EP4352819A1 - Module de formation de faisceaux compact pour systèmes d'antenne réseau à commande de phase - Google Patents

Module de formation de faisceaux compact pour systèmes d'antenne réseau à commande de phase

Info

Publication number
EP4352819A1
EP4352819A1 EP22820697.5A EP22820697A EP4352819A1 EP 4352819 A1 EP4352819 A1 EP 4352819A1 EP 22820697 A EP22820697 A EP 22820697A EP 4352819 A1 EP4352819 A1 EP 4352819A1
Authority
EP
European Patent Office
Prior art keywords
thin film
beamforming module
lines
substrate
module according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22820697.5A
Other languages
German (de)
English (en)
Other versions
EP4352819A4 (fr
Inventor
Çagatay Ertürk GÜNGÖR
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spra Savunma Havacilik Ve Uzay Teknolojileri Elektronik Yazilim Makina Sanyi Ve Ticaret Ltd Sirketi
Original Assignee
Spra Savunma Havacilik Ve Uzay Teknolojileri Elektronik Yazilim Makina Sanyi Ve Ticaret Ltd Sirketi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spra Savunma Havacilik Ve Uzay Teknolojileri Elektronik Yazilim Makina Sanyi Ve Ticaret Ltd Sirketi filed Critical Spra Savunma Havacilik Ve Uzay Teknolojileri Elektronik Yazilim Makina Sanyi Ve Ticaret Ltd Sirketi
Priority claimed from PCT/TR2022/050545 external-priority patent/WO2022260637A1/fr
Publication of EP4352819A1 publication Critical patent/EP4352819A1/fr
Publication of EP4352819A4 publication Critical patent/EP4352819A4/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/184—Strip line phase-shifters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/181—Phase-shifters using ferroelectric devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
    • H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
    • H01Q3/36—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
    • H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
    • H01Q3/40—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with phasing matrix

