WO2017025044A1 - 一种磁电阻继电器 - Google Patents

一种磁电阻继电器 Download PDF

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Publication number
WO2017025044A1
WO2017025044A1 PCT/CN2016/094587 CN2016094587W WO2017025044A1 WO 2017025044 A1 WO2017025044 A1 WO 2017025044A1 CN 2016094587 W CN2016094587 W CN 2016094587W WO 2017025044 A1 WO2017025044 A1 WO 2017025044A1
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WO
WIPO (PCT)
Prior art keywords
magnetoresistive
state
relay
sensing unit
integrated circuit
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Ceased
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PCT/CN2016/094587
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English (en)
French (fr)
Inventor
周志敏
迪克·詹姆斯·G
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MultiDimension Technology Co Ltd
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MultiDimension Technology Co Ltd
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Priority to US15/749,666 priority Critical patent/US10459042B2/en
Priority to EP16834668.2A priority patent/EP3336873B1/en
Priority to JP2018506203A priority patent/JP6827033B2/ja
Publication of WO2017025044A1 publication Critical patent/WO2017025044A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/02—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for modifying the operation of the relay
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/90—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of galvano-magnetic devices, e.g. Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to the field of magnetic sensors, and more particularly to a magnetoresistive relay.
  • the relay As a common electronic component, the relay is used to control the on/off of the circuit. Commonly, it includes mechanical and electronic relays.
  • the electromagnetic field is generated by the excitation coil to act on the relay armature, and the opening and closing of the armature is controlled to control the opening and closing of the circuit.
  • the biggest problem with relays is the mechanical closure and opening of the armature, which is prone to shocks and thus has a limited life.
  • Another commonly used relay also includes a reed switch relay, which acts on the reed switch by an electromagnetic field. When the electromagnetic field is activated, the reed switch is closed, the circuit is turned on, and when the electromagnetic field is smaller than the starting magnetic field, the reed switch is disconnected.
  • the reed switch is also a mechanical on-off type, which is also prone to shock.
  • the magnetoresistive sensor can also be designed as a magnetoresistive switch.
  • the advantage is that the magnetoresistive switch has no mechanical continuity and is controlled by the electronic switch. Therefore, its theoretical service life can be unlimited. Therefore, if the magnetoresistive switch is fabricated into a magnetoresistive relay by integrating the electromagnetic coil, it will replace the reed switch and the performance will be superior to that of the reed switch.
  • the problem of the magnetoresistive switch is that it is common.
  • the magnetoresistive switch outputs a digital signal that passes through the high and low levels of the signal.
  • the magnetoresistive switch suitable for the relay needs to be designed to simulate the on-off signal, and can realize the access and control of the external circuit, and has a certain high-power function.
  • the invention provides a magnetoresistive relay which is designed to simulate an on-off signal, can realize the access and control of an external circuit, and has a certain high-power function.
  • a magnetoresistive relay comprising a substrate, a magnetic field excitation coil on the substrate, a magnetoresistive sensor, an integrated circuit switch, and an excitation signal input and output electrode, an external circuit input and output electrode, a power input electrode and a ground electrode,
  • the excitation signal input and output electrodes are respectively connected to the two ends of the magnetic field excitation coil, and the external circuit input and output electrodes are respectively connected to the integrated circuit switch, and the power input end and the ground end of the magnetoresistive sensor are respectively
  • the power input electrode is connected to the ground electrode, and the power input end and the ground end of the integrated circuit switch are respectively connected to the power input electrode and the ground electrode, and when working, input or open in the magnetic field excitation coil
  • the control signal is turned on to generate an exciting magnetic field to act on the magnetoresistive sensor, and the integrated circuit switch receives an output signal of the magnetoresistive sensor to thereby perform an on or off operation of the external circuit.
  • the magnetoresistive sensor is a TMR, GMR, or AMR magnetoresistive sensor.
  • the magnetoresistive sensor is a reference bridge magnetoresistive sensor or a push-pull bridge magnetoresistive sensor.
  • the reference bridge magnetoresistive sensor and the push-pull bridge magnetoresistive sensor are full bridge, half bridge or quasi-bridge structures.
  • the magnetic field excitation coil is a planar coil or a three-dimensional coil.
  • the planar coil is a helical coil comprising two regions having opposite current directions, and any of the regions includes N Long straight wires arranged in parallel, the long straight wires having the same length and width, and the spacing between the long straight wires being the same, and the N is a positive integer.
  • the push arm and the pull arm of the push-pull magnetoresistive sensor are respectively located in two of the regions of the spiral coil, and the push arm and the arm include M a series of magnetoresistive sensing unit strings, each of which includes K magnetoresistive sensing units, M*K
  • the magnetoresistive sensing units are interconnected into a two-port structure, the sensitive axis of the magnetoresistive sensing unit is perpendicular to the long straight wire of the region, and the magnetoresistive sensing unit of the push arm is in the corresponding region N
  • the positional relationship of the parallel straight strips and the magnetoresistive sensing unit of the arm are in the same positional relationship with the N parallel straight strips in the corresponding area, the M, K Both are positive integers.
  • the reference arm and the sensitive arm of the reference bridge magnetoresistive sensor are both located in a central region of the spiral coil, the central region has no wires, and the reference arm is covered with a soft magnetic flux shielding layer.
  • the planar coil includes N long straight wires 1 and long straight wires 2 alternately arranged, the long straight wires 1 and long straight wires 2 parallel, and any adjacent long straight wires have the same spacing, and adjacent long straight wires 1 and long straight wires 2 are connected in series at both ends, the long straight wires 1 and the long straight wires 2 Have the same dimensions and have opposite current directions.
