EP3492932B1 - Frequenzsensor - Google Patents

Frequenzsensor Download PDF

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Publication number
EP3492932B1
EP3492932B1 EP17204583.3A EP17204583A EP3492932B1 EP 3492932 B1 EP3492932 B1 EP 3492932B1 EP 17204583 A EP17204583 A EP 17204583A EP 3492932 B1 EP3492932 B1 EP 3492932B1
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EP
European Patent Office
Prior art keywords
magnetic
frequency
nano
oscillator
magnetoresistive
Prior art date
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Application number
EP17204583.3A
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English (en)
French (fr)
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EP3492932A1 (de
Inventor
Alex JENKINS
Ricardo Ferreira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INL International Iberian Nanotechnology Laboratory
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INL International Iberian Nanotechnology Laboratory
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to EP20184368.7A priority Critical patent/EP3757582B1/de
Application filed by INL International Iberian Nanotechnology Laboratory filed Critical INL International Iberian Nanotechnology Laboratory
Priority to EP17204583.3A priority patent/EP3492932B1/de
Priority to JP2020529465A priority patent/JP2021504963A/ja
Priority to KR1020207018457A priority patent/KR20200094180A/ko
Priority to CN201880077051.0A priority patent/CN111417858B/zh
Priority to PCT/EP2018/082768 priority patent/WO2019105964A1/en
Priority to US16/767,594 priority patent/US11385269B2/en
Publication of EP3492932A1 publication Critical patent/EP3492932A1/de
Application granted granted Critical
Publication of EP3492932B1 publication Critical patent/EP3492932B1/de
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
    • G01R23/06—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage by converting frequency into an amplitude of current or voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B28/00—Generation of oscillations by methods not covered by groups H03B5/00 - H03B27/00, including modification of the waveform to produce sinusoidal oscillations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity

Definitions

  • the coupling element may for example include means for running the incoming signal as a current through the magnetoresistive nano-oscillator, thereby coupling the current of the incoming signal to the magnetic mode of the magnetic free layer via various possible mechanisms (such as spin transfer torque or local magnetic fields associated with the electrical current).
  • the coupling element may also for example include means for running the incoming signal in a field line adjacent to the magnetoresistive nano-oscillator, such that the resulting magnetic field generated by the flowing current in the field line couples to the at least one magnetic mode.
  • the coupling arrangement may affect the resistive properties of the magnetoresistive oscillator with the help of the incoming signal, so that properties of the incoming signal may be determined by studying (e.g. by measuring) the behavior of the magnetoresistive nano-oscillator.
  • the magnetoresistive nano-oscillator is a magnetic tunnel junction (MTJ).
  • the MTJ is configurable in a state which has at least one magnetic vortex core.
  • the state containing the at least one magnetic vortex core may for example be a ground state of the magnetic free layer and the MTJ.
  • the radius of the trajectory in the gyrotropic mode may depend on the incoming frequency of a signal which is used to excite the magnetic vortex core via the coupling arrangement.
  • This oscillation may be sufficiently large (i.e. have a sufficiently large radius) for the magnetic vortex core to approach the perimeter of the magnetic free layer in the plane.
  • the magnetic vortex core may interact with the perimeter (or edge) and annihilate.
  • the magnetic vortex core may be expelled, and the magnetization of the magnetic free layer may return to a state which is essentially uniform. Due to the tunneling magnetoresistance effect, there may be an associated change of resistance across the MTJ between the uniform state and the vortex state. After a vortex core is expelled, a new vortex core may renucleate, and the resistance across the MTJ may oscillate. This oscillation may be reflected in the measured voltage across the MTJ.
  • the at least one magnetic mode may include an azimuthal spin wave mode and/or a radial breathing mode of the magnetic free layer.
  • the gyrotropic mode of the magnetic vortex core may be excited indirectly through the azimuthal spin wave mode and/or the radial breathing mode.
  • the frequency sensor may operate at higher frequencies. It may be envisaged to operate the frequency sensor at least up to 10 GHz or more.
  • the frequency sensor may no longer respond to the incoming signal current. Without the modulation, no rectified voltage may be available and the voltage measured across the MTJ may approach a lower value which may be zero in a deterministic way (i.e. with high or unit probability, corresponding to the second, deterministic region as referred to above). Between the first and second deterministic regions, the rectified voltage may be reduced as a function of increasing frequency in a probabilistic way. In this region (i.e. corresponding to the third, probabilistic region as referred to above), the calculated time average (rectified) voltage may change with a probability depending on the frequency of the incoming signal.
  • the method includes estimating the frequency of the incoming signal as a one-to-one function of the calculated time averaged voltage across the magnetoresitive nano-oscillator.
  • the at least one magnetic mode may include an azimuthal spin wave mode.
  • the gyrotropic mode of the magnetic vortex core may be excited indirectly through the azimuthal spin wave mode.
  • the at least one magnetic mode may include also, or instead, a radial breathing mode.
  • the gyrotropic mode of the magnetic vortex core may be excited indirectly through the radial breathing mode.
  • the magnetization may be uniform (or at least quasi-uniform) and, provided that the magnetization 232 of the reference layer 222 is configured accordingly, either be parallel (align) with the magnetization 232 of the reference layer 222 or be antiparallel (anti-align) with the magnetization 232 of the reference layer 222. If the alignment is parallel, the probability of electrons tunneling across the MTJ 210' may be high. If the alignment is antiparallel, the probability of electrons tunneling across the MTJ 210' may be low. In either case, the tunneling magnetoresistance effect may cause an associated change of resistance across the MTJ between the (quasi-) uniform state and the state still having the vortex. As mentioned earlier herein, this change of resistance may form the basis of a threshold frequency detector.
  • a frequency sensor (such as the frequency sensor 100 described with reference to Figures 1a-1c and including the MTJ 210 described with reference to Figures 2a and 2b ) according to the present disclosure takes also the probabilistic nature of such annihilation or remaining of the vortex core 261 into account, by performing the plurality of voltage measurements across the magnetoresistive nano-oscillator 110, 210 over time and by determining the frequency of the incoming signal based on a calculated time averaged voltage.
  • Figure 3a illustrates simulated data on the fluctuating magnetization in the y-direction in the free layer 220 over time.
  • Figure 3a illustrates such data as a function of time for three different frequencies of the incoming signal, namely when the frequency of the incoming signal is 195 MHz (top plot), 260 MHz (middle plot) and 330 MHz (bottom plot) respectively.
  • a region A may be defined in which the vortex core has a large probability of being expelled by coming close enough to the perimeter 221 of the free layer 220.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Hall/Mr Elements (AREA)

