EP3847293A2 - Procédé de réglage ou de fonctionnement d'un réacteur de cvd - Google Patents

Procédé de réglage ou de fonctionnement d'un réacteur de cvd

Info

Publication number
EP3847293A2
EP3847293A2 EP19765977.4A EP19765977A EP3847293A2 EP 3847293 A2 EP3847293 A2 EP 3847293A2 EP 19765977 A EP19765977 A EP 19765977A EP 3847293 A2 EP3847293 A2 EP 3847293A2
Authority
EP
European Patent Office
Prior art keywords
process chamber
chamber ceiling
center
temperature
ceiling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19765977.4A
Other languages
German (de)
English (en)
Inventor
Peter Sebald Lauffer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of EP3847293A2 publication Critical patent/EP3847293A2/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the invention relates to a method for setting up or operating a CVD reactor, with which one or more layers can be deposited on one or more substrates, a susceptor being heated by means of a heating device, heat from the susceptor coming through a process - is always transported to a process chamber ceiling, through the process chamber ceiling and from the process chamber ceiling through a gap space to a heat dissipation body.
  • the invention also relates to a device for performing the method.
  • DE 10 2010 000 554 A1 describes a MOCVD reactor with a reactor housing in which a susceptor is arranged, which can be heated from below with a heating device. Substrates which are coated by introducing process gases into the process chamber can be placed on a broad side surface of the susceptor facing a process chamber. The top of the process chamber is limited by a process chamber ceiling. Above the process chamber ceiling is a heat dissipation body with temperature control channels for dissipating the heat, which is transferred from the susceptor through the process chamber to the process chamber ceiling. To set the temperature profile of the process chamber ceiling, heat conducting bodies are used which have a non-flat surface facing the process chamber ceiling. With these measures, the radial temperature profile is set within a process chamber. [0004] CVD reactors with susceptors heated from below and cooled process chamber ceilings are also known from DE 10 2007009 145 Al and DE 10 2014 106 871 Al.
  • the temperature of the process chamber ceiling is usually only determined at one point, despite measures to homogenize it. This is chosen arbitrarily, so that at this point an arbitrary temperature is measured which deviates from an exact mean temperature.
  • the average temperature is required to determine the real energy flow through the reactor from the susceptor to the heat sink.
  • the heat flow can be varied by varying the thermal conductivity of a purge gas into the gap space between the process chamber ceiling and the heat sink.
  • the purge gas consists of a mixture of at least two gases, which differ greatly in terms of their thermal conductivity, so that depending on the mixing ratio of the two gases, either a highly thermally conductive purge gas or a weakly thermally conductive purge gas through the gap space between the process chamber ceiling and the heat sink flows through or is present there.
  • gap height is understood to mean the distance between the underside of the heat dissipation body facing the process chamber ceiling and the top of the process chamber ceiling facing the heat dissipation body.
  • gap height is understood to mean the distance between the underside of the heat dissipation body facing the process chamber ceiling and the top of the process chamber ceiling facing the heat dissipation body.
  • the local variation of the gap height translates into a deviation of the mean surface temperature of the process chamber ceiling from Setpoint. If process chamber ceilings (maintenance) and / or heat dissipation bodies (system) are exchanged, new tolerances or delays result and thus other local variations in the gap height and thus other deviations in the mean surface temperature from the target value.
  • the prior art also includes DE 10247 921 A1, DE 10 2017 105 333 A1, DE 696 20 590 T2,
  • the object of the invention is to remedy the disadvantages of the prior art described and, in particular, to provide means to determine the process chamber ceiling temperature more meaningfully and thus to be able to provide more precise information about the energy balance of the CVD reactor.
  • the object is achieved by the invention specified in the claims, the sub-claims not only representing advantageous developments of the subordinate claims, but also independent solutions to the task.
  • a method for setting up or operating a CVD reactor and a device to be used for this purpose are proposed.
  • the CVD reactor is operated without substrates or only with test substrates when setting up and the CVD reactor is operated with substrates during operation.
  • heating energy is generated by the heating device, which is supplied in particular as heat to the susceptor.