  • the push-pull magnetoresistive sensor comprises a magneto-resistance sensing unit string and a magnetizing resistance sensing unit string, wherein the magneto-resistance sensing unit string and the magnetizing resistance sensing unit string are alternately located in the strip Straight wire 1 and the long straight wire Above or below 2.
  • the reference bridge magnetoresistive sensor includes a reference magnetoresistive sensing unit string and a sensitive magnetoresistive sensing unit string; the reference magnetoresistive sensing unit string is located in the adjacent the long straight wire 1 or a long straight Wire 2 Directly above or directly below the intermediate position, the sensitive magnetoresistive sensing unit string is located directly above or below the long straight wire 1 or the long straight wire 2.
  • a magnetic shield layer between the magnetic shield layer and the magnetic field excitation coil.
  • the three-dimensional coil is a solenoid coil
  • the reference bridge magnetoresistive sensor includes a reference magnetoresistive sensing unit string and a sensitive magnetoresistive sensing unit string; the reference magnetoresistive sensing unit string and the sensitive magnetoresistive sensing unit
  • the cell strings are respectively located at the solenoid axis.
  • the three-dimensional coil is two solenoid coils connected in series, and the two solenoid coils have opposite winding directions, and the push-pull magnetoresistive sensor comprises a magneto-resistance sensing unit string and a magnetizing resistance sensing
  • the cell string, the push magnetoresistive sensing cell string and the magnetizing resistance sensing cell string are respectively located at two of the solenoid axes.
  • the working mode of the magnetoresistive relay is a single point working mode
  • the integrated circuit switch transitions from an off state to an on state, and only when the forward current of the excitation coil is less than Ion-off, the integrated circuit The switch transitions from an on state to an off state;
  • the working mode of the magnetoresistive relay is a bipolar working mode, and the integrated circuit switch changes from an off state to an on state only when the forward current of the excitation coil is greater than Ion, only when the forward current of the excitation coil is less than When Ioff, the integrated circuit switch will change from the on state to the off state;
  • the working mode of the magnetoresistive relay is a unipolar mode of operation, and the integrated circuit switch changes from an off state to an on state only when the excitation coil is from a forward current greater than Ion, and the excitation current must be reversed When the direction is greater than Ioff, the integrated circuit switch will change from the on state to the off state;
  • the working mode of the magnetoresistive relay is an all-pole operating mode
  • the integrated circuit switch changes from an off state to an on state, when the excitation coil is from When the forward direction is less than Ioff1, the integrated circuit switch changes from an on state to an off state, or when the excitation coil circuit is greater than -Ion1 from a negative direction, the integrated circuit switch changes from an off state to an on state, When the excitation coil circuit is less than -Ioff1 from the negative direction, the integrated circuit switch changes from the on state to the off state.
  • the integrated circuit switch includes a low pass filter, an amplifier, a comparator, a drive latch control circuit, and a MOSFET tube,
  • the low pass filter is connected to the magnetoresistive sensor output signal
  • the amplifier is connected to the low pass filter
  • the comparator is connected to the amplifier
  • the comparator output is sent to the drive latch control circuit
  • the driving latch control circuit drives on and off of the MOSFET, and the MOSFET is connected to the external circuit.
  • the number of the MOSFET tubes is two, and the two MOSFETs are connected to each other.
  • One source of the MOSFET is interconnected with the drain of the other MOSFET, and the two interconnect gates are respectively connected.
  • the remaining source and drain terminals of the two MOSFETs are connected to the external circuit.
  • Figure 1 is a schematic diagram of a magnetoresistive relay
  • Figure 2 is a cross-sectional view 1 of the magnetoresistive relay
  • Figure 3 is a cross-sectional view 2 of the magnetoresistive relay
  • Figure 4 is a structural diagram of a magnetoresistive sensor
  • Figure 5 is a schematic diagram of the distribution structure of a planar spiral coil and a magnetoresistive sensor
  • Figure 6 is a schematic diagram of the distribution structure of a planar spiral coil and a magnetoresistive sensor
  • Figure 7 is a distribution diagram of the magnetoresistive sensor array on the coil
  • Figure 8 is a distribution diagram of the magnetoresistive sensor array on the coil
  • Figure 9 is a distribution structure diagram of a meandering planar coil and a push-pull magnetoresistive sensor
  • Figure 10 is a distribution structure diagram of a meandering planar coil and a reference bridge magnetoresistive sensor
  • Figure 11 is a structural diagram of a three-dimensional solenoid and a reference bridge magnetoresistive sensor
  • Figure 12 is a structural diagram of a three-dimensional solenoid and a push-pull magnetoresistive sensor
  • Figure 13 is a single point operation mode diagram of the magnetoresistive relay
  • Figure 15 is a unipolar operation mode diagram of a magnetoresistive relay
  • Figure 16 is a full-scale operation mode diagram of the magnetoresistive relay
  • Figure 17 shows the signal processing diagram of the magnetoresistive relay.
  • a magnetoresistive relay 1 including a substrate 2, a magnetic field excitation coil 3 on the substrate 2, and a magnetoresistive sensor 4, and integrated circuit switch 5, and excitation signal input electrode 6, output electrode 7, external circuit input electrode 8, output electrode 9, power input electrode 10 and ground electrode 11, magnetic field excitation coil 3
  • the two ends are respectively connected with the excitation signal input electrode 6 and the output electrode 7, and the magnetoresistive sensor 4 transmits the output signal to the integrated circuit switch 5, the external circuit input electrode 8 and the output electrode 9 Connected to the integrated circuit switch 5 respectively, the power input terminal and the ground terminal of the magnetoresistive sensor 4 are respectively connected to the power input electrode 10 and the ground electrode 11, and the integrated circuit switch 5
  • the power input end and the ground end are connected to the power input electrode 10 and the ground electrode 11, respectively.
