EP4257734A4 - Procédé de tirage de cristal pour silicium monocristallin - Google Patents

Procédé de tirage de cristal pour silicium monocristallin Download PDF

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Publication number
EP4257734A4
EP4257734A4 EP22736564.0A EP22736564A EP4257734A4 EP 4257734 A4 EP4257734 A4 EP 4257734A4 EP 22736564 A EP22736564 A EP 22736564A EP 4257734 A4 EP4257734 A4 EP 4257734A4
Authority
EP
European Patent Office
Prior art keywords
crystal
pulling process
crystal silicon
silicon
crystal pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22736564.0A
Other languages
German (de)
English (en)
Other versions
EP4257734A1 (fr
Inventor
Hao Deng
Zhiyan XIE
Qian Jin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Longi Green Energy Technology Co Ltd
Original Assignee
Longi Green Energy Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Longi Green Energy Technology Co Ltd filed Critical Longi Green Energy Technology Co Ltd
Publication of EP4257734A1 publication Critical patent/EP4257734A1/fr
Publication of EP4257734A4 publication Critical patent/EP4257734A4/fr
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
EP22736564.0A 2021-01-08 2022-01-06 Procédé de tirage de cristal pour silicium monocristallin Pending EP4257734A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN202110024166.7A CN112981520A (zh) 2021-01-08 2021-01-08 一种单晶硅拉晶工艺方法
CN202110984273.4A CN113652737B (zh) 2021-01-08 2021-08-25 一种单晶硅拉晶工艺方法
PCT/CN2022/070545 WO2022148402A1 (fr) 2021-01-08 2022-01-06 Procédé de tirage de cristal pour silicium monocristallin

Publications (2)

Publication Number Publication Date
EP4257734A1 EP4257734A1 (fr) 2023-10-11
EP4257734A4 true EP4257734A4 (fr) 2024-12-04

Family

ID=76345311

Family Applications (1)

Application Number Title Priority Date Filing Date
EP22736564.0A Pending EP4257734A4 (fr) 2021-01-08 2022-01-06 Procédé de tirage de cristal pour silicium monocristallin

Country Status (6)

Country Link
US (1) US20240084478A1 (fr)
EP (1) EP4257734A4 (fr)
CN (3) CN112981520A (fr)
AU (1) AU2022205729B2 (fr)
MY (1) MY210159A (fr)
WO (1) WO2022148402A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112981520A (zh) * 2021-01-08 2021-06-18 隆基绿能科技股份有限公司 一种单晶硅拉晶工艺方法
CN114318508B (zh) * 2021-12-23 2023-10-24 山东有研半导体材料有限公司 一种重掺磷超低阻硅单晶的制备方法
CN114540950B (zh) * 2022-01-10 2023-04-28 浙江大学 一种降低炉压生长n型直拉单晶硅的方法
CN115182042B (zh) * 2022-07-22 2024-05-28 包头美科硅能源有限公司 一种用于增加拉棒长度的大尺寸掺镓单晶生产方法
CN115323488A (zh) * 2022-08-16 2022-11-11 三一集团有限公司 直拉单晶硅的工艺方法及生产系统
CN115506018B (zh) * 2022-09-28 2024-09-24 晶澳（邢台）太阳能有限公司 一种rcz法拉制单晶硅的方法
CN115404541B (zh) 2022-10-18 2023-08-25 四川晶科能源有限公司 一种拉晶方法
CN115874270B (zh) * 2022-12-06 2025-09-09 隆基绿能科技股份有限公司 一种晶体生长方法及晶体硅
WO2024120168A1 (fr) * 2022-12-06 2024-06-13 隆基绿能科技股份有限公司 Procédé de croissance de cristaux, système de vide de four a monocristaux et dispositif de croissance de czochralski
CN115976628B (zh) * 2022-12-06 2026-01-02 隆基绿能科技股份有限公司 一种晶体生长方法及晶体硅
CN118272910B (zh) * 2024-05-31 2024-09-20 天合光能股份有限公司 单晶硅棒及其制备方法和硅片、太阳能电池、光伏组件
CN120119322B (zh) * 2025-04-25 2026-03-20 宇泽新能源(昆明)有限公司 单晶硅棒及其拉制方法
CN121610888B (zh) * 2026-02-03 2026-04-21 宁夏中欣晶圆半导体科技有限公司 改善111晶向器件面内vf值均匀性的拉晶方法

