EP3336873A4 - MAGNETIC RESISTANCE RELAY - Google Patents

MAGNETIC RESISTANCE RELAY Download PDF

Info

Publication number: EP3336873A4
Authority: EP; European Patent Office
Prior art keywords: magnetic resistance; resistance relay; relay; magnetic; resistance
Prior art date: 2015-08-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP16834668.2A

Other languages

German (de)

French (fr)

Other versions

EP3336873A1 (en

EP3336873B1 (en

Inventor

Zhimin Zhou

James Geza Deak

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

MultiDimension Technology Co Ltd

Original Assignee

MultiDimension Technology Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-08-12

Filing date

2016-08-11

Publication date

2019-03-27

2016-08-11 Application filed by MultiDimension Technology Co Ltd filed Critical MultiDimension Technology Co Ltd

2018-06-20 Publication of EP3336873A1 publication Critical patent/EP3336873A1/en

2019-03-27 Publication of EP3336873A4 publication Critical patent/EP3336873A4/en

2024-07-10 Application granted granted Critical

2024-07-10 Publication of EP3336873B1 publication Critical patent/EP3336873B1/en

Status Active legal-status Critical Current

2036-08-11 Anticipated expiration legal-status Critical

Links

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
- H01H47/02—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for modifying the operation of the relay
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/90—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of galvano-magnetic devices, e.g. Hall-effect devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Measuring Magnetic Variables (AREA)
Hall/Mr Elements (AREA)
Electronic Switches (AREA)

EP16834668.2A 2015-08-12 2016-08-11 Magnetic resistance relay Active EP3336873B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
CN201510493695.6A CN105185655B (en)	2015-08-12	2015-08-12	A kind of magnetoelectricity ohm relay
PCT/CN2016/094587 WO2017025044A1 (en)	2015-08-12	2016-08-11	Magnetic resistance relay

Publications (3)

Publication Number	Publication Date
EP3336873A1 EP3336873A1 (en)	2018-06-20
EP3336873A4 true EP3336873A4 (en)	2019-03-27
EP3336873B1 EP3336873B1 (en)	2024-07-10

Family

ID=54907666

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP16834668.2A Active EP3336873B1 (en)	2015-08-12	2016-08-11	Magnetic resistance relay

Country Status (5)

Country	Link
US (1)	US10459042B2 (en)
EP (1)	EP3336873B1 (en)
JP (1)	JP6827033B2 (en)
CN (1)	CN105185655B (en)
WO (1)	WO2017025044A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN105185655B (en)	2015-08-12	2017-08-29	江苏多维科技有限公司	A kind of magnetoelectricity ohm relay
CN107037382B (en) *	2017-04-05	2023-05-30	江苏多维科技有限公司	Pre-modulation magneto-resistance sensor
CN107064829B (en) *	2017-05-04	2023-02-21	江苏多维科技有限公司	Single-chip high-sensitivity magneto-resistance linear sensor
CN108551339B (en) *	2017-12-15	2024-06-28	江苏多维科技有限公司	A bistable magnetic switch and system based on magnetoresistance
DE102018102998A1 (en) *	2018-02-09	2019-08-14	Infineon Technologies Ag	Apparatus, method and computer program for comparing the output of sensor cells
CN108987392B (en) *	2018-08-14	2024-01-02	黑龙江大学	Composite magnetic field sensor and manufacturing process thereof
US11165014B2 (en) *	2019-03-29	2021-11-02	Ablic Inc.	Semiconductor device
CN111277231B (en) *	2020-02-18	2022-02-18	江苏多维科技有限公司	A gain-controllable magnetoresistive analog amplifier
CN217406515U (en) *	2022-05-12	2022-09-09	江苏多维科技有限公司	Magnetic switch with filtering function
US11892524B1 (en) *	2022-10-13	2024-02-06	Allegro Microsystems, Llc	Reduced area magnetic field sensor topology
CN115541984B (en) *	2022-11-30	2023-03-07	中国电力科学研究院有限公司	An adaptive weak current monitoring device and monitoring method
CN118054778B (en) *	2024-01-08	2024-12-06	山东航天电子技术研究所	A solid-state switch with memory function and control method
CN118591262A (en) *	2024-04-22	2024-09-03	淮阴师范学院	A non-reciprocal magnetoresistance device based on independent gate structure and its preparation method

Citations (8)

