EP3523825A4 - 3d-halbleiterbauelement und struktur damit - Google Patents

3d-halbleiterbauelement und struktur damit Download PDF

Info

Publication number
EP3523825A4
EP3523825A4 EP17859869.4A EP17859869A EP3523825A4 EP 3523825 A4 EP3523825 A4 EP 3523825A4 EP 17859869 A EP17859869 A EP 17859869A EP 3523825 A4 EP3523825 A4 EP 3523825A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17859869.4A
Other languages
English (en)
French (fr)
Other versions
EP3523825A2 (de
Inventor
Zvi Or-Bach
Jin-Woo Han
Brian Cronquist
Eli Lusky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monolithic 3D Inc
Original Assignee
Monolithic 3D Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monolithic 3D Inc filed Critical Monolithic 3D Inc
Publication of EP3523825A2 publication Critical patent/EP3523825A2/de
Publication of EP3523825A4 publication Critical patent/EP3523825A4/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
EP17859869.4A 2016-10-10 2017-09-19 3d-halbleiterbauelement und struktur damit Pending EP3523825A4 (de)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US201662406376P 2016-10-10 2016-10-10
US201662432575P 2016-12-11 2016-12-11
US201662440720P 2016-12-30 2016-12-30
US201762457838P 2017-02-11 2017-02-11
US201762460989P 2017-02-20 2017-02-20
US201762471963P 2017-03-16 2017-03-16
US201762480529P 2017-04-02 2017-04-02
US201762484398P 2017-04-12 2017-04-12
US201762488821P 2017-04-23 2017-04-23
US201762517152P 2017-06-08 2017-06-08
US201762530173P 2017-07-08 2017-07-08
US201762535265P 2017-07-21 2017-07-21
US201762549952P 2017-08-24 2017-08-24
PCT/US2017/052359 WO2018071143A2 (en) 2016-10-10 2017-09-19 3d semiconductor device and structure

Publications (2)

Publication Number Publication Date
EP3523825A2 EP3523825A2 (de) 2019-08-14
EP3523825A4 true EP3523825A4 (de) 2020-09-09

Family

ID=61905833

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17859869.4A Pending EP3523825A4 (de) 2016-10-10 2017-09-19 3d-halbleiterbauelement und struktur damit

Country Status (3)

Country Link
EP (1) EP3523825A4 (de)
CN (1) CN109952643B (de)
WO (1) WO2018071143A2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019060798A1 (en) * 2017-09-24 2019-03-28 Monolithic 3D Inc. 3D SEMICONDUCTOR DEVICE, STRUCTURE AND METHODS
US10839872B2 (en) * 2018-07-03 2020-11-17 Ememory Technology Inc. Random bit cell using an initial state of a latch to generate a random bit
US10847236B2 (en) * 2018-10-17 2020-11-24 Ememory Technology Inc. Memory cell with a sensing control circuit
KR102683652B1 (ko) * 2018-11-09 2024-07-11 에스케이하이닉스 주식회사 수직형 메모리 장치 및 그 제조 방법
US10861722B2 (en) * 2018-11-13 2020-12-08 Applied Materials, Inc. Integrated semiconductor processing
US10741535B1 (en) 2019-02-14 2020-08-11 Sandisk Technologies Llc Bonded assembly containing multiple memory dies sharing peripheral circuitry on a support die and methods for making the same
WO2020172799A1 (en) 2019-02-26 2020-09-03 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device and method for forming the same
JP7328344B2 (ja) * 2019-04-30 2023-08-16 長江存儲科技有限責任公司 三次元メモリデバイス
CN110530969B (zh) * 2019-08-14 2021-05-25 江苏大学 一种基于掺杂金属原子的石墨烯谐振式气体传感器的制备工艺
CN113451269B (zh) 2020-03-25 2022-07-22 长鑫存储技术有限公司 字线结构和半导体存储器
US11856781B2 (en) * 2020-07-22 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
US11704271B2 (en) * 2020-08-20 2023-07-18 Alibaba Group Holding Limited Scalable system-in-package architectures
US11232824B1 (en) 2020-12-11 2022-01-25 International Business Machines Corporation Non-volatile analog resistive memory cells implementing ferroelectric select transistors
CN112687522B (zh) * 2020-12-24 2024-08-30 上海集成电路研发中心有限公司 一种非晶锗硅薄膜结构、集成结构以及制造方法
US11545220B2 (en) * 2020-12-29 2023-01-03 Micron Technology, Inc. Split-gate memory cells
EP4024222A1 (de) 2021-01-04 2022-07-06 Imec VZW Integrierte schaltung mit 3d-partitionierung
CN112768366B (zh) * 2021-01-22 2024-02-23 长江存储科技有限责任公司 半导体结构及其制备方法
KR20220150552A (ko) * 2021-05-04 2022-11-11 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
CN113782461B (zh) * 2021-08-20 2024-04-09 长江存储科技有限责任公司 半导体结构的测试方法以及测试样品
JP2023041280A (ja) * 2021-09-13 2023-03-24 キオクシア株式会社 記憶装置
KR20230085675A (ko) * 2021-12-07 2023-06-14 삼성전자주식회사 반도체 메모리 장치 및 이의 제조 방법
US12150310B2 (en) 2022-08-16 2024-11-19 International Business Machines Corporation Ferroelectric random-access memory cell
WO2025050067A1 (en) * 2023-08-31 2025-03-06 Strong Force Vcn Portfolio 2019, Llc Systems, methods, kits, and apparatuses for specialized chips for robotic intelligence layers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120182801A1 (en) * 2011-01-19 2012-07-19 Macronix International Co., Ltd. Memory Architecture of 3D NOR Array
US20150340366A1 (en) * 2014-05-21 2015-11-26 Joon-Sung LIM Semiconductor devices including a peripheral circuit region and first and second memory regions, and related programming methods