Definitions

  • the present invention relates to a beamforming module for smart antenna systems.
  • the invention relates to a compact beamforming module for use in phased array antennas.
  • Beamforming structures are widely used in satellite, aircraft, electronic warfare, radar communications, and navigation applications and enable beam steering via the application of phase delays at the antenna array elements.
  • beamsteering or beamforming is achieved electronically instead of mechanically by using a number of antenna elements in order to control the direction of signal transmission or reception.
  • Electronic control with faster scan rates, structural dimensions, high switching speed, prevention of transmission loss and incoming interference or noise, costs, and need for mechanical maintenance are important factors to be taken into consideration for antenna systems.
  • switched-beam antennas are constructed only by an antenna array, a beamforming network, RF switch, and simple controller element.
  • the beamforming network as one of the most important parts thereof can be classified into digital beamforming and RF beamforming, while RF beamforming is usually involved in lens-based and circuit-based multi-beam networks.
  • the semiconductor phase shifters one of the essential elements of RF beamforming, are reciprocal in nature, and may be classified as digital or analog, depending on whether the control element is used as an electronic switch or a continuously variable reactance.
  • Examples of devices that can act as electronic switches are the P-l-N diode, GaAs FET, and Schottky diodes.
  • the voltage-controlled varactor diode is used most commonly. Consequently, system preferences change according to goals, needs, feasibility and expectations.
  • Patent no. US6611230B2 discloses a phased array antenna with a phase-shifting device connected to a plurality of antenna elements and including a substrate, and a plurality of phase shifters on the substrate.
  • Each phase shifter comprises a ferromagnetic material or a ferroelectric material such as barium strontium titanate, where the phase shift is achieved by changing the dielectric constant of the material with the voltage applied to the selected thin or thick film material.
  • ferroelectric materials such as use as a substrate, frequency selective surface or signal transmission medium, or making deposition or coating the entire antenna or the substrate with the said material.
  • phase shifter The performance of a phase shifter is negatively affected by the existing transmission losses. Higher transmission loss in a serial switching circuit which should be used in conventional digital phase shifters where fixed phase shift values are selected by switching, is still among one of the pending problems needed to be solved.
  • Phased array antennas are complex embodiments, which rely on many factors such as frequency range, bandwidth, polarization, and effective radiated power (EIRP). Therefore, the selection of materials, fabrication and manufacturing process of such an antenna may be restricted by design characterizations of phase shifters, switches, and/or transmission lines based on certain materials and methods. As in some embodiments aimed for metamaterial antennas or certain thin-film substrates, the most suitable parameters for the signal distribution network may not always be suitable for the signal transmission network.
  • phase-shift circuits and related components such as diodes and switches in downsizing by design as much as possible, and to comply with the rules of distance between patches, together with the market standards of the components thereof, as the restricting factors.
  • the area where the components can be placed decreases when the Ku and Ka band frequencies are aimed to be reached by the said antennas. Therefore, it is desired that said components such as the varactor diode and switch can be incorporated on the same substrate in the structure of a beamforming module. Consequently, there exists a need today for reducing or even removing the restrictive conditions as much as possible for the said antenna design preferences, while achieving the aforesaid performance factors.
  • the main purpose of the present invention is to provide a beamforming module with less loss- higher energy efficiency, and higher power handling - higher power output, compared to conventional applications in phased array antenna systems.
  • Another important aim of the invention is to provide a beamforming module with high quality (Q) values for the construction of switches and transmission lines without any restrictive conditions for material structure or design and manufacturing method in view of phased array antenna design preferences.
  • Another object of the invention is to provide a compact-size and cost-effective antenna beamforming module for achieving higher physical size savings.
  • Yet another object of the invention is to provide a synergistic switching approach between passive circuits with different degrees of phase shift within the antenna beamforming modules.
  • a compact beamforming module for phased array antennas comprising at least one phase shifter with coupled lines arranged on a substrate and constructed on a defected ground structure, and RF switches.
  • a varactor is connected to each diagonally opposite end of the coupled lines of said phase shifter comprising coupled two transmission lines.
  • said varactor structure is transferred to the thin film in order to further reduce the design size. Odd/even mode impedances are adjusted appropriately thanks to the said defected ground structure and the coupled lines arranged thereon.
  • the defected ground structure has the effect of increasing the even-mode impedance. Optimization is achieved by adjusting the characteristic impedance and length of the transmission lines connected to the coupled lines. Optionally, a capacitor with the effect of reducing the odd-mode impedance can be added between the coupled lines.
  • Said varactor consists of a thin film component grown on the surface.
  • the thin film acts as a dielectric between the metal electrodes coated on the surface, and provides capacitance.
  • the voltage-dependent capacitance is obtained by means of the dielectric constant of the ferroelectric material, which varies with voltage.
  • the features preferred for the varactor selection are appropriate maximum/minimum capacitance ratio achievable depending on the applied voltage, low process sensitivity, and low nonlinearity as well as operability thereof at low voltages.
  • the varactor preferably comprises a thin film component, preferably a ferroelectric material, in particular, Barium Strontium Titanate (BST) or Zinc Oxide (ZnO), grown on a sapphire or alumina ceramic.
  • BST Barium Strontium Titanate
  • ZnO Zinc Oxide
  • the desired phase shift according to the invention is provided by the coupled lines on the defected ground structure on any hard substrate of high dielectric constant, such as aluminum, sapphire, GaAs, GaN, CMOS, and SiC, without any limitation for the said substrate material, number or layer structures.