  • a temperature of the process chamber ceiling is measured at at least two different azimuthal angular positions with respect to a center of the process chamber and at the same radial distance from the center of the process chamber.
  • the heat can be generated as heat radiation from an IR heater.
  • the heat can also be transported inductively from the heating device to the susceptor, at least some of the heat being transported from the susceptor through the process chamber and the process chamber ceiling to the heat dissipation body, where it is removed, for example, by means of a coolant.
  • the heat flow through the gap spacing can be regulated in particular by means of a suitable purge gas composition.
  • the purging gas consists, for example, of a mixture of hydrogen and nitrogen or two other gases which differ greatly in terms of their thermal conductivity, so that the composition of the purging gas mixture in the gap clearance space allows the heat to be set in the gap clearance space.
  • a gas supply line is provided, by means of which the purging gas mixture is fed into the gap space between the heat dissipation body and the process chamber ceiling which forms a purging gas channel.
  • the gap height is at least a factor of 100, preferably a factor of 200, smaller than a characteristic lateral extension length of the process chamber ceiling, for example a diameter of the process chamber ceiling.
  • the distance between the process chamber ceiling and the heat sink is in the range of 0.5 to 3 mm.
  • the device has at least two measuring devices, each arranged at different azimuthal angular positions around a center of the process chamber, which in the are arranged at the same radial distance from the process chamber, so that at least two temperatures are measured at the same radial distance from the center, but at two different angular positions.
  • a first temperature is thus measured at a first measuring point and a second temperature at a second measuring point, the measuring points being at the same radial distance with respect to a center point of the process chamber, but being arranged at a first and a second angular position relative to the center point.
  • the process chamber and in particular the process chamber ceiling has a circular floor plan.
  • the temperature measurement devices are preferably arranged at the rear of the process chamber ceiling, so that the measured temperatures are surface temperatures.
  • these are surface temperatures of zones of the broad side surface of the process chamber ceiling facing the heat dissipation body.
  • the zones can be spaced from the edge, adjacent to the edge or directly on the edge. These zones are preferably adjacent to the edge in such a way that their distance from the radially outer edge of the circular process chamber ceiling, for example, is less than their distance from the center of the process chamber ceiling.
  • the zones can, however, also lie in an area which is spaced apart from the center to the same extent as the substrates lying on the susceptor.
  • the at least two temperature measuring devices are pyrometers.
  • the pyrometers can be arranged outside the reactor housing.
  • the reactor housing cover which can also be formed by the heat dissipation body, has a channel through which the optical beam path of the pyrometer passes, with which the surface temperature of the back of the process chamber ceiling is measured at the measuring zones.
  • An average can be obtained from the at least two temperatures be formed.
  • a difference value can be formed from the at least two temperatures. Both an average value and a difference value are preferably formed.
  • the mean can be used to select the purge gas composition.
  • the purge gas consists of at least two gases with different thermal conductivity properties, which can also be noble gases. H2 / N2 or Ar / He or H2 / Ar are used as gas pairs.
  • the difference value can be used to make local corrections to the gap height, for example the height of the process chamber ceiling can be connected to the reactor housing in a height-adjustable manner. If there are difference values between two measured temperatures that exceed a predetermined threshold value, the gap height can be set locally. As a result, the length of the heat transfer path in the gap clearance space changes and, along with this, the heat flow through the gap clearance space changes.
  • Exceeding a differential value or a plurality of differential values of one or more predetermined setpoints can also be used as an opportunity to replace a process chamber ceiling or a new process chamber ceiling, which, when the CVD reactor is serviced, counteracts an incorrect, ie widely varying, process chamber - has been exchanged.
  • the broad side surfaces of the process chamber cover and the heat dissipation body to be facing one another are planes.
  • two temperature measuring devices for example pyrometers, can be used. These two temperature measuring devices are arranged at an angle of 180 degrees around the center. With such a constellation, a tilting of the two surfaces to be pointed towards one another at two diametrically opposite points leads to a minimum and a maximum gap height.
