EP3127143A4 - Methods of recycling substrates and carrier substrates - Google Patents

Methods of recycling substrates and carrier substrates Download PDF

Info

Publication number
EP3127143A4
EP3127143A4 EP15773434.4A EP15773434A EP3127143A4 EP 3127143 A4 EP3127143 A4 EP 3127143A4 EP 15773434 A EP15773434 A EP 15773434A EP 3127143 A4 EP3127143 A4 EP 3127143A4
Authority
EP
European Patent Office
Prior art keywords
substrates
methods
recycling
carrier
carrier substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15773434.4A
Other languages
German (de)
French (fr)
Other versions
EP3127143A1 (en
Inventor
Hilmi Volkan Demir
Swee Tiam TAN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanyang Technological University
Original Assignee
Nanyang Technological University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanyang Technological University filed Critical Nanyang Technological University
Publication of EP3127143A1 publication Critical patent/EP3127143A1/en
Publication of EP3127143A4 publication Critical patent/EP3127143A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
EP15773434.4A 2014-03-31 2015-02-16 Methods of recycling substrates and carrier substrates Withdrawn EP3127143A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461972575P 2014-03-31 2014-03-31
PCT/SG2015/000048 WO2015152817A1 (en) 2014-03-31 2015-02-16 Methods of recycling substrates and carrier substrates

Publications (2)

Publication Number Publication Date
EP3127143A1 EP3127143A1 (en) 2017-02-08
EP3127143A4 true EP3127143A4 (en) 2017-11-29

Family

ID=54240965

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15773434.4A Withdrawn EP3127143A4 (en) 2014-03-31 2015-02-16 Methods of recycling substrates and carrier substrates

Country Status (5)

Country Link
EP (1) EP3127143A4 (en)
CN (1) CN106463451B (en)
EA (1) EA201691900A1 (en)
TW (1) TW201601192A (en)
WO (1) WO2015152817A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7059518B2 (en) * 2017-04-03 2022-04-26 住友電気工業株式会社 Method for manufacturing semiconductor optical devices
CN109037263A (en) * 2017-06-09 2018-12-18 美商晶典有限公司 Micro- light-emitting diode display module and its manufacturing method with light-transmitting substrate
CN109728142B (en) * 2017-10-31 2021-02-02 展晶科技(深圳)有限公司 Method for manufacturing light emitting diode crystal grain
GB2593698B (en) 2020-03-30 2022-12-07 Plessey Semiconductors Ltd Monolithic electronic device
JP7531151B2 (en) * 2020-04-15 2024-08-09 国立大学法人東海国立大学機構 Method for manufacturing a gallium nitride semiconductor device
CN112967992B (en) * 2020-12-07 2022-09-23 重庆康佳光电技术研究院有限公司 Transfer method of epitaxial structure
TWI741911B (en) * 2020-12-16 2021-10-01 環球晶圓股份有限公司 Method for removing epitaxial layer
CN112786762B (en) * 2021-01-04 2022-05-17 华灿光电（浙江）有限公司 Light emitting diode epitaxial wafer and preparation method thereof
CN113257971B (en) * 2021-06-30 2021-10-22 南昌凯捷半导体科技有限公司 Manufacturing method of red light mini-LED chip

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080038857A1 (en) * 2006-08-11 2008-02-14 Samsung Electro-Mechanics Co., Ltd Method of manufacturing nitride-based semiconductor light-emitting device
US20090253249A1 (en) * 2008-04-07 2009-10-08 Sony Corporation Method of manufacturing semiconductor device
US20120107962A1 (en) * 2010-11-01 2012-05-03 National Cheng Kung University Method of fabricating epitaxial semiconductor devices
US20130048945A1 (en) * 2011-08-22 2013-02-28 Lextar Electronics Corporation Light-emitting semiconductor structure and method for fabricating light-emitting diode device
US20130214284A1 (en) * 2012-02-17 2013-08-22 The Regents Of The University Of California Method for the reuse of gallium nitride epitaxial substrates

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US8236583B2 (en) * 2008-09-10 2012-08-07 Tsmc Solid State Lighting Ltd. Method of separating light-emitting diode from a growth substrate
US8581229B2 (en) * 2009-11-23 2013-11-12 Koninklijke Philips N.V. III-V light emitting device with thin n-type region
US7781242B1 (en) * 2009-12-10 2010-08-24 Walsin Lihwa Corporation Method of forming vertical structure light emitting diode with heat exhaustion structure
WO2013004188A1 (en) * 2011-07-07 2013-01-10 厦门市三安光电科技有限公司 Solar cell, system, and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080038857A1 (en) * 2006-08-11 2008-02-14 Samsung Electro-Mechanics Co., Ltd Method of manufacturing nitride-based semiconductor light-emitting device
US20090253249A1 (en) * 2008-04-07 2009-10-08 Sony Corporation Method of manufacturing semiconductor device
US20120107962A1 (en) * 2010-11-01 2012-05-03 National Cheng Kung University Method of fabricating epitaxial semiconductor devices
US20130048945A1 (en) * 2011-08-22 2013-02-28 Lextar Electronics Corporation Light-emitting semiconductor structure and method for fabricating light-emitting diode device
US20130214284A1 (en) * 2012-02-17 2013-08-22 The Regents Of The University Of California Method for the reuse of gallium nitride epitaxial substrates

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2015152817A1 *

Also Published As

Publication number Publication date
EA201691900A1 (en) 2017-05-31
CN106463451B (en) 2019-07-16
WO2015152817A1 (en) 2015-10-08
CN106463451A (en) 2017-02-22
EP3127143A1 (en) 2017-02-08
TW201601192A (en) 2016-01-01

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A4 Supplementary search report drawn up and despatched

Effective date: 20171030

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