EP4136680A1 - Procédé pour améliorer le comportement de contact ohmique entre une grille de contact et une couche d'émission d'une cellule solaire au silicium - Google Patents

Procédé pour améliorer le comportement de contact ohmique entre une grille de contact et une couche d'émission d'une cellule solaire au silicium

Info

Publication number
EP4136680A1
EP4136680A1 EP21735846.4A EP21735846A EP4136680A1 EP 4136680 A1 EP4136680 A1 EP 4136680A1 EP 21735846 A EP21735846 A EP 21735846A EP 4136680 A1 EP4136680 A1 EP 4136680A1
Authority
EP
European Patent Office
Prior art keywords
treatment
solar cell
current
silicon solar
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21735846.4A
Other languages
German (de)
English (en)
Inventor
Hongming ZHAO
Stefan STÖCKEL
Eckehard Hofmüller
Eve KRASSOWSKI
Marko Turek
Christian Hagendorf
Stephan Grosser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
CE Cell Engineering GmbH
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
CE Cell Engineering GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV, CE Cell Engineering GmbH filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Publication of EP4136680A1 publication Critical patent/EP4136680A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • H02S50/15—Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell. is applied between the contact grid and a back contact of the silicon solar cell and when this voltage is applied a point light source is guided over the sun-facing side of the silicon solar cell and treatment sections of sub-areas of the sun-facing side are illuminated and a treatment current flow is thus induced in the respective sub-area and this treatment current flow is based on the treatment section has a current density of 200 A / cm 2 to 20,000 A / cm 2 and acts on the partial area for 10 ns to 10 ms t.
  • a metal paste is applied to the front side coated with dielectric silicon nitride in the form of a contact grid using a screen printing process.
  • a tempering step at 800-900 ° C. is carried out after the application of the metal paste.
  • the silver of the metal paste diffuses through the silicon nitride layer into the emitter layer, supported by a glass frit contained in the metal paste.
  • the process control during the tempering step has a decisive influence on the formation of contacts. If the process is carried out correctly, the transition between the contact grid and the emitter layer is characterized by a low contact resistance.
  • DE 10 2018 001 057 A1 discloses a method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell.
  • a silicon solar cell is electrically biased against its forward direction and scanned with a point light source.
  • a treatment current flow with a current density of the order of magnitude of 200 A / cm 2 to 20,000 A / cm 2 is generated in the respective illuminated sub-area of the solar cell.
  • the point light source is guided over the solar cell in such a way that the treatment current flow acts on the partial area for 10 ns to 10 ms.
  • This current flow caused by the interaction of the lighting and the voltage directed against the forward direction of the silicon solar cell results in an improvement in the ohmic contact behavior between the contact grid and the emitter layer of the silicon solar cell.
  • the solar cell has to be electrically characterized after the method has been applied.
  • a characterization can be, for example, the recording of the IU characteristic curve of the solar cell under irradiation in a sun simulator, the improvement in the contact behavior being derived from the series resistance of the silicon solar cell determined from the IU characteristic curve.
  • a measurement of the solar cell before and after the application of the known method makes the processing of the solar cells complex overall.
  • the application of the method to improve the ohmic contact behavior of individual solar cells can also lead to damage, since, for example, different parameters (for example a shorter exposure time of the current flow) would have to be set for individual subregions of these solar cells than for the rest of these solar cells.
  • the ohmic contact behavior between the contact grid and the emitter layer of the silicon solar cell can vary locally, which in principle entails a corresponding change in the parameters when using the known method. With the known method, such local variations of the parameters can be set. However, when the known method is used, the areas of the silicon solar cell in which a corresponding local variation of the parameters is necessary are not known.
  • the object of the invention is to improve the method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell.
  • possible damage due to the use of unfavorable method parameters should be recognized.
  • this object is achieved with a method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell with the features of claim 1.
  • Advantageous refinements are shown in claims 2 to 20.
  • a silicon solar cell with the emitter layer, the contact grid and a back contact is first provided.
  • a contacting device and a voltage source are used to apply a voltage, which is directed against the forward direction of the silicon solar cell and is smaller than the breakdown voltage of the silicon solar cell, by means of a contacting device and a voltage source.
  • a measuring step is carried out before and / or after the treatment step.
  • an electrical voltage is applied between the contact grid and the rear contact using the voltage source and the contacting device.
  • this voltage is applied, measurement sections of sub-areas of the side of the silicon solar cell facing the sun are illuminated with the point light source, the voltage and an illumination intensity being set so that a measuring current flow is induced in the respective sub-area, which, based on the measuring section, has a current density of 1 mA / cm 2 to 500 mA / cm 2 .
  • the measuring current flow at a given voltage and lighting intensity is recorded with an ammeter and stored assigned to the respective measurement section.
