EP4231661A1 - Dispositif mems ayant une structure de support comprenant une pluralité de régions de faces latérales décalées angulairement - Google Patents

Dispositif mems ayant une structure de support comprenant une pluralité de régions de faces latérales décalées angulairement Download PDF

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Publication number
EP4231661A1
EP4231661A1 EP22157894.1A EP22157894A EP4231661A1 EP 4231661 A1 EP4231661 A1 EP 4231661A1 EP 22157894 A EP22157894 A EP 22157894A EP 4231661 A1 EP4231661 A1 EP 4231661A1
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EP
European Patent Office
Prior art keywords
mems
side face
carrier structure
mems device
face region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22157894.1A
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German (de)
English (en)
Inventor
Konstantin TKACHUK
Marc Fueldner
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Infineon Technologies AG
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Infineon Technologies AG
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Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to EP22157894.1A priority Critical patent/EP4231661A1/fr
Publication of EP4231661A1 publication Critical patent/EP4231661A1/fr
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • MEMS microelectromechanical system
  • SNR signal-to-noise ratio
  • MEMS microphones are limited partly by the size of sensitive elements.
  • dimensions of a MEMS die may define capacitances in capacitive MEMS microphones.
  • One approach to overcome this limit is an integration of multiple MEMS in one package.
  • Fig. 18 shows a schematic side view of a e.g. typical MEMS device (e.g., MEMS microphone).
  • the MEMS device 1600 comprises a MEMS die 1610, e.g. a sound transducer, and a substrate 1620, e.g. a substrate of the package, wherein the MEMS die 1610 is attached to the substrate 1620.
  • the MEMS die 1610 comprises a support structure 1612 and a membrane 1614 (e.g. + backplate, etc.) and an electrical contact 1616.
  • the support structure 1612 is clamping or holding the membrane 1614 (+ further membranes and/or backplates e.g. in case of capacitive MEMS microphones).
  • the substrate 1620 comprises a sound port 1622, e.g. an opening, for example of the packaged MEMS device.
  • a package lid and an ASIC of device 1600 are not illustrated.
  • the MEMS die 1610 may, for example, be integrated, e.g. directly, in the substrate 1620.
  • Embodiments according to the disclosure comprise a MEMS device, the MEMS device comprising a MEMS die, and a carrier structure having an inner volume, wherein the carrier structure comprises a plurality of angularly offset side face regions for providing the inner volume.
  • the MEMS die is mounted to a first side face region of the plurality of angularly offset side face regions and the MEMS die spans an opening in the first side face region.
  • a second side face region of the plurality of angularly offset side face regions, different from the first side face region forms a basis portion for mechanically coupling the carrier structure to a substrate.
  • a MEMS device comprising a carrier structure may allow to facilitate an integration of MEMS dies in the MEMS device, for example with only limited increase in required space, for example especially lateral space, e.g. parallel to a substrate of the MEMS device, e.g. a lateral space defining a footprint of the MEMS device.
  • using a carrier structure according to embodiments may allow to achieve high signal-to-noise ratios, for example even in case of highly integrated MEMS devices with many MEMS dies.
  • the carrier structure comprises an inner volume and a plurality of angularly offset side face regions for providing the inner volume.
  • At least one MEMS die is mounted to a first side face region of the plurality of angularly offset side face regions, the MEMS die spanning an opening in the first side face region.
  • the carrier structure e.g. a cubic carrier structure, for example an interposer device or an interposer structure
  • the carrier structure may be a three-dimensional framework extending itself out of a substrate plane (e.g. in an assembled state of the MEMS device, wherein the MEMS device may, for example, be attached, or bonded to a substrate).
  • additional, for example approximately or substantially perpendicular (e.g. to a substrate surface) carrier planes, in the form of the side face regions of the carrier structure, are provided, to which MEMS dies may be attached or mounted or bonded or glued.
  • MEMS dies may be integrated three-dimensionally, e.g. out of a substrate plane, for example out of a plane parallel to a substrate of the MEMS device, or a plane of the MEMS device that may be parallel to a substrate surface in an assembled state.
  • MEMS dies may be integrated in the MEMS device out of plane. This may allow usage of volumetric space of the MEMS device without increasing its footprint, for example significantly.
  • the carrier structure may comprise openings in respective side face regions, to allow for an interaction of a respective MEMS die, e.g. in the form of a transducer, with an environment of the MEMS device (e.g. via the inner volume).
  • the inner volume of the carrier structure may, for example, be coupled to an environment of the MEMS device via a port e.g. a sound port, e.g. in a substrate (e.g. coupled with the second side face region).
  • the one or more openings in the side face regions may, for example, be holes through the carrier structure (e.g. wholly through a respective side face or side wall or side structure of the carrier structure).
  • the one or more MEMS dies may share a common sound port.
