EP4241350A4 - Dispositif laser et son procédé de fabrication - Google Patents

Dispositif laser et son procédé de fabrication

Info

Publication number
EP4241350A4
EP4241350A4 EP21888158.9A EP21888158A EP4241350A4 EP 4241350 A4 EP4241350 A4 EP 4241350A4 EP 21888158 A EP21888158 A EP 21888158A EP 4241350 A4 EP4241350 A4 EP 4241350A4
Authority
EP
European Patent Office
Prior art keywords
laser device
manufacturing same
manufacturing
same
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21888158.9A
Other languages
German (de)
English (en)
Other versions
EP4241350A1 (fr
Inventor
Yu-Chen Chen
Chien-Hung Lin
Bo-Tsun Chou
Chih-Yuan Weng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Phosertek Corp
Original Assignee
Phosertek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/241,584 external-priority patent/US12068575B2/en
Application filed by Phosertek Corp filed Critical Phosertek Corp
Publication of EP4241350A1 publication Critical patent/EP4241350A1/fr
Publication of EP4241350A4 publication Critical patent/EP4241350A4/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
EP21888158.9A 2020-11-08 2021-06-18 Dispositif laser et son procédé de fabrication Pending EP4241350A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063111065P 2020-11-08 2020-11-08
US17/241,584 US12068575B2 (en) 2020-04-29 2021-04-27 Laser device and method of manufacturing the same
PCT/CN2021/100962 WO2022095455A1 (fr) 2020-11-08 2021-06-18 Dispositif laser et son procédé de fabrication

Publications (2)

Publication Number Publication Date
EP4241350A1 EP4241350A1 (fr) 2023-09-13
EP4241350A4 true EP4241350A4 (fr) 2025-05-21

Family

ID=81457482

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21888158.9A Pending EP4241350A4 (fr) 2020-11-08 2021-06-18 Dispositif laser et son procédé de fabrication

Country Status (3)

Country Link
EP (1) EP4241350A4 (fr)
TW (2) TWI830021B (fr)
WO (1) WO2022095455A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI830021B (zh) * 2020-11-08 2024-01-21 富昱晶雷射科技股份有限公司 光子晶體面射型雷射
CN115579734B (zh) * 2022-10-14 2024-07-02 江苏华兴激光科技有限公司 一种红光激光芯片的制作方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020173089A1 (en) * 2001-03-26 2002-11-21 Gazillion Bits, Inc. Vertical cavity surface emitting laser with buried dielectric distributed bragg reflector
JP2006128548A (ja) * 2004-11-01 2006-05-18 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法、光モジュール、並びに、光伝達装置
US20080240193A1 (en) * 2007-03-26 2008-10-02 Kyoto University Two-dimensional photonic crystal surface-emitting laser
US20100103972A1 (en) * 2007-03-23 2010-04-29 Sumitomo Electric Industries, Ltd. Photonic crystal laser and method of manufacturing photonic crystal laser
CN103107482A (zh) * 2013-01-29 2013-05-15 中国科学院半导体研究所 单模光子晶体垂直腔面发射激光器及其制备方法
US20170070026A1 (en) * 2015-09-08 2017-03-09 Fuji Xerox Co., Ltd. Method of manufacturing optical semiconductor element
US10340659B1 (en) * 2018-06-14 2019-07-02 Conary Enterprise Co., Ltd. Electronically pumped surface-emitting photonic crystal laser
US20200303896A1 (en) * 2019-03-18 2020-09-24 Ricoh Company, Ltd. Optical device, lighting apparatus, measuring apparatus, part-inspecting apparatus, robot, electronic device, and movable object

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11637409B2 (en) * 2017-03-27 2023-04-25 Hamamatsu Photonics K.K. Semiconductor light-emitting module and control method therefor
JP6951890B2 (ja) * 2017-07-10 2021-10-20 浜松ホトニクス株式会社 半導体レーザ素子
TWI698057B (zh) * 2018-02-13 2020-07-01 國立交通大學 具有透明導電層之二維光子晶體面射型雷射
TWM569067U (zh) * 2018-05-21 2018-10-21 智林企業股份有限公司 Electrically excited photonic crystal surface-emitting laser element
CN110535033B (zh) * 2018-05-24 2021-05-25 智林企业股份有限公司 电激发光子晶体面射型雷射元件
TWM588387U (zh) * 2019-07-02 2019-12-21 智林企業股份有限公司 具有檢光結構之電激發光子晶體面射型雷射元件
TWI830021B (zh) * 2020-11-08 2024-01-21 富昱晶雷射科技股份有限公司 光子晶體面射型雷射

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020173089A1 (en) * 2001-03-26 2002-11-21 Gazillion Bits, Inc. Vertical cavity surface emitting laser with buried dielectric distributed bragg reflector
JP2006128548A (ja) * 2004-11-01 2006-05-18 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法、光モジュール、並びに、光伝達装置
US20100103972A1 (en) * 2007-03-23 2010-04-29 Sumitomo Electric Industries, Ltd. Photonic crystal laser and method of manufacturing photonic crystal laser
US20080240193A1 (en) * 2007-03-26 2008-10-02 Kyoto University Two-dimensional photonic crystal surface-emitting laser
CN103107482A (zh) * 2013-01-29 2013-05-15 中国科学院半导体研究所 单模光子晶体垂直腔面发射激光器及其制备方法
US20170070026A1 (en) * 2015-09-08 2017-03-09 Fuji Xerox Co., Ltd. Method of manufacturing optical semiconductor element
US10340659B1 (en) * 2018-06-14 2019-07-02 Conary Enterprise Co., Ltd. Electronically pumped surface-emitting photonic crystal laser
US20200303896A1 (en) * 2019-03-18 2020-09-24 Ricoh Company, Ltd. Optical device, lighting apparatus, measuring apparatus, part-inspecting apparatus, robot, electronic device, and movable object

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KRISHNAMOORTHY A V ET AL: "VERTICAL-CAVITY SURFACE-EMITTING LASERS FLIP-CHIP BONDED TO GIGABIT-PER-SECOND CMOS CIRCUITS", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE, USA, vol. 11, no. 1, 1 January 1999 (1999-01-01), pages 128 - 130, XP000801407, ISSN: 1041-1135, DOI: 10.1109/68.736418 *
See also references of WO2022095455A1 *

Also Published As

Publication number Publication date
EP4241350A1 (fr) 2023-09-13
TW202220316A (zh) 2022-05-16
WO2022095455A1 (fr) 2022-05-12
TWM627153U (zh) 2022-05-21
TWI830021B (zh) 2024-01-21

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