Citations (2)

* Cited by examiner, † Cited by third party
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JP2002154896A (ja) * 2000-11-13 2002-05-28 Shin Etsu Handotai Co Ltd Ｇａドープシリコン単結晶の製造方法
US20090072202A1 (en) * 2007-07-15 2009-03-19 Bing Yan Ren Device and process for growing ga-doped single silicon crystals suitable for making solar cells

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CN1333115C (zh) * 2004-05-11 2007-08-22 上海卡姆丹克半导体有限公司 一种拉制硅单晶工艺方法
JP5118386B2 (ja) * 2007-05-10 2013-01-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶の製造方法
CN201321509Y (zh) * 2008-12-03 2009-10-07 河北晶龙阳光设备有限公司 一种带定值气压释放安全阀的晶体生长炉
JP5595318B2 (ja) * 2011-03-29 2014-09-24 グローバルウェーハズ・ジャパン株式会社 単結晶引上装置及び単結晶引き上げ方法
CN102162124B (zh) * 2011-04-06 2012-08-22 天津市环欧半导体材料技术有限公司 一种提高重掺砷单晶轴向电阻率均匀性的方法
CN102560626A (zh) * 2012-03-10 2012-07-11 天津市环欧半导体材料技术有限公司 一种提高直拉重掺硅单晶径向电阻率均匀性的方法
JP6015634B2 (ja) * 2013-11-22 2016-10-26 信越半導体株式会社 シリコン単結晶の製造方法
CN104357901A (zh) * 2014-10-30 2015-02-18 内蒙古中环光伏材料有限公司 一种降低直拉单晶氧施主的方法
CN104831346A (zh) * 2015-06-04 2015-08-12 天津市环欧半导体材料技术有限公司 一种生产直拉重掺极低电阻率硅单晶的方法
DE112018001044T5 (de) * 2017-02-28 2019-11-28 Sumco Corporation Verfahren zum Herstellen von Silizium-Einkristallbarren, und Silizium-Einkristall-Barren
CN211420365U (zh) * 2020-02-24 2020-09-04 衢州晶哲电子材料有限公司 一种全自动晶体生长炉
CN111424313A (zh) * 2020-04-23 2020-07-17 包头美科硅能源有限公司 一种rcz法拉制掺镓单晶硅的方法
CN112981520A (zh) * 2021-01-08 2021-06-18 隆基绿能科技股份有限公司 一种单晶硅拉晶工艺方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002154896A (ja) * 2000-11-13 2002-05-28 Shin Etsu Handotai Co Ltd Ｇａドープシリコン単結晶の製造方法
US20090072202A1 (en) * 2007-07-15 2009-03-19 Bing Yan Ren Device and process for growing ga-doped single silicon crystals suitable for making solar cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2022148402A1 *

Also Published As

Publication number Publication date
WO2022148402A1 (fr) 2022-07-14
US20240084478A1 (en) 2024-03-14
CN113652737B (zh) 2023-01-13
AU2022205729A9 (en) 2024-09-19
CN112981520A (zh) 2021-06-18
AU2022205729A1 (en) 2023-07-20
MY210159A (en) 2025-08-30
CN115976639A (zh) 2023-04-18
AU2022205729B2 (en) 2025-05-08
CN113652737A (zh) 2021-11-16
CN115976639B (zh) 2025-06-27
EP4257734A1 (fr) 2023-10-11

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