  • a plurality of MEMS dies spanning respective openings in respective side face regions may share one, e.g. single, sound port, for example for an interaction (e.g. signal detection or measurement) with a surrounding of the MEMS device.
  • the MEMS device may be a, for example, high SNR, MEMS microphone with 3D integrated sensitive elements.
  • the MEMS microphone may achieve a high SNR using an integration of a plurality of MEMS dies in the form of MEMS sound transducers using the carrier structure, e.g. such that the plurality of MEMS sound transducers is 3D integrated.
  • embodiments may comprise a 3D integration of MEMS for high SNR microphones.
  • a reference plane e.g. a main surface region of a substrate
  • lateral means a direction parallel to the x- and/or y-direction or a direction parallel to (or in) the x-y-plane, wherein the term “vertical” means a direction parallel to the z-direction.
  • Fig. 1 shows a schematic side view of a MEMS device according to embodiments of the present disclosure.
  • Fig. 1 shows a MEMS device 100 comprising a MEMS die 110 and a carrier structure 120.
  • the carrier structure comprises an inner volume 121 and a plurality of angularly offset side face regions 122, 123, 124, 125 for providing the inner volume 121.
  • the MEMS die 110 is mounted to a first side face region 122 of the plurality of angularly offset side face regions. Furthermore, the MEMS die 110 spans an opening 122a in the first side face region.
  • a second side face region 123 of the plurality of angularly offset side face regions, different from the first side face region, forms a basis portion for mechanically coupling the carrier structure to a substrate.
  • the second side face region comprises an opening 123a to the inner volume 121 of the carrier structure, however it is to be noted that according to other embodiments of the disclosure such an opening 123a may not be present, the device 100 hence having a "closed" side face region 123, e.g. according to or analogously to or similar to the side face regions 124 or 125.
  • the MEMS die may, for example, be in contact with an environment of the MEMS device 100, e.g. via the opening 123a.
  • the inner volume 121 may, for example, be a closed volume.
  • a MEMS die 110 may, for example be directly in contact with an environment of the MEMS device 100.
  • the inner volume 121 may, for example, be a front volume or, e.g. in case opening 123a is not present a back volume.
  • a device 100 may comprise a cubic carrier structure, for example as shown in Fig. 1 , or a pyramidal carrier structure, for example having less side face regions than shown in Fig. 1 .
  • the carrier structure may, for example, be a polyhedron.
  • the carrier structure may, for example, be a monolithic and/or integral carrier structure.
  • the carrier structure may be made or fabricated from one piece.
  • the carrier structure may be etched or manufactured from one workpiece, e.g. from a one-piece structure, e.g. in contrast to a carrier structure comprising a plurality of partial structures that were bonded or wielded or glued or soldered together or that were, for example, connected to each other with hinges and/or latches.
  • the carrier structure may be produced with low effort, and for example with good mechanical properties, e.g. with good mechanical rigidity.
  • the carrier structure may be an injection molded carrier structure and/or an additively manufactured carrier structure (e.g. a 3-D printed carrier structure).
  • a main idea is the integration of MEMS dies 110 out of plane, for example, according to Fig. 1 out of the x-y plane, such that, in an assembled state, the MEMS die 110 is out of plane to a substrate.
  • the MEMS die 110 may, for example, be substantially perpendicular to a substrate plane, e.g. the x-y plane, e.g. with a tolerance of less than 1° or of less than 5° or of less than 10° (e.g. measured to the y-z plane).
  • device 100 may comprise a plurality of MEMS dies 110, attached to different side face regions of the device.
  • the side face regions, having MEMS dies 110 attached to may comprise openings, e.g. analogously to side face region 122 with opening 122a.
  • a footprint e.g. an area of the MEMS device 100 with respect to the x-y plane, may not be increased or may, for example, be increased only in a limited way, whilst providing a plurality of, e.g. out of plane, MEMS dies.
  • MEMS device 100 being MEMS microphone
  • MEMS dies 110 being MEMS sound transducers
  • a high SNR with a e.g. very low footprint may be achieved.
  • the second side face region 123 and the first side face region 122 may be non-parallel to each other.
  • the second side face region 123 and the first side face region 122 may be non-parallel and adjacent to each other.
  • MEMS die 110 may, for example, be attached to side face region 124 instead of side face region 122.
  • a MEMS die can, for example, be arranged on top of the carrier structure, e.g. the cube.
  • This side face region, e.g. 124 may, for example, be parallel, or substantially parallel, to the second, e.g. bottom side face region, e.g.
  • second side face region e.g. the coupling side face region, and any side face region where a MEMS die or for example an ASIC die are provided, may be different planes or may, for example be in different planes.
  • normal vectors of adjacent side face regions of the plurality of angularly offset side face regions may be non-parallel.