  • the current intensities measured for the respective measurement section are then available for further processing, for example for process monitoring, process control or quality control. Areas with good ohmic contact behavior between the contact grid and emitter layer or low local short-circuit currents stand out due to a higher current intensity compared to areas with a poorer ohmic Contact behavior. Since the current intensities are stored assigned to the respective measurement section and / or treatment section, spatially resolved information on the electrical properties of the silicon solar cell is available. This spatially resolved information can then be used as control variables for the treatment step. In the treatment step, a lighting intensity of the point light source and / or an exposure time of the lighting and / or a level of the voltage directed against the forward direction of the silicon solar cell during the lighting can be adapted to influence the treatment current flow.
  • the voltage applied in the measurement step is directed against the forward direction of the silicon solar cell and its amount is lower than the breakdown voltage of the silicon solar cell or the voltage applied in the measurement step is directed in the forward direction of the silicon solar cell.
  • the respective treatment current flow is also recorded with the current measuring device for at least some of the illuminated treatment sections during the treatment step and stored assigned to the respective treatment section.
  • the acquisition of the strength of the measuring current flow and the acquisition of the strength of the treatment current flow can optionally take place with respect to one another.
  • a measuring step can only be carried out before the treatment step, without the treatment current also being recorded in the treatment step and without the treatment step being followed by a further measuring step.
  • the treatment current flow can also only be recorded in the treatment step, without a measuring step occurring upstream or downstream of the treatment step at all. It is also possible for a measurement step to take place before and after the treatment step and for the treatment current flow to be recorded in the treatment step or for measurement current flows to be recorded only in the measurement steps preceding and following the treatment step without treatment currents being recorded in the treatment step.
  • the recorded and stored values of the treatment current flows are then available for further processing, for example for process monitoring, process control or quality control.
  • the strength of the measuring current flow is detected in the measuring step for a given voltage and a given lighting intensity. It is well known that an electrical measurement can be made even with constant current and Detection of the respective voltage can take place, so that the measuring step of the method according to the invention can also be carried out in such a way that a constant current flow is specified and the respective electrical voltage is recorded with a voltmeter and stored assigned to the respective measurement section or treatment section. Both forms of measurement are therefore to be regarded as equivalent in the subject matter of the invention.
  • the method according to the invention is also not limited to the storage of the current strengths of the measurement current flows or treatment current flows assigned to the respective measurement section or treatment section.
  • the storage can also take place in a converted form, for example as a current density, with the respective current strength being offset against the area of the measurement section, for example.
  • the current strength is stored as a resistance value based on the applied voltage, for example.
  • the voltage source and the contacting device in the measuring step can be the same as those used in the treatment step. This has the advantage that no further contacting device is necessary. However, the invention is not limited to this. In principle, a different contacting device and / or a different voltage source than the one used for recording the treatment current can also be used to record the measurement current flow. With regard to the point light source, too, it is of course advantageous to use the same point light source both in the treatment step and in the measuring step, although the invention is not limited to this and, in principle, different point light sources can also be used.
  • a recording of the measurement current flows after the treatment step can be used, for example, as a quality feature for the further processing of the silicon solar cell in the solar module.
  • the improvement in the ohmic contact behavior achieved by the treatment step can be determined in a spatially resolved manner.
  • An improvement in the ohmic contact behavior becomes visible with constant parameters for voltage and lighting intensity as an amplification of the measuring current flow.
  • the locally assigned treatment current flows measured in the treatment step can also be used for setting the parameters of the treatment step itself.
  • the current intensity assigned to a treatment section can be used as a control variable for setting the lighting intensity of the point light source and / or the exposure time of the lighting and / or the level of the voltage directed against the forward direction of the silicon solar cell when illuminating a subsequent treatment section in the same treatment step.
  • a first current intensity and, laterally, a second current intensity is recorded with the current measuring device and both current intensities are stored assigned to the treatment section. From these two current intensities, a current intensity gradient can then be calculated for the respective treatment section, which gradient can be used as a measure for the improvement of the ohmic contact behavior through the treatment step for each treatment section.
  • the current intensity gradient can be used either within a treatment step for regulating the parameters of a subsequent treatment section or also for a completely subsequent treatment step.
