Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
  • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
  • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32532—Electrodes
  • H01J37/32577—Electrical connecting means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32715—Workpiece holder
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32733—Means for moving the material to be treated
  • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
  • H01J37/32761—Continuous moving
  • H01J37/32779—Continuous moving of batches of workpieces
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the present invention relates to a plasma-assisted chemical vapor deposition device having reconfigurable deposition zones.
• Plasma-assisted chemical vapor deposition or PECVD for Plasma-Enhanced Chemical Vapor Deposition is a process used to deposit thin layers on a substrate from a gaseous state.
• This deposition is for example implemented in the field of the manufacture of photovoltaic cells for the deposition of dielectric layers on a substrate, for example made of silicon.
• the plasma assisted chemical vapor deposition process proceeds as follows. Chemical reactions take place after the formation of a plasma from gas.
• the plasma is created from one or more gases in it or by applying an excitation to them by electric discharge generated from radiofrequency sources (40 kHz to 440 kHz).
• an excitation by capacitive discharge is carried out by applying an alternating current or radiofrequency between two electrodes.
• the gas being injected from the top of the tube, extinctions and ignitions of the plasma over time make it possible to obtain good homogeneity of the deposit along the tube.
• Low frequency excitations 40 kHz to 440 kHz
• the working pressure is between 100 mTorrs and 2000 mTorrs.
• SiN x Silicon nitride
• SiO x silicon oxide
• N 2 O nitrous oxide
• PECVD deposition is also very widely used in order to deposit layers of aluminum oxide (AIO x ) in order to passivate the rear face of photovoltaic cells with a PERC structure (Passivated Emitter and Rear Cell in English terminology).
• AIO x aluminum oxide
• PERC structure Passivated Emitter and Rear Cell in English terminology
• a nacelle In the case of industrial manufacture, a nacelle is used, for example, comprising a plurality of trays stacked one on top of the other, intended to form electrodes, the trays being electrically insulated from one another. Each plate forms a support for one or more substrates on which it is desired to make the deposit (s).
• opposite polarities are applied to two adjacent plates by means of a high frequency generator.
• An electric field between two adjacent electrodes is then generated, which allows the formation of a plasma and the deposition on the substrate or substrates supported by the plates.
• a PECVD deposition device comprising an enclosure configured to perform a PECVD deposition, at least one nacelle comprising a plurality of electrically conductive plates superimposed and electrically insulated from each other, at least one electric generator supplying power.
• the plates and electrical connection means between the generator and the plates, said connection means comprise switching means allowing, in a switching state, that at least one plate has the same polarity as the directly adjacent plate. The zone located between these two plates of the same polarity is then not the seat of an electric field and no plasma is generated in this zone. No deposit then takes place on the substrate located in this zone.
• the deposition device has at least 3 trays, so two adjacent trays can be at the same polarity and two adjacent trays can be at opposite polarities.
• the invention it is therefore possible to individualize at least in part the polarization of the plates and therefore to individualize at least in part the deposits. It is then possible to at least partially configure the drop zones as required.
• connection means are configured to make it possible to modify the polarity of every other plate and the plates are each pierced at least with one through window.
• the two faces of the substrate are exposed to the environment in the enclosure and are liable to be covered by a deposit.
• individually managing at least in part the polarities of the plates it is possible during a deposition phase to deposit on a single face of the substrate. This is particularly advantageous in the manufacture of photovoltaic cells and in particular of silicon photovoltaic cells, which comprise on the front face a final antireflection layer and on the rear face a final passivation layer.
• Window trays also offer the advantage of not having to handle the substrates between deposition phases on two different sides of the substrates. In one mode of operation, it is conceivable to only polarize a group of plates in order to effect deposits only on the substrates housed between these plates.
• the present invention therefore relates to a plasma-assisted chemical vapor deposition device on a plurality of substrates comprising an enclosure configured to perform plasma-assisted chemical vapor deposition, at least one nacelle comprising n superimposed plates intended to support each at least one substrate, the plates being made of an electrically conductive material and being electrically insulated from each other, gas supply means and discharge means connected to the enclosure, an electric generator, a connection circuit between the electric generator and the trays.
• the connection circuit has switching means such that, at least in a switching state, two adjacent platters have the same polarities and two adjacent platters have opposite polarities.
• the switching means have a switching state, in which the adjacent plates have opposite polarities.
• connection circuit can include direct electrical connections between the generator and at least m plates, 0 ⁇ m, and electrical connections with switching means between the generator and n-m plates.
• At least part of the plates comprise at least one window forming a housing for a substrate, said window comprising means for supporting the outer edge of said substrate.
• the support means include pins.
• connection circuit may include means for controlling the switching means associated with the deposits to be made.
• the trays are oriented such that the substrates are horizontal in the pod.
• the present invention also relates to a plate for a plasma-assisted chemical vapor deposition device, made of an electrically conductive material and comprising at least one through window forming a housing for a substrate, said window comprising means for supporting the outer edge of said substrate.