  • a vector perpendicular to the y-z plane for the side face region 122 and a vector perpendicular to the x-y plane for the side face region 124 may be non-parallel.
  • adjacent side face regions may comprise an angular offset, for example such that their respective normal vectors are non-parallel.
  • Fig. 2 shows a schematic side view of a MEMS device with additional optional features, according to embodiments of the present disclosure.
  • Fig. 2 shows a MEMS device 200 with at least one MEMS die 210, e.g. a sound transducer, and a carrier structure 220.
  • the carrier structure 220 comprises a plurality of angularly offset side face regions 226, for providing an inner volume 221, as an example, the side face regions 222, 223, 224 and 225, wherein the MEMS die 210 is mounted or attached to a side face region 222, the side face region 222 comprising an opening 222a.
  • a MEMS device 200 may comprise a plurality 226 of side face regions, e.g. faces, including or comprising at least one side face region 222 onto which a MEMS die 210 is provided.
  • other side face regions e.g. side face region 223, side face region 224 and/or side face region 225 may comprise openings 223a, 224a and 225a respectively.
  • one or even each other side face region e.g. apart from a second side face region 223 configured to be coupled with a substrate
  • can be configured to optionally accommodate a further or another semiconductor chip e.g., additional MEMS dies and/or ASIC dies.
  • one or more ASIC dies could be provided on a respective side face region of the structure, and/or on the substrate, the substrate for example being a package substrate, e.g. a substrate comprising packaged device 200.
  • integrated circuitry e.g. in the form of an ASIC may be mounted to side face regions having no opening or to side face regions having an opening, e.g. besides a MEMS die spanning said opening.
  • the MEMS die 210 comprises a support structure 212 (e.g. of the individual MEMS die 210) and a membrane 214 (e.g. comprising a backplate and/or further elements).
  • the membrane 214 may, for example be an active part of the MEMS die 210 or the MEMS device 200.
  • the MEMS device 200 comprises an electrical contact 230.
  • the electrical contact may be configured to connect the MEMS die 210 with circuitry of the MEMS device 200 (not shown) or external circuitry, e.g. of a package comprising the MEMS device 200.
  • the MEMS device 200 comprises a substrate 240, e.g. a carrier substrate.
  • This substrate may as well be a substrate of a package, e.g. a package comprising the device 200.
  • substrate 240 comprises a sound port 242, e.g. a common and/or shared sound port, e.g. a common or shared opening, for example, of the packaged MEMS device.
  • Fig. 3a shows a schematic side view of a first MEMS device with optional features, according to embodiments of the present disclosure.
  • MEMS device 300a comprises a carrier structure 320 having an inner volume 321 and angularly offset side face regions 322, 323, 324 and 325 for providing said inner volume 321.
  • the first side face region 322 comprises an opening 322a and, as an optional feature, a further opening 322b.
  • the MEMS device 300a comprises a MEMS die 310 that is mounted to the first side face region 322, spanning the opening 322a.
  • device 300a comprises a further MEMS die 310a that is mounted to the first side face region 322 and that spans the further opening 322b.
  • more than one MEMS die may be mounted or attached or bonded or glued to a respective side face region of the plurality of side face regions of the carrier structure. This may allow to further increase the packing density of MEMS dies in a MEMS device according to embodiments. It is to be noted, that to more than one side face regions, a plurality of MEMS dies may be mounted.
  • MEMS die 310a may optionally span opening 322a.
  • the second side face region 323 of the plurality of angularly offset side face regions forms a basis portion for mechanically coupling the carrier structure 320 to a substrate.
  • side face region 323 comprises an opening 323a.
  • the MEMS device 300a may comprise the substrate 340 and hence, the carrier structure 320 may be mechanically coupled or bonded or glued or attached to the substrate 340 via the second side face region 323.
  • the MEMS device 300a comprises an additional MEMS die 310b, wherein the additional MEMS die 310b is mounted to the third side face region 324 of the plurality of angularly offset side face regions, and wherein the additional MEMS die 310b spans an opening 324a in the third side face region 324.
  • the MEMS device 300a comprises an integrated circuitry 360, wherein the integrated circuitry is mounted to a side face region, as an example, as shown in Fig. 3a , to side face region 325, of the plurality of angularly offset side face regions.
  • the integrated circuitry 360 is electrically coupled to the MEMS die 310 and/or any of the other MEMS dies 310a, 310b, and/or the integrated circuitry 360 may be configured to process at least one signal provided by the MEMS die 310 (and/or 310a, 310b) and/or the integrated circuitry 360 may be configured to provide a stimulus signal to the MEMS die 310 (and/or 310a, 310b).
  • the substrate 340 comprises a sound port 342.
  • the sound port may allow a coupling of the inner volume 321 with an environment of the MEMS device 300a.
