EP3177580A1 - Verfahren zum herstellen von doppelseitig metallisierten keramik-substraten - Google Patents
Verfahren zum herstellen von doppelseitig metallisierten keramik-substratenInfo
- Publication number
- EP3177580A1 EP3177580A1 EP15749996.3A EP15749996A EP3177580A1 EP 3177580 A1 EP3177580 A1 EP 3177580A1 EP 15749996 A EP15749996 A EP 15749996A EP 3177580 A1 EP3177580 A1 EP 3177580A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- carrier
- ceramic substrate
- arrangement
- double
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/365—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/54—Oxidising the surface before joining
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/692—Ceramics or glasses
Definitions
- the bonding of ceramic substrate and metal foil is generally carried out in so-called bonding ovens.
- Corresponding bonding furnaces often also referred to as tunnel furnaces, include, inter alia, an elongated tunnel-like furnace.
- raum also called muffle
- a transport device with a transport element for example in the form of a flexible and hflzebehavinglgen conveyor belt for transporting the material to be treated by the heated with a heater furnace chamber.
- the ceramic substrates are positioned together with the metal foil on a carrier on the conveyor belt and then passed through in the bonding oven by the conveyor belt driven a heating area, in which the required bonding temperature is reached.
- the resulting composite of ceramic substrate and metal roll is cooled down again.
- the ceramic is bonded in two furnace passes to the metal layers on the opposite selvages of the ceramic substrate.
- a ceramic substrate is first positioned on a support and then placed on the overhead, i. The side facing away from the carrier covered with a metal foil. By the action of heat, the side of the ceramic substrate is connected to the metal layer and then the resulting arrangement is cooled. Subsequently, the substrate is turned over and in a second Bondschrttt the other side of the substrate is provided on the same catfish with a metal layer. Therefore, all metallized ceramic substrates produced in a two-step bonding process pass through the tunnel furnace twice.
- DE 10 2004 056 879 A relates to a method for producing double-sidedly metallized ceramic substrates using the direct bonding process, in which an arrangement of at least two metal layers and a ceramic substrate arranged between the metal layers on a is positioned with a release layer provided carrier and then the arrangement is heated to a temperature at which there is a bonding of the two metal layers with the ceramic substrate.
- the reason for the varying nonspecific residual bending is, for example, due to raw material influences that are noticeable.
- the deflection of the resolling double-sided metallized ceramic substrates therefore fluctuates considerably even when the method described in DE 10 2004 056 879 A is used both in the longitudinal / transverse direction and in the height, and is furthermore unoriented.
- the object is achieved by a method for producing a double-sided metallized ceramic substrate, which is characterized by the following method steps:
- the method according to the invention is then characterized in that the carrier is tilted and / or curved in the process section (1) before the positioning of the arrangement and / or the carrier is in process step (1) after the positioning of the arrangement on the carrier and / or during the process
- Aidsschrttt (2) is inclined. It may also be a pivoting movement up to a zero slope or a tendency to a negative angle is here in question,
- Ceramic Substrates in the context of the present invention are the preferably planar or plate-shaped elements consisting of a ceramic material, which are or are provided with metallization on two of their surface sorts
- the ceramic substrates used do not involve angular ceramic bodies, as are used in particular in DE 10 2008 001 224.
- the planar or plate-shaped ceramic substrates which only have a maximum of 1% on an edge length of the ceramic substrates, based on an ideal pkanare level (For example, with a substrate length of 200 mm, the deviation would be a maximum of 2 mm.)
- the ceramic substrates have at best a slight curvature (and in no case an angular curvature).
- the ceramic substrate is additionally characterized in that the flatness of the ceramic substrate is less than 1%, based on the edge length of the ceramic substrate.
- the carrier is inventively provided that dleser also has only a slight curvature.
- the carrier has a bulge of not more than 5%, preferably not more than 3%, preferably not more than 1%, in each case based on the edge length of the carrier and based on an ideal planar plane.
- the carrier is therefore additionally identified by net, that the flatness of the carrier is less than 5%, preferably less than 3%. preferably less than 1%, in each case based on the length of the carrier.
- a flatness of the ceramic substrate or carrier is understood to mean a shape tolerance of the ceramic substrate or of the carrier in which the flat surface of the ceramic substrate or carrier must be located.