  • the principle is that the excitation field signal Hex is generated by the magnetic field excitation coil 3. After acting on the magnetoresistive sensor 4, the output signal Vout acts on the integrated circuit switch 5, and the integrated circuit switch 5 determines the on and off of the external circuit according to the signal of the excitation coil 3.
  • Figure 2-3 shows the two cross sections of the magnetoresistive relay, respectively.
  • the structure of the magnetoresistive sensor described in Figures 2 and 3 includes the substrate 21 and 31, planar coils 22 and 32 above the substrate, and magnetoresistive sensors 23 and 33 on the upper surfaces of the planar coils 22 and 32, and magnetoresistive sensors 23 and Magnetic shields 24 and 34 above 33 Wherein the magnetoresistive sensor is located between the excitation coil and the magnetic shielding plate, so another possible order is a magnetic shielding layer, a magnetoresistive sensor, and an excitation coil.
  • Figure 2 and Figure 3 The difference is in the difference in the structure of the excitation coils 22 and 32, in Fig. 2, the coil 22 In the spiral structure, the current directions of the coil wires on both sides are opposite with respect to the central region, and the current directions of the coil wires on the same side are the same, and the adjacent coil wires in Fig. 3 have opposite circuit directions.
  • Figure 4 shows the structure of the magnetoresistive sensor.
  • Figure 4a shows the half-bridge reference bridge structure
  • Figure 4b shows the half-bridge push-pull structure.
  • Figure 4c For reference to the full bridge structure, Figure 4d is a push-pull full-bridge structure and, in addition, a form of a quasi-bridge structure.
  • Figure 5 and Figure 6 show the distribution of two typical planar spiral coils and magnetoresistive sensors on a planar coil.
  • structures 40 and 50 41 and 51 are magnetic shields
  • 42 and 52 are spiral coils, of which 42 is a polygonal structure
  • 52 is a quadrilateral structure
  • 42 contains two sections 43 and 44
  • 52 Contains two sections 53 and 54 , two zones 43 and 44 , 53 and 54
  • Each includes a plurality of long straight wires having the same length and width, and the spacing between adjacent long straight wires is the same, and the currents of the long straight wires in the two regions are opposite in direction.
  • each has a symmetrical magnetic field distribution characteristic, that is, the magnetic field distribution characteristics perpendicular to the current direction in the two regions are opposite, so this provides conditions for the placement of the push arm and the arm of the push-pull magnetoresistive sensor.
  • the push-pull magnetoresistive sensor is a full-bridge configuration with 2 push arms and 2 Four arms, a total of four regions, of which 40, the push region 43 includes 45 and 48 sub-regions for the push arm, and the pull region 44 contains 46 and 47 Two sub-areas for placing the arm.
  • the push area 53 includes two sub-areas 57 and 56 for placing the push arm.
  • the pull area 54 contains 55 and 58. Two sub-areas for placing the arm.
  • Figure 7 and Figure 8 They are respectively arranged and connected to the magnetoresistive sensing unit in the region of the push arm or the arm.
  • the magnetoresistive sensing units are arranged in an array, and the magnetic field sensitive directions of all the magnetoresistive sensing units are perpendicular to the current direction.
  • the magnetoresistive sensing unit is formed in series to form a magnetoresistive sensing unit string, and then connected in series to form a two-port structure.
  • the magnetoresistive sensing unit string is parallel to the long straight wire
  • Figure 8 The magnetoresistive sensing unit string is perpendicular to the long straight wire.
  • the magnetoresistive sensing unit is located directly above or below the coil in the region, and the magnetoresistive sensing unit can be located at the center of the wire. Above or below, it can also be located at an off-center position, for example, at the gap of the wire.
  • the magnitude of the magnetic field is proportional to The coil current intensity, therefore, the total resistance of the push arm and the arm is also proportional to the current intensity, and since the magnetoresistive sensing unit in the region where the push arm and the arm are located are exactly the same on the long straight wire, the push arm and The total resistance change of the arm is exactly the same, and the output of the entire push-pull full-bridge magnetoresistive sensor will be proportional to the magnitude of the current.
  • Figure 9-10 shows the distribution characteristics of the magnetoresistive sensing unit strings of the meandering planar coil and the magnetoresistive sensor.
  • Figure 9 and Figure 10 correspond respectively.
  • 61 and 71 are magnetic shields
  • 62 and 72 The zigzag planar coil comprises a plurality of long straight wires arranged in parallel and equidistantly arranged, the long straight wires having the same length and width, and the adjacent two long straight wires are connected in series and have opposite current directions, FIG.
  • the push magnetoresistive sensing unit string 63 and the magnetizing resistor sensing unit string 65 Alternatingly located directly above or below the adjacent two long straight wires, and the push magnetoresistive sensing cell string and the magnetizing resistive sensing cell string are respectively connected into a push arm and a pull arm, and the rear push arm and the pull arm The arms are interconnected into a push-pull bridge structure.
  • Figure Corresponding to 10 is a reference bridge structure magnetoresistive sensor, wherein the reference magnetoresistive sensing unit string 73 and the sensitive magnetoresistive sensing unit string 75 Alternatingly located at a central position between adjacent two long straight wires, and directly adjacent to or directly below the center position is a forward current or a strip that is also a reverse current.
  • Figure 11 and Figure 12 show the distribution structure of the three-dimensional coil and magnetoresistive sensing unit string, of which 200 In the structure, the current direction of the top layer coil 201 and the bottom layer coil 202 included in the three-dimensional coil is as shown in the figure, with opposite current directions, 203
  • the reference arm of the reference bridge magnetoresistive sensor comprises a ferromagnetic shielding layer, in particular a soft magnetic flux shielding layer.
  • the three-dimensional coil may be a solenoid coil or a three-dimensional solenoid.
