Classifications

• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
  • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
  • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
  • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
  • F21V13/02—Combinations of only two kinds of elements
  • F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
  • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
  • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
  • G01T1/16—Measuring radiation intensity
  • G01T1/20—Measuring radiation intensity with scintillation detectors
  • G01T1/2002—Optical details, e.g. reflecting or diffusing layers
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
  • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
  • G01T1/16—Measuring radiation intensity
  • G01T1/20—Measuring radiation intensity with scintillation detectors
  • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
  • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
  • G01T1/16—Measuring radiation intensity
  • G01T1/20—Measuring radiation intensity with scintillation detectors
  • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
  • G01T1/2023—Selection of materials
• • G—PHYSICS
  • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
  • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
  • G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens

Definitions

• the invention relates to the field of luminescent materials, in particular of the scintillator type, for the detection of ionizing radiation, and also of the wavelength converter type.
• Ionizing radiation (including ionizing particles such as protons, neutrons, electrons, alpha particles, ions, and X or gamma radiation) is usually detected by means of scintillators, often monocrystalline, which convert incident radiation into light, which is then transformed into an electrical signal using a photoreceptor such as a photomultiplier.
• the scintillators used may in particular be monocrystal of sodium iodide doped with thallium (hereinafter denoted Nal (TI)), of cesium iodide doped with thallium or sodium, of lanthanum halide doped with cerium or praseodymium. .
• the lanthanum halide based crystals have been the subject of recent work such as those published under US7067815, US7067816, US2005 / 188914, US2006 / 104880, US2007 / 241284. These crystals are promising in terms of light intensity and resolution.
• luminescent materials such as YAG (cerium-doped yttrium and aluminum oxide) are used in projection lamps to convert non-visible light, especially in the UV, into visible light and thus increase the amount of light. light projected into the visible. This intensity increase can be used to increase the contrast of an image.
• YAG ceramic-doped yttrium and aluminum oxide
• the light emitted by a scintillator is received by a photodetector which can be of the photomultiplier, photodiode, CCD, etc. type.
• the photodetector is optically coupled to the scintillator by direct contact or through a very thin window that can be a simple thin layer of fat.
• the exit angle of the scintillator light is often less important.
• the angle may be of some importance: 1) for spatial detectors (line or pixel), a perpendicular angle of incidence decreases the "cross-talk" and increases the sharpness of the image, 2) the silicon photodetectors have high indices and decrease a perpendicular incidence decreases the Fresnel reflection and improves the efficiency, 3) for a photomultiplier tube, an incidence perpendicular gives a lower dispersion of the energy of the photoelectrons and therefore a better resolution.
• the light generally comes out of the scintillator in a quasi-lambertian manner, which means that the angular distribution of the light coming out of the exit face of the scintillator is very wide. The light is, however, often satisfactorily recovered by the photodetector.
• Some applications such as high-energy radiography with an electron accelerator, PET-MRI, reactor core imaging, imaging in the human body, however, make use of a more optical coupling. remote between the scintillator light exit face and the photodetector.
• These applications use an optical system to move the photodetector away from the scintillator such as an optical fiber or a lens.
• it is particularly important to reduce the exit angle of light from the scintillator exit face. By reducing this angular distribution, the amount of light detected is increased.
• the photodetector is inherently sensitive to the angle of incidence of the light
• the reduction of the angular distribution of the light leaving the scintillator results in a better homogeneity of the response of the photodetector.
• it is in principle not recommended to use means that reinforce the random nature of the light paths in the crystal, such as in particular the production of light. a roughness on the outer surface of the crystal.
• a textured photonic crystal on the exit surface of a luminescent light-emitting material in order to channel the light emerging from said luminescent material into a narrower corner cone.
• the function of the photonic crystal is to collimate the light so that the coupling with the photodetector is more efficient and homogeneous over the entire exit surface of the scintillator / photonic crystal system.
• the light is better directed towards a target, such as an image.
• the invention relates in the first place to a luminescent material, in particular of the scintillator type, comprising a surface coated with a textured layer, the texture of said layer comprising identical patterns uniformly distributed. on said face, said layer reducing the angle of the extraction cone of the light emitted by said luminescent material and passing through said face.