  • any hard substrate of high dielectric constant such as aluminum, sapphire, GaAs, GaN, CMOS, and SiC, without any limitation for the said substrate material, number or layer structures.
  • the beamforming module of the present invention has RF switches (switching circuits), each of which preferably comprises a vanadium dioxide (VO 2 ) component grown on sapphire, Si or AI 2 O 3 surface.
  • the switching function is carried out by using the thermochromic feature of the VO 2 thin- film circuit to transfer the RF signal to the desired line, while the other lines are terminated with high impedance.
  • both reflective and absorptive switches can be used.
  • Each switching circuit is connected to more than one, preferably two, VO 2 thin-film lines connected to the common line.
  • the VO 2 thin film has a high resistance insulator characteristic under a certain transition temperature, and a low resistance conductor characteristic above said temperature.
  • the thin film temperature is increased by passing a current through the control lines connected to the switching circuits, thereby controlling the characteristic of the thin film.
  • the present invention also provides a manufacturing method for a compact beamforming module for phased array antennas comprising at least one phase shifter and RF switches arranged in at least one layer on at least one substrate.
  • Conductive elements known well from the prior art are provided to define signal and transmission paths/lines on said substrate and said conductive elements are positioned on signal paths/lines.
  • the method basically comprises the following steps;
  • phase shifter comprises coupled lines formed from two coupled transmission lines
  • said varactor comprises a ferroelectric material
  • said RF switch comprises a thin film layer of vanadium dioxide
  • the beamforming module As all the basic components used in the construction of the beamforming module, in particular the component, connection, and material structures of the RF switch/switching circuit and the ferroelectric varactor, have been explained so far, they will not be repeated again.
  • the compact beamforming module it is preferred to use a thin film process on said substrate, known well from the prior art.
  • the compact beamforming module of the invention can be combined directly on GaAs, GaN, FET, or MMIC type ICs since it can operate independently of the substrate type.
  • four separate connections to four corners can be provided to the beamforming module as a surface-mount component, such as those in the beamforming integrated circuits.
  • the power combiner/splitter lines connecting said four branches can also be fabricated on said component as a thin film circuit.
  • additional switches can be employed to these four terminals for providing a choice of polarization, or a branch line coupler, for instance, may be included with this switch.
  • the main circuit is formed on alumina in the beamforming module, and the varactor and switches can be configured on the sapphire as flip-chip surface mounts, together with said thin-film components.
  • Figures la-b are illustrative top views of a single-channel and a four-channel compact beamforming module, respectively, according to the invention, showing the main components on a single substrate.
  • Figures 2a-b are illustrative perspective views of a preferred phase shift circuit from the top and bottom, the later view of which has the varactor component made of surface-mounted flip-chip technology as an alternative embodiment to the built-in varactor component of Figure 2a.
  • Figures 3a-c are illustrative front-center vertical section views and top views of reflective and absorptive components, respectively, of a preferred RF switching circuit according to the invention.
  • Figures 4a-4c are graphs indicating return loss, insertion loss, and phase shift performance of an exemplary phase shift circuit, according to the invention, with respect to frequency and voltage changes, respectively.
  • a compact beamforming module (10) for phased array antennas according to the invention as illustrated in Figures la and Figure lb, comprises RF switches (12) and at least one phase shifter (20) comprising coupled lines (28) connected to a varactor (30), and constructed on a thin film structure arranged on the defected ground structure (26, 27). Owing to said embodiment, a synergistic switching approach between passive circuits is maintained and higher Q values and higher power handling can be achieved at low costs.
  • the coupled lines (28) are conventionally formed by properly coupling two transmission lines (17), taking into consideration odd-mode and even-mode impedance and frequency values.
  • varactor (30) refers to a semiconductor diode acting as a voltage-dependent capacitor and may also be referred to as a varicap diode, tuning diode, or voltage variable capacitor diode.
  • defected ground structure (DGS) 26, 27, 18
  • DGS defected ground structure
  • RF is meant for radio frequency and microwave.
  • said phase shifter (20) essentially consists of coupled lines (28) with varactors (30) formed on the primary defected ground structure (26).
  • Secondary defected ground structures (27) can also be formed in another embodiment, if required further.
  • the coupled two lines (28) is shown here in a reciprocal (inverse symmetrical) arrangement, each of which has equivalent components (30, 34) constructed on the single substrate (22), with defected ground structures (26, 27), the first of which (26) is formed like a longitudinal rectangle shape extending vertically whereas the second pair (27) arranged in U-like forms with their ends facing each other and mutually surrounding the first one.
  • Said varactor (30) preferably has a thin film component grown on the surface and this component is preferably selected from ferroelectric material, where Barium Strontium Titanate (BST) is preferred.
  • BST Barium Strontium Titanate
  • the required variable capacitance can be provided on the same substrate (22) on which the coupled lines (28) are formed, wherein certain maximum/minimum capacitance ratio is 1.4 to 3.0, for instance.
  • certain advantages such as low voltage operation and low nonlinearity are also obtained.
  • the need for an additional discrete diode on a different process such as a hyper-abrupt varactor epitaxially grown on GaAs, and extra pads and wire ties to connect with this diode, can be eliminated.
  • the odd-even mode impedances are adjusted appropriately by means of said defected ground structures (26, 27) and the coupled lines (28) constructed thereon.
  • the defected ground structures (26, 27) increase the even-mode impedance. Optimization is achieved by adjusting the characteristic impedance and length of the transmission lines (17) connected to the coupled lines (28).
  • a capacitor (32) having an odd-mode impedance reducing effect can be added between the coupled lines (28).