  • the three-dimensional solenoid of Fig. 12 includes two solenoids 301 and 302 wound in opposite directions, and the magnetoresistive sensing unit 303 And the magnetoresistive sensing unit 304 is placed in the solenoids 301 and 302, respectively, and since the two have completely opposite magnetic field directions, a push-pull magnetoresistive sensing bridge is formed.
  • Figure 13-16 shows the four working modes of the magnetoresistive relay, and Figure 13 shows the single-point working mode.
  • the integrated circuit switch transitions from an off state to an on state only when the excitation coil forward current is greater than Ion-off, and the integrated circuit switch is only when the excitation coil forward current is less than Ion-off
  • the on state changes to the off state.
  • Figure 14 is a bipolar mode of operation, the integrated circuit switch changes from an off state to an on state only when the forward current of the excitation coil is greater than Ion, and the integrated circuit switch only when the forward current of the excitation coil is less than Ioff Will change from the on state to the off state.
  • Figure 15 is a unipolar mode of operation, the integrated circuit switch changing from an off state to an on state when the excitation coil is greater than Ion from the forward current, and the excitation current must be greater than Ioff from the opposite direction, the integration The circuit switch will turn into an off state.
  • Figure 16 is an omnipolar mode of operation, when the excitation coil circuit is greater than Ion1 from the forward direction, the integrated circuit changes from an off state to an on state, and when the excitation coil is less than Ioff1 from the forward direction, the integration
  • the circuit changes from an on state to an off state, or when the excitation coil circuit is greater than -Ion1 from a negative direction, the integrated circuit changes from an off state to an on state, and the excitation coil circuit is less than -Ioff1 from a negative direction
  • the integrated circuit changes from an on state to an off state.
  • FIG. 17 is a signal processing diagram of a magnetoresistive relay, wherein FIG. 100 is a magnetoresistive sensor, in this example, a half bridge magnetoresistive sensor, 101 is an integrated circuit switch, 102 is an external circuit, and an output signal of the magnetoresistive sensor 100 passes.
  • the low pass filter 103 removes noise and is amplified by the amplifier 104 and compared with the reference voltage by the comparator 105.
  • the output signal enters a latch, control and drive circuit 106, and the drivers 107 and 108 are formed.
