EP4200625C0 - Procédé de mesure d'un champ magnétique extérieur par au moins un point mémoire magnétique - Google Patents

Procédé de mesure d'un champ magnétique extérieur par au moins un point mémoire magnétique

Info

Publication number
EP4200625C0
EP4200625C0 EP21762734.8A EP21762734A EP4200625C0 EP 4200625 C0 EP4200625 C0 EP 4200625C0 EP 21762734 A EP21762734 A EP 21762734A EP 4200625 C0 EP4200625 C0 EP 4200625C0
Authority
EP
European Patent Office
Prior art keywords
measuring
memory point
magnetic field
external magnetic
magnetic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP21762734.8A
Other languages
German (de)
English (en)
Other versions
EP4200625A1 (fr
EP4200625B1 (fr
Inventor
Ricardo Sousa
Ioan-Lucian Prejbeanu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Centre National de la Recherche Scientifique CNRS
Publication of EP4200625A1 publication Critical patent/EP4200625A1/fr
Application granted granted Critical
Publication of EP4200625C0 publication Critical patent/EP4200625C0/fr
Publication of EP4200625B1 publication Critical patent/EP4200625B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/10—Measuring sum, difference or ratio
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16528—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values using digital techniques or performing arithmetic operations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/30—Measuring the maximum or the minimum value of current or voltage reached in a time interval
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • G01R33/0029—Treating the measured signals, e.g. removing offset or noise
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • G01R33/0035—Calibration of single magnetic sensors, e.g. integrated calibration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/20—Spin-polarised current-controlled devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
EP21762734.8A 2020-08-24 2021-08-24 Procédé de mesure d'un champ magnétique extérieur par au moins un point mémoire magnétique Active EP4200625B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2008638A FR3113519B1 (fr) 2020-08-24 2020-08-24 Procédé de mesure d’un champ magnétique extérieur par au moins un point mémoire magnétique
PCT/EP2021/073330 WO2022043292A1 (fr) 2020-08-24 2021-08-24 Procédé de mesure d'un champ magnétique extérieur par au moins un point mémoire magnétique

Publications (3)

Publication Number Publication Date
EP4200625A1 EP4200625A1 (fr) 2023-06-28
EP4200625C0 true EP4200625C0 (fr) 2024-10-09
EP4200625B1 EP4200625B1 (fr) 2024-10-09

Family

ID=74045590

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21762734.8A Active EP4200625B1 (fr) 2020-08-24 2021-08-24 Procédé de mesure d'un champ magnétique extérieur par au moins un point mémoire magnétique

Country Status (5)

Country Link
US (1) US12292486B2 (fr)
EP (1) EP4200625B1 (fr)
KR (1) KR102813503B1 (fr)
FR (1) FR3113519B1 (fr)
WO (1) WO2022043292A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12405323B2 (en) 2023-12-19 2025-09-02 Western Digital Technologies, Inc. Magnetic sensor half-bridge based on inverse spin hall effect with reduced thermal drift

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7038552B2 (en) * 2003-10-07 2006-05-02 Analog Devices, Inc. Voltage controlled oscillator having improved phase noise
JP2008112841A (ja) * 2006-10-30 2008-05-15 Tdk Corp 磁気抵抗効果素子、薄膜磁気ヘッド、基体、ウェハ、ヘッドジンバルアセンブリ、ハードディスク装置
FR2918761B1 (fr) * 2007-07-10 2009-11-06 Commissariat Energie Atomique Capteur de champ magnetique a faible bruit.
US20110169488A1 (en) * 2010-01-08 2011-07-14 Everspin Technologies, Inc. Method and structure for testing and calibrating magnetic field sensing device
US9384812B2 (en) * 2014-01-28 2016-07-05 Qualcomm Incorporated Three-phase GSHE-MTJ non-volatile flip-flop
JP6455806B2 (ja) * 2015-04-15 2019-01-23 Tdk株式会社 磁気抵抗効果発振器
US10720570B2 (en) * 2017-06-12 2020-07-21 Western Digital Technologies, Inc. Magnetic sensor using spin hall effect
FR3077917B1 (fr) * 2018-02-15 2022-02-04 Commissariat Energie Atomique Empilement magnetique, jonction tunnel, point memoire et capteur comportant un tel empilement

Also Published As

Publication number Publication date
EP4200625A1 (fr) 2023-06-28
KR102813503B1 (ko) 2025-05-27
WO2022043292A1 (fr) 2022-03-03
KR20230104591A (ko) 2023-07-10
CN116324457A (zh) 2023-06-23
EP4200625B1 (fr) 2024-10-09
FR3113519B1 (fr) 2022-09-02
FR3113519A1 (fr) 2022-02-25
US12292486B2 (en) 2025-05-06
US20230358826A1 (en) 2023-11-09

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