  • an inductor (34) can be added between the two varactors, if needed.
  • the width of the void provided on the ground layer that forms the defected ground structure (26), and the width and distance between the lines (28) are both calculated according to the dielectric constant and height of the substrate (22).
  • the length of the coupled lines (28) is determined according to the operating frequency band, and the dielectric constant and height of the substrate material (22).
  • conductive screw holes (36) are drilled to ensure the connection of the said varactors (30) to the ground surface on the underside of the substrate (22).
  • conductive connectors (37) on the varactor (30) component which are formed on the substrate (38) with surface-mounted flip-chip technology are soldered to another board or substrate.
  • a similar approach can also be applied for RF switching circuits (12) according to the invention.
  • Figure 3a illustrates a front vertical section view of an RF switch (12) as an exemplary embodiment according to the invention.
  • Figure 3b and Figure 3c illustrate top views of an RF switching circuit (12) with a reflective component (12a) and an absorptive component (12b) in the form of a single- pole omnidirectional (SPDT) switch.
  • Said RF switches (12) contain a thin film vanadium dioxide (VO2) component grown on the surface.
  • VO2 thin film vanadium dioxide
  • the switching function is carried out by using the thermochromic property of the VO2 thin film layer (14) (metal-to-insulator transition), transmitting the RF signal to the desired line (19) whereas the other lines are terminated by high impedance.
  • Each switching circuit (12) is connected to at least two VO2 thin film lines (14) connected to the common transmission line (17).
  • the VO2 thin film has a high-resistance insulator characteristic under a certain transition temperature and a low-resistance conductor characteristic above said temperature.
  • the temperature of the thin film is increased by passing a current through the conductive control lines (16) connected to the switching circuits, whereas the film is cooled down when no current flows therethrough, so that the characteristic of the thin film can be controlled.
  • the need for an additional switch circuit constructed with a discrete switch integrate or discrete diodes is eliminated, owing to the switching made of the VO2 thin film grown on the same substrate.
  • the beamforming module (10) of the invention further comprises a coupling capacitor (44), preferably a DC coupling MIM capacitor, which is connected to each pair of VO2 thin film lines (14) via the transmission line (17).
  • a coupling capacitor (44) preferably a DC coupling MIM capacitor, which is connected to each pair of VO2 thin film lines (14) via the transmission line (17).
  • multi-channel beamforming modules also include power dividers/collectors (40) and a printed resistor (42) for each resistive power divider/collector (40) (Figs la-lb).
  • each beamforming module 10 placed in a phased array 8x8 antenna and configured on the printed circuit board.
  • all polarization options vertical, horizontal, circular, etc. can be supported.
  • hyper-abrupt GaAs varactor diodes (two for each 0402 package) of Macom company were connected to one end of each coupled lines on the printed circuit board, and a voltage was applied therethrough in the range of 0-19 V.
  • the return loss, insertion loss, and phase shift performance obtained according to frequency and voltage changes, are shown respectively in the graphs of Figure 4a-4c.
  • phase shifter configuration of the invention is demonstrated by the higher performance outcome than the digital phase shifter integrated circuits in which the fixed phase shift values are selected by switching.
  • the performance measure here is obviously the ratio of the phase shift in degrees to the transmission loss in dB. The reason for this achievement is that there remains no need for use of serial switches employed conventionally in said circuits, and consequently, the transmission loss associated therewith is eliminated.
  • the S parameters of the phase shifter are reported in the range of 7.25-8.40 GFIz so as to cover the entire frequency band of X-band SATCOM transmitter (7.90-8.40 GFIz) and receiver (7.25-7.75 GFIz).
  • the return loss is below -10 dB
  • the 360-degree full phase range can be obtained with transmission loss values of less than 3 dB, or even about 2 dB, so the resultant FoM (figure of merit) value of approximately "360°/2 dB" is found to be unique.
  • the said outcome demonstrates a much superior performance compared to the loss values of more than 6 DB in close prior art applications, such as CMOS, SOI, GaN, etc.
  • the phase shifter is based on variable capacitance, unlike phase shifters that use the variable properties of ferroelectric materials.
  • the coupled lines have a high-quality factor and the applied voltage provides a phase shift by changing the capacitance of the varactors only connected to this line. In this respect, high performance is obtained.
  • the process variation is not high since the effect of the crystal structure obtained depending on the growth process parameters of the thin film varactor on the performance is restricted.
  • the switch transmission loss is lower than those of the semiconductor switches.
  • the switching speed is higher than MEMS switches. This is important for communication systems using time division multiplexing (TDMA) and time division duplexing (TDD) waveforms. Similarly, the antenna's transmission/receiving mode transitions are required to be fast in radar and electronic warfare systems.
  • TDMA time division multiplexing
  • TDD time division duplexing
  • the quality (Q) factor representing the ratio of the energy preserved in the system to the lost energy
  • Q quality (Q) factor representing the ratio of the energy preserved in the system to the lost energy
  • a higher Q value is a desired feature for low-loss transmission lines and filters.
  • Said thin- film circuits are constructed on substrates of very low dielectric loss constant via high-precision laser processing. In this way, advantages such as low-frequency error of the bands passed/printed through the filters and sensitivity for suppression values are achieved.
  • antenna design can be made on any substrate, via fabrication of any layered structure.
  • the thin-film design can be used as an insulated unit that provides input/output as a module, there is no limitation for a choice of method or material that would require growing the said film thereon. Accordingly, the embodiment of the invention can also fulfill the function of an integrated circuit that can be used in a target circuit by being mounted to the surface thereof.
  • the beamforming module of the invention has less loss-higher energy efficiency, and higher power handling -higher power output. Similarly, higher efficiency in the transmission state and lower noise in the receiving state can be achieved.