• the light emerging from the luminescent material is narrower in a smaller cone angle at the top, which improves its collection.
• the texture of the photonic crystal is a periodic structure whose period is close to the wavelength of the light emitted by the scintillator.
• the photonic layer consists of a set of identical studs or holes arranged evenly at the light exit surface of the luminescent material.
• These patterns may be of any shape, but generally have the shape of a cylinder whose axis is perpendicular to the exit surface.
• D the characteristic size corresponding to their largest dimension parallel to the exit surface. This characteristic size is called "D". If the pattern is of square or rectangular section parallel to the exit surface, D corresponds to a diagonal of said square or rectangle. If the pattern is a cylinder whose axis is perpendicular to the exit surface, then D is the diameter of the cylinder.
• the patterns are repeated regularly over the entire surface of the material by successive and possibly combinatorial translation along two vectors v and w in the plane of the exit surface.
• the angle between the vectors is between 0 ° and 90 °.
• a square organization corresponds to vectors v and w of the same length forming an angle of 90 ° with each other while a hexagonal organization corresponds to vectors v and w of the same length forming an angle of 60 ° between them.
• the distance "a" between two neighboring patterns is called the smallest length of the vectors v and w.
• a sc is the maximum emission wavelength (corresponding to the maximum of the emission peak) of the light emerging from a luminescent material
• a sc / a is within the range of 0.5 at 1, 5 and preferably from 0.8 to 1.3, and more preferably from 0.85 to 1.1.
• D / a is in the range of 0.2 to 0.8.
• the thickness H of the layer is in the range of 10 nm to 1000 nm and preferably between 100 and 500 nm.
• the coated phosphor material according to the invention is particularly suitable for optical systems of coupling angle of acceptance ("angle of acceptance" in English) weak, especially less than 45 ° and even less than 20 ° and even less than 10 °.
• the invention also relates to a device comprising a scintillator material according to the invention, coupled to at least one photodetector by the coated surface of the textured layer by an optical coupling system with angles of admission of less than 45 °, and even less than 20 ° and even less than 10 °.
• a sc / a approaches 1. Thanks to the layer according to the invention, a gain in light extraction (measured in watts) greater than 50% and even greater than 100%, and even greater than 150% can be obtained.
• This gain can be measured by measuring the output wattage of an imaging system with a given admission angle constituted for example by a lens of focal length and known diameter. The measurement is then made at the focus of the lens. It may be desired that the exit angle be small because of the low angle of admission of an optical coupling system, especially in the case of a coupling between a scintillator material and a photodetector.
• the textured layer is applied to the light exit surface of the luminescent material, in particular of the scintillator type.
• it may be the light output side of a scintillator to be coupled to a photodetector via an optical system having a given admission angle, for example 20 ° for an optical fiber.
• the manner in which the other surfaces of the luminescent material are treated also influences the amount of light extracted. Surprisingly, especially in the case of a scintillator material, it has been found that the best results are obtained if the other surfaces are roughened and covered with a light reflector. Indeed, the roughness makes the angle and the position of the light at the exit interface of the totally random scintillator. Yet this type of surface treatment has led to the best results.
• the roughness of the surfaces is obtained in a known manner by scraping for example with sandpaper (especially of type P200 to P1000).
• the light reflector is preferably white and can be applied to the rough surface by application of a strip of reflective material such as polytetrafluoroethylene ("PTFE"), especially sold under the trademark Teflon.
• PTFE polytetrafluoroethylene
• Teflon polytetrafluoroethylene
• Teflon polytetrafluoroethylene
• the application of a strip of reflective material on the rough surface of the scintillator traps air between the strip and the scintillator, which is favorable.
• the faces of the material according to the invention not coated by the textured layer are rough and coated with a reflective material, in particular PTFE leaving air between the scintillator and itself.
• the material of the textured layer has a refractive index close to that of the luminescent material, and preferably in the range from 0.8 to 1.2 times and preferably from 0.9 to 1.1 times the index of refraction of the luminescent material.