  • MOSFET switch in which the gates of 107 and 108 MOSFETs are interconnected, 107 and the drains of the source and 108 are interconnected, the two interconnects are connected to the output of 106, and the external circuit 102 is connected to the drain of 107 and The source of 108, in operation, the magnetic field response signal outputted by the magnetoresistive sensor 100 of the magnetoresistive relay passes through the filter 103, the amplifier 104 and the comparator 105, and is converted into a control, latch and drive signal of 106, controlling two The switches formed by the MOSFET tubes 107 and 108 are turned on and off, thereby enabling the external circuit 102 to perform a switching operation.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
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Abstract

一种磁电阻继电器（1），包括：衬底（2），位于衬底之上的磁场激励线圈（3），磁电阻传感器（4），集成电路开关（5），以及激励信号输入电极（6），激励信号输出电极（7），外电路输入电极（8），外电路输出电极（9），电源输入电极（10）和地电极（11），磁场激励线圈两端分别连接激励信号输入电极和激励信号输出电极，磁电阻传感器将输出信号传输到集成电路开关，外电路输入电极和外电路输出电极分别与集成电路开关相连，磁电阻传感器和集成电路开关的电源输入端和地端分别与电源输入电极和地电极相连，工作时，在磁场激励线圈中输入开或关控制信号，使之产生激励磁场作用于磁电阻传感器，集成电路开关接收磁电阻传感器的输出信号，从而实现对外电路的通或断操作，该磁电阻继电器操作简单，功耗低，尺寸小且寿命长。

Description

一种磁电阻继电器
技术领域
本发明涉及磁性传感器领域，特别涉及 一种磁电阻继电器 。
背景技术
继电器作为一种常用电子元器件用于控制电路的通断，常见的包括机械电子类继电器，通过激励线圈产生电磁场作用于继电器衔铁，通过控制衔铁的闭合和开启来控制电路的通断，机械电子继电器最大的问题在于依赖衔铁的机械闭合和开启，容易产生冲击，从而使得其寿命有限。
另外一种常用的继电器还包括干簧管继电器，通过电磁场作用于干簧管，当电磁场启动时，干簧管产生闭合，电路导通，当电磁场小于所述启动磁场时，干簧管断开，干簧管继电器同样属于机械通断类型，同样容易产生冲击。
类似于干簧管开关，磁阻传感器也可以设计成磁电阻开关，其优点在于，磁电阻开关没有机械通断的问题，通过电子开关进行控制通断，因此，其理论使用寿命可以是无限的，因此，如果将磁电阻开关通过集成电磁线圈的方法制造成磁电阻继电器，将可以取代干簧管，且性能上也将优于干簧管继电器，此外，磁电阻开关的问题还在于，常见的磁电阻开关输出的为数字信号，通过高电平和低电平信号。而适用于继电器的磁电阻开关，需要设计成模拟通断信号，并可以实现对外电路的接入和控制，具有一定的大功率功能。
发明内容
本发明提供了一种设计成模拟通断信号，可以实现对外电路的接入和控制，具有一定的大功率功能的磁电阻继电器。
本发明所提出的 一种磁电阻继电器，包括衬底、位于衬底之上的磁场激励线圈、磁电阻传感器、集成电路开关、以及激励信号输入、输出电极，外电路输入、输出电极，电源输入电极和地电极，所述磁场激励线圈两端分别连接所述激励信号输入、输出电极，所述外电路输入、输出电极分别与所述集成电路开关相连，所述磁电阻传感器的电源输入端和地端分别和所述电源输入电极和所述地电极相连，所述集成电路开关的电源输入端和地端分别和所述电源输入电极和所述地电极相连，工作时，在所述磁场激励线圈中输入开或关控制信号，使之产生激励磁场作用于所述磁电阻传感器，所述集成电路开关接收所述磁电阻传感器的输出信号，从而实现对所述外电路的通或断操作。
所述磁电阻传感器为TMR、GMR、或者AMR磁电阻传感器。
所述磁电阻传感器为参考桥式磁电阻传感器或推挽桥式磁电阻传感器。
所述参考桥式磁电阻传感器、所述推挽桥式磁电阻传感器为全桥、半桥或者准桥结构。
所述磁场激励线圈为平面线圈或三维线圈。
所述平面线圈为螺旋线圈，包括 具有相反电流方向的两个区域，且任一所述区域均包括 N 个平行排列的长条直导线，所述长条直导线具有相同的长度和宽度，且长条直导线间的间距相同，所述 N 为正整数。
所述推挽式磁电阻传感器的推臂和挽臂分别位于所述螺旋线圈的两个所述区域内，所述推臂和挽臂均包括 M 个磁电阻传感单元串，所述任一磁电阻传感单元串均包括 K 个磁电阻传感单元， M*K 个所述磁电阻传感单元互联成两端口结构，所述磁电阻传感单元敏感轴垂直于所述区域的长条直导线，所述推臂的磁电阻传感单元在所对应的区域与 N 个所述平行排列的长条直导线的位置关系和所述挽臂的磁电阻传感单元在所对应的区域与 N 个所述平行排列的长条直导线位置关系相同，所述 M 、 K 均为正整数。
所述参考桥式磁电阻传感器的参考臂和敏感臂均位于螺旋线圈的中心区域，所述中心区域没有导线，所述参考臂上方覆盖有一软磁通量屏蔽层。
