EP3686940A4 - Procédé et système de fabrication de feuilles de cellules solaires en bardeaux et d'ensembles photovoltaïques en bardeaux - Google Patents

Procédé et système de fabrication de feuilles de cellules solaires en bardeaux et d'ensembles photovoltaïques en bardeaux Download PDF

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Publication number
EP3686940A4
EP3686940A4 EP18899028.7A EP18899028A EP3686940A4 EP 3686940 A4 EP3686940 A4 EP 3686940A4 EP 18899028 A EP18899028 A EP 18899028A EP 3686940 A4 EP3686940 A4 EP 3686940A4
Authority
EP
European Patent Office
Prior art keywords
shingle
shaped
producing
solar cell
cell panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18899028.7A
Other languages
German (de)
English (en)
Other versions
EP3686940A1 (fr
Inventor
Jun Sun
Bingwei YIN
Shiyin DING
Fushen ZHOU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tongwei Solar Hefei Co Ltd
Original Assignee
Chengdu Yefan Science and Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201811410350.XA external-priority patent/CN111223958B/zh
Application filed by Chengdu Yefan Science and Technology Co Ltd filed Critical Chengdu Yefan Science and Technology Co Ltd
Publication of EP3686940A4 publication Critical patent/EP3686940A4/fr
Publication of EP3686940A1 publication Critical patent/EP3686940A1/fr
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0611—Sorting devices
EP18899028.7A 2018-11-23 2018-12-06 Procédé et système de fabrication de feuilles de cellules solaires en bardeaux et d'ensembles photovoltaïques en bardeaux Pending EP3686940A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811410350.XA CN111223958B (zh) 2018-11-23 2018-11-23 叠瓦电池片和叠瓦光伏组件的制造方法和系统
PCT/CN2018/119526 WO2020103197A1 (fr) 2018-11-23 2018-12-06 Procédé et système de fabrication de feuilles de cellules solaires en bardeaux et d'ensembles photovoltaïques en bardeaux

Publications (2)

Publication Number Publication Date
EP3686940A4 true EP3686940A4 (fr) 2020-07-29
EP3686940A1 EP3686940A1 (fr) 2020-07-29

Family

ID=70804439

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18899028.7A Pending EP3686940A1 (fr) 2018-11-23 2018-12-06 Procédé et système de fabrication de feuilles de cellules solaires en bardeaux et d'ensembles photovoltaïques en bardeaux

Country Status (4)

Country Link
EP (1) EP3686940A1 (fr)
JP (1) JP6985393B2 (fr)
KR (2) KR102425420B1 (fr)
WO (1) WO2020103197A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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CN114942635B (zh) * 2022-04-30 2024-12-24 苏州瑞得恩光能科技有限公司 一种机器人及其直线行进控制方法、数据处理设备
KR20240003378A (ko) 2022-06-30 2024-01-09 한국전자기술연구원 슁글드 태양광 모듈 제조장치
TWI863248B (zh) * 2023-05-03 2024-11-21 真環科技股份有限公司 太陽能模組及其製造方法與拆解方法
CN116314382B (zh) * 2023-05-16 2023-09-08 天合光能股份有限公司 太阳能电池及其制作方法、光伏组件及光伏系统
CN116944724A (zh) * 2023-08-09 2023-10-27 晶科能源股份有限公司 电池串的焊接方法以及串焊机

Citations (6)

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EP0111394A2 (fr) * 1982-11-09 1984-06-20 Energy Conversion Devices, Inc. Bande stratifiée de cellules solaires de grande surface et méthode de production de cette bande stratifiée
WO2010135321A2 (fr) * 2009-05-19 2010-11-25 Applied Materials, Inc. Procédé et appareil pour le contrôle de ligne de production de piles solaires et analyse de processus
WO2015183827A2 (fr) * 2014-05-27 2015-12-03 Cogenra Solar, Inc. Module à cellules solaires en chevauchement
CN104201240B (zh) * 2014-08-29 2016-08-17 四川钟顺太阳能开发有限公司 一种太阳电池的生产工艺及其采用该工艺生产的太阳电池
CN106409946A (zh) * 2016-09-27 2017-02-15 中国电子科技集团公司第四十八研究所 晶硅电池片及其制备方法
WO2018023103A1 (fr) * 2016-07-29 2018-02-01 Sunpower Corporation Cellules solaires imbriquées se chevauchant le long de bords non linéaires

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KR101863068B1 (ko) * 2011-12-01 2018-06-01 주성엔지니어링(주) 태양전지 및 그 제조방법
US20130298973A1 (en) * 2012-05-14 2013-11-14 Silevo, Inc. Tunneling-junction solar cell with shallow counter doping layer in the substrate
JP2014220346A (ja) * 2013-05-07 2014-11-20 株式会社村田製作所 太陽電池セルおよびその製造方法
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CN108574025B (zh) * 2018-05-21 2020-04-24 保定易通光伏科技股份有限公司 叠瓦组件的制作方法
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Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111394A2 (fr) * 1982-11-09 1984-06-20 Energy Conversion Devices, Inc. Bande stratifiée de cellules solaires de grande surface et méthode de production de cette bande stratifiée
WO2010135321A2 (fr) * 2009-05-19 2010-11-25 Applied Materials, Inc. Procédé et appareil pour le contrôle de ligne de production de piles solaires et analyse de processus
WO2015183827A2 (fr) * 2014-05-27 2015-12-03 Cogenra Solar, Inc. Module à cellules solaires en chevauchement
CN104201240B (zh) * 2014-08-29 2016-08-17 四川钟顺太阳能开发有限公司 一种太阳电池的生产工艺及其采用该工艺生产的太阳电池
WO2018023103A1 (fr) * 2016-07-29 2018-02-01 Sunpower Corporation Cellules solaires imbriquées se chevauchant le long de bords non linéaires
CN106409946A (zh) * 2016-09-27 2017-02-15 中国电子科技集团公司第四十八研究所 晶硅电池片及其制备方法

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Title
See also references of WO2020103197A1 *

Also Published As

Publication number Publication date
WO2020103197A1 (fr) 2020-05-28
KR20200064028A (ko) 2020-06-05
KR102425420B1 (ko) 2022-07-27
JP2021501548A (ja) 2021-01-14
JP6985393B2 (ja) 2021-12-22
KR20210082389A (ko) 2021-07-05
EP3686940A1 (fr) 2020-07-29

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