- the tolerance limits result from two imaginary surfaces, parallel to the ideal planar surface of the ceramic substrate or support, in which case, in which case the real surface of the ceramic substrate or support is produced by the one of the parallel surfaces pierces the tolerance is exceeded.
- an arrangement is understood to mean a composite of two metal layers between which a ceramic substrate is provided, wherein the arrangement may be before, during or after the bonding.
- substantially in the sense of the invention means deviations from the respective exact value by +/- 10%, preferably by +/- 5% and / or deviations in the form of changes insignificant for the function.
- the method according to the invention provides that the arrangement comprising the at least two metal plates and the ceramic substrate arranged therebetween is inclined before or during actual bonding in process step (2).
- This inclination of the arrangement can be achieved by positioning the support on which the arrangement of the two metal layers and the ceramic substrate arranged therebetween is either mechanically inclined after the positioning of the arrangement or to the point in time at which the arrangement is already tilted from the two metal plates and the interposed ceramic substrate is positioned on the carrier. Should it be provided that the carrier is tilted after positioning the arrangement, so can Tending the carrier both in process step (1), ie before heating the arrangement, or Inmaschinesschrttt (2), ie during the heating of the arrangement occur.
- the inventive method provides in a further second embodiment that the carrier has a curvature.
- the arrangement positioned on the carrier, comprising the at least two metal layers and the ceramic substrate arranged therebetween, will approach the curvature of the carrier in the subsequent bonding process in method step (2) under the effect of corresponding bonding temperatures
- curved double-sided metallized ceramic substrates are formed, but in their entirety they have a defined and constant curvature. It is thus possible by the method according to the invention to produce reproducibly double-sidedly metallized ceramic substrates in series, the deflection of which is determined both in the z direction (height) and in the x and y direction (longitudinal and transverse direction). is clearly defined.
- the present invention relates in particular to a method according to the invention, which in series production has a multiplicity of double-sidedly metallized ceramic substrates with substantially constant properties of layer orientation and overall curvature.
- the carrier used in the method according to the invention will first be discussed.
- the carrier can be greatly tilted after placing the metal foil and the substrate, so that there is a positioning of the individual components of the arrangement. So that the spatial height of the carrier for the passage in the bonding oven is not too large, the carrier can then be approximated to a horizontal position with the then positioned components of the arrangement.
- Corresponding carriers are also generally referred to in the field of direct metali bonding as bond boats, bond ships or the like.
- the support used in the process according to the invention is preferably made a material with a high hardness, which is inert and / or not wettable at the temperatures of the bonding process used.
- Malerlallen for the support according to the invention are in particular materials selected from the group consisting of graphite, Mulllt, Slecrttt, Cordlerit, Zr0 2 , Al 2 0 3 , AIN, BN, ZrN, SijN * SIC and mixtures thereof, in question.
- the carrier has a slope or is formed so that it can be inclined. Due to the tendency to tilt, after the positioning of the adjacent metal layer, the subsequent ceramic substrate layer and the closing metal layer, the individual layers are positioned relative to one another.
- a substantially rectangular carrier is provided with at least one stop on at least one of the respective edges lying below by the inclination with a boundary. If the arrangement comprising the at least two metal layers and the ceramic substrate arranged therebetween is now positioned on the carrier, the individual layers of the arrangement can slip following the inclination of the carrier and thus abut the boundary of the carrier. As a result, a clearly defined positioning of the three layers is achieved so that they also have a clearly defined positioning relative to one another.
- FIG. 2 shows a possible rectangular geometry of the carrier, with rotations about the edge 5 (see FIG. 2a) or about the edges 8 and 9 (see FIG.
- the essentially rectangular plane of the carrier is tilted only over one edge 5, so that a total of two corners of the rectangular carrier 6 and 7 result, which after the inclination lie on a substantially identical lower level are located.
- the substantially rectangular plane of the carrier is tilted about two edges 8 and 9, so that in total only one corner of the rectangular carrier 10 is at the lowest level.
- the embodiment shown in FIG. 2b is preferred since, because of the two-sided positioning, it permits a more precise positioning of the individual components of the arrangement relative to one another.
- the invention preferably dle the term .Niveau "lateral plane were comparable.
- substantially rectangular plane of the medium can at least partially located.
- the .Ausgangsitate * to which all other arrival gave are relatively related, the Level in which the substantially rectangular plane of the carrier first extends (process step (1) positioning of the carrier)
- All other terms of the "level” are to be understood relative to their starting level.