  • one of the MEMS dies 310, 310a 310b may, for example comprise a piezoelectric MEMS sound transducer and/or a capacitive MEMS sound transducer.
  • an environmental influence e.g. a sound wave, may enter the inner volume 321 of the carrier structure 320 via the optional sound port 342, where it may be detected using at least one of the MEMS dies 310, 310a, 310b.
  • At least of the MEMS dies 310, 310a 310b may comprise a sound transducer, an inertial sensor, a pressure sensor and/or a gas sensor.
  • device 300a may comprise MEMS dies mounted to any of the side face regions that do not span an opening in the respective side face region.
  • one of the MEMS dies 310, 310a or 310b may, for example, be an inertial sensor that may not require a contact with an environmental gas in order to provide a measurement.
  • such a sensor may be mounted or attached to a side face region without spanning a respective opening.
  • the MEMS device 300a further comprises a lid 350, wherein the lid 350 is mechanically coupled to the substrate.
  • the lid may form an acoustically sealed back volume.
  • the MEMS device 300a may, for example, be a MEMS microphone and the inner volume 321 of the carrier structure 320 may form a respective front volume of the MEMS microphone.
  • Fig. 3a may show a bottom-port configuration of a MEMS microphone according to embodiments.
  • An inventive structure according to Fig. 3a may allow to provide a big back volume in order to record a received acoustic signal with a good signal-to-noise ratio.
  • Fig. 3b shows a schematic side view of a second MEMS device with optional features, according to embodiments of the present disclosure.
  • MEMS device 300b comprises a substrate 340b without a sound port.
  • lid 350b that may be mechanically coupled to the substrate 340b, comprises a sound port 352.
  • the lid 350b coupled to the substrate 340b, may form a front volume, e.g. of the MEMS microphone.
  • the inner volume 321b of the carrier structure 320 may form a back volume of the MEMS microphone.
  • Fig. 3a may show a top-port configuration of a MEMS microphone according to embodiments.
  • Fig. 3c shows a schematic side view of a third MEMS device with optional features, according to embodiments of the present disclosure.
  • the MEMS dies 310, 310a and 310b the integrated circuitry 360 are arranged in the inner volume 321c of the carrier structure 320.
  • MEMS die 310 is mounted to a first side face region 326, spanning an opening 326a
  • MEMS die 310a is mounted to the first side face region 326 as well, optionally spanning a further opening 326b in the first side face region
  • MEMS die 310b is mounted to a third side face region 328 spanning a respective opening 328a.
  • the integrated circuitry e.g. in general an ASIC, is mounted to a fourth side face region 329.
  • a second side face region 327, optionally comprising an opening 327a, is coupled mechanically with substrate 340c.
  • MEMS dies and/or integrated circuitry may be mounted to an inside of the carrier structure or to an outside of the carrier structure (e.g. as shown in Figs. 3a-c ). Hence any combination of the different attachments may be realized according to embodiments.
  • Fig. 3d shows a schematic side view of a fourth MEMS device with optional features, according to embodiments of the present disclosure.
  • MEMS device 300d comprises carrier structure 322d comprising a plurality of angularly offset side face regions 322d, 323d, 324d, 325d for providing the inner volume 321d.
  • MEMS device 300d comprises a plurality of MEMS dies 310, 310c, wherein each MEMS die is mounted to a different side face region of the plurality of angularly offset side face regions.
  • the side face regions 322d, 325d, to which the plurality of MEMS dies are mounted to are substantially perpendicular to the second side face region 323d.
  • a MEMS dies 310b may as well be mounted to side face regions 324d substantially parallel to the second side face region 323d.
  • Fig. 4 shows a schematic three-dimensional view of examples of manufacturing steps for a MEMS device according to embodiments of the disclosure.
  • Fig. 4 may show an example for a main technical implementation of an embodiments according to the disclosure.
  • a plurality of MEMS dies 410, 410a, 410b, 410c may be attached or mounted to a carrier structure 420 ("MEMS (die) to carrier (structure) attach").
  • the carrier structure may comprise openings 422a, 423a, 424a, 425a, 426a in angular offset side face regions 422, 423, 424, 425, 426 providing an inner volume.
  • the openings may have any geometrical shape suitable, e.g. as shown a round shape.
  • a further side face region 427 may, for example be a top side face region.
  • the MEMS dies 410, 410a, 410b, 410c may be mounted to respective side face regions 422, 424, 425, 426, such that they span a respective opening 422a, 424a, 425a, 426a.
  • the carrier structure 420 may be attached or soldered or mounted to a substrate 430, e.g. a PCB (printed circuit board), for example, comprising integrated circuitry, e.g. as shown ASICs 440a, 440c ("Carrier/ASIC to PCB attach").