Claims (7)

  1. Frequenzsensor (100), umfassend:
    einen magnetoresistiven Nanooszillator (110, 210) mit einer magnetischen Heterostruktur aus mindestens einer magnetfreien Schicht (120, 220), einer magnetischen Referenzschicht (122, 222) und einer nichtmagnetischen Zwischenschicht (124, 224), die zwischen der magnetfreien Schicht (120, 220) und der magnetischen Referenzschicht (122, 222) angeordnet ist, wobei der magnetoresistive Nanooszillator (110, 210) ein magnetischer Tunnelübergang, MTJ (engl. magnetic tunnel junction), ist, wobei die magnetfreie Schicht (120, 220) in einem Zustand mit mindestens einem magnetischen Vortex-Kern konfigurierbar ist;
    eine Kopplungsanordnung (140), die angeordnet ist, um ein Eingangssignal mit mindestens einem magnetischen Modus der magnetfreien Schicht (120, 220) zu koppeln, wobei der mindestens eine magnetische Modus einen gyrotropischen Modus des magnetischen Vortex-Kerns und
    einen Frequenzschätzer (150) beinhaltet; dadurch gekennzeichnet, dass
    der Frequenzschätzer konfiguriert ist zum:
    Durchführen mehrerer Spannungsmessungen über den magnetoresistiven Nanooszillator (110, 210) über ein Zeitintervall, das sich über mehrere Schwingungen des mindestens einen magnetischen Vortex-Kerns erstreckt;
    Berechnen einer zeitlichen Durchschnittsspannung über den magnetoresistiven Nanooszillator (110, 210) anhand der mehreren Spannungsmessungen;
    Schätzen einer Frequenz des Eingangssignals über einen endlichen Frequenzbereich als Eins-zu-Eins-Funktion der berechneten zeitlichen Durchschnittsspannung, und
    Ausgeben eines Signals, das für die geschätzte Frequenz repräsentativ ist;
    und dass die Kopplungsanordnung (140) mindestens eine Feldlinie (142) neben dem MTJ umfasst, um das Eingangssignal als Strom durchzuleiten, um ein Magnetfeld zu erzeugen, wobei das Magnetfeld verwendet werden kann, um den mindestens einen gyrotropischen Modus des magnetischen Vortex-Kerns unter Verwendung des Eingangssignals anzuregen, oder mindestens einen Leiter, um das Eingangssignal als Strom durch den MTJ zu leiten.
  2. Frequenzsensor (100) nach Anspruch 1, wobei der mindestens eine magnetische Modus einen azimutalen Spinwellenmodus beinhaltet, und wobei der gyrotropische Modus des magnetischen Vortex-Kerns indirekt durch den azimutalen Spinwellenmodus angeregt wird.
  3. Frequenzsensor (100) nach einem der vorhergehenden Ansprüche, wobei der Frequenzschätzer (150) so konfiguriert ist, dass er eine erforderliche Länge des Zeitintervalls anhand einer gewünschten Auflösung der bestimmten Frequenz des Eingangssignals bestimmt.
  4. Frequenzsensor (100) nach einem der vorhergehenden Ansprüche, wobei der Frequenzschätzer (150) so konfiguriert ist, dass er die Spannung über dem magnetoresistiven Nanooszillator (110, 210) als gleichgerichtete Spannung misst.