- a lower level 1 * is understood to mean a lateral plane which is displaced in a vertical direction parallel to the plane of the initial level.
- the lower level is thus lowered vertically relative to the starting level.
- a .tiefsten level * dle lateral plane which is displaced parallel to the plane of the output levels in the vertical direction and thereby comprises dle highest relative displacement in which is still at a corner of the carrier.
- the lowest level is thus also lowered relative to the initial level.
- the lowest level always has a greater vertical displacement relative to the starting level than the lower level (according to the invention, the cases in which there is only a relative vertical shift is referred to as a case of a lower level; is the deeper oil level at the lowest level).
- the carrier inclined from them about the axes of rotation 8 and 9 then has an inclination which is described by the angles ⁇ , ⁇ and ⁇ shown in FIG.
- an angle ⁇ which is generally 0.5 to 45 °, preferably 0.5 to 40 °, welter preferably 0.5 to 35 °, more preferably 1 to 30 ° welter preferably 1 and 25 °.
- the resulting angle ⁇ must be large enough that an alignment by slipping of the metal layers and the ceramic substrate is possible, but again should not be too large, otherwise the overall height of the carrier used is too large and again the height of the used tunnel kiln would have to be increased.
- the carrier Due to the present inclination of the carrier, after the positioning of the first metal layer, the ceramic substrate and the second metal layer on the carrier, alignment takes place with slippage of the individual metal layers or of the ceramic substrate on the alignment of Metallschlraum and ceramic substrate to each other defined arrangement is achieved.
- the individual layers or the substrate slip following the inclination of the carrier until they hit a boundary.
- the boundary on the support to which the metal braids and the ceramic substrate of the assembly are positioned due to the inclination of the carrier may be made bulky as long as it is capable of arranging the assembly of the metal sheets and the interposed therebetween Ceramic substrate in case of inclination of the carrier or already inclined carrier to fix.
- the delimitation is designed in such a way that, in the sense of a projection or abutment on the supporting element of the arrangement to be positioned, it is provided peripherally on the carrier and protrudes beyond the carrier.
- a boundary at the downwardly sloping edge is sufficient to fix the assembly of the two metal plates and the ceramic substrate.
- the boundary can be formed from a projection or stop protruding beyond the carrier in the direction of the arrangement, either in one piece and thus is consistently formed, or aiser is interrupted and thus from several individualized, ie at least two individual projections or attacks looks.
- the carrier has a curvature.
- the resulting arrangement is adapted to the curved shape of the support.
- the resulting arrangement therefore also has a curvature predetermined by the carrier after method step (2).
- the curvature produced by the curvature may be possible both in one direction and in both directions of the plane spanned by the support.
- the carrier has a curvature corresponding to a deviation from an ideal, absolutely flat plate of 0.2% or more of the carrier length and / or 0, 1% or more of the carrier bar.
- the dimension of the support can be granted in a wide range and depends on the orders of magnitude of the double-sidedly metallised ceramic substrates to be produced and the bonding furnaces used. Suitable dimensions of the carrier are between 20 ⁇ 20 mm 2 and 300 ⁇ 350 mm 2 , wherein the shape of the carrier is preferably either substantially square or substantially rectangular.
- the bonding furnace which is generally a tunnel kiln or continuous furnace
- carriers which are designed for the simultaneous bonding of several arrangements. With such a combination of a plurality of mounting areas, the size described above increases according to the number of arrangements.
- These carriers then have a plurality of support plates arranged one above the other and / or next to one another, on each of which an arrangement to be bonded is positioned.
- the arrangement which rests on the support is generally passed through the furnace at a constant transport speed and thus brought to a temperature at which bonding of metal foil and ceramic substrate takes place, and subsequently cooled again by passing through the heating zones of the furnace.
- the lowest point of the carrier used in accordance with the invention can be in the transport direction both at the front and at the rear.
- Engobe / Cleavers During the double-sided bonding process, the metal layer located between the substrate and the ceramic substrate melts opecifically. If, at that time, it comes into contact with other surfaces, such as the support, there is a possibility that defects in the generated metal coating on the ceramic substrate will occur. In order to avoid such defects on the metal surface, which is assigned to the carrier, it is known from the prior art, so-called release agents on the
- a tilted and / or tiltable and / or curved support is used, which is provided on the surface side oriented towards the metal layer of the double-sided metallized ceramic substrate with a release layer such that during bonding a connection of the metal layer adjoining the separating layer with the carrier does not occur.