  • a substrate 430 e.g. a PCB (printed circuit board)
  • integrated circuitry e.g. as shown ASICs 440a, 440c ("Carrier/ASIC to PCB attach"
  • the integrated circuitry may, for example, be attached to the substrate 430 after attaching the carrier structure 420 or vice versa.
  • interconnections 450 e.g. electrical contacts, e.g. as explained in the context of Fig. 2 .
  • the interconnections 450 may, for example, be configured to connect the MEMS dies 410, 410a, 410b, 410c to conductor tracks (not shown) of the substrate 430, that may, for example, be electrically coupled with integrated circuitry, e.g. with ASICs 440a, 440b.
  • Fig. 5 shows a schematic three-dimensional view of an example for a MEMS device according to the manufacturing steps shown in Fig. 4 .
  • MEMS device 500 comprises a lid 460.
  • device 500 may comprise a plurality of MEMS dies and consequently the steps shown in Fig. 4 may allow an out of plane integration of 4+ (4 and more) MEMS chips (e.g. MEMS dies).
  • MEMS dies can be attached to a carrier structure, e.g. carrier, to form a front volume, e.g. inner volume 421, acoustically isolated from a back volume, e.g. a volume arranged between the lid 460 and the substrate 430.
  • devices with high or higher SNR may be provided, keeping a low or for example the same footprint and single sound port, e.g. as a single MEMS single sound port device.
  • Fig. 6 shows a schematic view of a carrier structure design variant according to embodiments of the disclosure, e.g. a carrier design (main variant).
  • Fig. 6 may show a main technical implementation for the carrier structure.
  • Fig. 6 shows a schematic side view 610 of a carrier structure.
  • the carrier structure may, for example, be a cubic carrier structure, e.g. with an edge length of, e.g. about, 1.8 mm (e.g. with a tolerance of +/-5% or with a tolerance of +/-20%, e.g.
  • Openings in the side face regions of the carrier structure may, for example, be circular openings, e.g. comprising a diameter of, e.g. about, 1.3 mm (e.g. with a tolerance of +/-5% or with a tolerance of +/-20%, e.g.
  • the openings may, for example be offset from an outer edge of the carrier structure by, e.g. about, 0.25 mm (e.g.
  • the openings may, for example, be centered in a respective side face region. However it is to be noted that in general, openings in side face regions do not necessarily have to be centered.
  • Schematic side view 620 shows a cross section through plane A-A of side view 610, highlighting an offset of the opening from an outer edge.
  • Schematic three-dimensional views 630 and 640 show a carrier structure according to views 610 and 620 from different perspectives.
  • Figs. 7 may show a main technical implementation according to embodiments of the disclosure, e.g. for a 90 degree wire bonding.
  • a wire may be bonded to a MEMS die (or respectively a substrate) of a MEMS device.
  • the MEMS device (or the bond wire) may be turned, e.g. 90 degree, and bonded to a substrate (or respectively MEMS die) of the MEMS device.
  • An example for a result of such a bonding process is shown in Fig. 7.
  • FIG. 7 shows a schematic view of a carrier structure 1220 having a MEMS die 1210, comprising a die pad, mounted to one of its side face regions, wherein an interconnection 1240 is bonded from the die pad to a substrate 1230, e.g. in the form of a PCB, e.g. to a PCB pad of the substrate.
  • a MEMS die may comprise a die pad and the substrate may comprise one or more pads as well.
  • interconnections between a MEMS die and the substrate may be provided via interconnections in between respective bond pads of the MEMS die and a respective pad of the substrate.
  • the carrier structure may, for example, be a bi-material carrier (e.g. isolating body and conductive interconnects (paths and pad) on it).
  • a bi-material carrier e.g. isolating body and conductive interconnects (paths and pad) on it).
  • Figs. 8 to 9 may show alternative technical implementations according to embodiments of the disclosure.
  • Fig. 8 shows a MEMS device with an additional MEMS die or integrated circuitry on a top side face region 427 of the carrier structure of the MEMS device, according to embodiments of the disclosure.
  • MEMS device 1300 comprises, in contrast to MEMS device 500, as explained in the context of Fig. 5 , an additional MEMS die or integrated circuitry (element 1310) a top side face region of the carrier structure 420.
  • the top side face region may, for example as shown in Fig. 8 , be a side face region of the plurality of angularly offset side face regions that may be parallel to a second side face region configured for a coupling of the carrier structure 420 to the substrate 430.
  • embodiments comprise an ASIC/MEMS on the top edge of the carrier structure.
  • device 1300 may comprise interconnections that may be configured to electrically couple element 1310, e.g. in the form of integrated circuitry, to any or all of the MEMS dies 410, 410a, 410b, 410c.
  • element 1310 is an ASIC
  • additional ASICs on the substrate 430 e.g. for a provision or analysis of signals from the MEMS dies 410, 410a, 410b, 410c may not be present.
  • a carrier structure may comprise a hexagonal base area.
