EP3852131A4 - Verfahren zur herstellung eines halbleiterbauelements und ätzgas - Google Patents

Verfahren zur herstellung eines halbleiterbauelements und ätzgas Download PDF

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Publication number
EP3852131A4
EP3852131A4 EP19858978.0A EP19858978A EP3852131A4 EP 3852131 A4 EP3852131 A4 EP 3852131A4 EP 19858978 A EP19858978 A EP 19858978A EP 3852131 A4 EP3852131 A4 EP 3852131A4
Authority
EP
European Patent Office
Prior art keywords
fabricating
semiconductor device
etching gas
etching
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19858978.0A
Other languages
English (en)
French (fr)
Other versions
EP3852131A1 (de
Inventor
Takaya Ishino
Toshiyuki Sasaki
Mitsuharu SHIMODA
Hisashi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Denka Kogyo Co Ltd
Kioxia Corp
Original Assignee
Kanto Denka Kogyo Co Ltd
Kioxia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Denka Kogyo Co Ltd, Kioxia Corp filed Critical Kanto Denka Kogyo Co Ltd
Publication of EP3852131A1 publication Critical patent/EP3852131A1/de
Publication of EP3852131A4 publication Critical patent/EP3852131A4/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
EP19858978.0A 2018-09-11 2019-07-10 Verfahren zur herstellung eines halbleiterbauelements und ätzgas Pending EP3852131A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018169983A JP7173799B2 (ja) 2018-09-11 2018-09-11 半導体装置の製造方法およびエッチングガス
PCT/JP2019/027316 WO2020054200A1 (ja) 2018-09-11 2019-07-10 半導体装置の製造方法およびエッチングガス

Publications (2)

Publication Number Publication Date
EP3852131A1 EP3852131A1 (de) 2021-07-21
EP3852131A4 true EP3852131A4 (de) 2022-05-25

Family

ID=69777114

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19858978.0A Pending EP3852131A4 (de) 2018-09-11 2019-07-10 Verfahren zur herstellung eines halbleiterbauelements und ätzgas

Country Status (7)

Country Link
US (2) US20210193475A1 (de)
EP (1) EP3852131A4 (de)
JP (2) JP7173799B2 (de)
KR (2) KR102587426B1 (de)
CN (1) CN112673459B (de)
TW (1) TWI724465B (de)
WO (1) WO2020054200A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12106971B2 (en) * 2020-12-28 2024-10-01 American Air Liquide, Inc. High conductive passivation layers and method of forming the same during high aspect ratio plasma etching
JP7547220B2 (ja) 2021-01-12 2024-09-09 キオクシア株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP2022191787A (ja) * 2021-06-16 2022-12-28 キオクシア株式会社 半導体装置の製造方法
CN117936454A (zh) * 2022-10-11 2024-04-26 长鑫存储技术有限公司 半导体结构的制作方法及半导体结构
US20260052921A1 (en) * 2024-08-13 2026-02-19 Applied Materials, Inc. Deep trench isolation etching

Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2008300616A (ja) * 2007-05-31 2008-12-11 Nippon Zeon Co Ltd エッチング方法
EP2733725A1 (de) * 2011-07-27 2014-05-21 Central Glass Company, Limited Trockenätzmittel
US20150294880A1 (en) * 2012-10-30 2015-10-15 Curtis Anderson Fluorocarbon molecules for high aspect ratio oxide etch
US20150357200A1 (en) * 2012-12-27 2015-12-10 Zeon Corporation Dry etching method
US20160218015A1 (en) * 2015-01-23 2016-07-28 Central Glass Company, Limited Dry Etching Method

