EP3879584A4 - Leuchtdiode - Google Patents

Leuchtdiode Download PDF

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Publication number
EP3879584A4
EP3879584A4 EP19882208.2A EP19882208A EP3879584A4 EP 3879584 A4 EP3879584 A4 EP 3879584A4 EP 19882208 A EP19882208 A EP 19882208A EP 3879584 A4 EP3879584 A4 EP 3879584A4
Authority
EP
European Patent Office
Prior art keywords
light
emitting diode
diode
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19882208.2A
Other languages
English (en)
French (fr)
Other versions
EP3879584A1 (de
Inventor
Chung Hoon Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of EP3879584A1 publication Critical patent/EP3879584A1/de
Publication of EP3879584A4 publication Critical patent/EP3879584A4/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
EP19882208.2A 2018-11-07 2019-11-07 Leuchtdiode Pending EP3879584A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862756935P 2018-11-07 2018-11-07
US16/672,676 US11271136B2 (en) 2018-11-07 2019-11-04 Light emitting device
PCT/KR2019/015090 WO2020096384A1 (ko) 2018-11-07 2019-11-07 발광 소자

Publications (2)

Publication Number Publication Date
EP3879584A1 EP3879584A1 (de) 2021-09-15
EP3879584A4 true EP3879584A4 (de) 2022-08-03

Family

ID=70458746

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19882208.2A Pending EP3879584A4 (de) 2018-11-07 2019-11-07 Leuchtdiode

Country Status (7)

Country Link
US (3) US11271136B2 (de)
EP (1) EP3879584A4 (de)
JP (1) JP7500556B2 (de)
KR (1) KR102857446B1 (de)
CN (2) CN113056830B (de)
BR (1) BR112021008898A2 (de)
WO (1) WO2020096384A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
US11271136B2 (en) 2018-11-07 2022-03-08 Seoul Viosys Co., Ltd Light emitting device
US11211528B2 (en) * 2019-03-13 2021-12-28 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
US11862616B2 (en) * 2020-02-26 2024-01-02 Seoul Viosys Co., Ltd. Multi wavelength light emitting device and method of fabricating the same
US12080687B2 (en) * 2020-10-16 2024-09-03 Seoul Viosys Co., Ltd. Unit pixel having light emitting device, method of fabricating the same, and displaying apparatus having the same
WO2024074702A1 (en) * 2022-10-06 2024-04-11 Ams-Osram International Gmbh Light emitting device
WO2025105266A1 (ja) * 2023-11-15 2025-05-22 日亜化学工業株式会社 発光素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008251561A (ja) * 2007-03-29 2008-10-16 Toyoda Gosei Co Ltd 表示装置
US20170263828A1 (en) * 2016-03-14 2017-09-14 Innolux Corporation Display device
US20180058644A1 (en) * 2016-08-24 2018-03-01 Nichia Corporation Light emitting device
US20200144448A1 (en) * 2018-11-07 2020-05-07 Seoul Viosys Co., Ltd Light emitting device

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4432275B2 (ja) * 2000-07-13 2010-03-17 パナソニック電工株式会社 光源装置
JP2002289357A (ja) 2001-03-28 2002-10-04 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル
KR101087567B1 (ko) 2004-03-23 2011-11-28 엘지디스플레이 주식회사 유기전계발광 소자 및 그 제조방법
US7524686B2 (en) * 2005-01-11 2009-04-28 Semileds Corporation Method of making light emitting diodes (LEDs) with improved light extraction by roughening
US8318519B2 (en) * 2005-01-11 2012-11-27 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
EP2234182B1 (de) * 2007-12-28 2016-11-09 Nichia Corporation Halbleiter-leuchtelement und verfahren zu seiner herstellung
EP2442374B1 (de) 2010-10-12 2016-09-21 LG Innotek Co., Ltd. Lichtemittierende Vorrichtung
KR101769048B1 (ko) 2010-12-22 2017-08-17 엘지이노텍 주식회사 발광 소자, 이를 포함하는 발광소자 패키지 및 조명 장치
JP5862354B2 (ja) * 2011-04-15 2016-02-16 三菱化学株式会社 窒化物系発光ダイオード素子とその製造方法
JP5869678B2 (ja) * 2011-09-16 2016-02-24 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード及びそれを製造する方法
KR20140066397A (ko) * 2012-11-23 2014-06-02 서울바이오시스 주식회사 복수개의 단위 발광소자들을 갖는 발광다이오드
JP2014167948A (ja) * 2013-01-30 2014-09-11 Mitsubishi Chemicals Corp 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置
KR102087947B1 (ko) * 2014-07-18 2020-03-11 엘지이노텍 주식회사 발광 소자 및 그 제조 방법
EP3041988B1 (de) * 2013-09-06 2017-07-19 Teijin Aramid B.V. Trennpapier für elektrochemische zellen
JP2015056650A (ja) 2013-09-13 2015-03-23 株式会社東芝 発光装置
KR20150102179A (ko) 2014-02-27 2015-09-07 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
DE102014106585A1 (de) * 2014-05-09 2015-11-12 Leonhard Kurz Stiftung & Co. Kg Mehrschichtkörper und Verfahren zu dessen Herstellung
US9608168B2 (en) * 2014-06-13 2017-03-28 Seoul Viosys Co., Ltd. Light emitting diode
JP2016046461A (ja) * 2014-08-26 2016-04-04 豊田合成株式会社 半導体発光素子ウエハ及び半導体発光素子並びに半導体発光素子の製造方法
KR102657885B1 (ko) * 2015-10-19 2024-04-17 루미리즈 홀딩 비.브이. 텍스처화된 기판을 갖는 파장 변환된 발광 디바이스
JP6564348B2 (ja) * 2016-06-06 2019-08-21 日機装株式会社 深紫外発光素子
JP6871706B2 (ja) * 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
KR102734057B1 (ko) * 2017-02-24 2024-11-26 서울바이오시스 주식회사 광 차단층을 가지는 발광 다이오드
US10340425B2 (en) * 2016-11-25 2019-07-02 Seoul Viosys Co., Ltd. Light emitting diode having light blocking layer
JP7255965B2 (ja) * 2017-08-24 2023-04-11 日機装株式会社 半導体発光素子の製造方法
US11121299B2 (en) * 2018-10-31 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11482650B2 (en) * 2018-11-07 2022-10-25 Seoul Viosys Co., Ltd. Light emitting device including light shielding layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008251561A (ja) * 2007-03-29 2008-10-16 Toyoda Gosei Co Ltd 表示装置
US20170263828A1 (en) * 2016-03-14 2017-09-14 Innolux Corporation Display device
US20180058644A1 (en) * 2016-08-24 2018-03-01 Nichia Corporation Light emitting device
US20200144448A1 (en) * 2018-11-07 2020-05-07 Seoul Viosys Co., Ltd Light emitting device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020096384A1 *

Also Published As

Publication number Publication date
CN113056830A (zh) 2021-06-29
US20200144448A1 (en) 2020-05-07
KR20210074301A (ko) 2021-06-21
CN210743973U (zh) 2020-06-12
WO2020096384A1 (ko) 2020-05-14
BR112021008898A2 (pt) 2021-08-10
JP2022506047A (ja) 2022-01-17
US20220262982A1 (en) 2022-08-18
JP7500556B2 (ja) 2024-06-17
CN113056830B (zh) 2024-08-23
KR102857446B1 (ko) 2025-09-09
EP3879584A1 (de) 2021-09-15
US11916168B2 (en) 2024-02-27
US20240154061A1 (en) 2024-05-09
US11271136B2 (en) 2022-03-08

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