  • the process chamber ceiling temperature is minimal in the area of the minimum gap height.
  • the process chamber ceiling temperature is maximum in the area of the maximum gap height.
  • the average of the temperatures measured at these two zones is the average of the process chamber ceiling temperature.
  • several purge gas supply lines are provided.
  • the Spülgaszutechnische grant can be arranged around the center at a uniform angular V.
  • Segments of the gap spacing which are adjacent to one another are thus formed in the circumferential direction and can be flushed with an individual flushing gas mixture of a highly heat-conducting and a low-heat-conducting flushing gas.
  • the mixing ratio of the two gases in the purge gas is set on the basis of the measured temperatures.
  • FIG. 3 shows a representation according to FIG. 2 of a second exemplary embodiment, in which four temperature measuring devices 9 are provided. are, which measure process chamber ceiling temperatures at four temperature measuring zones 8, 8 ', 8 ", 8'", each offset by an angle a of 90 degrees to each other
  • FIG. 4 shows a representation according to FIG. 2 of a third exemplary embodiment.
  • the CVD reactor shown in the drawings is intended for depositing layers of elements of the III and V main groups on substrates 13 which are arranged on a susceptor 2.
  • a process chamber On the side of the susceptor 2 pointing away from the heating device 3 there is a process chamber which is delimited at the top by a process chamber ceiling 1.
  • a heat dissipation body 6 Above the process chamber ceiling 1 there is a heat dissipation body 6 with cooling channels 18, through which a liquid coolant flows.
  • a gap spacing 5 which, due to tolerances or design or due to draft, has different gap heights hi, h 2 at two different locations can.
  • the process chamber 4 opens a gas inlet member 15, which is fed by a gas inlet 14, which is located in the center Z of the process chamber 4 or the process chamber ceiling 1.
  • the process chamber cover 1 is an essentially circular disk-shaped body made of graphite, quartz or a suitable metal.
  • the process chamber ceiling 1 has an opening which is located in the center Z and through which the gas inlet 14 passes.
  • a purge gas supply line 19 is provided, through which a purge gas can be fed into the gap spacing 5 between the process chamber ceiling 1 and the heat dissipation body 6.
  • the purging gas consists of a mixture of at least two gases which have different thermal conductivity properties. The two gases can be nitrogen and hydrogen.
  • the gap spacing 5 has a different heat transfer resistance, so that due to the high temperature difference between the susceptor 2 and the heat dissipation body 6 of several 100 degrees over the composition of the purge gas, an average of Process chamber ceiling temperature can be set.
  • a plurality of substrates 13 are arranged in a circular arrangement around the center Z.
  • the gap height which is generally about 1 mm high, is shown greatly enlarged in FIG. 1 for clarity.
  • Two gap heights hi and h 2 which are diametrically opposed in the exemplary embodiment, can be different from one another.
  • the two gap heights hi and h 2 differ, so that different process chamber ceiling temperatures are set at the two points. Since the process chamber ceiling temperature locally influences the chemical reaction within the process chamber 4, the layer quality can differ locally.
  • the susceptor 2 is rotated around the center Z using means which are not shown but are otherwise known.
  • Measuring channels 10 are arranged in the heat dissipation body 6 at several angular positions. In the exemplary embodiment shown in FIG. 2, two measuring channels are arranged at diametrically opposite points. In the exemplary embodiment shown in FIG. 3, a total of four measuring channels 10 are provided, each of which has an angular distance a of 90 degrees. In exemplary embodiments not shown, other configurations, for example a six-fold symmetry of the measuring channels, can also be provided. Other exemplary embodiments of the invention do not have measurement channels 10 distributed uniformly around the center Z.
  • the measuring zones 8, 85 8 ", 8 '" are located radially outside of a substrate 13. In an embodiment not shown, the measuring zones 8 can also be between two substrates 13 or above the substrates lie.
  • Each measuring channel 10 includes a temperature measuring device 9, 95 9 ", 9" 5, which is preferably a pyrometer.
  • the beam path 11 of the pyrometer 9, 95 9 ", 9 runs through the measuring channel 10.
  • All temperature measuring zones 8, 85 8", 8 1 have the same radial distance R from the center Z. If, for example in the configuration shown in FIG. 1, a lower temperature is measured with the pyrometers 9 than with the pyrometer 95, this indicates that the gap height hi is smaller than the gap height h 2.
  • a tilting position of the process chamber ceiling 1 can be corrected by means of a holder 12, which can have an adjustment facility.