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Publication number	Priority date	Publication date	Assignee	Title
CN2501256Y (en) *	2001-10-24	2002-07-17	库万军	Magnetosensitive approach switch
US20100045268A1 (en) *	2008-08-22	2010-02-25	Honeywell International Inc.	Comparator circuit having latching behavior and digital output sensors therefrom
JP2011187211A (en) *	2010-03-05	2011-09-22	Alps Electric Co Ltd	Magnetic switch
US20120280681A1 (en) *	2011-05-06	2012-11-08	Allegro Microsystems, Inc.	Magnetic Field Sensor Having A Control Node To Receive A Control Signal To Adjust A Threshold
CN103384141A (en) *	2013-07-24	2013-11-06	江苏多维科技有限公司	Magnetic-resistance mixer
CN104065367A (en) *	2013-03-20	2014-09-24	江苏多维科技有限公司	Magnetoresistance switch sensor with low power consumption
WO2014161482A1 (en) *	2013-04-01	2014-10-09	江苏多维科技有限公司	Push-pull flip-chip half-bridge magnetoresistive switch
CN102790613B (en) *	2011-05-16	2015-04-29	江苏多维科技有限公司	Switching sensor

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JP2009162540A (en) *	2007-12-28	2009-07-23	Alps Electric Co Ltd	Magnetometric sensor and its manufacturing method
JP2010258979A (en) *	2009-04-28	2010-11-11	Alps Green Devices Co Ltd	Magnetic coupling type isolator
US9203394B2 (en) *	2011-10-06	2015-12-01	Infineon Technologies Ag	Integrated magnetic field sensor-controlled switch devices
KR101343037B1 (en) *	2011-11-10	2013-12-18	삼성전자 주식회사	Wireless radio frequency coil for magnetic resonance imaging, power control method for the coil and magnetic resonance imaging machine using the coil
WO2014156751A1 (en) *	2013-03-26	2014-10-02	株式会社村田製作所	Magnetic sensor
CN204129826U (en) *	2014-06-23	2015-01-28	江苏多维科技有限公司	A kind of Detecting of coin system
CN204991599U (en) *	2015-08-12	2016-01-20	江苏多维科技有限公司	Magnetism resistance relay
CN105185655B (en)	2015-08-12	2017-08-29	江苏多维科技有限公司	A kind of magnetoelectricity ohm relay

2015
- 2015-08-12 CN CN201510493695.6A patent/CN105185655B/en active Active
2016
- 2016-08-11 US US15/749,666 patent/US10459042B2/en active Active
- 2016-08-11 WO PCT/CN2016/094587 patent/WO2017025044A1/en not_active Ceased
- 2016-08-11 JP JP2018506203A patent/JP6827033B2/en active Active
- 2016-08-11 EP EP16834668.2A patent/EP3336873B1/en active Active

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN2501256Y (en) *	2001-10-24	2002-07-17	库万军	Magnetosensitive approach switch
US20100045268A1 (en) *	2008-08-22	2010-02-25	Honeywell International Inc.	Comparator circuit having latching behavior and digital output sensors therefrom
JP2011187211A (en) *	2010-03-05	2011-09-22	Alps Electric Co Ltd	Magnetic switch
US20120280681A1 (en) *	2011-05-06	2012-11-08	Allegro Microsystems, Inc.	Magnetic Field Sensor Having A Control Node To Receive A Control Signal To Adjust A Threshold
CN102790613B (en) *	2011-05-16	2015-04-29	江苏多维科技有限公司	Switching sensor
CN104065367A (en) *	2013-03-20	2014-09-24	江苏多维科技有限公司	Magnetoresistance switch sensor with low power consumption
EP2978131A1 (en) *	2013-03-20	2016-01-27	Multidimension Technology Co., Ltd	Low-power magnetic resistance switch sensor
WO2014161482A1 (en) *	2013-04-01	2014-10-09	江苏多维科技有限公司	Push-pull flip-chip half-bridge magnetoresistive switch
EP2983293A1 (en) *	2013-04-01	2016-02-10	Multidimension Technology Co., Ltd	Push-pull flip-chip half-bridge magnetoresistive switch
CN103384141A (en) *	2013-07-24	2013-11-06	江苏多维科技有限公司	Magnetic-resistance mixer
EP3026814A1 (en) *	2013-07-24	2016-06-01	Multidimension Technology Co., Ltd.	Magneto-resistive mixer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2017025044A1 *

Also Published As

Publication number	Publication date
EP3336873A1 (en)	2018-06-20
JP2018526900A (en)	2018-09-13
US20180224509A1 (en)	2018-08-09
EP3336873B1 (en)	2024-07-10
CN105185655B (en)	2017-08-29
JP6827033B2 (en)	2021-02-10
CN105185655A (en)	2015-12-23
WO2017025044A1 (en)	2017-02-16
US10459042B2 (en)	2019-10-29

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