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JPS5827464Y2 (ja) 1978-11-07 1983-06-15 東芝熱器具株式会社 サ−モスタツト
JPS5569416U (de) 1978-11-08 1980-05-13
US5935877A (en) * 1995-09-01 1999-08-10 Applied Materials, Inc. Etch process for forming contacts over titanium silicide
US5876664A (en) * 1996-06-14 1999-03-02 American Sterilizer Company Continuous-operation, closed loop decontamination system and method
JPH10199865A (ja) * 1996-10-30 1998-07-31 Agency Of Ind Science & Technol ドライエッチング用ガス組成物およびドライエッチング方法
JP5569353B2 (ja) 2000-04-28 2014-08-13 ダイキン工業株式会社 ドライエッチングガスおよびドライエッチング方法
US7008808B2 (en) * 2004-05-05 2006-03-07 Taiwan Semiconductor Manufacturing Co Ltd Method of manufacturing LCOS spacers
KR20070009729A (ko) 2004-05-11 2007-01-18 어플라이드 머티어리얼스, 인코포레이티드 불화탄소 에칭 화학반응에서 Ｈ2 첨가를 이용한탄소-도핑-Ｓｉ 산화물 에칭
JP2006128245A (ja) * 2004-10-27 2006-05-18 Sony Corp 絶縁膜の加工方法
JP2006156539A (ja) * 2004-11-26 2006-06-15 National Institute Of Advanced Industrial & Technology プラズマ反応用ガス
JP5152521B2 (ja) * 2009-02-19 2013-02-27 日本ゼオン株式会社 ハロゲン化化合物を脱ハロゲン化水素する方法
WO2012023537A1 (ja) * 2010-08-19 2012-02-23 株式会社 アルバック ドライエッチング方法及び半導体装置の製造方法
JP2013175605A (ja) * 2012-02-24 2013-09-05 Toshiba Corp 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置
US20180277387A1 (en) 2014-08-06 2018-09-27 American Air Liquide, Inc. Gases for low damage selective silicon nitride etching
TW201627047A (zh) * 2015-01-22 2016-08-01 Zeon Corp 氟化烴化合物的精製方法
JP6544215B2 (ja) * 2015-01-23 2019-07-17 セントラル硝子株式会社 ドライエッチング方法
JP6636250B2 (ja) 2015-02-12 2020-01-29 関東電化工業株式会社 ドライエッチングガス組成物及びドライエッチング方法
JP6327295B2 (ja) 2015-08-12 2018-05-23 セントラル硝子株式会社 ドライエッチング方法
JP6514138B2 (ja) * 2016-03-10 2019-05-15 東芝メモリ株式会社 半導体装置の製造方法
US10566232B2 (en) * 2017-05-18 2020-02-18 Taiwan Semiconductor Manufacturing Co., Ltd. Post-etch treatment of an electrically conductive feature
US10541246B2 (en) * 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US11075084B2 (en) 2017-08-31 2021-07-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Chemistries for etching multi-stacked layers
US10832966B2 (en) * 2018-02-20 2020-11-10 Globalfoundries Inc. Methods and structures for a gate cut

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300616A (ja) * 2007-05-31 2008-12-11 Nippon Zeon Co Ltd エッチング方法
EP2733725A1 (de) * 2011-07-27 2014-05-21 Central Glass Company, Limited Trockenätzmittel
US20150294880A1 (en) * 2012-10-30 2015-10-15 Curtis Anderson Fluorocarbon molecules for high aspect ratio oxide etch
US20150357200A1 (en) * 2012-12-27 2015-12-10 Zeon Corporation Dry etching method
US20160218015A1 (en) * 2015-01-23 2016-07-28 Central Glass Company, Limited Dry Etching Method

Also Published As

Publication number Publication date
KR20230097221A (ko) 2023-06-30
EP3852131A1 (de) 2021-07-21
US20230307244A1 (en) 2023-09-28
KR20210053905A (ko) 2021-05-12
CN112673459B (zh) 2024-11-22
US20210193475A1 (en) 2021-06-24
KR102657842B1 (ko) 2024-04-17
CN112673459A (zh) 2021-04-16
WO2020054200A1 (ja) 2020-03-19
KR102587426B1 (ko) 2023-10-11
US12261050B2 (en) 2025-03-25
JP2020043239A (ja) 2020-03-19
JP7400058B2 (ja) 2023-12-18
TWI724465B (zh) 2021-04-11
JP2023002798A (ja) 2023-01-10
TW202010869A (zh) 2020-03-16
JP7173799B2 (ja) 2022-11-16

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