  • a carrier structure may comprise a plurality of angularly offset side face regions with respective openings.
  • 6 or more MEMS dies may, for example be mounted to the plurality of side face regions.
  • Additional MEMS dies may, for example be mounted to a top side face region, e.g. to one of the two side face regions substantially perpendicular to the side face regions.
  • embodiments may comprise a 6+ MEMS carrier, with a hexagon arrangement.
  • Such a carrier structure may be attached to a substrate using one of the two side face regions substantially perpendicular to the side face regions.
  • Fig. 9 shows an example of a carrier structure in the form of a pyramid arrangement according to embodiments of the disclosure. As shown in Fig. 9 , adjacent angularly offset side face regions of a carrier structure 1520 may not necessarily be perpendicular to each other. As explained before, a MEMS die 1510 may be mounted to the carrier structure 1520.
  • Fig. 10a shows schematic views of a MEMS device with a first pyramidal carrier structure according to embodiments of the disclosure.
  • Fig. 10a d) shows a schematic three-dimensional view of MEMS device 1000.
  • Fig. 10a a) shows a schematic side view (e.g. in a x-z plane) of MEMS device 1000 comprising a pyramidal carrier structure 1010.
  • the MEMS device 1000 may comprise a plurality of MEMS dies 1020a-d that are mounted to respective side face regions 1010a-d of the carrier structure 1010.
  • the side face regions 1010a-d of carrier structure 1010 may be tilted with respect to a bottom side face region (e.g. second side face region) 1060 that may be configured to be coupled to a substrate.
  • a bottom side face region e.g. second side face region
  • the pyramidal carrier structure 1010 may be flattened or leveled, such that additional circuitry may, for example, be mounted to a top (e.g. flattened top of the pyramidal structure) side face region 1030.
  • side face region 1030 may as well comprise a further MEMS die and for example an opening.
  • Fig. 10a c) shows a schematic bottom view (e.g. in a x-y plane from a negative z-direction) of MEMS device 1000.
  • the bottom side face region 1060 may comprise an opening 1040 to an inner volume of the carrier structure 1010.
  • the opening 1040 may, for example, be aligned with a sound port of a substrate, when the carrier structure 1010 is bonded to the substrate, hence allowing an interaction of the inner volume of the carrier structure and a surrounding of the MEMS device 1000. Additionally, through opening 1040, openings 1050a-d in the side face regions are shown. As shown in Fig. 10a , the MEMS dies 1020a-d may span respective openings 1050a-d in the carrier structure 1010. Therefore, MEMS dies 1020a-d may interact with a surrounding of the MEMS device, e.g. via the openings 1050a-d, the opening 1040, and for example an opening, e.g. a sound port, in a respective substrate, the carrier structure may be attached to.
  • Fig. 10b shows schematic views of the pyramidal carrier structure according to Fig. 10a .
  • Fig. 10b shows respective views (a) schematic side view, b) schematic top view, c) schematic bottom view) of the carrier structure 1010 of MEMS device 1000 according to Fig. 10a .
  • the carrier structure 1010 may, for example, be a monolithic carrier structure, e.g. manufactured from one piece.
  • Fig. 11a shows schematic views of a MEMS device with a second pyramidal carrier structure according to embodiments of the disclosure.
  • MEMS device 1001 may comprise a carrier structure 1011.
  • Carrier structure 1011 may comprise the features explained in the context of Fig. 10a , but may comprise a different inner structure, compared to carrier structure 1010 as shown in Fig. 10a .
  • Fig. 11b shows schematic views of the pyramidal carrier structure according to Fig. 11a .
  • the carrier structure may comprise holes (e.g. forming the openings), that may, for example, be perpendicular to a surface of a respective side face region (e.g. hole associated with opening 1020a and side face region 1010a).
  • the holes may hence provide the opening 1040 to the inner volume and a respective structure 1041 of the surface of the carrier structure 1010 neighboring the inner volume.
  • carrier structure 1011 shown in Fig. 11a may be manufactured differently.
  • a hole may be drilled or etched from a bottom surface region 1060 yielding inner structure 1042, e.g.
  • a result 1042 of a drilling from the "bottom" e.g. from side face region 1060 in contrast to a result 1041 of trajectories from multiple drilling from the side face regions 1010a-d.
  • a hole from the "bottom” may be deep enough to leave the round mark 1042.
  • the examples shown in Figs. 10a and 10b may result from only drilling through side face regions 1010a-d, or from first drilling from a bottom side face region 1060, but not deep enough to leave a mark 1042 and subsequent drilling from the side face regions 1010a-d.
  • the inner structure of the carrier structure may comprise any form suitable.
  • the inner structure may, for example, comprise a structure or form depending on a corresponding manufacturing method, used for providing the carrier structure.