• This layer is made of a material transparent to the wavelength of the light emerging from the luminescent material.
• the material of the textured layer is first selected for its compatibility with the luminescent material in terms of its refractive index.
• the textured layer may be silicon nitride or titanium oxide.
• the texture can be achieved by lithography, by e-beam etching, by embossing a sol-gel layer.
• a luminescent material of the scintillator type may especially be of the type
• the scintillator-type luminescent material may also be BGO (Bi 4 Ge 3 O 2 ), CDO (CdWO 4 ), PWO (PbWO 4 ) or CsI.
• a scintillator emits at a precise wavelength with a peak of emission more or less wide according to its nature.
• An LYSO usually emits around 420 nm.
• a CLYC (family of Cs2LiYCl6) generally emits around 365 nm.
• the wavelength ⁇ sc referred to above is the wavelength corresponding to the peak of the light emission peak characteristic of the scintillator.
• the scintillator is generally monocrystalline.
• a luminescent material of the wave-converter type may be of the YAG type, that is to say a garnet of the aluminum oxide and yttrium type generally doped with cerium (YAG: Ce).
• YAG Ce
• Ce cerium
• Y2.99 AI 5 Ceo.oi Oi 2 This material converts from UV to visible.
• the luminescent material of the wave converter type can also be
• the light-emitting material of the wave-converter type may be of the YAG or GAG or GYGAG type, in particular of the YAG: Ce or GAG: Ce or GYGAG: Ce type.
• the luminescent material in particular of the scintillator type, may be monocrystalline or poly-crystalline.
• a powder of the material is compressed to form a pellet.
• the luminescent material is used in the form of a thin film, generally between 0.05 and 0.2 mm thick.
• the blade receives incident light from one side, is traversed by this light and emits emerging light from the other side.
• the emergent light is of greater intensity in the visible, since the luminescent material has converted some of the incident non-visible UV light into emerging visible light.
• the invention also relates to a projection lamp comprising a light source and a lamina of the luminescent material according to the invention, said luminescent material being of the wave-converter type, the light source emitting light towards a first face of the blade, the second face of the blade being coated with the textured layer.
• the luminescent material advantageously converts non-visible incident light (towards the first face) into visible emerging light (of the second face). The light emitted by the luminescent material passes through the textured layer and then emerges from the textured layer, said textured layer reducing the angle of the extraction cone of the emitted light compared to the same device without a textured layer.
• a scintillator-type luminescent material coated with the photonic layer according to the invention is of particular interest for detection devices requiring an optical system involving a large distance between the scintillator and the photodetector.
• the invention particularly relates to a device comprising a scintillator material according to the invention coupled to a photodetector by the coated surface of the textured layer, said detector being removed from the material by a distance of at least 5 cm, or at least 1 m.
• this type may be made of the following two uses of this type: a) Imaging, in particular medical imaging, using areas of scintillator material pixel matrices, with a camera directed on said area.
• the camera can be a CCD camera or a motion picture camera or a high speed digital movie camera. This can be used for radiography in the case where the photodetector must be far from the radiation source or electromagnetic noise. High energy radiography using electron accelerators is a concrete example.
• optical fibers are coupled to scintillator pixels in order to place the photodetector at a sufficient distance from the radiation source or to reduce the size of the instrument near the pixels.
• a narrow light emission cone means that more light is in the critical angle for total internal reflection. Specific examples using this technique are imaging in high magnetic fields such as fields
• MRI Magnetic resonance Imaging
• MRI-PET magnetic resonance imaging
• imaging in reactor cores imaging in the human or animal body (eg colon imaging).
• the material according to the invention is coupled to a plurality of photo-detectors by the coated side of the textured layer.
• the invention provides an advantage not only because of the large distance between the material and the photodetector, but also because of the plurality of photodetectors in view of the need to separate the radiation intended for each photodetector.
• the invention is also of interest for certain devices for which the photodetector is very close to the scintillator, which is a more traditional configuration.