所述平面线圈包括交替排列的 N 条长条直导线 1 和长条直导线 2 ，所述长条直导线 1 和长条直导线 2 平行，且任意相邻的长条直导线之间具有相同间距，且相邻长条直导线 1 和长条直导线 2 在两端串联连接，所述长条直导线 1 和长条直导线 2 具有相同的尺寸，且具有相反的电流方向。
所述推挽式磁电阻传感器包括推磁电阻传感单元串和挽磁电阻传感单元串，所述推磁电阻传感单元串和所述挽磁电阻传感单元串交替位于所述长条直导线 1 和所述长条直导线 2 的上方或者下方。
所述参考桥式磁电阻传感器包括参考磁电阻传感单元串和敏感磁电阻传感单元串；所述参考磁电阻传感单元串位于所述相邻所述长条直导线 1 或者长条直导线 2 的中间位置的正上方或者正下方，所述敏感磁电阻传感单元串位于长条直导线 1 或者长条直导线 2 的正上方或者正下方。
还包括磁屏蔽层， 所述磁电阻传感器位于所述磁屏蔽层和所述磁场激励线圈之间 。
所述三维线圈为螺线管线圈，所述参考桥式磁电阻传感器包括参考磁电阻传感单元串和敏感磁电阻传感单元串；所述参考磁电阻传感单元串和敏感磁电阻传感单元串分别位于所述螺线管轴心处。
所述三维线圈为两个串联连接的螺线管线圈，且两个螺线管线圈具有相反的缠绕方向，所述推挽式磁电阻传感器包括推磁电阻传感单元串和挽磁电阻传感单元串，所述推磁电阻传感单元串和挽磁电阻传感单元串分别位于两个所述螺线管轴心处。
所述磁电阻继电器的工作模式为 单点工作模式 ，则仅当所述激励线圈正向电流大于Ion-off时，所述集成电路开关从关断态转变导通态，仅当所述激励线圈正向电流小于Ion-off时，所述集成电路开关从导通态转变成关断态；
或者所述磁电阻继电器的工作模式为双极工作模式，则仅当激励线圈正向电流大于Ion时，所述集成电路开关从关断态变成导通态，仅当激励线圈正向电流小于Ioff时，所述集成电路开关才会从导通态变成关断态；
或者所述磁电阻继电器的工作模式为单极工作模式，则只有当激励线圈从正向电流大于Ion时，所述集成电路开关从关断态变为导通态，所述激励电流必须从反方向大于Ioff时，所述集成电路开关才会从导通态变成关断态；
或者所述磁电阻继电器的工作模式为全极工作模式，则当所述激励线圈电路从正向大于Ion1时，所述集成电路开关从关断态变成导通态，当所述激励线圈从正向小于Ioff1时，所述集成电路开关从导通态变成关断态，或者所述激励线圈电路从负向大于-Ion1时，所述集成电路开关从关断态变成导通态，所述激励线圈电路从负向小于-Ioff1时，所述集成电路开关从导通态变成关断态。
所述集成电路开关包括低通滤波器、放大器、比较器、驱动锁存控制电路，以及MOSFET管 , 所述低通滤波器连接所述磁电阻传感器输出信号，所述放大器连接所述低通滤波器，所述比较器连接所述放大器，所述比较器输出结果输送到所述驱动锁存控制电路，所述驱动锁存控制电路驱动所述MOSFET管的通断，所述MOSFET连接所述外电路。
所述MOSFET管数量为两个，两个所述MOSFET管珊极互联，其中一个所述MOSFET管的源极和另一个所述MOSFET管的漏极互联，且所述两个互联栅极分别连接到所述驱动锁存控制电路上，所述两个MOSFET管剩下的源极和漏极两端连接所述外电路。
附图说明
图 1 为磁电阻继电器示意图；
图 2 为磁电阻继电器截面图一；
图 3 为磁电阻继电器截面图二；
图 4 为磁电阻传感器结构图；
图 5 为平面螺旋线圈及磁电阻传感器分布结构图一；
图 6 为平面螺旋线圈及磁电阻传感器分布结构图二；
图 7 为磁电阻传感器阵列在线圈上分布图一；
图 8 为磁电阻传感器阵列在线圈上分布图二；
图 9 为曲折平面线圈及推挽式磁电阻传感器分布结构图；
图 10 为曲折平面线圈及参考桥式磁电阻传感器分布结构图；
图 11 为三维螺线圈及参考桥式磁电阻传感器结构图；
图 12 为三维螺线圈及推挽式磁电阻传感器结构图；
图 13 为磁电阻继电器的单点操作模式图；
图 14 为磁电阻继电器的双极操作模式图；
图 15 为磁电阻继电器的单极操作模式图；
图 16 为磁电阻继电器的全级工作模式图；
图 17 为磁电阻继电器的信号处理图。
具体实施方式
下面将参考附图并结合实施例，来详细说明本发明。
实施例一
图 1 为磁电阻继电器 1 的结构图，包括衬底 2 ，位于衬底 2 之上的磁场激励线圈 3 ，磁电阻传感器 4 ，以及集成电路开关 5 ， 以及激励信号输入电极6、输出电极7，外电路输入电极8、输出电极9，电源输入电极10和地电极11， 磁场激励线圈 3 两端分别连接激励信号输入电极 6 、输出电极 7 ，磁电阻传感器 4 将输出信号传输到集成电路开关 5 ，外电路输入电极 8 、输出电极 9 分别与集成电路开关 5 相连，磁电阻传感器 4 的电源输入端和地端分别和电源输入电极 10 和地电极 11 相连，集成电路开关 5 的电源输入端和地端分别和电源输入电极 10 和地电极 11 相连， 其原理为磁场激励线圈3发生激励磁场信号Hex，作用于磁电阻传感器4之后，其输出信号Vout作用于集成电路开关5，集成电路开关5根据激励线圈3的信号来确定外电路的通断。
实施例二
图 2-3 分别为磁电阻继电器的两种截面，图 2 和图 3 中所述磁电阻传感器的结构包括衬底 21 和 31 ，位于衬底之上的平面线圈 22 和 32 ，以及位于平面线圈 22 和 32 上表面的磁电阻传感器 23 和 33 ，以及位于磁电阻传感器 23 和 33 之上的磁屏蔽层 24 和 34 ，其中磁电阻传感器位于所述激励线圈和磁屏蔽板之间，因此另一种可能的顺序为衬底之上依次为磁屏蔽层，磁电阻传感器、激励线圈。图 2 和图 3 的差别在于，所述激励线圈 22 和 32 的结构的差异，图 2 中，所述线圈 22 为螺旋形结构，相对于中心区域，两边的线圈导线的电流方向相反，同侧的线圈导线电流方向相同，而图 3 中的相邻的线圈导线具有相反的电路方向。
实施例三
图 4 为磁电阻传感器的结构图，图 4a 为半桥参考桥式结构，图 4b 为半桥推挽式结构，图 4c 为参考全桥结构，图 4d 为推挽式全桥结构，此外，还包括准桥结构的形式。
实施例四
