-08 | 2015-01-22 | 株式会社東芝 | 位置合わせマーク、フォトマスク、および位置合わせマークの形成方法 |
| CN107924844B (zh) * | 2016-03-24 | 2021-07-20 | 东京毅力科创株式会社 | 半导体装置的制造方法 |
| US11056410B2 (en) * | 2017-03-31 | 2021-07-06 | National Institute Of Advanced Industrial Science And Technology | Method of manufacturing semiconductor package using alignment mark on wafer |
| US10103166B1 (en) | 2017-04-10 | 2018-10-16 | Macronix International Co., Ltd. | Semiconductor device and critical dimension defining method thereof |
| US10705435B2 (en) * | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| CN108899288B (zh) * | 2018-07-20 | 2020-11-13 | 上海华虹宏力半导体制造有限公司 | 晶圆标记的监控方法和激光刻号机台对准位置的判定方法 |
| KR102498631B1 (ko) * | 2018-08-16 | 2023-02-10 | 주식회사 엘지화학 | 패턴화 기판의 제조 방법 |
| JP2020041859A (ja) * | 2018-09-07 | 2020-03-19 | キオクシア株式会社 | 位置計測方法、位置計測装置および半導体装置の製造方法 |
| KR102629290B1 (ko) | 2018-12-13 | 2024-01-29 | 삼성디스플레이 주식회사 | 표시 장치 제조 방법 |
| TW202027189A (zh) * | 2019-01-07 | 2020-07-16 | 力晶積成電子製造股份有限公司 | 晶粒的標記方法、晶圓及晶粒 |
| TWI699580B (zh) * | 2019-03-07 | 2020-07-21 | 友達光電股份有限公司 | 陣列基板 |
| TWI786554B (zh) * | 2020-02-27 | 2022-12-11 | 台灣積體電路製造股份有限公司 | 疊對誤差量測方法及疊對誤差量測結構 |
| CN111314391B (zh) * | 2020-03-31 | 2022-03-08 | 四川九强通信科技有限公司 | 基于区块链的卫星网络安全路由方法 |
| TWI736317B (zh) * | 2020-06-12 | 2021-08-11 | 華邦電子股份有限公司 | 用於黃光製程的辨識方法與半導體元件 |
| CN113871290B (zh) * | 2020-06-30 | 2025-05-13 | 华邦电子股份有限公司 | 用于光刻工艺的识别方法与半导体元件 |
| JP7607423B2 (ja) * | 2020-09-23 | 2024-12-27 | キヤノン株式会社 | リソグラフィ装置の制御方法、リソグラフィ装置、および物品製造方法 |
| KR102860314B1 (ko) | 2021-10-08 | 2025-09-16 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
| US12265335B2 (en) * | 2022-09-21 | 2025-04-01 | Micron Technology, Inc. | Alignment-overlay mark and method using the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110287630A1 (en) * | 2009-11-19 | 2011-11-24 | Micron Technology, Inc. | Methods of Processing Semiconductor Substrates In Forming Scribe Line Alignment Marks |
| WO2011151109A1 (en) * | 2010-06-04 | 2011-12-08 | Asml Netherlands B.V. | Self-assemblable polymer and method for use in lithography |
Family Cites Families (34)
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|---|---|---|---|---|
| KR950033689A (ko) * | 1994-03-02 | 1995-12-26 | 오노 시게오 | 노광장치 및 이를 이용한 회로패턴 형성방법 |
| JP3451603B2 (ja) * | 1994-06-16 | 2003-09-29 | 株式会社ニコン | 露光方法及び該露光方法に使用されるマスク |
| JP2638528B2 (ja) * | 1994-12-19 | 1997-08-06 | 株式会社ニコン | 位置合わせ方法 |
| JP2001126981A (ja) * | 1999-08-19 | 2001-05-11 | Nikon Corp | マーク検出方法及びマーク検出装置、露光方法及び露光装置、並びにデバイス |
| KR20010085493A (ko) | 2000-02-25 | 2001-09-07 | 시마무라 기로 | 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법 |
| JP2004087562A (ja) * | 2002-08-23 | 2004-03-18 | Nikon Corp | 位置検出方法及びその装置、露光方法及びその装置、並びにデバイス製造方法 |
| JP2004296921A (ja) * | 2003-03-27 | 2004-10-21 | Canon Inc | 位置検出装置 |
| US7235348B2 (en) * | 2003-05-22 | 2007-06-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Water soluble negative tone photoresist |
| US7145641B2 (en) * | 2003-12-31 | 2006-12-05 | Asml Netherlands, B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| JP2006114859A (ja) * | 2004-01-21 | 2006-04-27 | Seiko Epson Corp | アライメント方法、薄膜形成基板の製造方法、半導体装置の製造方法、及び電子機器の製造方法 |
| CN103605262B (zh) | 2004-06-09 | 2016-06-29 | 株式会社尼康 | 曝光装置及其维护方法、以及元件制造方法 |
| JP2006216796A (ja) * | 2005-02-03 | 2006-08-17 | Nikon Corp | 基準パターン情報の作成方法、位置計測方法、位置計測装置、露光方法、及び露光装置 |
| US7579278B2 (en) * | 2006-03-23 | 2009-08-25 | Micron Technology, Inc. | Topography directed patterning |
| JP4673266B2 (ja) * | 2006-08-03 | 2011-04-20 | 日本電信電話株式会社 | パターン形成方法及びモールド |
| JP2008053618A (ja) | 2006-08-28 | 2008-03-06 | Canon Inc | 露光装置及び方法並びに該露光装置を用いたデバイス製造方法 |
| KR101292803B1 (ko) * | 2006-12-06 | 2013-08-02 | 엘아이지에이디피 주식회사 | 기판 합착장치의 간격유지유닛 |
| US8083953B2 (en) * | 2007-03-06 | 2011-12-27 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
| KR101291223B1 (ko) * | 2007-08-09 | 2013-07-31 | 한국과학기술원 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