- a release layer such that during bonding a connection of the metal layer adjoining the separating layer with the carrier does not occur.
- the separating layer optionally provided on the carrier may comprise a material which is selected from the group consisting of oxidic, nitridic or carbidic ceramics and salts,
- the separation layer comprises a material which is selected from the group consisting of Mulllt, Steaflt, Cordlertt, Al 2 O 3 , ZrO 2 , MgO, Al 2 HO e , SnO 2 , Yttrlumoxld, BaSO 4 , MgSO 4 and mixture of the aforementioned materials.
- the release layer has a porosity, i. a ratio of the pore volume to the volume of solids of greater than 10%, which is preferably greater than 15%, which is preferably greater than 20%.
- the particle size of the separating layer is generally less than 50 .mu.m, preferably less than 40 .mu.m, more preferably less than 35 .mu.m, preferably less than 30 .mu.m.
- the release layer which may optionally be provided according to the invention, may for example also be provided with a colored additive.
- a colored additive has the advantage that it is visually easy to see whether the separation flaw has a defect and is therefore to be replaced if necessary.
- the colored additive may, for example, be chromium oxide.
- the separation layer may be composed of at least two separate sub-separating layers, wherein the separate sub-separating layers are applied to the carrier in succession.
- the separate subdividing layers have essentially the same or a different composition.
- the lower separating layer which is in direct contact with the carrier, has the colored additive, for example chromium oxide.
- the sub-separating layer has a layer thickness of generally 50 to 1000 ⁇ m, preferably 75 to 800 ⁇ m, more preferably 100 to 600 ⁇ m, more preferably 125 to 400 ⁇ m, further preferably 150 to 350 ⁇ m.
- particles of the release layer still adhere to the metal layer, then they can be removed by a suitable method, preferably with an alloy mechanical processes (eg brushing) or with a chemical process (eg, etching a thin surface layer).
- a suitable method preferably with an alloy mechanical processes (eg brushing) or with a chemical process (eg, etching a thin surface layer).
- the inventive method is suitable for the manufacture of double-sided metallized ceramic substrates, which are also the subject of the present invention.
- the arrangements according to the invention can have, in addition to the two metal layers and the ceramic substrate, further layers, such as a solder layer.
- the ceramic substrate may, for example, be substrates of aluminum oxide, aluminum nitride, silicon nitride or silicon carbide.
- an aluminum oxide ceramic (Al 2 O 3) with a proportion of zirconium is suitable oxide (ZrO 2) in the order of about 2-30%, or an aluminum nitride ceramics ", for example, yttrium oxide as an additive, or a silicon nitride ceramic, wherein the aluminum nitride ceramic and / or the silicon nitride ceramic, for example, an oxidic surface layer, for example, a surface layer of Alumlnlumoxld may have.
- the thickness of the ceramic layer is preferably in the range between 0.2 and 1, 5 mm.
- the metal layers on the ceramic substrate can be formed starting from metal sheets or metal foils, before the bonding step has a thickness of generally 100 to 1000 .mu.m, preferably 125 to 750 .mu.m, more preferably 150 to 700 .mu.m, more preferably 1 75 to 600 ⁇ m.
- the metal foils or sheets Prior to the process according to the invention, can be oxidized in a known manner on both sides.
- the process according to the invention is suitable for the production of metal-ceramic substrates (MCS) and substrates which are produced by means of direct-copper-bonding (DGB), direct aluminum-bonding (DAB) or active-metal bonding (AMB).
- MCS metal-ceramic substrates
- DGB direct-copper-bonding
- DAB direct aluminum-bonding
- AMB active-metal bonding
- Carrier Another object of the present invention is a carrier for producing a double-sided metallized ceramic substrate, which is used in the method described above. With regard to the specific embodiments of the carrier according to the invention, reference is therefore made to the above statements.
- the support according to the invention is used in a tunnel kiln or continuous furnace for the production of double-sided metallized ceramic substrates
- the tunnel kiln or continuous furnace for a heat treatment of treated material with at least one tunnel-like furnace space and with at least one heating device for heating the at least one furnace chamber is provided and has a transport unit which transports the carrier according to the invention through the furnace chamber.
- the carrier may comprise at least two parts, wherein the carrier comprises a support surface for receiving the metal layers and the ceramic substrate and a tool carrier.