  • embodiments according to the disclosure are not limited to a specific manufacturing method or for example, order of manufacturing steps.
  • an injection molded carrier structure may comprise a smooth inner surface without the structure shown in Figs. 10a or 11a or respectively as shown in Figs 10b or 11b .
  • Fig. 12 shows an example for a three-dimensional rendering of the MEMS device shown in Fig. 10a or Fig. 11a and Figs. 13a and 13b show examples for three-dimensional renderings of the carrier structures shown in Fig. 10b and Fig. 11b respectively.
  • a pyramidal arrangement e.g. as shown in Figs. 10 to 13 may allow to achieve a reduced height (e.g. z-dimension), for example, with a similar SNR or sensitivity, compared to a cubic arrangement.
  • Fig. 14 shows schematic views of a carrier structure with a hexagonal base area according to embodiments of the disclosure.
  • Fig. 14 d) shows a schematic three-dimensional view of carrier structure 1410.
  • Figs. 14 a), b) and c) show schematic bottom (e.g. in a x-y plane from a negative z direction), side (e.g. in a x-z plane) and top views (e.g. in a x-y plane from a positive z direction) of carrier structure 1410 having a plurality of angularly offset side face regions 1411, 1412, 1413, 1414, 1415, 1416 with respective openings 1411a, 1412a, 1413a, (1414a, 1415a, not shown) 1416a.
  • the carrier structure 1410 may comprise a top side face region 1420, e.g. a side face region substantially perpendicular to the side face regions 1411, 1412, 1413, 1414, 1415, 1416.
  • side face region 1420 may comprise integrated circuitry and/or another opening, e.g. to be spanned by a MEMS die.
  • a bottom side face region 1430 e.g. a second side face region may comprise an opening 1440 to an inner volume of the carrier structure 1410.
  • side face region 1430 may be configured to be coupled with a substrate, e.g. a substrate with a sound port, wherein the sound port may be aligned with the opening 1440.
  • Fig. 15 shows an example for a three-dimensional rendering of the carrier structure shown in Fig. 14 .
  • Fig. 16 shows schematic views of a MEMS device with a rectangular base area according to embodiments of the disclosure.
  • Carrier structure 1610 comprises a plurality of angularly offset side face regions 1611, (1612, 1613, not shown) 1614 providing an inner volume, wherein the side face regions have respective openings 1611a, 1611b, 1612a, 1613a, 1613b, 1614a.
  • side face regions 1611 and 1613 comprise two openings each.
  • two MEMS dies may be mounted or attached to each of the side face regions 1611 and 1613, each spanning a respective opening.
  • one side face region may comprise a plurality of openings and a plurality of MEMS dies spanning the openings.
  • Carrier structure 1610 further comprises a bottom side face region 1630 with an opening 1640.
  • Carrier structure 1610 may be configured to carry up to 6 MEMS dies and a corresponding ASIC, e.g. on side face region 1620.
  • Fig. 17 shows an example for a three-dimensional rendering of the carrier structure shown in Fig. 16 .
  • embodiments according to the disclosure comprise MEMS devices, e.g. microphones comprising or containing multiple MEMS dies in one package placed not planar relative to the substrate but out of its plane and acoustically sealed.
  • embodiments may be based on the principle to place MEMS dies not planar relative to a substrate surface but out of the substrate plane, e.g. out of a x-y plane, and for example to acoustically seal a package comprising the microphone comprising the MEMS dies.
  • embodiments according to the disclosure may provide high performance MEMS microphones, e.g. microphones for a high performance segment of a MEMS microphone market.
  • device and/or system characteristics e.g. characteristics of a package comprising a MEMS device according to embodiments
  • This may allow new use-cases.
  • embodiments of the disclosure may comprise packaged MEMS devices, e.g. a package comprising any of the MEMS devices as discussed herein.
  • Embodiments according to the disclosure may comprise microscopic elements, e.g. small elements.
  • embodiments according to the disclosure may achieve or even surpass performances of MEMS devices having or using multiple MEMS dies arranged on one substrate in a planar way, for example while providing a smaller footprint (e.g. with respect to a substrate surface).
  • embodiments relate to an arrangement of at least one MEMS die "out of plane” (or on a plane that would not be parallel to the plane of the package substrate) by means of the carrier structure.
  • further MEMS dies and/or ASIC dies may also be provided on any of the remaining faces of the carrier structure (e.g. except the face used to attach the carrier structure to the package substrate).
  • Embodiments according to the disclosure comprise a MEMS device, the MEMS device comprising a MEMS die, and a carrier structure having an inner volume, wherein the carrier structure comprises a plurality of angularly offset side face regions for providing the inner volume.
  • the MEMS die is mounted to a first side face region of the plurality of angularly offset side face regions and the MEMS die spans an opening in the first side face region.