• the support means comprise, for example, pins.
• a subject of the present invention is also a plasma-assisted chemical vapor deposition process using the deposition device according to the invention, comprising:
• the deposition process can comprise after stopping the polarization: a ′) A purge of the enclosure to remove the gases remaining from the previous deposition phase.
• Steps a ') to f') can be repeated for each additional layer deposited.
• the trays comprise at least one window forming a housing for a substrate and the substrates have a first face and a second face
• the substrates can be loaded so that the substrates supported by two adjacent trays have either their first faces oriented towards one another, ie their second faces oriented towards one another.
• FIG. 1 is a schematic representation of a PECVD deposition device according to an exemplary embodiment
• FIG. 2 is an exemplary schematic representation of a nacelle and of an example of a connection circuit implemented in a deposition device in a first connection state
• FIGS. 3A and 3B are perspective views of an example of a tray comprising windows with and without a substrate respectively
• FIG. 4 is a graphic representation of an example of polarizations of two adjacent plates allowing the formation of a plasma
• FIG. 5 is a graphic representation of an example of polarizations of two adjacent plates not allowing the formation of a plasma
• FIG. 6 represents the nacelle and the connection circuit of FIG. 2 in a second connected state.
• the following description relates more particularly to a PECVD deposition device in which the substrates are arranged horizontally.
• the invention also applies to PECVD devices in which the substrates are arranged vertically.
• FIG 1 we can see a schematic representation of a PECVD deposition device comprising a sealed enclosure 2 with an access door, a nacelle 4 intended to be housed in the enclosure 2 during the deposition phases and able to exit. at least to load / unload substrates.
• the nacelle 4 comprises plates PI, P2, P3 ... Pn.
• n 8.
• N is at least equal to 3.
• n is of the order of 70 to 100.
• the plates are superimposed on each other so that a space E1, E2 ,. ..En-l is spared between each pair of trays.
• the plates are made of an electrically conductive material and are intended to form electrodes between which an electric field can appear.
• the trays are in graphite.
• the trays are electrically isolated from each other.
• electrically insulating spacers for example made of alumina, are interposed between each pair of plates. The spacers also ensure the spacing of the plates from one another in order to spare the spaces El, E2 ... En-l.
• the distance between the plates is for example between 8 mm and
• the device also includes fluidic supply connections 6.1 for supplying the gases forming the plasma and carrying out the deposition, and fluidic connections 6.2 for discharging the gases after the deposition phase.
• the feed is from the top and the evacuation is from the bottom ensuring the gas passes through the nacelle.
• the device also comprises at least one electric generator 8 for electrically supplying the platforms of the nacelle 4.
• the generator 8 is for example a radiofrequency voltage generator or an alternating current generator.
• the deposition device also comprises an electrical connection circuit 10 between the + and - terminals of the generator and the platforms of the nacelle.
• the frequency of the RF generator is between 40 kHz to 440 kHz, and the voltage between 2 electrodes is between 50 Volts and 500 Volts.
• connection circuit 10 comprises electrical connectors 12 directly connecting the + terminal to plates P2, P6, electrical connectors 14 directly connecting the - terminal to the plates P4, P8.
• connection circuit also comprises electrical connectors 16, connecting the + terminal to plates PI, P3, P5, P7 by means of switching means C1, C2 and electrical connectors 18, connecting the terminal + to plates PI , P3, P5, P6 via the switching means C1, C2.
• the plates PI, PB, P5, P7 can be either all connected to the + terminal, or all to the - terminal, or partly to the + terminal and partly to the terminal
• the plates P2 ... Pn-1 (P2 in FIGS. 3A and 3B) comprise through openings 20 in the thickness of the plate, and intended to accommodate the substrates S on the faces of which deposits must take place.
• the PI and PN plates (P8 in FIG. 2) are full to avoid having substrates comprising a face on which it is not possible to deposit.
• the P1 tray is full and does not support a substrate
• the P8 tray is full and supports substrates.
• all the plates are identical.
• the substrates of the PI and P8 plates are then treated specifically.
• the openings 20 have supports for the substrates.
• the supports are formed by pins 22 projecting from the edges of the openings 20. The use of pins reduces the surface area not exposed to the plasma.
• the openings and the substrates are square. Alternatively, the substrates are square in shape with the four cut corners, designated "pseudo-square".
• the substrates are disc-shaped and the openings are circular.
• the shapes of the openings are such that the substrates close them off substantially completely.
• each plate the two faces F1, F2 or the front face and the rear face of each substrate are therefore accessible for a deposit.
• the impedance of each plate is reduced, which makes it possible to increase the deposition rate, in fact the voltage at the terminals of the electrode is then higher for the same radiofrequency power.
• the thermal mass of each plate is also reduced, which makes it possible to reduce the time it takes for the nacelle to heat up.
• Plates P2 to P8 have been loaded with substrates S.
• the substrates are loaded such that the same faces of the substrates carried by two adjacent plates are oriented towards the same space En.
