EP4283802A3 - Laserdiode mit verbesserten elektrischen leiteigenschaften - Google Patents

Laserdiode mit verbesserten elektrischen leiteigenschaften Download PDF

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Publication number
EP4283802A3
EP4283802A3 EP23203171.6A EP23203171A EP4283802A3 EP 4283802 A3 EP4283802 A3 EP 4283802A3 EP 23203171 A EP23203171 A EP 23203171A EP 4283802 A3 EP4283802 A3 EP 4283802A3
Authority
EP
European Patent Office
Prior art keywords
section
active layer
laser diode
electrical conduction
conduction properties
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP23203171.6A
Other languages
English (en)
French (fr)
Other versions
EP4283802A2 (de
EP4283802B1 (de
Inventor
Jörg Fricke
Jonathan Decker
Paul Crump
Götz ERBERT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferdinand-Braun-Institut
Original Assignee
Ferdinand-Braun-Institut
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Application filed by Ferdinand-Braun-Institut filed Critical Ferdinand-Braun-Institut
Publication of EP4283802A2 publication Critical patent/EP4283802A2/de
Publication of EP4283802A3 publication Critical patent/EP4283802A3/de
Application granted granted Critical
Publication of EP4283802B1 publication Critical patent/EP4283802B1/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Die Erfindung betrifft eine Laserdiode mit verbesserten elektrischen Leiteigenschaften sowie einen entsprechenden Diodenlaser.Es ist Aufgabe der vorliegenden Erfindung eine Laserdiode mit verbessertem Aufbau zu schaffen, die bei gemeinsamer Ansteuerung unterschiedlicher Bereiche verbesserte Strahlqualität und Leistungseigenschaften aufweist.Die Laserdiode (10) weist dabei zumindest eine aktive Schicht (12), die innerhalb eines Resonators (14) angeordnet und mit einem Auskoppelelement (16) wirkverbunden ist, zumindest eine Kontaktschicht (18) zum Einkoppeln von Ladungsträgern in die aktive Schicht (12), wobei der Resonator (14) mindestens eine erste Sektion (20) und eine zweite Sektion (22) aufweist, wobei sich die maximale Breite (W1) der aktiven Schicht (12) in der ersten Sektion (20) von der maximalen Breite (W2) der aktiven Schicht (12) in der zweiten Sektion (22) unterscheidet, und eine Projektion der Kontaktschicht (18) entlang einer ersten sich senkrecht zur aktiven Schicht (12) erstreckenden ersten Achse (Z1) sowohl mit der ersten Sektion (20) als auch mit der zweiten Sektion (22) überlappt.Erfindungsgemäß ist insbesondere vorgesehen, dass die zweite Sektion (22) eine Vielzahl mittels Implantation eingebrachter separater Widerstandselemente (24) aufweist, wobei die ersten Sektion (20) und die zweiten Sektion (22) eine gemeinsame elektrische Kontaktierung aufweisen und über die Widerstandselemente (24) das Verhältnis zwischen dem Stromanteil in der ersten Sektion (20) und dem Stromanteil in der zweiten Sektion (22) eingestellt ist.
EP23203171.6A 2015-02-20 2016-02-18 Laserdiode mit verbesserten elektrischen leiteigenschaften Active EP4283802B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015203113.6A DE102015203113B4 (de) 2015-02-20 2015-02-20 Laserdiode mit verbesserten elektrischen Leiteigenschaften
EP16704864.4A EP3259811B1 (de) 2015-02-20 2016-02-18 Laserdiode mit verbesserten elektrischen leiteigenschaften
PCT/EP2016/053442 WO2016131910A1 (de) 2015-02-20 2016-02-18 Laserdiode mit verbesserten elektrischen leiteigenschaften

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
EP16704864.4A Division EP3259811B1 (de) 2015-02-20 2016-02-18 Laserdiode mit verbesserten elektrischen leiteigenschaften
EP16704864.4A Division-Into EP3259811B1 (de) 2015-02-20 2016-02-18 Laserdiode mit verbesserten elektrischen leiteigenschaften

Publications (3)