  5. Frequenzsensor (100) nach einem der vorhergehenden Ansprüche, ferner umfassend einer Vorspannungsanordnung zum Bereitstellen eines vorspannenden Gleichstroms durch den magnetoresistiven Nanooszillator (110, 210).
  6. Frequenzsensor (100) nach einem der vorhergehenden Ansprüche, wobei der magnetoresistive Nanooszillator (110, 210) in Form einer Nanosäule vorgesehen ist.
  7. Verfahren zum Schätzen einer Frequenz eines Eingangssignals, umfassend:
    Koppeln des Eingangssignals mit mindestens einem magnetischen Modus einer freien magnetischen Schicht, wobei die freie magnetische Schicht Teil eines magnetoresistiven Nanooszillators (110, 210) mit einer magnetischen Heterostruktur aus mindestens der magnetfreien Schicht (120, 220), einer magnetischen Referenzschicht (122, 222) und einer nichtmagnetischen Zwischenschicht (124, 224) ist, die zwischen der magnetfreien Schicht (120, 220) und der magnetischen Referenzschicht (122, 222) angeordnet ist, wobei der magnetoresistive Nanooszillator (110, 210) ein magnetischer Tunnelübergang, MTJ (engl. magnetic tunnel junction), ist;
    Konfigurieren der magnetfreien Schicht (120, 220) in einem Zustand mit mindestens einem magnetischen Vortex-Kern, so dass der mindestens eine magnetische Modus einen gyrotropischen Modus des magnetischen Vortex-Kerns umfasst;
    Durchleiten des Eingangssignals als ein Strom durch mindestens eine Feldlinie (142) neben dem MTJ, um ein Magnetfeld zu erzeugen, oder als ein Strom durch den MTJ, wodurch das Eingangssignal mit dem mindestens einen magnetischen Modus gekoppelt wird; dadurch gekennzeichnet, dass das Verfahren ferner umfasst:
    Durchführen mehrerer Spannungsmessungen über den magnetoresistiven Nanooszillator (110, 210) über ein Zeitintervall, das sich über mehrere Schwingungen des mindestens einen magnetischen Vortex-Kerns erstreckt; Berechnen, basierend auf den mehreren Spannungsmessungen, einer zeitlichen Durchschnittsspannung über den magnetoresistiven Nanooszillator (110, 210), und
    Schätzen einer Frequenz des Eingangssignals über einen endlichen Frequenzbereich als Eins-zu-Eins-Funktion der berechneten zeitlichen Durchschnittsspannung.
EP17204583.3A 2017-11-30 2017-11-30 Frequenzsensor Active EP3492932B1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP17204583.3A EP3492932B1 (de) 2017-11-30 2017-11-30 Frequenzsensor
EP20184368.7A EP3757582B1 (de) 2017-11-30 2017-11-30 Frequenzsensor und methode zur frequenzschätzung
KR1020207018457A KR20200094180A (ko) 2017-11-30 2018-11-28 주파수 센서
CN201880077051.0A CN111417858B (zh) 2017-11-30 2018-11-28 频率传感器
JP2020529465A JP2021504963A (ja) 2017-11-30 2018-11-28 周波数センサ
PCT/EP2018/082768 WO2019105964A1 (en) 2017-11-30 2018-11-28 Frequency sensor
US16/767,594 US11385269B2 (en) 2017-11-30 2018-11-28 Frequency sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP17204583.3A EP3492932B1 (de) 2017-11-30 2017-11-30 Frequenzsensor