Landscapes

  • Variable-Direction Aerials And Aerial Arrays (AREA)

Abstract

La présente invention concerne un module de formation de faisceaux compact (10) pour des antennes réseau à commande de phase, comprenant des commutateurs RF (12) et une pluralité de déphaseurs (20), chaque déphaseur ayant au moins une structure de masse défectueuse (26/27/18), par application d'une structure de film mince sur n'importe quel type de substrat (22). Le module de formation de faisceaux de l'invention fournit des caractéristiques et des avantages synergiques uniques, comme la sélection de matériau indépendamment du type de substrat (22), la facilité d'intégration à des circuits à semi-conducteurs, la facilité d'utilisation avec des amplificateurs de puissance élevée pour fournir des antennes EIRP élevées, et des gains d'espace élevés avec une rentabilité.
EP22820697.5A 2021-06-08 2022-06-07 Module de formation de faisceaux compact pour systèmes d'antenne réseau à commande de phase Pending EP4352819A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TR202109415 2021-06-08
PCT/TR2022/050545 WO2022260637A1 (fr) 2021-06-08 2022-06-07 Module de formation de faisceaux compact pour systèmes d'antenne réseau à commande de phase

Publications (2)

Publication Number Publication Date
EP4352819A1 true EP4352819A1 (fr) 2024-04-17
EP4352819A4 EP4352819A4 (fr) 2025-04-30

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EP22820697.5A Pending EP4352819A4 (fr) 2021-06-08 2022-06-07 Module de formation de faisceaux compact pour systèmes d'antenne réseau à commande de phase

Country Status (1)

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EP (1) EP4352819A4 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1760829A1 (fr) 2005-09-02 2007-03-07 Delphi Technologies, Inc. Déphaseurs déposés en masse pour une antenne à balayage électronique
US7642881B1 (en) 2006-03-08 2010-01-05 Lockheed Martin Corporation Vanadium oxide RF/microwave integrated switch suitable for use with phased array radar antenna
CN205621827U (zh) 2016-03-29 2016-10-05 华南理工大学 一种频率和带宽均可重构的宽带平衡带通滤波器
CN105789787B (zh) 2016-03-29 2018-04-13 华南理工大学 一种频率和带宽均可重构的宽带平衡带通滤波器
US20190190147A1 (en) 2017-12-19 2019-06-20 Nokia Solutions And Networks Oy Digitally controlled phase shifter and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1760829A1 (fr) 2005-09-02 2007-03-07 Delphi Technologies, Inc. Déphaseurs déposés en masse pour une antenne à balayage électronique
US7642881B1 (en) 2006-03-08 2010-01-05 Lockheed Martin Corporation Vanadium oxide RF/microwave integrated switch suitable for use with phased array radar antenna
CN205621827U (zh) 2016-03-29 2016-10-05 华南理工大学 一种频率和带宽均可重构的宽带平衡带通滤波器
CN105789787B (zh) 2016-03-29 2018-04-13 华南理工大学 一种频率和带宽均可重构的宽带平衡带通滤波器
US20190190147A1 (en) 2017-12-19 2019-06-20 Nokia Solutions And Networks Oy Digitally controlled phase shifter and method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2022260637A1

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