EP3166140A4 - Unité de substrat pour modules de puissance, et module de puissance - Google Patents

Unité de substrat pour modules de puissance, et module de puissance Download PDF

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Publication number
EP3166140A4
EP3166140A4 EP15814706.6A EP15814706A EP3166140A4 EP 3166140 A4 EP3166140 A4 EP 3166140A4 EP 15814706 A EP15814706 A EP 15814706A EP 3166140 A4 EP3166140 A4 EP 3166140A4
Authority
EP
European Patent Office
Prior art keywords
power
substrate unit
modules
power module
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP15814706.6A
Other languages
German (de)
English (en)
Other versions
EP3166140A1 (fr
EP3166140B1 (fr
Inventor
Sotaro Oi
Tomoya OOHIRAKI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority claimed from PCT/JP2015/068884 external-priority patent/WO2016002803A1/fr
Publication of EP3166140A1 publication Critical patent/EP3166140A1/fr
Publication of EP3166140A4 publication Critical patent/EP3166140A4/fr
Application granted granted Critical
Publication of EP3166140B1 publication Critical patent/EP3166140B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/121—Metallic interlayers based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/66—Forming laminates or joined articles showing high dimensional accuracy, e.g. indicated by the warpage
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
EP15814706.6A 2014-07-04 2015-06-30 Unité de substrat pour modules de puissance, et module de puissance Active EP3166140B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014138716 2014-07-04
PCT/JP2015/068884 WO2016002803A1 (fr) 2014-07-04 2015-06-30 Unité de substrat pour modules de puissance, et module de puissance

Publications (3)

Publication Number Publication Date
EP3166140A1 EP3166140A1 (fr) 2017-05-10
EP3166140A4 true EP3166140A4 (fr) 2018-03-07
EP3166140B1 EP3166140B1 (fr) 2020-06-03

Family

ID=58091927

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15814706.6A Active EP3166140B1 (fr) 2014-07-04 2015-06-30 Unité de substrat pour modules de puissance, et module de puissance

Country Status (2)

Country Link
EP (1) EP3166140B1 (fr)
CN (1) CN106463477B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6717238B2 (ja) 2017-03-07 2020-07-01 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板
JP6776953B2 (ja) 2017-03-07 2020-10-28 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板
JP6939596B2 (ja) * 2018-01-24 2021-09-22 三菱マテリアル株式会社 パワーモジュール用基板の製造方法及びセラミックス‐銅接合体
JP6601512B2 (ja) * 2018-01-24 2019-11-06 三菱マテリアル株式会社 ヒートシンク付きパワーモジュール用基板及びパワーモジュール
JP6614256B2 (ja) * 2018-03-02 2019-12-04 三菱マテリアル株式会社 絶縁回路基板
CN111819682B (zh) * 2018-03-26 2025-04-29 三菱综合材料株式会社 绝缘电路基板用接合体的制造方法及绝缘电路基板用接合体
DE112018007723T5 (de) * 2018-06-12 2021-02-25 Mitsubishi Electric Corporation Leistungshalbleitermodul und leistungswandlervorrichtung
JP7143659B2 (ja) * 2018-07-18 2022-09-29 三菱マテリアル株式会社 金属ベース基板
JP7147610B2 (ja) * 2019-02-12 2022-10-05 三菱マテリアル株式会社 絶縁回路基板及びその製造方法
EP3852138B1 (fr) 2020-01-20 2023-11-08 Infineon Technologies Austria AG Module électronique comprenant un boîtier à semi-conducteur connecté à un dissipateur thermique fluide
JP7363613B2 (ja) * 2020-03-13 2023-10-18 三菱マテリアル株式会社 ヒートシンク一体型絶縁回路基板
CN113838821A (zh) * 2020-06-24 2021-12-24 深圳第三代半导体研究院 一种用于SiC平面封装结构的散热件及其制备方法
CN116230666B (zh) * 2023-05-05 2023-08-08 烟台台芯电子科技有限公司 一种dbc双面微通道制冷igbt模块及其制造方法
CN117790462B (zh) * 2023-12-21 2025-04-15 苏州悉智科技有限公司 一种提高陶瓷基板利用率的叠层陶瓷基板结构及功率模块
CN119153341B (zh) * 2024-09-14 2025-03-04 江苏富乐华半导体科技股份有限公司 一种提高直接键合铝铜陶瓷基板耐热循环可靠性的方法
CN120878659A (zh) * 2025-08-28 2025-10-31 广州众山新材料股份有限公司 散热基板及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09234826A (ja) * 1995-12-28 1997-09-09 Dowa Mining Co Ltd 金属−セラミックス複合基板及びその製造法
JPH11214612A (ja) * 1998-01-26 1999-08-06 Hitachi Ltd パワー半導体モジュール
JP2003078086A (ja) * 2001-09-04 2003-03-14 Kubota Corp 半導体素子モジュール基板の積層構造
JP2005322784A (ja) * 2004-05-10 2005-11-17 Mitsubishi Electric Corp 電力用半導体装置
EP1667508A1 (fr) * 2003-09-25 2006-06-07 Kabushiki Kaisha Toshiba Carte imprimee en ceramique, procede d'elaboration, et module d'alimentation
JP2013229564A (ja) * 2012-03-30 2013-11-07 Mitsubishi Materials Corp パワーモジュール用基板の製造方法
JP2014039062A (ja) * 2012-03-30 2014-02-27 Mitsubishi Materials Corp パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100705868B1 (ko) * 2003-05-06 2007-04-10 후지 덴키 디바이스 테크놀로지 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2008147308A (ja) * 2006-12-07 2008-06-26 Hitachi Metals Ltd 回路基板およびこれを用いた半導体モジュール
CN101971329B (zh) * 2008-03-17 2012-11-21 三菱综合材料株式会社 带散热片的功率模块用基板及其制造方法、以及带散热片的功率模块、功率模块用基板

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09234826A (ja) * 1995-12-28 1997-09-09 Dowa Mining Co Ltd 金属−セラミックス複合基板及びその製造法
JPH11214612A (ja) * 1998-01-26 1999-08-06 Hitachi Ltd パワー半導体モジュール
JP2003078086A (ja) * 2001-09-04 2003-03-14 Kubota Corp 半導体素子モジュール基板の積層構造
EP1667508A1 (fr) * 2003-09-25 2006-06-07 Kabushiki Kaisha Toshiba Carte imprimee en ceramique, procede d'elaboration, et module d'alimentation
JP2005322784A (ja) * 2004-05-10 2005-11-17 Mitsubishi Electric Corp 電力用半導体装置
JP2013229564A (ja) * 2012-03-30 2013-11-07 Mitsubishi Materials Corp パワーモジュール用基板の製造方法
JP2014039062A (ja) * 2012-03-30 2014-02-27 Mitsubishi Materials Corp パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016002803A1 *

Also Published As

Publication number Publication date
CN106463477B (zh) 2019-03-12
EP3166140A1 (fr) 2017-05-10
CN106463477A (zh) 2017-02-22
EP3166140B1 (fr) 2020-06-03

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