图 5 和图 6 为两种典型平面螺旋线圈及磁电阻传感器在平面线圈上的分布图，结构 40 和 50 中， 41 和 51 为磁屏蔽层， 42 和 52 都为螺旋线圈，其中 42 为多边形结构， 52 为四边形结构， 42 包含两段区域 43 和 44 ， 52 包含两段区域 53 和 54 ，两个区域 43 和 44 、 53 和 54 均包含多段长条直导线，具有相同的长度和宽度，且相邻长条直导线间的间距相同，两个区域内的长条直导线的电流方向相反。因此，在两个区域 43 和 44 ， 53 和 54 分别具有对称的磁场分布特征，即两个区域内的垂直于电流方向的磁场分布特征相反，因此这给推挽式磁电阻传感器的推臂和挽臂的放置提供了条件。
40 和 50 结构中，推挽式磁电阻传感器为全桥结构，包含 2 个推臂和 2 个挽臂，共形成的四个区域，其中 40 结构中，推区域 43 包括 45 和 48 两个子区域，用于推臂，挽区域 44 包含 46 和 47 两个子区域，用于放置挽臂，图 50 结构中，推区域 53 包括 57 和 56 两个子区域，用于放置推臂，挽区域 54 包含 55 和 58 两个子区域，用于放置挽臂。
图 7 和图 8 分别为推臂或挽臂区域内的磁电阻传感单元的排布及连接图，所述磁电阻传感单元形成阵列式排布，所有磁电阻传感单元的磁场敏感方向均垂直于电流方向，其通过并联或者串联形成两端口的推臂或挽臂结构，在图 7 和图 8 中，所述磁电阻传感单元串联形成磁电阻传感单元串，而后串联成两端口结构，图 7 中，所述磁电阻传感单元串平行于长条直导线，而在图 8 中，所述磁电阻传感单元串垂直于长条直导线，必须指出的是，磁电阻传感单元位于所在区域内线圈的正上方或者正下方，磁电阻传感单元可以位于导线中心的正上方或者正下方，也可以位于偏离中心位置处，例如也可以位于导线的间隙处，这样的原因在于，虽然各磁电阻传感单元感受的磁场不一样，但是由于各处的磁场大小均正比于线圈电流强度，因此，推臂和挽臂的总电阻也正比于电流强度，而由于推臂和挽臂所在区域内磁电阻传感单元在长条直导线上的分布完全相同，因此推臂和挽臂的总电阻变化完全相同，整个推挽式全桥磁电阻传感器的输出将正比于电流的幅度变化。
实施例五
图 9-10 为曲折平面线圈及磁电阻传感器的磁电阻传感单元串的分布特征，图 9 和 10 所分别对应的 60 和 70 结构图中， 61 和 71 为磁屏蔽层， 62 和 72 为曲折平面线圈，包括多个平行等距排列的长条直导线，所述长条直导线具有相同的长度和宽度，且相邻两长条直导线串联连接且具有相反的电流方向，图 10 中，推磁电阻传感单元串 63 和挽磁电阻传感单元串 65 交替位于所述相邻两个长条直导线上的正上方或者正下方，而后推磁电阻传感单元串和挽磁电阻传感单元串分别互联成推臂和挽臂，而后推臂和挽臂互联成推挽式桥式结构。图 10 中所对应的为参考桥式结构磁电阻传感器，其中，参考磁电阻传感单元串 73 和敏感磁电阻传感单元串 75 交替位于相邻两个长条直导线之间的中心位置，以及与该中心位置相邻的同为正向电流或者同为反向电流的长条的正上方或者正下方处。
实施例六
图 11 和图 12 为三维线圈及磁电阻传感单元串的分布结构图，其中 200 结构中，三维线圈包括的顶层线圈 201 和底层线圈 202 的电流方向如图所示，具有相反的电流方向， 203 为参考桥式磁电阻传感器，所述参考桥式磁电阻传感器的参考臂包含一个铁磁屏蔽层，具体为软磁通量屏蔽层。该三维线圈可以为螺线管线圈或称三维螺线圈。
图 12 的三维螺线圈包括两个反方向缠绕的螺线管 301 和 302 ，所述推磁电阻传感单元 303 和挽磁电阻传感单元 304 分别放置于螺线管 301 和 302 内，由于两者完全具有相反的磁场方向，因此构成了推挽式磁电阻传感电桥。
实施例七
图 13-16 分别为磁电阻继电器的四种工作模式，图 13 为单点工作模式， 仅当所述激励线圈正向电流大于Ion-off时，所述集成电路开关从关断态转变导通态，仅当所述激励线圈正向电流小于Ion-off时，所述集成电路开关从导通态转变成关断态。
图14为双极工作模式，仅当激励线圈正向电流大于Ion时，所述集成电路开关从关断态变成导通态，仅当激励线圈正向电流小于Ioff时，所述集成电路开关才会从导通态变成关断态。
图15为单极工作模式，只有当激励线圈从正向电流大于Ion时，所述集成电路开关从关断态变为导通态，所述激励电流必须从反方向大于Ioff时，所述集成电路开关才会导通态变成关断态。
图16为全极工作模式，当所述激励线圈电路从正向大于Ion1时，所述集成电路从关断态变成导通态，当所述激励线圈从正向小于Ioff1时，所述集成电路从导通态变成关断态，或者所述激励线圈电路从负向大于-Ion1时，所述集成电路从关断态变成导通态，所述激励线圈电路从负向小于-Ioff1时，所述集成电路从导通态变成关断态。
实施例八
图17为磁电阻继电器的信号处理图，其中图100为磁电阻传感器，在本例中为一个半桥磁电阻传感器，101为集成电路开关，102为外电路，磁电阻传感器100的输出信号经过低通滤波器103，除掉噪声，而后经过放大器104进行放大，并经过比较器105和参考电压进行比较之后，输出信号进入一个锁存，控制和驱动的电路106中，驱动107和108所构成的MOSFET管开关，其中107和108两个MOSFET管的栅极互联，107和源极和108的漏极互联，两个互联极接到106的输出端，而外电路102连接107的漏极和108的源极，工作时，通过磁电阻继电器的磁电阻传感器100输出的磁场响应信号经过滤波器103，放大器104和比价器105之后，转变成106的控制、锁存和驱动信号，控制两个MOSFET管107和108构成的开关的通断，从而使得外电路102能够进行开关操作。
以上对本发明的特定实施例结合图示进行了说明，很明显，在不离开本发明的范围和精神的基础上，可以对现有技术和方法进行很多修改。在本发明的所属技术领域中，只要掌握通常知识，就可以在本发明的技术要旨范围内，进行多种多样的变更。

Claims (17)