Publication Number Publication Date
EP4283802A2 EP4283802A2 (de) 2023-11-29
EP4283802A3 true EP4283802A3 (de) 2024-03-13
EP4283802B1 EP4283802B1 (de) 2024-12-18

Family

ID=55361513

Family Applications (2)

Application Number Title Priority Date Filing Date
EP16704864.4A Active EP3259811B1 (de) 2015-02-20 2016-02-18 Laserdiode mit verbesserten elektrischen leiteigenschaften
EP23203171.6A Active EP4283802B1 (de) 2015-02-20 2016-02-18 Laserdiode mit verbesserten elektrischen leiteigenschaften

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP16704864.4A Active EP3259811B1 (de) 2015-02-20 2016-02-18 Laserdiode mit verbesserten elektrischen leiteigenschaften

Country Status (5)

Country Link
US (1) US10498105B2 (de)
EP (2) EP3259811B1 (de)
JP (1) JP6842422B2 (de)
DE (1) DE102015203113B4 (de)
WO (1) WO2016131910A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108429122B (zh) * 2017-02-15 2020-10-27 中国科学院物理研究所 一种锥形激光器的锁定方法
DE102019102499A1 (de) * 2019-01-31 2020-08-06 Forschungsverbund Berlin E.V. Vorrichtung zur Erzeugung von Laserstrahlung
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region
WO2022261511A1 (en) 2021-06-10 2022-12-15 Freedom Photonics Llc Designs for lateral current control in optical amplifiers and lasers
DE102023102047B4 (de) * 2023-01-27 2024-12-12 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Halbleiterlaserbarren mit verbesserter Strahlqualität

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5392308A (en) * 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
US5793521A (en) * 1992-09-21 1998-08-11 Sdl Inc. Differentially patterned pumped optical semiconductor gain media
US6014396A (en) * 1997-09-05 2000-01-11 Sdl, Inc. Flared semiconductor optoelectronic device
US6148013A (en) * 1996-05-20 2000-11-14 Sdl, Inc. Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam
DE102008014092A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539571A (en) * 1992-09-21 1996-07-23 Sdl, Inc. Differentially pumped optical amplifer and mopa device
IES990510A2 (en) 1998-06-18 2001-01-10 Univ Cork A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device
US6898227B2 (en) * 2001-12-14 2005-05-24 Adc Telecommunications, Inc. Semiconductor laser with a tapered ridge
DE602004024451D1 (de) * 2003-12-22 2010-01-14 Panasonic Corp Halbleiterlaser-bauelement und laserprojektor
DE102008014093B4 (de) 2007-12-27 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit zumindest einer Strombarriere
JP5697907B2 (ja) * 2010-06-25 2015-04-08 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
JP5138023B2 (ja) * 2010-12-08 2013-02-06 ソニー株式会社 半導体レーザ素子
DE112012004235B4 (de) * 2011-10-11 2017-04-13 Nlight, Inc. Hochleistungshalbleiterlaser mit phasenangepasstem optischen Element
WO2013171950A1 (ja) * 2012-05-16 2013-11-21 パナソニック株式会社 半導体発光素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5793521A (en) * 1992-09-21 1998-08-11 Sdl Inc. Differentially patterned pumped optical semiconductor gain media
US5392308A (en) * 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
US6148013A (en) * 1996-05-20 2000-11-14 Sdl, Inc. Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam
US6014396A (en) * 1997-09-05 2000-01-11 Sdl, Inc. Flared semiconductor optoelectronic device
DE102008014092A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen

Also Published As

Publication number Publication date
EP3259811B1 (de) 2025-09-17
US10498105B2 (en) 2019-12-03
EP4283802A2 (de) 2023-11-29
DE102015203113B4 (de) 2023-12-28
EP3259811A1 (de) 2017-12-27
EP4283802B1 (de) 2024-12-18
US20180019571A1 (en) 2018-01-18
JP6842422B2 (ja) 2021-03-17
JP2018506189A (ja) 2018-03-01
DE102015203113A1 (de) 2016-08-25
WO2016131910A1 (de) 2016-08-25

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