  • a reverse current of the silicon solar cell can also be recorded in the upstream and / or downstream measurement step and / or in the treatment step when the silicon solar cell is not illuminated and stored assigned to the respective treatment sections or measurement sections.
  • the value of the reverse current is suitable for evaluating possible damage to the silicon solar cell through application of the treatment step with unfavorable parameters.
  • the reverse current is assessed on the basis of a reference value which is compared, for example, with a reverse current value obtained from an electrical characterization of the silicon solar cell (eg recording an IU characteristic) obtained from an upstream electrical characterization of the method according to the invention.
  • the reverse current measured when applying the method according to the invention is higher than the reverse current value generated from the previous electrical characterization, this can be an indication of damage to the silicon solar cell due to unfavorable parameters when using the improvement method.
  • damage can be, for example, the generation of short circuits within the silicon solar cell, which can be seen in an increase in the reverse current of the silicon solar cell.
  • a reference value can also be a reverse current detected in the measurement step preceding the treatment step. Or the reverse current is measured in the treatment step before at least some of the treatment sections are illuminated.
  • deviations of the reverse current from the respective reference reverse current can also be used as a control variable for setting the lighting intensity and / or the exposure time of the lighting and / or the level of the voltage directed against the forward direction of the silicon solar cell when illuminating at least part of the treatment sections.
  • a sorting criterion for the silicon solar cell can also be created so that corresponding silicon solar cells can be withdrawn from the further processing method, for example in order not to to be installed in a solar module.
  • the voltage directed opposite to the forward direction which is smaller in magnitude than the Breakdown voltage of the silicon solar cell can also be varied.
  • a reverse current is thus determined for each predetermined voltage and is stored assigned to the respective measurement section or treatment section.
  • the type of damage to the silicon solar cell can be identified via the variation of the voltage directed against the forward direction, so that, for example, a distinction can be made between damage in the form of a crack in the silicon solar cell and damage resulting in increased charge carrier recombination.
  • the wavelength of the light radiation emitted by the point light source is advantageously changed and the current intensities for this light radiation are also recorded in the measurement step and / or treatment step and stored assigned to the respective section.
  • one and the same current measuring device can advantageously be used.
  • the invention is not restricted to this. Different measuring devices can also be used depending on the measuring range.
  • the current strengths of the treatment currents and the current strengths of the reverse currents are different by orders of magnitude, so that the use of two current measuring devices optimized for the respective area can be useful here.
  • the silicon solar cell with the emitter layer, the contact grid and a back contact is first provided.
  • This can, for example, be a polycrystalline silicon solar cell with the dimensions 15.7 cm x 15.7 cm, which is positioned on a processing table.
  • the contact grid is then electrically connected to one pole of a voltage source and the back contact to the other pole of the voltage source by means of a contacting device.
  • the contacting device can, for example, have spring contact pins which rest on the contact grid or the back contact of the silicon solar cell and are connected to the voltage source via cable connections.
  • a voltage directed in the forward direction of the silicon solar cell is applied via the contacting device with the voltage source between the contact grid and the rear contact.
  • a point light source can be, for example, a laser or a focused white light source.
  • the lighting induces a measuring current flow in the respective sub-area, the applied voltage and an illumination intensity of the point light source being set so that this measuring current flow has a current density of 1 mA / cm 2 to 500 mA / cm 2 in relation to the measuring section.
  • the light emitted by the point light source is now guided from measurement section to measurement section, with the applied voltage and the illumination intensity of the point light source being kept constant.
  • a current measuring device ammeter
  • the current flow in the silicon solar cell is measured for each measurement section, with the recorded current strengths of the respective measurement current flow being stored assigned to the respective measurement section.
  • the assignment of the measured current intensity to the respective measurement section takes place in that for the respective current intensity, for example, the position coordinates of this measurement section are also stored on the side of the silicon solar cell facing the sun.
  • a voltage directed counter to the forward direction of the silicon solar cell which is lower in magnitude than the breakdown voltage of the silicon solar cell, is then applied with the voltage source and the contacting device.
  • the point light source already used in the measuring step is then guided over the side of the silicon solar cell facing the sun, whereby treatment sections of partial areas of the side facing the sun are illuminated.
  • the lighting induces a current flow in the respective sub-area.
  • this current flow has a current density of 200 A / cm 2 to 20,000 A / cm 2 and is effective for 10 ns to 10 ms on the sub-area.
  • the current intensity and the exposure time are set within this parameter window via a movement speed of the point light source in relation to the silicon solar cell, an illumination intensity of the point light source and the level of the voltage directed against the forward direction of the silicon solar cell (but with a lower amount compared to the breakdown voltage).