  • a second side face region of the plurality of angularly offset side face regions, different from the first side face region forms a basis portion for mechanically coupling the carrier structure to a substrate.
  • the second side face region and the first side face region are non-parallel to each other.
  • the carrier structure comprises an opening to the inner volume of the carrier structure.
  • normal vectors of adjacent side face regions of the plurality of angularly offset side face regions are non-parallel.
  • the MEMS device comprises a further MEMS die; and the further MEMS die is mounted to the first side face region and the further MEMS die spans the opening or a further opening in the first side face region.
  • the MEMS device comprises an additional MEMS die, and the additional MEMS die is mounted to a third side face region of the plurality of angularly offset side face regions, and the additional MEMS die spans an opening in the third side face region.
  • the MEMS device further comprises an integrated circuitry, wherein the integrated circuitry is mounted to a side face region of the plurality of angularly offset side face regions.
  • the integrated circuitry is electrically coupled to the MEMS die, and the integrated circuitry is configured to process at least one signal provided by the MEMS die and/or the integrated circuitry is configured to provide a stimulus signal to the MEMS die.
  • the carrier structure is a monolithic carrier structure and/or the carrier structure is made from a one-piece structure and/or the carrier structure is an injection molded carrier structure and/or the carrier structure is an additively manufactured carrier structure (e.g. a 3-D printed carrier structure).
  • the MEMS device is a MEMS microphone and the inner volume of the carrier structure forms a front volume of the MEMS microphone. (e.g. providing or for a bottom-port configuration)
  • the MEMS device is a MEMS microphone and the inner volume of the carrier structure forms a back volume of the MEMS microphone. (e.g. providing or for a top-port configuration)
  • the MEMS device comprises a plurality of MEMS dies, wherein each MEMS die is mounted to a different side face region of the plurality of angularly offset side face regions.
  • the side face regions, to which the plurality of MEMS dies are mounted to are substantially perpendicular to the second side face region.
  • At least one of the MEMS dies comprises a sound transducer, an inertial sensor, a pressure sensor and/or a gas sensor.
  • the MEMS die comprises a piezoelectric MEMS sound transducer and/or a capacitive MEMS sound transducer.
  • the MEMS device further comprises a substrate, wherein the carrier structure is mechanically coupled to the substrate via the second side face region.
  • the MEMS device further comprises a lid, wherein the lid is mechanically coupled to the substrate, forming an acoustically sealed back volume or forming a front volume.
  • the substrate or the lid comprises a sound port.
  • control circuitry can be implemented in hardware or in software or at least partially in hardware or at least partially in software.
  • control circuitry can be implemented as a computer program product with a program code, the program code being operative for performing one of the methods when the computer program product runs on a computer.
  • the program code may for example be stored on a machine readable carrier.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Micromachines (AREA)
EP22157894.1A 2022-02-22 2022-02-22 Dispositif mems ayant une structure de support comprenant une pluralité de régions de faces latérales décalées angulairement Pending EP4231661A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP22157894.1A EP4231661A1 (fr) 2022-02-22 2022-02-22 Dispositif mems ayant une structure de support comprenant une pluralité de régions de faces latérales décalées angulairement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP22157894.1A EP4231661A1 (fr) 2022-02-22 2022-02-22 Dispositif mems ayant une structure de support comprenant une pluralité de régions de faces latérales décalées angulairement

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101296530A (zh) * 2007-04-29 2008-10-29 歌尔声学股份有限公司 硅电容传声器
US20130032905A1 (en) * 2010-04-30 2013-02-07 Ubotic Intellectual Property Co. Ltd. Semiconductor package configured to electrically couple to a printed circuit board and method of providing same
US20160088389A1 (en) * 2013-01-22 2016-03-24 Invensense, Inc. Microphone System with Non-Orthogonally Mounted Microphone Die
US20180005969A1 (en) * 2016-06-30 2018-01-04 Akustica, Inc. Side Ported MEMS Sensor Device Package and Method of Manufacturing Thereof
US20190233278A1 (en) * 2016-10-05 2019-08-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Pressure sensor, in particular a microphone with improved layout

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101296530A (zh) * 2007-04-29 2008-10-29 歌尔声学股份有限公司 硅电容传声器
US20130032905A1 (en) * 2010-04-30 2013-02-07 Ubotic Intellectual Property Co. Ltd. Semiconductor package configured to electrically couple to a printed circuit board and method of providing same
US20160088389A1 (en) * 2013-01-22 2016-03-24 Invensense, Inc. Microphone System with Non-Orthogonally Mounted Microphone Die
US20180005969A1 (en) * 2016-06-30 2018-01-04 Akustica, Inc. Side Ported MEMS Sensor Device Package and Method of Manufacturing Thereof
US20190233278A1 (en) * 2016-10-05 2019-08-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Pressure sensor, in particular a microphone with improved layout

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