• the following four uses can be mentioned:
• Linear pixel arrays are used in computed tomography imaging. Crosstalk can occur between photodiodes when light from a neighboring pixel enters a photodiode. This causes a blur in the reconstruction of the image.
• the invention makes it possible to reduce this crosstalk by pass the light more directly into the nearest photodiode.
• silicon photodetectors are not 100% effective for photon detection.
• silicon has a high refractive index and is too reflective. Photons that are closer to silicon perpendicular to it are less subject to Fresnel reflection. Thus, scintillation light that is more concentrated in the narrow cone perpendicular to the silicon surface will have a greater chance of being transmitted. Thus, silicon photodetectors will have a stronger signal.
• the multi-anode photomultiplier tubes (PMT) benefit, thanks to the invention, from a greater percentage of photons close to the perpendicular. These photons diffuse less in the glass window and the crosstalk is reduced and the spatial resolution is increased. These multi-anode PMTs are used in medical imaging such as PET and SPECT.
• the material is coupled to a plurality of photodetectors by the coated side of the textured layer.
• the power response of the photodetector to incident radiation varies by more than 10% when the angle of incidence from the normal to the receiving surface
• the photodetector varies from 0 to 80 °.
• FIG. 1 represents a scintillator material 1 whose outlet face is coated with the layer 2 according to the invention.
• the other faces of the scintillator are rough and coated with a material 3 reflecting light.
• the textured exit face of the light is in contact with an optical coupler 4.
• the other face of the optical coupler transmits the light to a photodetector 5.
• FIG. 2 represents a projection lamp using as a light source a diode 20. This emits light in the volume 21, generally under vacuum. The lateral internal walls 22 reflect the light. A blade 23 of YAG receives the light by a first face directed towards the inside of the volume 21. The second face of the outwardly directed blade 23 is provided with a textured layer 24 which channels the light into a cone of reduced angle. Depending on the luminescent material used, non-visible light emitted by the light source may be converted during the passage of the blade in visible light.
• the angle alpha represents the angle within which light from the scintillator is collimated.
• FIG. 4 represents a part of the face of a scintillator 40 coated with a textured layer 41 according to the invention comprising a plurality of identical cylindrical studs juxtaposed regularly on the surface of the scintillator.
• the angle alpha represents the angle within which light from the scintillator is collimated.
• Si3N 4 a layer of Si3N 4
• results are expressed relative to the same crystal without a textured layer which gives a horizontal line passing through the value 1 on the ordinate. We see that the best results are obtained for values of "a" closest to 420 nm. The results are better when the angle (in degree) of the extraction cone is smaller and are even exceptional below 20 °.
• the crystal was cylindrical with a diameter of 63.2 mm and a height of 76.2 mm.

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• Physics & Mathematics (AREA)
• Spectroscopy & Molecular Physics (AREA)
• Engineering & Computer Science (AREA)
• High Energy & Nuclear Physics (AREA)
• General Engineering & Computer Science (AREA)
• Life Sciences & Earth Sciences (AREA)
• General Physics & Mathematics (AREA)
• Molecular Biology (AREA)
• Health & Medical Sciences (AREA)
• Chemical & Material Sciences (AREA)
• Crystallography & Structural Chemistry (AREA)
• Materials Engineering (AREA)
• Organic Chemistry (AREA)
• Measurement Of Radiation (AREA)
• Luminescent Compositions (AREA)
• Conversion Of X-Rays Into Visible Images (AREA)
• Optical Filters (AREA)

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• 2014
  • 2014-06-23 FR FR1455809A patent/FR3022555B1/fr not_active Expired - Fee Related
• 2015
  • 2015-06-17 CN CN201580034003.XA patent/CN106459743A/zh active Pending
  • 2015-06-17 EP EP15738722.6A patent/EP3158564A1/de not_active Withdrawn
  • 2015-06-17 JP JP2016574891A patent/JP2017529408A/ja active Pending
  • 2015-06-17 WO PCT/FR2015/051605 patent/WO2015197947A1/fr not_active Ceased
• 2016
  • 2016-12-16 US US15/382,400 patent/US20170153008A1/en not_active Abandoned

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