- the support surface is connected to the conveyor via a conveyor unit, which allows the conveyor to be transported through the tunnel kiln.
- the bearing surface of the carrier should consist of a material which is reaction-inert or at least relatively inert in relation to the bonding process and which preferably has a non-wettable material.
- the bearing surface of the carrier can be made, for example, of a heat-resistant or high-temperature-resistant material, preferably a ceramic material.
- a heat-resistant or high-temperature-resistant material preferably a ceramic material.
- high-temperature-resistant metals are suitable for the bearing surface, in particular alloyed steel, preferably Inconel, or an alloy comprising a constituent selected from the group consisting of molybdenum, titanium, chromium, nickel, tungsten or mixtures thereof. It is preferred for weathering if the support surface is can be used again.
- Embodiments of carriers according to the invention are also encompassed by the present invention, which are designed for a plurality of substrates, for example for two, three, four, five or six arrangements.
- An exemplary embodiment of such a carrier is shown in FIG. 7, wherein different arrangement possibilities of individual carriers are shown in the oven in FIG.
- Figure 1 shows two conventional trained as a bond boats carrier of the prior
- the substrates 1, which have already been bonded on one side, are fixed on carriers 2, 3 in such a way that there is no direct contact of the already bonded copper or ceramic surface with other surfaces, for example the conveyor belt, in the second bond line , This takes place, for example, by the use of carriers in which the unilaterally bonded substrates 1 rest on a carrier only at the edges 2 (cf., FIG. 1a) or are carried over narrow supports 3 on the short sides of the substrates 1 (FIG. see Figure 1 b).
- FIG. 2a is inclined over an edge 5 is. so that the corner points 6 and 7 of the carrier are located in a plane located below the zero plane of the carrier.
- FIG. 2b the carrier is inclined overall by two edges 8 and 9, so that the corner points 10 and 11 of the carrier are located below the zero plane of the carrier.
- the illustrated arrows 12 ⁇ 12 ", 12 TM and 12" "indicate the inclination of the wearer.
- a zero plane is understood to mean that plane which is stretched by the carrier in an unequal and / or curved form.
- FIG. 3 shows an inclined support 4 in which the inclination of the support is given by the illustrated angles ⁇ , ⁇ and ⁇ .
- an angle ⁇ results, which represents a measure of the deviation of the inclined carrier from the zero plane.
- the angle ⁇ in the context of the present invention may be 0.5 to 40 °, preferably 0.5 to 35 °, more preferably 0.5 to 30 °, more preferably 1 to 25 °, more preferably 1 and 5%.
- FIG. 4 shows an embodiment of a carrier 4 which is used in the context of the method according to the invention.
- the carrier 4 has a bearing surface 13 on which the arrangement comprising at least two metal layers and a ceramic substrate arranged therebetween is positioned.
- the support 4 and the supporting surface 13 have an inclination, whereby, after the arrangement has been laid, the arrangement 14 slips or reliably positions itself in the direction of the limitations 14 provided on the support at the periphery.
- the carrier 1 is inclined to point 4, the carrier being inclined about the axes parallel to the edges a and b.
- the inclinations achieved in each case correspond to the angles ⁇ and ⁇ , which results in an angle ⁇ forming on the horizontal line.
- the angle ⁇ in the context of the present invention is preferably 0.5 to 45 °,
- Figure 5 shows an embodiment of a carrier 4 which is inclined, wherein the inclination of the carrier 4 is achieved by height-adjustable feet 15 ⁇ 15 "and 15 m located at the corners of the substantially rectangular support 1.
- Figure 6 shows an inclined and curved support 4, the three boundaries
- FIG. 7 shows an embodiment of a carrier 4 according to the invention with two Mounting areas 15 and 16, while dle
- FIG. 8 shows a multiplicity of possible arrangements of the carrier in the tunnel.
- this shows the dependence of the deflection on the radius of curvature on a curvature of the carrier which follows a circular or elliptical shape.
- the radius of curvature R results from the deflection d of the carrier at a length or board a of the carrier as follows:
- the deflection d is at least 0.5 mm (0.3 mm).