  • This treatment step significantly improves the ohmic contact behavior between the contact fingers and the emitter layer of the silicon solar cell, particularly in areas that have high contact resistances between the contact grid and the emitter layer before the treatment step.
  • a further second measuring step analogous to the first measuring step, is carried out.
  • the current intensities of the measuring current flows are again recorded and stored assigned to the respective measuring section.
  • For each measurement section there is now a value for the strength of the measurement current flow before the treatment step and a value for the strength of the measurement current flow after the treatment step. From the change in the values of the respective measurement current, a spatially resolved quantification for the improvement of the ohmic contact behavior between the contact grid and the emitter layer is obtained.
  • the change calculated from the measurement current flows can also be stored and assigned to the respective measurement section.
  • the silicon solar cell can then be fed to a further treatment step.
  • this further treatment step for example, only those treatment segments are processed in which the corresponding measurement segments in the measurement steps have not yet reached the specified change in the measurement current flows and / or a specified target value for the measurement current flow.
  • the voltage applied in the measuring steps can either be directed against the forward direction of the silicon solar cell and its amount is lower than the breakdown voltage of the silicon solar cell or the voltage applied in the measuring steps is directed in the forward direction of the silicon solar cell.
  • the measuring steps are carried out analogously to the first exemplary embodiment.
  • the parameters for the voltage directed against the forward direction and the illumination intensity of the point light source are different based on those in the first Measurement step adjusted current strengths of the measurement current flows. Areas that show low amperage of the measuring current flow in the first measuring step are processed in the treatment step with a stronger treatment current flow and / or a longer exposure time of the treatment current flow than areas that already show a high amperage of the measuring current flow.
  • the increase in the flow of treatment current can be achieved by increasing the voltage directed against the forward direction and / or increasing the illumination intensity of the point light source.
  • An increase in the exposure time of the treatment current flow is controlled via a dwell time of the point light source at the respective treatment section.
  • the measuring current flows are recorded in the measuring steps when the measuring sections are illuminated and the treatment step is carried out accordingly.
  • the side of the silicon solar cell facing the sun is left unilluminated and, with the voltage source, a voltage directed opposite to the forward direction, which is lower in magnitude than the breakdown voltage of the silicon solar cell, via the contacting device applied between the contact grid and the back contact, so that when the voltage is applied, a reverse current of the silicon solar cell is detected with the ammeter.
  • This reverse current is then stored and assigned to the respective measurement sections.
  • the respective reverse current can then be used as a characteristic value for possible damage to the silicon solar cell as a result of the treatment step.
  • the reverse currents ascertained in the measured measurement sections are compared with a reference reverse current obtained from an electrical characterization of the silicon solar cell upstream of the method.
  • This electrical characterization can be, for example, the usual recording of the IU characteristic in the production process of the silicon solar cell when determining the solar cell efficiency.
  • the reverse current is advantageously measured in the measuring step before or after the illumination of all measuring sections.
  • the change in the reverse current determined in the second measuring step compared to the previously determined reference reverse current serves as a measure of the damage to the silicon solar cell generated by the treatment step. If the reverse current of the silicon solar cell increases after the treatment step, it can be concluded that the silicon solar cell has been damaged by the treatment step.
  • the procedure is carried out analogously to the third exemplary embodiment.
  • the reference reverse current is generated in the first measurement step.
  • the second measurement step before and / or after the illumination, at least a first part of the measurement sections, the side of the silicon solar cell facing the sun, is left unilluminated, so that when the voltage is applied, a reverse current of the silicon solar cell is recorded with the current measuring device.
  • the change in the reverse current detected in the second measuring step compared to the reverse current detected in the first measuring step then serves as a measure for possible damage to the silicon solar cell caused by the treatment step.
  • the actual current strengths of the treatment current flows are also recorded in the treatment step for at least some of the illuminated treatment sections and are stored assigned to the respective treatment section.
  • the current strength is recorded at the end of the time the current flow has applied to the respective sub-area.
  • the treatment currents recorded for the treatment sections serve as a measure of the improvement in the ohmic contact behavior between the contact grid and the emitter layer achieved by the treatment step.
  • the treatment sections are processed with identical parameters for the voltage and illumination intensity of the point light source directed against the forward direction of the silicon solar cell, areas with a better ohmic contact ratio between the contact grid and the emitter layer become visible because the current strengths are higher at the end of the treatment of the respective treatment section.