  • an average process chamber temperature can be determined very precisely with the configuration shown in FIG.
  • the surfaces 6 ', T do not run parallel to one another, but are each planes.
  • two of the above-mentioned temperature measurement zones 8, 85 8 ", 8 are sufficient to determine an average temperature, the inclination axis, about which the process chamber ceiling 1 is inclined with respect to the heat dissipation body 6, being in any angular position Connection line between the two temperature measuring zones 8, 85 8 ", 8 '" can run.
  • the zones 8, 85 8 ", 8 '" are at the same radial distance R from the center Z, on which the substrates 13 are also located.
  • FIG 4 shows a further development with regard to the purge gas supply.
  • the purge gas supply lines 19, 195 19 “, 19 '” are spaced from the center Z and lie approximately in the radial center of the gap spacing 5.
  • Each purge gas supply line 19, 195 19 “, 19'” allows an individual mixture of a purge gas from two bases - gases are fed in, the two base gases differing in their thermal conductivity. The above gases can be used.
  • the mixing ratio of the two base gases is set as a function of the temperatures measured in zones 8, 8 ', 8 "8 in order to bring the temperature of the process chamber ceiling 1 to a value that is as constant as possible.
  • a method which is characterized in that a temperature of the process chamber ceiling 1 is measured by means of at least two respectively at different azimuthal angular positions around a center Z of the process chamber 4 and at the same radial distance R to the center Z of the process chamber 4.
  • temperatures are the surface temperatures of zones 8, in particular adjacent to the edge 7 of the process chamber ceiling 1, which are spaced apart from the edge 7, in particular in the region of the radial distance of a substrate 13, from the heat dissipation body 6 facing broadside surface T, which are measured in particular with a pyrometer 9, 9 'in each case.
  • Can be the Spülgaszu effet 19, 19 ', 19 “, 19'” are here in egg regular ner periphery V grant arranged so that the thermal conductivity speeds through the gap distance area 5 in a plurality of segments individually placed one.
  • a method which is characterized in that a differential value exceeding a predetermined threshold value for local correction of the gap height h1, h2 of the gap spacing space 5 defined by the distance of the heat-conducting body 6 from the process chamber ceiling 1 or as an occasion for an exchange the process chamber ceiling 1 is used.
  • An apparatus which is characterized by at least two temperature measuring devices 9, 9 ', in particular pyrometers, which are arranged at different azimuthal angular positions around a center Z of the process chamber 4 at the same radial distance R from the center Z, in each case to measure a temperature of the process chamber ceiling 1.
  • a device which is characterized in that a plurality of Spülgaszu effet 19, 195 19 “, 19 '” are provided, which preferably in much more uniform ger angle V grant around the center Z, said through each of the Spülgaszu effet 19 , 195 19 “, 19 '” a purge gas mixture which is dependent on the measured temperature is fed into the gap spacing 5.
  • a device which is characterized in that the broad side surface T of the process chamber ceiling 1 facing the heat dissipation body 6 and the surface 6 'of the heat dissipation body 6 facing the process chamber ceiling 1 are essentially planes and uses exactly two temperature measuring devices 9, 9' be arranged around the center Z by an angle a of 180 degrees.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de réglage ou de fonctionnement d'un réacteur de CVD ainsi qu'un réacteur de CVD pour la mise en œuvre du procédé, avec lequel une ou plusieurs couches peuvent être déposées sur un ou plusieurs substrats. Un suscepteur (2) est chauffé au moyen d'un dispositif de chauffage (3). La chaleur est transportée du suscepteur (2) à travers une chambre de processus (4) jusqu'à un plafond de chambre de processus (1), à travers le plafond de chambre de processus (1), puis du plafond de la chambre de processus (1) à travers un espace inter-colonnes (5) vers un corps dissipateur de chaleur (6). La température du plafond de chambre de processus (1) est mesurée au moins à deux positions angulaires azimutales différentes autour d'un centre (Z) de la chambre de processus (4). Les points de mesure ou les zones (8, 8', 8'', 8''') présentent la même distance radiale (R) par rapport au centre (Z) de la chambre de processus (4). Une valeur moyenne ou une valeur différentielle est mesurée à partir des ces au moins deux valeurs mesurées de la température.
EP19765977.4A 2018-09-07 2019-09-03 Procédé de réglage ou de fonctionnement d'un réacteur de cvd Pending EP3847293A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018121854.0A DE102018121854A1 (de) 2018-09-07 2018-09-07 Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors
PCT/EP2019/073464 WO2020048981A2 (fr) 2018-09-07 2019-09-03 Procédé de réglage ou de fonctionnement d'un réacteur de cvd

