EP3146567A4 - Verarbeitung von organischen ferroelektrischen dünnschichtmaterialien mithilfe gepulster elektromagnetischer strahlung - Google Patents

Verarbeitung von organischen ferroelektrischen dünnschichtmaterialien mithilfe gepulster elektromagnetischer strahlung Download PDF

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Publication number
EP3146567A4
EP3146567A4 EP15806362.8A EP15806362A EP3146567A4 EP 3146567 A4 EP3146567 A4 EP 3146567A4 EP 15806362 A EP15806362 A EP 15806362A EP 3146567 A4 EP3146567 A4 EP 3146567A4
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EP
European Patent Office
Prior art keywords
processing
thin film
electromagnetic radiation
ferroelectric materials
pulsed electromagnetic
Prior art date
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Application number
EP15806362.8A
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English (en)
French (fr)
Other versions
EP3146567B1 (de
EP3146567A1 (de
Inventor
Mahmoud N. ALMADHOUN
Ihab N. ODEN
Mohd Adnan KHAN
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SABIC Global Technologies BV
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SABIC Global Technologies BV
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Publication of EP3146567A4 publication Critical patent/EP3146567A4/de
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D127/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers
    • C09D127/02—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment
    • C09D127/12—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C09D127/16—Homopolymers or copolymers of vinylidene fluoride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/098—Forming organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/802—Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
EP15806362.8A 2014-06-09 2015-05-19 Verarbeitung von organischen ferroelektrischen dünnschichtmaterialien mithilfe gepulster elektromagnetischer strahlung Not-in-force EP3146567B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462009729P 2014-06-09 2014-06-09
US201562112203P 2015-02-05 2015-02-05
PCT/US2015/031522 WO2015191254A1 (en) 2014-06-09 2015-05-19 Processing of thin film organic ferroelectric materials using pulsed electromagnetic radiation

Publications (3)

Publication Number Publication Date
EP3146567A1 EP3146567A1 (de) 2017-03-29
EP3146567A4 true EP3146567A4 (de) 2017-05-03
EP3146567B1 EP3146567B1 (de) 2018-06-20

Family

ID=54834096

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15806362.8A Not-in-force EP3146567B1 (de) 2014-06-09 2015-05-19 Verarbeitung von organischen ferroelektrischen dünnschichtmaterialien mithilfe gepulster elektromagnetischer strahlung

Country Status (5)

Country Link
US (1) US10035922B2 (de)
EP (1) EP3146567B1 (de)
KR (1) KR101872632B1 (de)
CN (1) CN106575575B (de)
WO (1) WO2015191254A1 (de)

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FR3013510B1 (fr) * 2013-11-15 2017-05-05 Commissariat Energie Atomique Procede de fabrication d'un dispositif pyroelectrique et/ou piezoelectrique
US9786345B1 (en) * 2016-09-16 2017-10-10 Micron Technology, Inc. Compensation for threshold voltage variation of memory cell components
GB2561199B (en) * 2017-04-04 2022-04-20 Power Roll Ltd Method
US12225822B2 (en) 2017-11-30 2025-02-11 Jabil Inc. System for manufacturing piezoelectronics
CN108231949B (zh) * 2017-12-14 2020-05-15 上海集成电路研发中心有限公司 一种红外敏感器件以及红外传感信号放大电路
US11177284B2 (en) 2018-12-20 2021-11-16 Sandisk Technologies Llc Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same
US10700093B1 (en) 2018-12-20 2020-06-30 Sandisk Technologies Llc Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same
WO2020202006A1 (en) * 2019-04-02 2020-10-08 Sabic Global Technologies B.V. Lead-free piezo composites and methods of making thereof
US11631447B2 (en) * 2019-07-25 2023-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Memory circuit and manufacturing method thereof
US11222920B2 (en) 2020-02-04 2022-01-11 Western Digital Technologies, Inc. Magnetic device including multiferroic regions and methods of forming the same
US11107516B1 (en) 2020-02-24 2021-08-31 Sandisk Technologies Llc Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same
EP4128379B1 (de) 2020-04-02 2025-03-05 SABIC Global Technologies B.V. Piezoelektrische polymermischung und verbundzusammensetzung mit lithiumdotiertem kaliumnatriumniobat sowie dessen herstellungsverfahren
KR102417447B1 (ko) * 2020-08-27 2022-07-06 주식회사 아모그린텍 압전형 나노섬유 얀 및 이의 제조방법
US11264562B1 (en) 2020-08-27 2022-03-01 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11276446B1 (en) 2020-08-27 2022-03-15 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
CN112885755A (zh) * 2021-03-11 2021-06-01 铜仁学院 一种铁电薄膜的退火方法及装置
CN113371703A (zh) * 2021-05-21 2021-09-10 西安交通大学 一种石墨烯改良的硅集成储能薄膜及其制备方法
TWI803193B (zh) * 2022-02-15 2023-05-21 國立成功大學 有機無機複合壓電薄膜
US20240114692A1 (en) * 2022-10-01 2024-04-04 Intel Corporation Inverted ferroelectric and antiferrolecetric capacitors

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US20060160251A1 (en) * 2004-12-30 2006-07-20 Thin Film Electronics Asa Method in the fabrication of a memory device
US20090294818A1 (en) * 2008-05-30 2009-12-03 Sony Corporation Ferroelectric polymer
US20100148232A1 (en) * 2008-12-12 2010-06-17 Palo Alto Research Center Incorporated Surface treatment of hydrophobic ferroelectric polymers for printing
US20120313482A1 (en) * 2009-12-23 2012-12-13 Kui Yao Method of forming a vdf oligomer or co-oligomer film on a substrate and an electrical device comprising the vdf oligomer or co-oligomer film on the substrate

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US20100148232A1 (en) * 2008-12-12 2010-06-17 Palo Alto Research Center Incorporated Surface treatment of hydrophobic ferroelectric polymers for printing
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See also references of WO2015191254A1 *

Also Published As

Publication number Publication date
CN106575575B (zh) 2018-12-28
WO2015191254A1 (en) 2015-12-17
KR101872632B1 (ko) 2018-08-02
KR20170003717A (ko) 2017-01-09
US20170114241A1 (en) 2017-04-27
EP3146567B1 (de) 2018-06-20
CN106575575A (zh) 2017-04-19
EP3146567A1 (de) 2017-03-29
US10035922B2 (en) 2018-07-31

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