  1. 一种磁电阻继电器，其特征在于，包括衬底、位于衬底之上的磁场激励线圈、磁电阻传感器、集成电路开关、以及激励信号输入、输出电极，外电路输入、输出电极，电源输入电极和地电极，所述磁场激励线圈两端分别连接所述激励信号输入、输出电极，所述外电路输入、输出电极分别与所述集成电路开关相连，所述磁电阻传感器的电源输入端和地端分别和所述电源输入电极和所述地电极相连，所述集成电路开关的电源输入端和地端分别和所述电源输入电极和所述地电极相连，工作时，在所述磁场激励线圈中输入开或关控制信号，使之产生激励磁场作用于所述磁电阻传感器，所述集成电路开关接收所述磁电阻传感器的输出信号，从而实现对所述外电路的通或断操作。
  2. 根据权利要求1所述的一种磁电阻继电器，其特征在于，所述磁电阻传感器为TMR、GMR、或者AMR磁电阻传感器。
  3. 根据权利要求2所述的一种磁电阻继电器，其特征在于，所述磁电阻传感器为参考桥式磁电阻传感器或推挽桥式磁电阻传感器。
  4. 根据权利要求3所述的一种磁电阻继电器，其特征在于，所述参考桥式磁电阻传感器、所述推挽桥式磁电阻传感器为全桥、半桥或者准桥结构。
  5. 根据权利要求3所述的一种磁电阻继电器，其特征在于，所述磁场激励线圈为平面线圈或三维线圈。
  6. 根据权利要求5所述的一种磁电阻继电器，其特征在于，所述平面线圈为螺旋线圈，包括 具有相反电流方向的两个区域，且任一所述区域均包括 N 个平行排列的长条直导线，所述长条直导线具有相同的长度和宽度，且长条直导线间的间距相同，所述 N 为正整数。
  7. 根据权利要求 6 所述的一种磁电阻继电器，其特征在于，所述推挽式磁电阻传感器的推臂和挽臂分别位于所述螺旋线圈的两个所述区域内，所述推臂和挽臂均包括 M 个磁电阻传感单元串，所述任一磁电阻传感单元串均包括 K 个磁电阻传感单元， M*K 个所述磁电阻传感单元互联成两端口结构，所述磁电阻传感单元敏感轴垂直于所述区域的长条直导线，所述推臂的磁电阻传感单元在所对应的区域与 N 个所述平行排列的长条直导线的位置关系和所述挽臂的磁电阻传感单元在所对应的区域与 N 个所述平行排列的长条直导线位置关系相同，所述 M 、 K 均为正整数。
  8. 根据权利要求 6 所述的一种磁电阻继电器，其特征在于，所述参考桥式磁电阻传感器的参考臂和敏感臂均位于螺旋线圈的中心区域，所述中心区域没有导线，所述参考臂上方覆盖有一软磁通量屏蔽层。
  9. 根据权利要求 5 所述的一种磁电阻继电器，其特征在于，所述平面线圈包括交替排列的 N 条长条直导线 1 和长条直导线 2 ，所述长条直导线 1 和长条直导线 2 平行，且任意相邻的长条直导线之间具有相同间距，且相邻长条直导线 1 和长条直导线 2 在两端串联连接，所述长条直导线 1 和长条直导线 2 具有相同的尺寸，且具有相反的电流方向。
  10. 根据权利要求 9 所述的一种磁电阻继电器，其特征在于，所述推挽式磁电阻传感器包括推磁电阻传感单元串和挽磁电阻传感单元串，所述推磁电阻传感单元串和所述挽磁电阻传感单元串交替位于所述长条直导线 1 和所述长条直导线 2 的上方或者下方。
  11. 根据权利要求 9 所述的一种磁电阻继电器，其特征在于，所述参考桥式磁电阻传感器包括参考磁电阻传感单元串和敏感磁电阻传感单元串；所述参考磁电阻传感单元串位于所述相邻所述长条直导线 1 或者长条直导线 2 的中间位置的正上方或者正下方，所述敏感磁电阻传感单元串位于长条直导线 1 或者长条直导线 2 的正上方或者正下方。
  12. 根据权利要求 1-11 任一项所述的一种磁电阻继电器，其特征在于，还包括磁屏蔽层， 所述磁电阻传感器位于所述磁屏蔽层和所述磁场激励线圈之间 。
  13. 根据权利要求 5 所述的一种磁电阻继电器，其特征在于，所述三维线圈为螺线管线圈，所述参考桥式磁电阻传感器包括参考磁电阻传感单元串和敏感磁电阻传感单元串；所述参考磁电阻传感单元串和敏感磁电阻传感单元串分别位于所述螺线管轴心处。
  14. 根据权利要求 5 所述的一种磁电阻继电器，其特征在于，所述三维线圈为两个串联连接的螺线管线圈，且两个所述螺线管线圈具有相反的缠绕方向，所述推挽式磁电阻传感器包括推磁电阻传感单元串和挽磁电阻传感单元串，所述推磁电阻传感单元串和挽磁电阻传感单元串分别位于两个所述螺线管轴心处。
  15. 根据权利要求1所述的一种磁电阻继电器，其特征在于，
    所述磁电阻继电器的工作模式为 单点工作模式 ，则仅当所述激励线圈正向电流大于Ion-off时，所述集成电路开关从关断态转变导通态，仅当所述激励线圈正向电流小于Ion-off时，所述集成电路开关从导通态转变成关断态；
    或者所述磁电阻继电器的工作模式为双极工作模式，则仅当激励线圈正向电流大于Ion时，所述集成电路开关从关断态变成导通态，仅当激励线圈正向电流小于Ioff时，所述集成电路开关才会从导通态变成关断态；
    或者所述磁电阻继电器的工作模式为单极工作模式，则只有当激励线圈从正向电流大于Ion时，所述集成电路开关从关断态变为导通态，所述激励电流必须从反方向大于Ioff时，所述集成电路开关才会从导通态变成关断态；
    或者所述磁电阻继电器的工作模式为全极工作模式，则当所述激励线圈电路从正向大于Ion1时，所述集成电路开关从关断态变成导通态，当所述激励线圈从正向小于Ioff1时，所述集成电路开关从导通态变成关断态，或者所述激励线圈电路从负向大于-Ion1时，所述集成电路开关从关断态变成导通态，所述激励线圈电路从负向小于-Ioff1时，所述集成电路开关从导通态变成关断态。
  16. 根据权利要求1所述的一种磁电阻继电器，其特征在于，所述集成电路开关包括低通滤波器、放大器、比较器、驱动锁存控制电路，以及MOSFET管 , 所述低通滤波器连接所述磁电阻传感器输出信号，所述放大器连接所述低通滤波器，所述比较器连接所述放大器，所述比较器输出结果输送到所述驱动锁存控制电路，所述驱动锁存控制电路驱动所述MOSFET管的通断，所述MOSFET连接所述外电路。
  17. 根据权利要求16所述的一种磁电阻继电器，其特征在于，所述MOSFET管数量为两个，两个所述MOSFET管珊极互联，其中一个所述MOSFET管的源极和另一个所述MOSFET管的漏极互联，且所述两个互联栅极分别连接到所述驱动锁存控制电路上，所述两个MOSFET管剩下的源极和漏极两端连接所述外电路。
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