  • the treatment currents recorded and stored for the individual treatment sections are used, for example, in the further processing of the silicon solar cell as a quality feature.
  • the recorded and stored treatment currents can also be used to carry out a further treatment step, for example, in the further treatment step, the areas with low measured treatment currents are specifically processed again with changed parameters.
  • the changed parameters here are again the illumination intensity of the point light source and / or the exposure time of the illumination and / or the level of the voltage directed against the forward direction of the silicon solar cell.
  • a reference blocking current for the comparison with the blocking current determined in the second measuring step can also be determined in the treatment step.
  • the side of the silicon solar cell facing the sun is left unilluminated and the reverse current is detected when the voltage is applied, which is directed against the forward direction of the silicon solar cells.
  • both the reference blocking current and that after the processing of the treatment sections can only be measured in the treatment step.
  • the side of the silicon solar cell facing the sun is left unilluminated and the reverse current is detected when the voltage directed against the forward direction is applied.
  • the first part of the treatment sections is then gradually illuminated.
  • the side of the silicon solar cell facing the sun is again left unilluminated and the reverse current is detected again.
  • the value of the reverse current detected before the illumination of the first part of the treatment sections then serves as a reference value for the reverse current detected after the illumination of the first part of the treatment sections.
  • the treatment sections lying along each line are illuminated one after the other.
  • the point light source is switched off or, when switched on, it is led away from the side of the solar cell facing the sun over the edge of the silicon solar cell, so that the side of the solar cell facing the sun is completely unlit and the reverse current can be detected when the voltage directed against the forward direction is applied.
  • the reverse current detected after a row has been illuminated in each case then serves as the reference reverse current for the reverse current generated after the lighting of a subsequent row. In this way, possible damage to the silicon solar cell can even be assigned to the processing of a specific line (or treatment sections).
  • the processing takes place analogously to the seventh exemplary embodiment.
  • a change in the reverse currents generated before and after the illumination of a line is used as a control variable for setting the parameters (illumination intensity of the point light source, exposure time of the illumination, level of the voltage directed against the forward direction) for the illumination of a following line in the processing step. If, for example, an increase in the reverse current is detected, the parameters (for example exposure time of the lighting) are changed when the following line is illuminated so that a further increase in the reverse current is avoided.
  • the voltage directed against the forward direction can also be varied, provided this is still lower in terms of amount than the breakdown voltage of the silicon solar cell.
  • a reverse current is thus determined for each predetermined voltage and is stored assigned to the respective measurement section or treatment section.
  • the treatment current flows recorded in the treatment step (cf. fifth exemplary embodiment) of the treatment sections are used to regulate the parameters in the processing of the following treatment sections.
  • the regulation takes place in such a way that the treatment current flow recorded during the processing of a treatment section is compared with a reference value. If the recorded treatment current flow is less than this reference value, for example, this can be a sign of an inadequate improvement in the ohmic contact behavior between the contact grid and the emitter layer. In a treatment section following this, the parameters for the illumination of this treatment section are therefore adapted accordingly.
  • a first current intensity is initially used here for each treatment section when it is illuminated, followed by a second Amperage is detected with the ammeter and both amperages are stored assigned to the treatment section.
  • the change (gradient) in the current strength is used as a measure for improving the ohmic contact behavior between the contact grid and the emitter layer.
  • the increase in the current intensity during the illumination of a treatment section indicates an improvement in the ohmic contact behavior. An only slight or no increase in the current strength indicates only a slight or no improvement in the ohmic contact behavior.
  • the change in the current intensity during the illumination of a treatment section is therefore used to regulate the parameters (illumination intensity of the point light source, exposure time of the lighting, level of the voltage directed against the forward direction) of at least one subsequent treatment section.
  • the gradient of the current intensity is also stored and assigned to the respective treatment segment.
  • the wavelength of the light radiation emitted by the point light source is optionally changed, the reflected portion being recorded for predetermined wavelengths and stored assigned to the respective section.
  • the wavelength of the light radiation emitted by the point light source is also optionally changed when the current strengths of the measurement current flows and / or the treatment current flows are recorded, with the current strengths of the measurement current flows and / or the treatment current flows being recorded for specified wavelengths and stored assigned to the respective section.