Related Child Applications (1)

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EP20184368.7A Division EP3757582B1 (de) 2017-11-30 2017-11-30 Frequenzsensor und methode zur frequenzschätzung

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EP3492932B1 true EP3492932B1 (de) 2020-07-08

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EP20184368.7A Not-in-force EP3757582B1 (de) 2017-11-30 2017-11-30 Frequenzsensor und methode zur frequenzschätzung

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US (1) US11385269B2 (de)
EP (2) EP3492932B1 (de)
JP (1) JP2021504963A (de)
KR (1) KR20200094180A (de)
CN (1) CN111417858B (de)
WO (1) WO2019105964A1 (de)

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Publication number Priority date Publication date Assignee Title
EP4143518A1 (de) * 2020-04-27 2023-03-08 International Iberian Nanotechnology Laboratory (INL) Verfahren und system zur nichtinvasiven vibrationsbasierten zustandsüberwachung einer maschine
CN113036033A (zh) * 2021-03-03 2021-06-25 兰州大学 一种基于磁性隧道结的微波探测元件
RU2762383C1 (ru) * 2021-07-01 2021-12-20 Общество с ограниченной ответственностью «Новые спинтронные технологии» (ООО «НСТ») Выпрямитель переменного тока с неколлинеарной намагниченностью
RU2762381C1 (ru) * 2021-07-01 2021-12-20 Общество с ограниченной ответственностью «Новые спинтронные технологии» (ООО «НСТ») Выпрямитель переменного тока на базе неоднородной гетероструктуры
US20250160219A1 (en) * 2023-11-09 2025-05-15 Infineon Technologies Ag Pad over active sensor cells integrated in a chip package

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3307730B2 (ja) * 1993-08-30 2002-07-24 浜松ホトニクス株式会社 光学測定装置
GB0126014D0 (en) * 2001-10-30 2001-12-19 Sensopad Technologies Ltd Modulated field position sensor
TWI365989B (en) * 2003-12-23 2012-06-11 Eliposki Remote Ltd L L C Semiconductor device and method for manufacturing the same
US7271011B2 (en) * 2005-10-28 2007-09-18 Freescale Semiconductor, Inc. Methods of implementing magnetic tunnel junction current sensors
US8416539B2 (en) * 2008-08-07 2013-04-09 HGST Netherlands B.V. Magnetic field sensing system using spin-torque diode effect
FR2944910B1 (fr) * 2009-04-23 2011-07-15 Commissariat Energie Atomique Dispositif de memorisation magnetique a vortex
CN102043089A (zh) * 2010-10-26 2011-05-04 江苏多维科技有限公司 隔离式电压传感器
CN102280574B (zh) * 2011-01-07 2014-04-16 江苏多维科技有限公司 薄膜磁电阻传感元件、多个传感元件的组合及与该组合耦合的电子装置
FR2977999B1 (fr) * 2011-07-12 2013-08-23 Thales Sa Oscillateur spintronique et utilisation de celui-ci dans des dispositifs radiofrequence
KR101470907B1 (ko) * 2013-05-20 2014-12-09 한국과학기술원 Mtj 접합층을 이용한 스핀토크오실레이터
CN106463610B (zh) * 2014-06-18 2020-07-03 英特尔公司 具有可调强度的耦合自旋霍尔纳米振荡器
DE102015121753B4 (de) * 2015-12-14 2021-10-21 Infineon Technologies Ag Magnetsensorbauelement und Verfahren für ein Magnetsensorbauelement mit einer magnetoresistiven Struktur
US9541605B1 (en) * 2015-12-15 2017-01-10 International Business Machines Corporation Magnetic tunnel junction loaded ring oscillators for MRAM characterization

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

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Publication number Publication date
CN111417858A (zh) 2020-07-14
WO2019105964A1 (en) 2019-06-06
KR20200094180A (ko) 2020-08-06
EP3757582A1 (de) 2020-12-30
EP3757582B1 (de) 2021-11-10
CN111417858B (zh) 2022-07-01
EP3492932A1 (de) 2019-06-05
US20200326361A1 (en) 2020-10-15
US11385269B2 (en) 2022-07-12
JP2021504963A (ja) 2021-02-15

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