EP3224919A4 - Laser accordable à multiples sections en ligne comprenant des réseaux échantillonnés - Google Patents

Laser accordable à multiples sections en ligne comprenant des réseaux échantillonnés Download PDF

Info

Publication number
EP3224919A4
EP3224919A4 EP15863314.9A EP15863314A EP3224919A4 EP 3224919 A4 EP3224919 A4 EP 3224919A4 EP 15863314 A EP15863314 A EP 15863314A EP 3224919 A4 EP3224919 A4 EP 3224919A4
Authority
EP
European Patent Office
Prior art keywords
tunable laser
line sections
sections including
sampled gratings
including sampled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15863314.9A
Other languages
German (de)
English (en)
Other versions
EP3224919A1 (fr
Inventor
Jun Zheng
Klaus Alexander Anselm
Huanlin Zhang
Dion Mcintosh-Dorsey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Optoelectronics Inc
Original Assignee
Applied Optoelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/551,353 external-priority patent/US10020636B2/en
Application filed by Applied Optoelectronics Inc filed Critical Applied Optoelectronics Inc
Publication of EP3224919A1 publication Critical patent/EP3224919A1/fr
Publication of EP3224919A4 publication Critical patent/EP3224919A4/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
EP15863314.9A 2014-11-24 2015-11-24 Laser accordable à multiples sections en ligne comprenant des réseaux échantillonnés Withdrawn EP3224919A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/551,353 US10020636B2 (en) 2013-06-13 2014-11-24 Tunable laser with multiple in-line sections including sampled gratings
PCT/US2015/062377 WO2016085956A1 (fr) 2014-11-24 2015-11-24 Laser accordable à multiples sections en ligne comprenant des réseaux échantillonnés

Publications (2)

Publication Number Publication Date
EP3224919A1 EP3224919A1 (fr) 2017-10-04
EP3224919A4 true EP3224919A4 (fr) 2018-08-08

Family

ID=56074962

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15863314.9A Withdrawn EP3224919A4 (fr) 2014-11-24 2015-11-24 Laser accordable à multiples sections en ligne comprenant des réseaux échantillonnés

Country Status (3)

Country Link
EP (1) EP3224919A4 (fr)
CN (1) CN107210584A (fr)
WO (1) WO2016085956A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106099639A (zh) * 2016-08-26 2016-11-09 武汉光迅科技股份有限公司 一种多波长阵列激光器及其制造方法和使用方法
CN110299589B (zh) * 2019-06-04 2021-11-09 中国人民解放军陆军工程大学 一种分频与倍频产生方法和装置
CN111786258A (zh) * 2020-06-12 2020-10-16 芯思杰技术(深圳)股份有限公司 光电二极管芯片及制作方法
US20240128715A1 (en) * 2020-06-12 2024-04-18 Phograin Technology (shenzhen) Co., Ltd. Photodiode chip, photodiode, and method and for controlling wavelength of photodiode
CN111799649A (zh) * 2020-06-12 2020-10-20 芯思杰技术(深圳)股份有限公司 光电二极管波长控制方法及装置
CN111786257A (zh) * 2020-06-12 2020-10-16 芯思杰技术(深圳)股份有限公司 光电二极管波长控制方法及光电二极管
CN114709714B (zh) * 2021-08-27 2025-09-23 因林光电科技(苏州)有限公司 一种分布式反馈激光器及其制备方法
CN115986567B (zh) * 2021-10-15 2026-03-27 中国科学院半导体研究所 双端面出光激光器及其制备方法
CN115425517A (zh) * 2022-08-18 2022-12-02 武汉敏芯半导体股份有限公司 提高波长分布均匀性的激光器制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050031009A1 (en) * 2003-08-07 2005-02-10 San-Liang Lee Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers
EP2113973A1 (fr) * 2008-04-29 2009-11-04 Alcatel Lucent Source laser et procédé pour générer une onde millimétrique
CN103956652A (zh) * 2014-04-25 2014-07-30 南京威宁锐克信息技术有限公司 集成调制器的低成本可调谐dfb半导体激光器及制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
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US5413884A (en) * 1992-12-14 1995-05-09 American Telephone And Telegraph Company Grating fabrication using electron beam lithography
US5536085A (en) * 1995-03-30 1996-07-16 Northern Telecom Limited Multi-wavelength gain-coupled distributed feedback laser array with fine tunability
KR100464359B1 (ko) * 2002-03-11 2005-01-03 삼성전자주식회사 파장 가변형 레이저 장치
US8457165B2 (en) * 2010-05-26 2013-06-04 Google Inc. Tunable multi-wavelength semiconductor laser array for optical communications based on wavelength division multiplexing
US8805191B2 (en) * 2011-09-29 2014-08-12 Applied Optoelectronics, Inc. Optical transceiver including optical fiber coupling assembly to increase usable channel wavelengths
CN102891433B (zh) * 2012-09-27 2014-09-03 中国科学院半导体研究所 可调谐激光器与光放大器单片集成器件的制作方法
CN103811994A (zh) * 2012-11-07 2014-05-21 无锡华御信息技术有限公司 工作点可变半导体激光器
US10020636B2 (en) * 2013-06-13 2018-07-10 Applied Optoelectronics, Inc. Tunable laser with multiple in-line sections including sampled gratings

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050031009A1 (en) * 2003-08-07 2005-02-10 San-Liang Lee Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers
EP2113973A1 (fr) * 2008-04-29 2009-11-04 Alcatel Lucent Source laser et procédé pour générer une onde millimétrique
CN103956652A (zh) * 2014-04-25 2014-07-30 南京威宁锐克信息技术有限公司 集成调制器的低成本可调谐dfb半导体激光器及制备方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LIANYAN LI ET AL: "Experimental demonstration of a low-cost tunable semiconductor DFB laser for access networks", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, IOP PUBLISHING LTD, GB, vol. 29, no. 9, 23 July 2014 (2014-07-23), pages 95002, XP020269078, ISSN: 0268-1242, [retrieved on 20140723], DOI: 10.1088/0268-1242/29/9/095002 *
See also references of WO2016085956A1 *

Also Published As

Publication number Publication date
EP3224919A1 (fr) 2017-10-04
CN107210584A (zh) 2017-09-26
WO2016085956A1 (fr) 2016-06-02

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RIN1 Information on inventor provided before grant (corrected)

Inventor name: ANSELM, KLAUS ALEXANDER

Inventor name: ZHENG, JUN

Inventor name: ZHANG, HUANLIN

Inventor name: MCINTOSH-DORSEY, DION

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