| CN101383268B (zh) * | 2007-09-07 | 2010-09-15 | 中国科学院微电子研究所 | 一种电子束对准标记的制作方法 |
| KR101355167B1 (ko) * | 2007-12-14 | 2014-01-28 | 삼성전자주식회사 | 적어도 세 개의 고분자 블록을 구비하는 블록 공중합체를이용한 미세 패턴 형성 방법 |
| NL1036351A1 (nl) * | 2007-12-31 | 2009-07-01 | Asml Netherlands Bv | Alignment system and alignment marks for use therewith cross-reference to related applications. |
| US20100092599A1 (en) * | 2008-10-10 | 2010-04-15 | Molecular Imprints, Inc. | Complementary Alignment Marks for Imprint Lithography |
| JP5507875B2 (ja) | 2009-04-14 | 2014-05-28 | キヤノン株式会社 | 露光装置、露光方法およびデバイス製造方法 |
| US8114306B2 (en) | 2009-05-22 | 2012-02-14 | International Business Machines Corporation | Method of forming sub-lithographic features using directed self-assembly of polymers |
| US8329360B2 (en) * | 2009-12-04 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus of providing overlay |
| WO2011104045A1 (en) * | 2010-02-26 | 2011-09-01 | Asml Netherlands B.V. | Method and apparatus for treatment of self-assemblable polymer layers for use in lithography |
| WO2011128120A1 (en) * | 2010-04-14 | 2011-10-20 | Asml Netherlands B.V. | Method for providing an ordered layer of self-assemblable polymer for use in lithography |
| JP2012038794A (ja) * | 2010-08-04 | 2012-02-23 | Nikon Corp | 検出条件最適化方法、プログラム作成方法、並びに露光装置及びマーク検出装置 |
| JP5885143B2 (ja) * | 2010-10-07 | 2016-03-15 | 東京応化工業株式会社 | ガイドパターン形成用ネガ型現像用レジスト組成物、ガイドパターン形成方法、ブロックコポリマーを含む層のパターン形成方法 |
| US20120164389A1 (en) * | 2010-12-28 | 2012-06-28 | Yang Xiaomin | Imprint template fabrication and repair based on directed block copolymer assembly |
| WO2014010592A1 (ja) * | 2012-07-10 | 2014-01-16 | 株式会社ニコン | マーク形成方法及びデバイス製造方法 |
| US9034197B2 (en) * | 2012-09-13 | 2015-05-19 | HGST Netherlands B.V. | Method for separately processing regions on a patterned medium |
| JP2014072313A (ja) * | 2012-09-28 | 2014-04-21 | Toshiba Corp | アライメント計測システム、重ね合わせ計測システム及び半導体装置の製造方法 |
| JP5768074B2 (ja) * | 2013-02-28 | 2015-08-26 | 株式会社東芝 | パターン形成方法 |
-
2014
- 2014-03-24 TW TW103110856A patent/TWI672788B/zh active
- 2014-03-25 KR KR1020157030275A patent/KR101951989B1/ko active Active
- 2014-03-25 EP EP14774072.4A patent/EP2980832A4/de not_active Withdrawn
- 2014-03-25 KR KR1020197004468A patent/KR20190018560A/ko not_active Ceased
- 2014-03-25 WO PCT/JP2014/058393 patent/WO2014157262A1/ja not_active Ceased
- 2014-03-25 CN CN201480027077.6A patent/CN105378892B/zh active Active
- 2014-03-25 HK HK16107167.4A patent/HK1219174A1/en unknown
- 2014-03-25 HK HK16108419.8A patent/HK1220544A1/zh unknown
- 2014-03-25 JP JP2015508566A patent/JP6269982B2/ja active Active
-
2015
- 2015-09-24 US US14/863,938 patent/US9972574B2/en active Active
-
2017
- 2017-12-27 JP JP2017250969A patent/JP6687910B2/ja active Active
-
2018
- 2018-02-23 US US15/903,538 patent/US10354959B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110287630A1 (en) * | 2009-11-19 | 2011-11-24 | Micron Technology, Inc. | Methods of Processing Semiconductor Substrates In Forming Scribe Line Alignment Marks |
| WO2011151109A1 (en) * | 2010-06-04 | 2011-12-08 | Asml Netherlands B.V. | Self-assemblable polymer and method for use in lithography |
Non-Patent Citations (1)
| Title |
|---|
| See also references of WO2014157262A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160079179A1 (en) | 2016-03-17 |
| JP6269982B2 (ja) | 2018-01-31 |
| EP2980832A1 (de) | 2016-02-03 |
| HK1219174A1 (en) | 2017-03-24 |
| CN105378892B (zh) | 2018-05-08 |
| US9972574B2 (en) | 2018-05-15 |
| US20180182713A1 (en) | 2018-06-28 |
| HK1220544A1 (zh) | 2017-05-05 |
| TWI672788B (zh) | 2019-09-21 |
| TW201508893A (zh) | 2015-03-01 |
| KR20190018560A (ko) | 2019-02-22 |
| JPWO2014157262A1 (ja) | 2017-02-16 |
| JP2018078321A (ja) | 2018-05-17 |
| KR20150136503A (ko) | 2015-12-07 |
| JP6687910B2 (ja) | 2020-04-28 |
| CN105378892A (zh) | 2016-03-02 |
| WO2014157262A1 (ja) | 2014-10-02 |
| US10354959B2 (en) | 2019-07-16 |
| KR101951989B1 (ko) | 2019-02-25 |
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