Publications (1)

Publication Number Publication Date
EP3847293A2 true EP3847293A2 (fr) 2021-07-14

Family

ID=67909369

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19765977.4A Pending EP3847293A2 (fr) 2018-09-07 2019-09-03 Procédé de réglage ou de fonctionnement d'un réacteur de cvd

Country Status (8)

Country Link
US (1) US11713505B2 (fr)
EP (1) EP3847293A2 (fr)
JP (1) JP7439056B2 (fr)
KR (1) KR102803234B1 (fr)
CN (1) CN112969815B (fr)
DE (1) DE102018121854A1 (fr)
TW (1) TWI848001B (fr)
WO (1) WO2020048981A2 (fr)

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DE102013114412A1 (de) * 2013-12-18 2015-06-18 Aixtron Se Vorrichtung und Verfahren zur Regelung der Temperatur in einer Prozesskammer eines CVD-Reaktors unter Verwendung zweier Temperatursensoreinrichtungen
DE102014106871A1 (de) 2014-05-15 2015-11-19 Aixtron Se Verfahren und Vorrichtung zum Abscheiden dünner Schichten auf einem Substrat und einer höhenverstellbaren Prozesskammer
US20160282886A1 (en) * 2015-03-27 2016-09-29 Applied Materials, Inc. Upper dome temperature closed loop control
JP2017190506A (ja) 2016-04-14 2017-10-19 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
DE102017105333A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Verfahren und Vorrichtung zur thermischen Behandlung eines Substrates
DE102018121854A1 (de) * 2018-09-07 2020-03-12 Aixtron Se Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors
DE102019104433A1 (de) * 2019-02-21 2020-08-27 Aixtron Se CVD-Reaktor mit Mitteln zur lokalen Beeinflussung der Suszeptortemperatur

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WO2020048981A3 (fr) 2020-05-14
WO2020048981A2 (fr) 2020-03-12
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US20210310120A1 (en) 2021-10-07
US11713505B2 (en) 2023-08-01
JP2021536530A (ja) 2021-12-27
TW202031925A (zh) 2020-09-01
CN112969815B (zh) 2024-04-30
CN112969815A (zh) 2021-06-15
DE102018121854A1 (de) 2020-03-12
KR102803234B1 (ko) 2025-04-30
TWI848001B (zh) 2024-07-11

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