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7291878B2 (en) * 2003-06-03 2007-11-06 Hitachi Global Storage Technologies Netherlands B.V. Ultra low-cost solid-state memory
DE102007008530B4 (de) * 2007-02-21 2015-11-12 Infineon Technologies Ag Verfahren zum Herstellen einer nichtflüchtigen Speichervorrichtung, nichtflüchtige Speichervorrichtung, Speicherkarte mit einer nichtflüchtigen Speichervorrichtung und elektrisches Gerät mit einer Speicherkarte
US7897431B2 (en) * 2008-02-01 2011-03-01 Promos Technologies, Inc. Stacked semiconductor device and method
US7983065B2 (en) * 2009-04-08 2011-07-19 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
US8754533B2 (en) * 2009-04-14 2014-06-17 Monolithic 3D Inc. Monolithic three-dimensional semiconductor device and structure
US8581349B1 (en) * 2011-05-02 2013-11-12 Monolithic 3D Inc. 3D memory semiconductor device and structure
WO2012015550A2 (en) * 2010-07-30 2012-02-02 Monolithic 3D, Inc. Semiconductor device and structure
US8724393B2 (en) * 2011-05-02 2014-05-13 Macronix International Co., Ltd. Thermally assisted flash memory with diode strapping
US8574929B1 (en) * 2012-11-16 2013-11-05 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US9691760B2 (en) * 2013-03-12 2017-06-27 Monolithic 3D Inc Semiconductor device and structure
US9023688B1 (en) * 2013-06-09 2015-05-05 Monolithic 3D Inc. Method of processing a semiconductor device
US9099538B2 (en) * 2013-09-17 2015-08-04 Macronix International Co., Ltd. Conductor with a plurality of vertical extensions for a 3D device
US9568940B2 (en) * 2013-12-05 2017-02-14 International Business Machines Corporation Multiple active vertically aligned cores for three-dimensional chip stack
KR102275540B1 (ko) * 2014-12-18 2021-07-13 삼성전자주식회사 가변 저항 메모리 소자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120182801A1 (en) * 2011-01-19 2012-07-19 Macronix International Co., Ltd. Memory Architecture of 3D NOR Array
US20150340366A1 (en) * 2014-05-21 2015-11-26 Joon-Sung LIM Semiconductor devices including a peripheral circuit region and first and second memory regions, and related programming methods

Also Published As

Publication number Publication date
CN109952643A (zh) 2019-06-28
CN109952643B (zh) 2024-05-31
WO2018071143A3 (en) 2018-07-26
WO2018071143A2 (en) 2018-04-19
EP3523825A2 (de) 2019-08-14

Similar Documents

Publication Publication Date Title
EP3523825A4 (de) 3d-halbleiterbauelement und struktur damit
DE112016004248A5 (de) Optoelektronisches Halbleiterbauteil und 3D-Drucker damit
EP3547376A4 (de) Halbleiterbauelement und anzeigevorrichtung damit
EP3400620A4 (de) Anzeigevorrichtung und halbleiterbauelement damit
EP3542394C0 (de) Mikrotransferdruckbare flip-chip-strukturen und herstellungsverfahren dafür
EP3475033C0 (de) Exoskelett und statthalter
TWI563546B (en) Semiconductor device and methods of forming the same
HUE062189T2 (hu) Aktivin-ACTRII-antagonisták és alkalmazások mielodiszpláziás szindróma kezelésére
EP3544123C0 (de) Käfigartige hyperbelförmige federstruktur und buchse
SG10201913445WA (en) Assembly and semiconductor device
DE112015002479A5 (de) Halbleiterbauelement und Beleuchtungsvorrichtung
EP3561886A4 (de) Halbleiterbauelement
DE112017003995T8 (de) Luftpumpenvorrichtung und sitzvorrichtung
JP2016027652A5 (ja) 半導体装置、及び電子機器
EP3576166A4 (de) Halbleiterbauelement
EP3438399C0 (de) Glasscheibeneinheitherstellungsverfahren und beschlagherstellungsverfahren
EP3536525A4 (de) Stabilisatorverbindung und stabilisator mit stabilisatorverbindung
EP3438729C0 (de) Brillenglas und brille
EP3608972A4 (de) Halbleiterbauelement
EP3537486A4 (de) Halbleiterbauelement und halbleiterbauelementgehäuse damit
EP3560985A4 (de) Struktur und herstellungsverfahren dafür
EP3564313A4 (de) Wärmeleitende harzzusammensetzung und komplex damit
EP3545000A4 (de) Anti-cd300f-antikörper und verwendungen davon
EP3549560A4 (de) Kernträger und damit ausgestattete kleidung
EP3487806A4 (de) Multisiliciumatomquantenpunkt und vorrichtungen damit

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20190508

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20200812

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 27/11 20060101ALI20200806BHEP

Ipc: H01L 21/8238 20060101ALI20200806BHEP

Ipc: H01L 27/108 20060101ALI20200806BHEP

Ipc: H01L 27/06 20060101AFI20200806BHEP

Ipc: H01L 27/11551 20170101ALI20200806BHEP