EP3143648A4 - Verfahren zur herstellung einer lichtemittierenden vorrichtung - Google Patents

Verfahren zur herstellung einer lichtemittierenden vorrichtung Download PDF

Info

Publication number
EP3143648A4
EP3143648A4 EP15792197.4A EP15792197A EP3143648A4 EP 3143648 A4 EP3143648 A4 EP 3143648A4 EP 15792197 A EP15792197 A EP 15792197A EP 3143648 A4 EP3143648 A4 EP 3143648A4
Authority
EP
European Patent Office
Prior art keywords
light
forming
emitting device
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15792197.4A
Other languages
English (en)
French (fr)
Other versions
EP3143648A1 (de
Inventor
Zhengang JU
Wei Liu
Xueliang ZHANG
Swee Tiam TAN
Yun JI
Zi-hui ZHANG
Hilmi Volkan Demir
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanyang Technological University
Original Assignee
Nanyang Technological University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanyang Technological University filed Critical Nanyang Technological University
Publication of EP3143648A1 publication Critical patent/EP3143648A1/de
Publication of EP3143648A4 publication Critical patent/EP3143648A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
EP15792197.4A 2014-05-14 2015-05-07 Verfahren zur herstellung einer lichtemittierenden vorrichtung Withdrawn EP3143648A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461996662P 2014-05-14 2014-05-14
PCT/SG2015/050100 WO2015174924A1 (en) 2014-05-14 2015-05-07 Method of forming a light-emitting device

Publications (2)

Publication Number Publication Date
EP3143648A1 EP3143648A1 (de) 2017-03-22
EP3143648A4 true EP3143648A4 (de) 2017-09-27

Family

ID=54480318

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15792197.4A Withdrawn EP3143648A4 (de) 2014-05-14 2015-05-07 Verfahren zur herstellung einer lichtemittierenden vorrichtung

Country Status (4)

Country Link
EP (1) EP3143648A4 (de)
CN (1) CN106463596B (de)
TW (1) TW201547053A (de)
WO (1) WO2015174924A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017106410A1 (de) * 2017-03-24 2018-09-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
TWI633681B (zh) * 2017-06-09 2018-08-21 美商晶典有限公司 微發光二極體顯示模組的製造方法
CN107293623A (zh) * 2017-07-12 2017-10-24 厦门乾照光电股份有限公司 一种led芯片及其制备方法
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
CN111933765B (zh) * 2020-07-03 2022-04-26 厦门士兰明镓化合物半导体有限公司 微型发光二极管及制作方法，微型led显示模块及制作方法
WO2022011635A1 (zh) * 2020-07-16 2022-01-20 苏州晶湛半导体有限公司 半导体结构及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070126016A1 (en) * 2005-05-12 2007-06-07 Epistar Corporation Light emitting device and manufacture method thereof
EP2194586A1 (de) * 2008-12-08 2010-06-09 Kabushiki Kaisha Toshiba Halbleiterbauelement und Verfahren zu seiner Herstellung
US20110291148A1 (en) * 2010-05-26 2011-12-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US20130015483A1 (en) * 2011-07-12 2013-01-17 Kabushiki Kaisha Toshiba Semiconductor light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070126016A1 (en) * 2005-05-12 2007-06-07 Epistar Corporation Light emitting device and manufacture method thereof
EP2194586A1 (de) * 2008-12-08 2010-06-09 Kabushiki Kaisha Toshiba Halbleiterbauelement und Verfahren zu seiner Herstellung
US20110291148A1 (en) * 2010-05-26 2011-12-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US20130015483A1 (en) * 2011-07-12 2013-01-17 Kabushiki Kaisha Toshiba Semiconductor light emitting device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2015174924A1 *

Also Published As

Publication number Publication date
CN106463596B (zh) 2019-07-09
EP3143648A1 (de) 2017-03-22
TW201547053A (zh) 2015-12-16
WO2015174924A1 (en) 2015-11-19
CN106463596A (zh) 2017-02-22

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