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  • Photovoltaic Devices (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Sustainable Energy (AREA)

Abstract

L'invention concerne un procédé pour améliorer le comportement de contact ohmique entre une grille de contact et une couche d'émission d'une cellule solaire au silicium. Une étape de traitement de ce procédé, au cours de laquelle une tension de polarisation est utilisée et la cellule solaire au silicium est éclairée, consiste à induire un flux de courant de traitement présentant une densité de courant comprise entre 200 A/cm2 et 20.000 A/cm2, par rapport à la partie de traitement. L'objectif de cette invention est d'améliorer le comportement de contact ohmique entre une grille de contact et une couche d'émission d'une cellule solaire au silicium. En particulier, lors de la mise en œuvre du procédé, il doit être possible de quantifier l'amélioration apportée par le procédé. En outre, lors de la mise en œuvre du procédé, une possible détérioration liée à l'utilisation de paramètres de procédé non favorables doit pouvoir être détectée. Pour atteindre cet objectif, avant et/ou après l'étape de traitement, une étape de mesure est effectuée. Lors de cette étape de mesure, un éclairage de la face des cellules solaires au silicium orientée vers le soleil et une tension de polarisation permettent d'induire un flux de courant de mesure présentant une intensité de courant comprise entre 1 mA/cm2 et 500 mA/cm2. De plus, une intensité de courant dudit flux de courant de mesure est détectée au moyen d'un appareil de mesure de courant et stockée de manière associée à la partie de mesure respective.
EP21735846.4A 2020-04-17 2021-04-01 Procédé pour améliorer le comportement de contact ohmique entre une grille de contact et une couche d'émission d'une cellule solaire au silicium Pending EP4136680A1 (fr)

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DE102020002335.5A DE102020002335B4 (de) 2020-04-17 2020-04-17 Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Silizumsolarzelle
PCT/DE2021/000070 WO2021209082A1 (fr) 2020-04-17 2021-04-01 Procédé pour améliorer le comportement de contact ohmique entre une grille de contact et une couche d'émission d'une cellule solaire au silicium

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EP4136680A1 true EP4136680A1 (fr) 2023-02-22

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US (2) US12389708B2 (fr)
EP (1) EP4136680A1 (fr)
JP (1) JP7724237B2 (fr)
KR (1) KR102841328B1 (fr)
CN (1) CN115769386A (fr)
DE (1) DE102020002335B4 (fr)
TW (1) TWI906285B (fr)
WO (1) WO2021209082A1 (fr)

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DE102023104175B4 (de) * 2023-02-20 2024-11-21 Ce Cell Engineering Gmbh Verfahren zur Verbesserung eines Kontaktwiderstands einer Mehrfach-Solarzelle

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JP2023521992A (ja) 2023-05-26
US12389708B2 (en) 2025-08-12
DE102020002335B4 (de) 2022-02-24
CN115769386A (zh) 2023-03-07
TWI906285B (zh) 2025-12-01
DE102020002335A1 (de) 2021-10-21
KR20230005884A (ko) 2023-01-10
US20230335668A1 (en) 2023-10-19
KR102841328B1 (ko) 2025-07-31
US20250351614A1 (en) 2025-11-13
TW202145593A (zh) 2021-12-01
JP7724237B2 (ja) 2025-08-15

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