- the inventive method makes it possible to connect at least one ceramic substrate on the top and bottom in only one process run, each with a metal layer. In this case, a high positional accuracy of the layers is achieved and achieved a reproducible defined curvature of the resulting arrangement.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
- Laminated Bodies (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014215377.8A DE102014215377B4 (de) | 2014-08-05 | 2014-08-05 | Verfahren zum Herstellen von doppelseitig metallisierten Keramik-Substraten |
| PCT/EP2015/066959 WO2016020207A1 (de) | 2014-08-05 | 2015-07-24 | Verfahren zum herstellen von doppelseitig metallisierten keramik-substraten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP3177580A1 true EP3177580A1 (de) | 2017-06-14 |
Family
ID=53836049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP15749996.3A Withdrawn EP3177580A1 (de) | 2014-08-05 | 2015-07-24 | Verfahren zum herstellen von doppelseitig metallisierten keramik-substraten |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP3177580A1 (de) |
| DE (1) | DE102014215377B4 (de) |
| TW (1) | TWI597257B (de) |
| WO (1) | WO2016020207A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014224588B4 (de) | 2014-12-02 | 2019-08-01 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum Herstellen eines plattenförmigen metallisierten Keramik-Substrats, Träger zum Herstellen des Substrats und Verwendung des Trägers |
| EP4362615B1 (de) | 2015-12-22 | 2025-07-30 | Heraeus Electronics GmbH & Co. KG | Herstellungsverfahren eines metall-keramik-substrates mit verbesserter flächen-nutzung |
| EP3263537B1 (de) | 2016-06-27 | 2021-09-22 | Infineon Technologies AG | Verfahren zur herstellung eines metall-keramik-substrats |
| DE102018101750A1 (de) * | 2018-01-26 | 2019-08-01 | Rogers Germany Gmbh | Verbundkeramik für eine Leiterplatte und Verfahren zu deren Herstellung |
| CN110257793B (zh) * | 2019-07-04 | 2025-03-28 | 深圳市捷佳伟创新能源装备股份有限公司 | 倾斜运输托盘的镀膜设备 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0872882A2 (de) * | 1997-04-15 | 1998-10-21 | Curamik Electronics GmbH | Verfahren zum Herstellen eines gewölbten Metall-Keramik-Substrates |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3744120A (en) | 1972-04-20 | 1973-07-10 | Gen Electric | Direct bonding of metals with a metal-gas eutectic |
| US3766634A (en) | 1972-04-20 | 1973-10-23 | Gen Electric | Method of direct bonding metals to non-metallic substrates |
| US3994430A (en) | 1975-07-30 | 1976-11-30 | General Electric Company | Direct bonding of metals to ceramics and metals |
| DE3204167A1 (de) | 1982-02-06 | 1983-08-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum direkten verbinden von metallstuecken mit oxidkeramiksubstraten |
| JPH1179857A (ja) * | 1997-09-02 | 1999-03-23 | Fuji Electric Co Ltd | 金属とセラミックスとの接合方法 |
| DE102004056879B4 (de) | 2004-10-27 | 2008-12-04 | Curamik Electronics Gmbh | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
| CN101687716B (zh) * | 2007-04-24 | 2013-11-13 | 陶瓷技术有限责任公司 | 制造敷金属构件的方法、相关构件以及在敷金属过程中用于放置构件的支架 |
| JP5664949B2 (ja) * | 2008-10-07 | 2015-02-04 | ロジャース ジャーマニー ゲーエムベーハー | 金属−セラミック基板または銅−セラミック基板の製造方法および該方法で使用するための支持体 |
| DE102010023637B4 (de) | 2010-06-14 | 2012-01-12 | Ixys Semiconductor Gmbh | Verfahren zum Herstellen von doppelseitig metallisierten Metall-Keramik-Substraten |
-
2014
- 2014-08-05 DE DE102014215377.8A patent/DE102014215377B4/de active Active
-
2015
- 2015-07-24 EP EP15749996.3A patent/EP3177580A1/de not_active Withdrawn
- 2015-07-24 WO PCT/EP2015/066959 patent/WO2016020207A1/de not_active Ceased
- 2015-07-29 TW TW104124521A patent/TWI597257B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0872882A2 (de) * | 1997-04-15 | 1998-10-21 | Curamik Electronics GmbH | Verfahren zum Herstellen eines gewölbten Metall-Keramik-Substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI597257B (zh) | 2017-09-01 |
| DE102014215377B4 (de) | 2019-11-07 |
| DE102014215377A1 (de) | 2016-02-11 |
| WO2016020207A1 (de) | 2016-02-11 |
| TW201612137A (en) | 2016-04-01 |
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