• the front face of a substrate supported by a plate is oriented towards the same space as the front face of a substrate carried by the adjacent plate.
• layers of the same material can be deposited simultaneously on the same faces of two substrates of two adjacent plates.
• the surfaces F1 of the substrates are oriented upwards on the plates PB, P5 and P7, and downwards on the plates P2, P4, P6 and P8.
• the interior of the enclosure is supplied with gas, for example with a mixture of silane (SiFU) and ammonia (NH3) to produce a layer of silicon nitride.
• gas for example with a mixture of silane (SiFU) and ammonia (NH3) to produce a layer of silicon nitride.
• the adjacent platters PI and P2 are positively polarized.
• the adjacent platters P5 and P6 are positively biased.
• the adjacent platters P3 and P4 are negatively biased.
• the adjacent platters P5 and P6 are negatively biased.
• FIG. 4 one can see graphically represented the variations of the voltage V as a function of time t applied to two adjacent plates, for example P2 and P3, allowing a state of polarization of the plates between which a plasma can be generated. At every moment the two plates are at opposite polarities. This state corresponds to the pairs of trays P2-P3, P4-P5, P6-P7.
• a plasma can only be generated when an electric field appears between two adjacent plateaus. In view of the above polarizations, plasmas are generated only in the spaces E2, E4, E6. Deposits then take place on the Fl faces of the substrates of the plates P2, PB, P4, P5, P6 and P7.
• the switches C1 and C2 can be seen in another connection state, which implies that the plates P1, P3, P5, P7 are in another state of polarization.
• the adjacent plates P2 and P3 are positively polarized.
• the adjacent platters P6 and P7 are positively biased.
• the adjacent platters P4 and P5 are negatively biased.
• the adjacent platters P1 and P8 are negatively biased.
• a passivation layer for example made of silicon oxide (SiOx) from silane and protoxide of nitrogen (N2O), generally at pressures ranging from a few hundred millitorrs to a few torrs, in two stages (switching states of figure 2 then switching state of figure 6), then depositing on the front face F2 only the silicon nitride antireflection layer from a mixture of silane (SiFU) and ammonia (NH 3 ).
• SiOx silicon oxide
• N2O protoxide of nitrogen
• connection circuit comprises means for controlling the switching of switches C1 and C2 in a programmed manner. depending on a cycle of deposits on both sides of the substrates. Thus the operator does not need to intervene on the deposition device during the entire deposition cycle.
• the perforated plates and the connection circuit according to the invention have the advantage of making it possible to carry out all the deposits on both sides of the substrates without having to turn the substrates over, which represents a saving of time and a significant saving of energy. .
• the deposition on each face involves turning the substrates upside down.
• turning over involves purging the enclosure, opening it and allowing the nacelle to cool before handling. This time is very long relative to the deposit time.
• the deposits can be made successively without having to open the enclosure.
• a gain in energy can be achieved since the enclosure can remain at a high temperature.
• the windows are made so that when the plates are superimposed they are aligned along the vertical direction, but this configuration is not limiting. Indeed, the substrates of two adjacent plates may not be facing each other.
• connection circuit configuration makes it possible to implement only two switches. But it does not make it possible to modify the polarity of all the plates.
• connection circuit comprises a switch associated with each plate making it possible to modify the polarity of each plate individually and thus making it possible to manage each deposit space individually.
• the connection circuit can then be configured to allow deposition on all faces simultaneously, which is advantageous for depositing the dielectric layer on the front and rear faces of the photovoltaic cells.
• connection circuit making it possible to modify the polarity of at least one platform of the nacelle so that it has either the same polarity as that of the adjacent plate, or an opposite polarity falls within the scope of the present invention.
• the operation of the device has been described as making it possible to carry out a deposition on one or the other of the faces of a substrate during a deposition phase.
• the switching state of the switches may not be modified between two successive deposits.
• the present invention also applies to PECVD devices in which the substrates are vertical.
• the trays are vertical and include means for maintaining the substrates vertically.
• the connection circuit is similar to that described above.
• the device can also operate so as to deposit on both faces of the substrates carried by plates located in one or more zones of the nacelle, for example the substrates of the plates located in the upper part of the nacelle, these plates then have alternate polarities and the platters in the lower part all have the same polarity.
• the device according to the invention therefore has great flexibility in the production of deposits, in particular their succession.
• it can make it possible to carry out several deposits successively on different faces of the substrates without having to handle the substrates, which represents a saving of time and a significant saving of energy.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Plasma & Fusion (AREA)
• General Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Analytical Chemistry (AREA)
• Chemical Vapour Deposition (AREA)

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• 2019
  • 2019-05-15 FR FR1905073A patent/FR3096058B1/fr active Active
• 2020
  • 2020-05-13 WO PCT/EP2020/063306 patent/WO2020229529A1/fr not_active Ceased
  • 2020-05-13 CN CN202080035790.0A patent/CN113840943A/zh active Pending
  • 2020-05-13 EP EP20724166.2A patent/EP3947771A1/de not_active Withdrawn

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